GB0706710D0 - Organic transistor - Google Patents

Organic transistor

Info

Publication number
GB0706710D0
GB0706710D0 GBGB0706710.1A GB0706710A GB0706710D0 GB 0706710 D0 GB0706710 D0 GB 0706710D0 GB 0706710 A GB0706710 A GB 0706710A GB 0706710 D0 GB0706710 D0 GB 0706710D0
Authority
GB
United Kingdom
Prior art keywords
organic transistor
transistor
organic
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
GBGB0706710.1A
Other versions
GB2434033B (en
GB2434033A (en
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Cambridge Display Technology Ltd
Original Assignee
Cambridge Display Technology Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Cambridge Display Technology Ltd filed Critical Cambridge Display Technology Ltd
Publication of GB0706710D0 publication Critical patent/GB0706710D0/en
Publication of GB2434033A publication Critical patent/GB2434033A/en
Application granted granted Critical
Publication of GB2434033B publication Critical patent/GB2434033B/en
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having a potential-jump barrier or a surface barrier
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/484—Insulated gate field-effect transistors [IGFETs] characterised by the channel regions
    • H10K10/486—Insulated gate field-effect transistors [IGFETs] characterised by the channel regions the channel region comprising two or more active layers, e.g. forming pn heterojunctions
    • H01L51/0037—
    • H01L51/0512—
    • H01L51/052—
    • H01L51/10—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having a potential-jump barrier or a surface barrier
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having a potential-jump barrier or a surface barrier
    • H10K10/80—Constructional details
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having a potential-jump barrier or a surface barrier
    • H10K10/80—Constructional details
    • H10K10/82—Electrodes
    • H10K10/84—Ohmic electrodes, e.g. source or drain electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/10—Organic polymers or oligomers
    • H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
    • H10K85/113—Heteroaromatic compounds comprising sulfur or selene, e.g. polythiophene
    • H10K85/1135—Polyethylene dioxythiophene [PEDOT]; Derivatives thereof
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having a potential-jump barrier or a surface barrier
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/464—Lateral top-gate IGFETs comprising only a single gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having a potential-jump barrier or a surface barrier
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/468—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics
    • H10K10/471—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics the gate dielectric comprising only organic materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/20—Changing the shape of the active layer in the devices, e.g. patterning
    • H10K71/211—Changing the shape of the active layer in the devices, e.g. patterning by selective transformation of an existing layer
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/10—Organic polymers or oligomers
    • H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
    • H10K85/113—Heteroaromatic compounds comprising sulfur or selene, e.g. polythiophene
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/10—Organic polymers or oligomers
    • H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
    • H10K85/115—Polyfluorene; Derivatives thereof
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/10—Organic polymers or oligomers
    • H10K85/151—Copolymers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60—Organic compounds having low molecular weight
    • H10K85/631—Amine compounds having at least two aryl rest on at least one amine-nitrogen atom, e.g. triphenylamine
GB0706710A 2004-10-15 2007-04-05 Organic transistor Expired - Fee Related GB2434033B (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
GBGB0423006.6A GB0423006D0 (en) 2004-10-15 2004-10-15 Organic transistor
PCT/GB2005/003920 WO2006040548A2 (en) 2004-10-15 2005-10-12 Organic transistor

Publications (3)

Publication Number Publication Date
GB0706710D0 true GB0706710D0 (en) 2007-05-16
GB2434033A GB2434033A (en) 2007-07-11
GB2434033B GB2434033B (en) 2009-08-05

Family

ID=33462840

Family Applications (2)

Application Number Title Priority Date Filing Date
GBGB0423006.6A Ceased GB0423006D0 (en) 2004-10-15 2004-10-15 Organic transistor
GB0706710A Expired - Fee Related GB2434033B (en) 2004-10-15 2007-04-05 Organic transistor

Family Applications Before (1)

Application Number Title Priority Date Filing Date
GBGB0423006.6A Ceased GB0423006D0 (en) 2004-10-15 2004-10-15 Organic transistor

