FR2776125B1 - METHOD FOR MANUFACTURING SETPOINT BREAKING LAYERS FOR DETACHING DEVELOPED LAYER SYSTEMS - Google Patents

METHOD FOR MANUFACTURING SETPOINT BREAKING LAYERS FOR DETACHING DEVELOPED LAYER SYSTEMS

Info

Publication number
FR2776125B1
FR2776125B1 FR9900813A FR9900813A FR2776125B1 FR 2776125 B1 FR2776125 B1 FR 2776125B1 FR 9900813 A FR9900813 A FR 9900813A FR 9900813 A FR9900813 A FR 9900813A FR 2776125 B1 FR2776125 B1 FR 2776125B1
Authority
FR
France
Prior art keywords
detaching
layer systems
developed layer
breaking layers
manufacturing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR9900813A
Other languages
French (fr)
Other versions
FR2776125A1 (en
Inventor
Franz Laermer
Wilhelm Frey
Hans Artmann
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Robert Bosch GmbH
Original Assignee
Robert Bosch GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Robert Bosch GmbH filed Critical Robert Bosch GmbH
Publication of FR2776125A1 publication Critical patent/FR2776125A1/en
Application granted granted Critical
Publication of FR2776125B1 publication Critical patent/FR2776125B1/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/7806—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices involving the separation of the active layers from a substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02373—Group 14 semiconducting materials
    • H01L21/02378—Silicon carbide
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02373—Group 14 semiconducting materials
    • H01L21/02381—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02441—Group 14 semiconducting materials
    • H01L21/0245—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02494—Structure
    • H01L21/02513—Microstructure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02658—Pretreatments
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
    • H01L21/76251—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques
    • H01L21/76259—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques with separation/delamination along a porous layer
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10S117/915—Separating from substrate
FR9900813A 1998-01-27 1999-01-26 METHOD FOR MANUFACTURING SETPOINT BREAKING LAYERS FOR DETACHING DEVELOPED LAYER SYSTEMS Expired - Fee Related FR2776125B1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19803013A DE19803013B4 (en) 1998-01-27 1998-01-27 A method for detaching an epitaxial layer or a layer system and subsequent application to an alternative support

Publications (2)

Publication Number Publication Date
FR2776125A1 FR2776125A1 (en) 1999-09-17
FR2776125B1 true FR2776125B1 (en) 2003-10-24

Family

ID=7855774

Family Applications (1)

Application Number Title Priority Date Filing Date
FR9900813A Expired - Fee Related FR2776125B1 (en) 1998-01-27 1999-01-26 METHOD FOR MANUFACTURING SETPOINT BREAKING LAYERS FOR DETACHING DEVELOPED LAYER SYSTEMS

Country Status (4)

Country Link
US (1) US6677249B2 (en)
JP (1) JP4351319B2 (en)
DE (1) DE19803013B4 (en)
FR (1) FR2776125B1 (en)

