FR826933A - Système d'électrodes à conductibilité dissymétrique - Google Patents

Système d'électrodes à conductibilité dissymétrique

Info

Publication number
FR826933A
FR826933A FR826933DA FR826933A FR 826933 A FR826933 A FR 826933A FR 826933D A FR826933D A FR 826933DA FR 826933 A FR826933 A FR 826933A
Authority
FR
France
Prior art keywords
electrode system
conductivity electrode
unsymmetrical
unsymmetrical conductivity
electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
Other languages
English (en)
French (fr)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Philips Gloeilampenfabrieken NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Gloeilampenfabrieken NV filed Critical Philips Gloeilampenfabrieken NV
Application granted granted Critical
Publication of FR826933A publication Critical patent/FR826933A/fr
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/06—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising selenium or tellurium in uncombined form other than as impurities in semiconductor bodies of other materials
    • H01L21/10—Preliminary treatment of the selenium or tellurium, its application to the foundation plate, or the subsequent treatment of the combination
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02425—Conductive materials, e.g. metallic silicides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02441—Group 14 semiconducting materials
    • H01L21/02444—Carbon, e.g. diamond-like carbon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/06—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising selenium or tellurium in uncombined form other than as impurities in semiconductor bodies of other materials
    • H01L21/10—Preliminary treatment of the selenium or tellurium, its application to the foundation plate, or the subsequent treatment of the combination
    • H01L21/105—Treatment of the surface of the selenium or tellurium layer after having been made conductive
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/06—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising selenium or tellurium in uncombined form other than as impurities in semiconductor bodies of other materials
    • H01L21/10—Preliminary treatment of the selenium or tellurium, its application to the foundation plate, or the subsequent treatment of the combination
    • H01L21/108—Provision of discrete insulating layers, i.e. non-genetic barrier layers

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Biotechnology (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Photoreceptors In Electrophotography (AREA)
  • Hybrid Cells (AREA)
  • Battery Electrode And Active Subsutance (AREA)
FR826933D 1936-08-13 1937-08-11 Système d'électrodes à conductibilité dissymétrique Expired FR826933A (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DEP2083D DE1079209B (de) 1936-08-13 1936-08-13 Elektrodensystem mit unsymmetrischer Leitfaehigkeit und Verfahren zu dessen Herstellung

Publications (1)

Publication Number Publication Date
FR826933A true FR826933A (fr) 1938-04-13

Family

ID=25989691

Family Applications (1)

Application Number Title Priority Date Filing Date
FR826933D Expired FR826933A (fr) 1936-08-13 1937-08-11 Système d'électrodes à conductibilité dissymétrique

Country Status (7)

Country Link
US (1) US2162613A (de)
BE (1) BE423105A (de)
CH (1) CH203236A (de)
DE (1) DE1079209B (de)
FR (1) FR826933A (de)
GB (1) GB486829A (de)
NL (2) NL83633B (de)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE742935C (de) * 1939-07-01 1943-12-15 Siemens Ag Elektrischer Halbleiter aus Selen, insbesondere fuer Trockengleichrichter
NL57010C (de) * 1941-05-01
DE961365C (de) * 1941-12-13 1957-04-04 Siemens Ag Elektrischer Halbleiter aus Selen, insbesondere fuer Trockengleichrichter
US2462157A (en) * 1943-11-10 1949-02-22 Westinghouse Electric Corp Method of eliminating porosity in crystalline selenium films
NL116213B (de) * 1944-04-06 1900-01-01
US2462949A (en) * 1944-05-24 1949-03-01 Hartford Nat Bank & Trust Co Method of treating selenium
GB600053A (en) * 1944-11-02 1948-03-30 Standard Telephones Cables Ltd Improvements in or relating to selenium rectifiers
US2446467A (en) * 1944-11-11 1948-08-03 Fansteel Metallurgical Corp Dry plate rectifier
DE946075C (de) * 1945-03-29 1956-07-26 Siemens Ag Sperrschicht-Trockengleichrichter
US2514879A (en) * 1945-07-13 1950-07-11 Purdue Research Foundation Alloys and rectifiers made thereof
DE841174C (de) * 1948-10-02 1952-06-13 Siemens Ag Halbleiteranordnung
US2872357A (en) * 1952-06-04 1959-02-03 Fansteel Metallurgical Corp Method of forming a blocking layer on a selenium rectifier
US2872358A (en) * 1952-06-04 1959-02-03 Fansteel Metallurgical Corp Method of forming a blocking layer on a selenium rectifier
DE975018C (de) * 1952-07-17 1961-07-06 Siemens Ag Verfahren zur Herstellung von Selengleichrichtern

Also Published As

Publication number Publication date
CH203236A (de) 1939-02-28
NL52391C (de) 1900-01-01
NL83633B (de) 1900-01-01
US2162613A (en) 1939-06-13
DE1079209B (de) 1960-04-07
BE423105A (de) 1900-01-01
GB486829A (en) 1938-06-10

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