GB0030010D0 - Semiconductor device having a low k material within a shallow trench isolation and a method of manufacture - Google Patents

Semiconductor device having a low k material within a shallow trench isolation and a method of manufacture

Info

Publication number
GB0030010D0
GB0030010D0 GB0030010A GB0030010A GB0030010D0 GB 0030010 D0 GB0030010 D0 GB 0030010D0 GB 0030010 A GB0030010 A GB 0030010A GB 0030010 A GB0030010 A GB 0030010A GB 0030010 D0 GB0030010 D0 GB 0030010D0
Authority
GB
United Kingdom
Prior art keywords
manufacture
low
semiconductor device
trench isolation
shallow trench
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
GB0030010A
Other versions
GB2362994A (en
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nokia of America Corp
Original Assignee
Lucent Technologies Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Lucent Technologies Inc filed Critical Lucent Technologies Inc
Publication of GB0030010D0 publication Critical patent/GB0030010D0/en
Publication of GB2362994A publication Critical patent/GB2362994A/en
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/76224—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using trench refilling with dielectric materials
GB0030010A 1999-12-20 2000-12-08 Low dielectric constant trench isolation structure Withdrawn GB2362994A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US46765099A 1999-12-20 1999-12-20

Publications (2)

Publication Number Publication Date
GB0030010D0 true GB0030010D0 (en) 2001-01-24
GB2362994A GB2362994A (en) 2001-12-05

Family

ID=23856559

Family Applications (1)

Application Number Title Priority Date Filing Date
GB0030010A Withdrawn GB2362994A (en) 1999-12-20 2000-12-08 Low dielectric constant trench isolation structure

Country Status (3)

Country Link
JP (1) JP2001217307A (en)
KR (1) KR20010067447A (en)
GB (1) GB2362994A (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1435657A1 (en) * 2002-12-30 2004-07-07 STMicroelectronics S.r.l. Non-volatile memory cell and manufacturing process
US7569875B2 (en) 2006-03-14 2009-08-04 Kabushiki Kaisha Toyota Chuo Kenkyusho Semiconductor device and a method for producing the same

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5313094A (en) * 1992-01-28 1994-05-17 International Business Machines Corportion Thermal dissipation of integrated circuits using diamond paths
KR950034673A (en) * 1994-04-20 1995-12-28 윌리엄 이. 힐러 Transistor isolation method and device using low-k dielectric
US5702976A (en) * 1995-10-24 1997-12-30 Micron Technology, Inc. Shallow trench isolation using low dielectric constant insulator

Also Published As

Publication number Publication date
KR20010067447A (en) 2001-07-12
GB2362994A (en) 2001-12-05
JP2001217307A (en) 2001-08-10

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Legal Events

Date Code Title Description
WAP Application withdrawn, taken to be withdrawn or refused ** after publication under section 16(1)