GB1211524A - Memory-points matrix for reading-writing device - Google Patents
Memory-points matrix for reading-writing deviceInfo
- Publication number
- GB1211524A GB1211524A GB618/69A GB61869A GB1211524A GB 1211524 A GB1211524 A GB 1211524A GB 618/69 A GB618/69 A GB 618/69A GB 61869 A GB61869 A GB 61869A GB 1211524 A GB1211524 A GB 1211524A
- Authority
- GB
- United Kingdom
- Prior art keywords
- diode
- point
- combination
- bit
- resistor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000011159 matrix material Substances 0.000 title abstract 2
- 230000001066 destructive effect Effects 0.000 abstract 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/36—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using diodes, e.g. as threshold elements, i.e. diodes assuming a stable ON-stage when driven above their threshold (S- or N-characteristic)
- G11C11/38—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using diodes, e.g. as threshold elements, i.e. diodes assuming a stable ON-stage when driven above their threshold (S- or N-characteristic) using tunnel diodes
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S257/00—Active solid-state devices, e.g. transistors, solid-state diodes
- Y10S257/926—Elongated lead extending axially through another elongated lead
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Semiconductor Memories (AREA)
- Static Random-Access Memory (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR135098 | 1968-01-05 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB1211524A true GB1211524A (en) | 1970-11-11 |
Family
ID=8644217
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB618/69A Expired GB1211524A (en) | 1968-01-05 | 1969-01-03 | Memory-points matrix for reading-writing device |
Country Status (7)
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH06112438A (ja) * | 1992-09-25 | 1994-04-22 | Fujitsu Ltd | 記憶装置、その情報読出し方法、情報書込み方法および記憶装置の製造方法 |
| US7381981B2 (en) * | 2005-07-29 | 2008-06-03 | International Business Machines Corporation | Phase-change TaN resistor based triple-state/multi-state read only memory |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3221180A (en) * | 1960-09-12 | 1965-11-30 | Rca Corp | Memory circuits employing negative resistance elements |
| US3107345A (en) * | 1960-10-05 | 1963-10-15 | Ibm | Esaki diode memory with diode coupled readout |
| US3119985A (en) * | 1961-01-03 | 1964-01-28 | Rca Corp | Tunnel diode switch circuits for memories |
| GB1001908A (en) * | 1962-08-31 | 1965-08-18 | Texas Instruments Inc | Semiconductor devices |
-
1968
- 1968-01-05 FR FR135098A patent/FR1561232A/fr not_active Expired
- 1968-12-18 BE BE725629D patent/BE725629A/xx unknown
- 1968-12-27 CH CH1929568A patent/CH501294A/fr not_active IP Right Cessation
- 1968-12-31 US US789055A patent/US3594737A/en not_active Expired - Lifetime
-
1969
- 1969-01-03 DE DE19691900267 patent/DE1900267A1/de active Pending
- 1969-01-03 GB GB618/69A patent/GB1211524A/en not_active Expired
- 1969-01-06 NL NL6900185A patent/NL6900185A/xx unknown
Also Published As
| Publication number | Publication date |
|---|---|
| US3594737A (en) | 1971-07-20 |
| FR1561232A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1969-03-28 |
| BE725629A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1969-06-18 |
| CH501294A (fr) | 1970-12-31 |
| NL6900185A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1969-07-08 |
| DE1900267A1 (de) | 1969-09-04 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PS | Patent sealed [section 19, patents act 1949] | ||
| PLNP | Patent lapsed through nonpayment of renewal fees |