GB1084937A - Transistors - Google Patents

Transistors

Info

Publication number
GB1084937A
GB1084937A GB27106/66A GB2710666A GB1084937A GB 1084937 A GB1084937 A GB 1084937A GB 27106/66 A GB27106/66 A GB 27106/66A GB 2710666 A GB2710666 A GB 2710666A GB 1084937 A GB1084937 A GB 1084937A
Authority
GB
United Kingdom
Prior art keywords
type
layers
field effect
effect transistors
slice
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB27106/66A
Other languages
English (en)
Inventor
Roger Cullis
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STC PLC
Original Assignee
Standard Telephone and Cables PLC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from GB13629/65A external-priority patent/GB1045429A/en
Application filed by Standard Telephone and Cables PLC filed Critical Standard Telephone and Cables PLC
Priority to GB27106/66A priority Critical patent/GB1084937A/en
Priority to US636161A priority patent/US3518509A/en
Priority to DE1589687A priority patent/DE1589687C3/de
Priority to BE700017D priority patent/BE700017A/xx
Priority to FR110769A priority patent/FR93427E/fr
Priority to NL6708379A priority patent/NL6708379A/xx
Priority to ES341949A priority patent/ES341949A1/es
Priority to SE08667/67A priority patent/SE340319B/xx
Publication of GB1084937A publication Critical patent/GB1084937A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/63—Vertical IGFETs
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/0165—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs the components including complementary IGFETs, e.g. CMOS devices
    • H10D84/0167—Manufacturing their channels
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/0165—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs the components including complementary IGFETs, e.g. CMOS devices
    • H10D84/0195—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs the components including complementary IGFETs, e.g. CMOS devices the components including vertical IGFETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • H10D84/8311—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET] the IGFETs characterised by having different channel structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • H10D84/837—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET] comprising vertical IGFETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • H10D84/85—Complementary IGFETs, e.g. CMOS
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/0165—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs the components including complementary IGFETs, e.g. CMOS devices
    • H10D84/017—Manufacturing their source or drain regions, e.g. silicided source or drain regions

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Element Separation (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
GB27106/66A 1965-03-31 1966-06-17 Transistors Expired GB1084937A (en)

Priority Applications (8)

Application Number Priority Date Filing Date Title
GB27106/66A GB1084937A (en) 1965-03-31 1966-06-17 Transistors
US636161A US3518509A (en) 1966-06-17 1967-05-04 Complementary field-effect transistors on common substrate by multiple epitaxy techniques
DE1589687A DE1589687C3 (de) 1965-03-31 1967-06-01 Festkörperschaltung mit isolierten Feldeffekttransistoren und Verfahren zu ihrer Herstellung
BE700017D BE700017A (enrdf_load_stackoverflow) 1965-03-31 1967-06-16
FR110769A FR93427E (fr) 1965-03-31 1967-06-16 Transistors a effet de champ.
NL6708379A NL6708379A (enrdf_load_stackoverflow) 1966-06-17 1967-06-16
ES341949A ES341949A1 (es) 1966-06-17 1967-06-17 Mejoras en un transistor y en el metodo para fabricarlo.
SE08667/67A SE340319B (enrdf_load_stackoverflow) 1966-06-17 1967-06-19

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
GB13629/65A GB1045429A (en) 1965-03-31 1965-03-31 Transistors
GB27106/66A GB1084937A (en) 1965-03-31 1966-06-17 Transistors

Publications (1)

Publication Number Publication Date
GB1084937A true GB1084937A (en) 1967-09-27

Family

ID=32095213

Family Applications (1)

Application Number Title Priority Date Filing Date
GB27106/66A Expired GB1084937A (en) 1965-03-31 1966-06-17 Transistors

Country Status (4)

Country Link
BE (1) BE700017A (enrdf_load_stackoverflow)
DE (1) DE1589687C3 (enrdf_load_stackoverflow)
FR (1) FR93427E (enrdf_load_stackoverflow)
GB (1) GB1084937A (enrdf_load_stackoverflow)

Cited By (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2820331A1 (de) * 1978-05-10 1979-11-15 Ernst Prof Dr Ing Lueder Duennschicht-feldeffekt-transistoren
EP0166003A4 (en) * 1983-12-16 1987-06-29 Hitachi Ltd INTEGRATED SEMICONDUCTOR CIRCUIT.
US4713678A (en) * 1984-12-07 1987-12-15 Texas Instruments Incorporated dRAM cell and method
US4797373A (en) * 1984-10-31 1989-01-10 Texas Instruments Incorporated Method of making dRAM cell with trench capacitor
US4824793A (en) * 1984-09-27 1989-04-25 Texas Instruments Incorporated Method of making DRAM cell with trench capacitor
US4829017A (en) * 1986-09-25 1989-05-09 Texas Instruments Incorporated Method for lubricating a high capacity dram cell
US4845051A (en) * 1987-10-29 1989-07-04 Siliconix Incorporated Buried gate JFET
US4890145A (en) * 1984-08-31 1989-12-26 Texas Instruments Incorporated dRAM cell and array
US5102817A (en) * 1985-03-21 1992-04-07 Texas Instruments Incorporated Vertical DRAM cell and method
US5105245A (en) * 1988-06-28 1992-04-14 Texas Instruments Incorporated Trench capacitor DRAM cell with diffused bit lines adjacent to a trench
US5109259A (en) * 1987-09-22 1992-04-28 Texas Instruments Incorporated Multiple DRAM cells in a trench
US5208657A (en) * 1984-08-31 1993-05-04 Texas Instruments Incorporated DRAM Cell with trench capacitor and vertical channel in substrate
US5225363A (en) * 1988-06-28 1993-07-06 Texas Instruments Incorporated Trench capacitor DRAM cell and method of manufacture

