GB1212735A - Growing single crystals - Google Patents
Growing single crystalsInfo
- Publication number
- GB1212735A GB1212735A GB256168A GB256168A GB1212735A GB 1212735 A GB1212735 A GB 1212735A GB 256168 A GB256168 A GB 256168A GB 256168 A GB256168 A GB 256168A GB 1212735 A GB1212735 A GB 1212735A
- Authority
- GB
- United Kingdom
- Prior art keywords
- ampoule
- pressure
- temperature
- single crystals
- telluride
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Abstract
1,212,735. Growing single crystals. PHILIPS ELECTRONIC & ASSOCIATED INDUSTRIES Ltd. 17 Jan., 1968 [17 Jan., 1967], No.2561/68. Heading ClA. [Also in Division B1] Single crystals of metal sulphide, selenide or telluride or halogeno-derivatives thereof are grown from solutions of the metal sulphide, selenide or telluride in aqueous hydrogen halide, at a temperature of from 300‹ to 500‹ C., and under a pressure of at least 1000 atmospheres. The compounds employed are substantially insoluble in 2N to 12N solutions of mineral acids at room temperature. The hydrogen halide used as solvent is preferably hydrogen chloride or hydrogen bromide. and has a concentration of from 2N to 12N. The reaction may conveniently be carried out in a quartz ampoule. The examples describe the process in which the high pressure in the ampoule is created by heating the solution after it has been sealed in the ampoule at liquid air temperature, and an external pressure applied to the ampoule, to prevent it bursting, by placing it in an autoclave and adding sufficient solid carbon dioxide so that at the temperature of the reaction the pressure of the carbon dioxide in the autoclave is greater than the pressure inside the ampoule. The following materials are referred to: CuS, Cu 1À8 S, CuSe, Cu 1À8 Se, HgS(red), Hg 3 S 2 C1 2 , SnS, Sn 2 S 3 , CdS, PbS, 5b 2 5 3 , SbSBr, together with the appropriate solvents and temperatures.
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DEN0029841 | 1967-01-17 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB1212735A true GB1212735A (en) | 1970-11-18 |
Family
ID=7345279
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB256168A Expired GB1212735A (en) | 1967-01-17 | 1968-01-17 | Growing single crystals |
Country Status (4)
| Country | Link |
|---|---|
| DE (1) | DE1619979A1 (en) |
| FR (1) | FR1555910A (en) |
| GB (1) | GB1212735A (en) |
| NL (1) | NL6800472A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100368601C (en) * | 2006-08-31 | 2008-02-13 | 山东大学 | Autoclave synthesis method of sulfur group compound |
| CN104651939A (en) * | 2015-02-15 | 2015-05-27 | 中国科学技术大学 | Method for preparing antimony sulphoioide single crystal and similar compound single crystal |
-
1967
- 1967-01-17 DE DE19671619979 patent/DE1619979A1/en active Pending
-
1968
- 1968-01-12 NL NL6800472A patent/NL6800472A/xx unknown
- 1968-01-17 GB GB256168A patent/GB1212735A/en not_active Expired
- 1968-01-17 FR FR1555910D patent/FR1555910A/fr not_active Expired
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100368601C (en) * | 2006-08-31 | 2008-02-13 | 山东大学 | Autoclave synthesis method of sulfur group compound |
| CN104651939A (en) * | 2015-02-15 | 2015-05-27 | 中国科学技术大学 | Method for preparing antimony sulphoioide single crystal and similar compound single crystal |
Also Published As
| Publication number | Publication date |
|---|---|
| FR1555910A (en) | 1969-01-31 |
| DE1619979A1 (en) | 1970-03-26 |
| NL6800472A (en) | 1968-07-18 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PS | Patent sealed | ||
| PLNP | Patent lapsed through nonpayment of renewal fees |