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DE19940512A1 (en) * 1999-08-26 2001-03-22 Bosch Gmbh Robert Method for capping a component with a cavern structure and method for producing the cavern structure
EP1132952B1 (en) * 2000-03-10 2016-11-23 Imec Method for the formation and lift-off of porous silicon layers
DE10025746A1 (en) * 2000-05-24 2001-12-06 Juergen H Werner Production of a solid body substrate used in the silicon switching circuits comprises a cylindrical solid body and cutting out substrate plates in the direction of the cylinder axis, and laterally joining several substrate plates
DE10029791C2 (en) 2000-06-16 2002-04-18 Infineon Technologies Ag Process for establishing a stable connection between two wafers
DE10032579B4 (en) * 2000-07-05 2020-07-02 Robert Bosch Gmbh Method for producing a semiconductor component and a semiconductor component produced by the method
DE10107405A1 (en) * 2001-02-14 2002-09-12 Rainer Schork Semiconductor film which can be directly processed on conveyor belt production line comprises semiconductor tape formed by ion implantation
DE10241450A1 (en) 2002-09-06 2004-03-18 Robert Bosch Gmbh Production of a deformation sensor used in common rail diesel engines and in fuel injection engines comprises applying a sacrificial layer on or in a substrate, applying an activated layer on the sacrificial layer and further processing
EP1484794A1 (en) * 2003-06-06 2004-12-08 S.O.I. Tec Silicon on Insulator Technologies S.A. A method for fabricating a carrier substrate
US7538010B2 (en) * 2003-07-24 2009-05-26 S.O.I.Tec Silicon On Insulator Technologies Method of fabricating an epitaxially grown layer
FR2857983B1 (en) * 2003-07-24 2005-09-02 Soitec Silicon On Insulator PROCESS FOR PRODUCING AN EPITAXIC LAYER
DE10350036B4 (en) * 2003-10-27 2014-01-23 Robert Bosch Gmbh Method for separating semiconductor chips and corresponding semiconductor chip arrangement
GB2436398B (en) * 2006-03-23 2011-08-24 Univ Bath Growth method using nanostructure compliant layers and HVPE for producing high quality compound semiconductor materials
GB0701069D0 (en) * 2007-01-19 2007-02-28 Univ Bath Nanostructure template and production of semiconductors using the template
US8652947B2 (en) * 2007-09-26 2014-02-18 Wang Nang Wang Non-polar III-V nitride semiconductor and growth method
US8118934B2 (en) * 2007-09-26 2012-02-21 Wang Nang Wang Non-polar III-V nitride material and production method
US8367518B2 (en) 2008-05-30 2013-02-05 Alta Devices, Inc. Epitaxial lift off stack having a multi-layered handle and methods thereof
US20090325367A1 (en) * 2008-05-30 2009-12-31 Alta Devices, Inc. Methods and apparatus for a chemical vapor deposition reactor
GB2460898B (en) 2008-06-19 2012-10-10 Wang Nang Wang Production of semiconductor material and devices using oblique angle etched templates
EP2335274A4 (en) * 2008-10-10 2012-02-29 Alta Devices Inc Mesa etch method and composition for epitaxial lift off
KR20110069852A (en) * 2008-10-10 2011-06-23 알타 디바이씨즈, 인크. Continuous feed chemical vapor deposition
KR20110099029A (en) * 2008-12-08 2011-09-05 알타 디바이씨즈, 인크. Multiple stack deposition for epitaxial lift off
CN102301456A (en) * 2008-12-17 2011-12-28 奥塔装置公司 Tape-based Epitaxial Lift Off Apparatuses And Methods
JP5607081B2 (en) 2009-02-27 2014-10-15 アルタ デバイセズ，インコーポレイテッド Tile substrates for deposition and epitaxial lift-off processes.
KR101043097B1 (en) 2009-09-09 2011-06-21 연세대학교 산학협력단 Method for manufacturing single crystalline silicon film on any substrate using light irradiation
US9834860B2 (en) * 2009-10-14 2017-12-05 Alta Devices, Inc. Method of high growth rate deposition for group III/V materials
US11393683B2 (en) 2009-10-14 2022-07-19 Utica Leaseco, Llc Methods for high growth rate deposition for forming different cells on a wafer
US8685836B2 (en) 2011-03-11 2014-04-01 Industry-Academic Corporation Foundation, Yonsei University Method for forming a silicon layer on any substrate using light irradiation
US9574135B2 (en) * 2013-08-22 2017-02-21 Nanoco Technologies Ltd. Gas phase enhancement of emission color quality in solid state LEDs
DE102019106124A1 (en) 2018-03-22 2019-09-26 Infineon Technologies Ag Forming semiconductor devices in silicon carbide

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Also Published As

Publication number Publication date
JP4351319B2 (en) 2009-10-28
JPH11265876A (en) 1999-09-28
US20010055881A1 (en) 2001-12-27
US6677249B2 (en) 2004-01-13
FR2776125A1 (en) 1999-09-17
DE19803013B4 (en) 2005-02-03
DE19803013A1 (en) 1999-08-05

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Effective date: 20150930