GB1007031A - Improvements in or relating to strain gauges - Google Patents
Improvements in or relating to strain gaugesInfo
- Publication number
- GB1007031A GB1007031A GB1239462A GB1239462A GB1007031A GB 1007031 A GB1007031 A GB 1007031A GB 1239462 A GB1239462 A GB 1239462A GB 1239462 A GB1239462 A GB 1239462A GB 1007031 A GB1007031 A GB 1007031A
- Authority
- GB
- United Kingdom
- Prior art keywords
- semi
- surface layer
- conductor
- boron
- resistivity
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B7/00—Measuring arrangements characterised by the use of electric or magnetic techniques
- G01B7/16—Measuring arrangements characterised by the use of electric or magnetic techniques for measuring the deformation in a solid, e.g. by resistance strain gauge
Abstract
1,007,031. Semi-conductor devices. HONEYWELL Inc. March 30, 1962 [April 3, 1961], No. 12394/62. Drawings to Specification. Heading H1K. An element for a semi-conductor strain gauge comprises a crystal of high resistivity semi-conductor having a surface layer thereon highly doped with an N or P-type impurity substance, the surface layer thus having a comparatively low resistivity and having ohmic electrodes attached thereto at points remote from one another. Silicon, germanium, and other semi-conductors such as the intermetallic compounds may be used. Suitable doping agents include phosphorus, arsenic, antimony, aluminium, gallium, indium or boron. The surface layer may be provided by vapour diffusion techniques or, less desirably, by the direct alloying of electroplated or vacuum deposited films. The production of the particular embodiment starts with a silicon filament having a resistivity greater than 10 ohm. cm. and which is cut so as to have the (111) axis along the filament and so as to have a substantially square cross-section. After polishing the surface with a chemical etch, such as 1: 1 :1 H 2 O/HF/HNO 3 containing 1% by weight of silver nitrate, boron is diffused into the surface using known inert carrier gas techniques. To complete the element electrical contacts are made to the surface layer using an electroless nickel bath.
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US10043361A | 1961-04-03 | 1961-04-03 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB1007031A true GB1007031A (en) | 1965-10-13 |
Family
ID=22279758
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB1239462A Expired GB1007031A (en) | 1961-04-03 | 1962-03-30 | Improvements in or relating to strain gauges |
Country Status (1)
| Country | Link |
|---|---|
| GB (1) | GB1007031A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3577884A (en) * | 1968-07-31 | 1971-05-11 | Matsushita Electric Ind Co Ltd | Pressure-measuring device |
-
1962
- 1962-03-30 GB GB1239462A patent/GB1007031A/en not_active Expired
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3577884A (en) * | 1968-07-31 | 1971-05-11 | Matsushita Electric Ind Co Ltd | Pressure-measuring device |
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