FR2856194B1 - Procede perfectionne de recuit de stabilisation - Google Patents
Procede perfectionne de recuit de stabilisationInfo
- Publication number
- FR2856194B1 FR2856194B1 FR0306920A FR0306920A FR2856194B1 FR 2856194 B1 FR2856194 B1 FR 2856194B1 FR 0306920 A FR0306920 A FR 0306920A FR 0306920 A FR0306920 A FR 0306920A FR 2856194 B1 FR2856194 B1 FR 2856194B1
- Authority
- FR
- France
- Prior art keywords
- recovery method
- improved stabilization
- stabilization recovery
- improved
- stabilization
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000000034 method Methods 0.000 title 1
- 238000011084 recovery Methods 0.000 title 1
- 230000006641 stabilisation Effects 0.000 title 1
- 238000011105 stabilization Methods 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
- H01L21/2003—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy characterised by the substrate
- H01L21/2007—Bonding of semiconductor wafers to insulating substrates or to semiconducting substrates using an intermediate insulating layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
- H01L21/76251—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Element Separation (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Laminated Bodies (AREA)
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR0306920A FR2856194B1 (fr) | 2003-06-10 | 2003-06-10 | Procede perfectionne de recuit de stabilisation |
US10/863,352 US7098148B2 (en) | 2003-06-10 | 2004-06-09 | Method for heat treating a semiconductor wafer |
PCT/FR2004/001449 WO2004112124A2 (fr) | 2003-06-10 | 2004-06-10 | Procede perfectionne de recuit de stabilisation |
EP04767314A EP1639633A2 (fr) | 2003-06-10 | 2004-06-10 | Procede perfectionne de recuit de stabilisation |
JP2006516283A JP4949021B2 (ja) | 2003-06-10 | 2004-06-10 | 改良された安定化アニール方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR0306920A FR2856194B1 (fr) | 2003-06-10 | 2003-06-10 | Procede perfectionne de recuit de stabilisation |
Publications (2)
Publication Number | Publication Date |
---|---|
FR2856194A1 FR2856194A1 (fr) | 2004-12-17 |
FR2856194B1 true FR2856194B1 (fr) | 2005-08-26 |
Family
ID=33484295
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR0306920A Expired - Lifetime FR2856194B1 (fr) | 2003-06-10 | 2003-06-10 | Procede perfectionne de recuit de stabilisation |
Country Status (4)
Country | Link |
---|---|
EP (1) | EP1639633A2 (fr) |
JP (1) | JP4949021B2 (fr) |
FR (1) | FR2856194B1 (fr) |
WO (1) | WO2004112124A2 (fr) |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4437922A (en) * | 1982-03-26 | 1984-03-20 | International Business Machines Corporation | Method for tailoring oxygen precipitate particle density and distribution silicon wafers |
US4804633A (en) * | 1988-02-18 | 1989-02-14 | Northern Telecom Limited | Silicon-on-insulator substrates annealed in polysilicon tube |
JPH03166733A (ja) * | 1989-11-27 | 1991-07-18 | Olympus Optical Co Ltd | 半導体装置の製造方法 |
JP2752799B2 (ja) * | 1991-03-27 | 1998-05-18 | 三菱マテリアル株式会社 | Soi基板の製造方法 |
JPH0845946A (ja) * | 1994-08-01 | 1996-02-16 | Hitachi Ltd | シリコン半導体単結晶基板の熱処理方法及び熱処理装置、半導体装置 |
US5788763A (en) * | 1995-03-09 | 1998-08-04 | Toshiba Ceramics Co., Ltd. | Manufacturing method of a silicon wafer having a controlled BMD concentration |
FR2777115B1 (fr) * | 1998-04-07 | 2001-07-13 | Commissariat Energie Atomique | Procede de traitement de substrats semi-conducteurs et structures obtenues par ce procede |
JP3956271B2 (ja) * | 2000-10-26 | 2007-08-08 | 株式会社Sumco | シリコンウェーハの製造方法 |
JP3927778B2 (ja) * | 2001-07-09 | 2007-06-13 | 住友電気工業株式会社 | エピタキシャルウエハとその製造方法 |
-
2003
- 2003-06-10 FR FR0306920A patent/FR2856194B1/fr not_active Expired - Lifetime
-
2004
- 2004-06-10 EP EP04767314A patent/EP1639633A2/fr not_active Withdrawn
- 2004-06-10 WO PCT/FR2004/001449 patent/WO2004112124A2/fr active Application Filing
- 2004-06-10 JP JP2006516283A patent/JP4949021B2/ja not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
JP4949021B2 (ja) | 2012-06-06 |
WO2004112124A3 (fr) | 2005-05-12 |
WO2004112124A2 (fr) | 2004-12-23 |
JP2006527493A (ja) | 2006-11-30 |
EP1639633A2 (fr) | 2006-03-29 |
FR2856194A1 (fr) | 2004-12-17 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
CD | Change of name or company name |
Owner name: SOITEC, FR Effective date: 20120423 |
|
PLFP | Fee payment |
Year of fee payment: 14 |
|
PLFP | Fee payment |
Year of fee payment: 15 |
|
PLFP | Fee payment |
Year of fee payment: 16 |
|
PLFP | Fee payment |
Year of fee payment: 18 |
|
PLFP | Fee payment |
Year of fee payment: 19 |
|
PLFP | Fee payment |
Year of fee payment: 20 |