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CA1049127A (en) * 1974-03-05 1979-02-20 Kunio Itoh Semiconductor devices with improved heat radiation and current concentration
JPS5811102B2 (ja) * 1975-12-09 1983-03-01 ザイダンホウジン ハンドウタイケンキユウシンコウカイ 半導体集積回路
US5140388A (en) * 1991-03-22 1992-08-18 Hewlett-Packard Company Vertical metal-oxide semiconductor devices
US5283456A (en) * 1992-06-17 1994-02-01 International Business Machines Corporation Vertical gate transistor with low temperature epitaxial channel

Cited By (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2820331A1 (de) * 1978-05-10 1979-11-15 Ernst Prof Dr Ing Lueder Duennschicht-feldeffekt-transistoren
EP0166003A4 (en) * 1983-12-16 1987-06-29 Hitachi Ltd INTEGRATED SEMICONDUCTOR CIRCUIT.
US4890145A (en) * 1984-08-31 1989-12-26 Texas Instruments Incorporated dRAM cell and array
US5208657A (en) * 1984-08-31 1993-05-04 Texas Instruments Incorporated DRAM Cell with trench capacitor and vertical channel in substrate
US4824793A (en) * 1984-09-27 1989-04-25 Texas Instruments Incorporated Method of making DRAM cell with trench capacitor
US4797373A (en) * 1984-10-31 1989-01-10 Texas Instruments Incorporated Method of making dRAM cell with trench capacitor
US4713678A (en) * 1984-12-07 1987-12-15 Texas Instruments Incorporated dRAM cell and method
US5102817A (en) * 1985-03-21 1992-04-07 Texas Instruments Incorporated Vertical DRAM cell and method
US4829017A (en) * 1986-09-25 1989-05-09 Texas Instruments Incorporated Method for lubricating a high capacity dram cell
US5109259A (en) * 1987-09-22 1992-04-28 Texas Instruments Incorporated Multiple DRAM cells in a trench
US4845051A (en) * 1987-10-29 1989-07-04 Siliconix Incorporated Buried gate JFET
US5105245A (en) * 1988-06-28 1992-04-14 Texas Instruments Incorporated Trench capacitor DRAM cell with diffused bit lines adjacent to a trench
US5225363A (en) * 1988-06-28 1993-07-06 Texas Instruments Incorporated Trench capacitor DRAM cell and method of manufacture

Also Published As

Publication number Publication date
DE1589687B2 (de) 1974-05-16
DE1589687C3 (de) 1974-12-19
FR93427E (fr) 1969-03-28
BE700017A (enrdf_load_stackoverflow) 1967-12-18
DE1589687A1 (de) 1970-05-27

Similar Documents

Publication Publication Date Title
GB1084937A (en) Transistors
GB959667A (en) Improvements in or relating to methods of manufacturing unitary solid state electronic circuit complexes and to said complexes
GB1153428A (en) Improvements in Semiconductor Devices.
GB1197403A (en) Improvements relating to Semiconductor Devices
GB1080177A (en) Improved method of manufacturing planar transistors
US3840888A (en) Complementary mosfet device structure
GB1339250A (en) Gate protective device for insulated gate field-effect transistors
GB1041681A (en) Switching transistor structure and method of making same
GB1229776A (enrdf_load_stackoverflow)
GB1176263A (en) Complementary Mis-Type Transistors and Method of making same
GB1016095A (en) Semiconductor switching device
GB1003131A (en) Semiconductor devices and their fabrication
GB1069755A (en) Improvements in or relating to semiconductor devices
GB1225504A (enrdf_load_stackoverflow)
GB1298059A (en) Improvements in semiconductor devices
GB949646A (en) Improvements in or relating to semiconductor devices
ES404807A1 (es) Procedimiento epitaxil para la produccion de circuitos in- tegrados lineales de potencia.
GB1050417A (enrdf_load_stackoverflow)
GB1073135A (en) Semiconductor current limiter
GB1103184A (en) Improvements relating to semiconductor circuits
US3619740A (en) Integrated circuit having complementary field effect transistors
GB1074816A (en) Improvements relating to semi-conductor devices
GB1039915A (en) Improvements in or relating to semiconductor devices
GB1335037A (en) Field effect transistor
GB1482163A (en) Space charge limited transistor