Country Status (4)

Country Link
US (1) US8232135B2 (en)
GB (2) GB0423006D0 (en)
TW (1) TWI334233B (en)
WO (1) WO2006040548A2 (en)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100647683B1 (en) * 2005-03-08 2006-11-23 삼성에스디아이 주식회사 Organic thin film transistor and flat display apparatus comprising the same
JP5176414B2 (en) * 2007-07-11 2013-04-03 株式会社リコー Organic transistor array and display device
GR20080100269A (en) * 2008-04-18 2009-11-19 ������ ������� ������� ��������� (�����) "����������" Memory devices using proton-conducting polymeric materials.
WO2012177699A1 (en) * 2011-06-20 2012-12-27 The Regents Of The University Of California Current aperture vertical electron transistors
EP2658006B1 (en) * 2012-04-27 2015-05-20 Novaled GmbH Organic field effect transistor
JP6045049B2 (en) * 2012-04-05 2016-12-14 ノヴァレッド ゲーエムベーハー Organic field effect transistor and manufacturing method thereof
US20220045274A1 (en) * 2020-08-06 2022-02-10 Facebook Technologies Llc Ofets having organic semiconductor layer with high carrier mobility and in situ isolation
CN114300616B (en) * 2022-01-05 2022-08-26 南京邮电大学 Integrated power device based on copolymer organic semiconductor
CN115172363B (en) * 2022-08-08 2023-08-08 南京邮电大学 Application of copolymer organic field effect transistor in multi-mode power integrated circuit

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2813428B2 (en) * 1989-08-17 1998-10-22 三菱電機株式会社 Field effect transistor and liquid crystal display device using the field effect transistor
US6278127B1 (en) * 1994-12-09 2001-08-21 Agere Systems Guardian Corp. Article comprising an organic thin film transistor adapted for biasing to form a N-type or a P-type transistor
EP2258804B1 (en) 1994-12-28 2012-08-22 Cambridge Display Technology Limited Polymers for use in optical devices
US6309763B1 (en) * 1997-05-21 2001-10-30 The Dow Chemical Company Fluorene-containing polymers and electroluminescent devices therefrom
NO314525B1 (en) 1999-04-22 2003-03-31 Thin Film Electronics Asa Process for the preparation of organic semiconductor devices in thin film
AU777444B2 (en) 1999-06-21 2004-10-14 Flexenable Limited Aligned polymers for an organic TFT
WO2001047043A1 (en) 1999-12-21 2001-06-28 Plastic Logic Limited Solution processed devices
AU779878B2 (en) 1999-12-21 2005-02-17 Flexenable Limited Forming interconnects
CN1245769C (en) 1999-12-21 2006-03-15 造型逻辑有限公司 Solution processing
EP1243032B1 (en) 1999-12-21 2019-11-20 Flexenable Limited Inkjet-fabricated integrated circuits
US7531377B2 (en) 2002-09-03 2009-05-12 Cambridge Display Technology Limited Optical device
JP2004103905A (en) * 2002-09-11 2004-04-02 Pioneer Electronic Corp Organic semiconductor element
JP2004260121A (en) 2003-02-28 2004-09-16 Hitachi Ltd Organic semiconductor element and method for manufacturing the same, and display unit using the same
US20070153362A1 (en) * 2004-12-27 2007-07-05 Regents Of The University Of California Fabric having nanostructured thin-film networks

Also Published As

Publication number Publication date
GB2434033B (en) 2009-08-05
TW200627683A (en) 2006-08-01
WO2006040548A2 (en) 2006-04-20
WO2006040548A3 (en) 2006-07-27
GB2434033A (en) 2007-07-11
GB0423006D0 (en) 2004-11-17
US20080164461A1 (en) 2008-07-10
TWI334233B (en) 2010-12-01
US8232135B2 (en) 2012-07-31

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Legal Events

Date Code Title Description
PCNP Patent ceased through non-payment of renewal fee

Effective date: 20191012