GB1109068A - A method of producing silicon carbide - Google Patents

A method of producing silicon carbide

Info

Publication number
GB1109068A
GB1109068A GB48342/65A GB4834265A GB1109068A GB 1109068 A GB1109068 A GB 1109068A GB 48342/65 A GB48342/65 A GB 48342/65A GB 4834265 A GB4834265 A GB 4834265A GB 1109068 A GB1109068 A GB 1109068A
Authority
GB
United Kingdom
Prior art keywords
sic
silane
sicl2me2
mixture
silicon carbide
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB48342/65A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Dow Silicones Corp
Original Assignee
Dow Corning Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Dow Corning Corp filed Critical Dow Corning Corp
Publication of GB1109068A publication Critical patent/GB1109068A/en
Expired legal-status Critical Current

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/01Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes on temporary substrates, e.g. substrates subsequently removed by etching
    • CCHEMISTRY; METALLURGY
    • C01INORGANIC CHEMISTRY
    • C01BNON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B32/00Carbon; Compounds thereof
    • C01B32/90Carbides
    • C01B32/914Carbides of single elements
    • C01B32/956Silicon carbide
    • C01B32/963Preparation from compounds containing silicon
    • C01B32/977Preparation from organic compounds containing silicon
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Metallurgy (AREA)
  • Inorganic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Health & Medical Sciences (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Health & Medical Sciences (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Inorganic Fibers (AREA)
  • Carbon And Carbon Compounds (AREA)
GB48342/65A 1965-02-12 1965-11-15 A method of producing silicon carbide Expired GB1109068A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US43222065A 1965-02-12 1965-02-12

Publications (1)

Publication Number Publication Date
GB1109068A true GB1109068A (en) 1968-04-10

Family

ID=23715250

Family Applications (1)

Application Number Title Priority Date Filing Date
GB48342/65A Expired GB1109068A (en) 1965-02-12 1965-11-15 A method of producing silicon carbide

Country Status (3)

Country Link
CH (1) CH467725A (enrdf_load_stackoverflow)
GB (1) GB1109068A (enrdf_load_stackoverflow)
NL (1) NL6601757A (enrdf_load_stackoverflow)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN117510236A (zh) * 2023-11-29 2024-02-06 保定市北方特种气体有限公司 甲基硅烷制备碳化硅涂层的方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN117510236A (zh) * 2023-11-29 2024-02-06 保定市北方特种气体有限公司 甲基硅烷制备碳化硅涂层的方法

Also Published As

Publication number Publication date
CH467725A (de) 1969-01-31
NL6601757A (enrdf_load_stackoverflow) 1966-08-15

Similar Documents

Publication Publication Date Title
GB1213156A (en) Manufacturing filamentary silicon carbide crystals
KR940011352A (ko) 개선된 특성을 가진 화학 증기 증착- 제조된 실리콘 탄화물
Nishinaga et al. Vapor growth of boron monophosphide using open and closed tube processes
KR980700460A (ko) 실리콘 탄화물 단결정을 승화 성장시키기 위한 방법 및 장치(process and device for sublimation growing silicon carbide monocrystals)
GB1236913A (en) Manufacture of silicon carbide
GB1109068A (en) A method of producing silicon carbide
JPS5358490A (en) Forming method for film
CN103681259B (zh) 用于制造碳化硅半导体器件的方法
GB1229128A (enrdf_load_stackoverflow)
SE302914B (enrdf_load_stackoverflow)
GB1002697A (en) Improvements in or relating to the production of planar semi-conductor surfaces
WO2002057518A3 (en) Apparatus and process for the preparation of low-iron_contamination single crystal silicon
US3463666A (en) Monocrystalline beta silicon carbide on sapphire
GB1004257A (en) Improvements in or relating to processes for the preparation of semiconductor arrangements
GB1075555A (en) Process for the formation of a layer of a semiconductor material on a crystalline base
JPS57188493A (en) Manufacture of jig for pulling up silicon
GB1056720A (en) Improved method of epitaxially vapour depositing semiconductor material
US3679470A (en) Method for producing high purity monocrystalline silicon
JPS54104488A (en) Production of silicon carbide crystal layer
GB977847A (en) Method for the production of crystalline particularly monocrystalline boron
TW427951B (en) Process for production of silicon carbide form material
JPS54152465A (en) Manufacture of epitaxial wafer
JPS55148420A (en) Manufacturing of carbonized silicon crystal layer
JPS57196794A (en) Epitaxial growth method
JPS5326570A (en) Forming method of silicon (si) epitaxial layer