FR2620271B1 - SEMICONDUCTOR PROTECTION AGAINST OVERVOLTAGES - Google Patents

SEMICONDUCTOR PROTECTION AGAINST OVERVOLTAGES

Info

Publication number
FR2620271B1
FR2620271B1 FR8712444A FR8712444A FR2620271B1 FR 2620271 B1 FR2620271 B1 FR 2620271B1 FR 8712444 A FR8712444 A FR 8712444A FR 8712444 A FR8712444 A FR 8712444A FR 2620271 B1 FR2620271 B1 FR 2620271B1
Authority
FR
France
Prior art keywords
protection against
semiconductor protection
against overvoltages
overvoltages
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR8712444A
Other languages
French (fr)
Other versions
FR2620271A1 (en
Inventor
Jean-Paul Montaut
Francois Poulin
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Thomson Semiconducteurs SA
Original Assignee
Thomson Semiconducteurs SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Thomson Semiconducteurs SA filed Critical Thomson Semiconducteurs SA
Priority to FR8712444A priority Critical patent/FR2620271B1/en
Publication of FR2620271A1 publication Critical patent/FR2620271A1/en
Application granted granted Critical
Publication of FR2620271B1 publication Critical patent/FR2620271B1/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
    • H01L27/102—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration including bipolar components
    • H01L27/1021—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration including bipolar components including diodes only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861—Diodes
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02H—EMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
    • H02H9/00—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection
    • H02H9/04—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection responsive to excess voltage
    • H02H9/044—Physical layout, materials not provided for elsewhere
FR8712444A 1987-09-08 1987-09-08 SEMICONDUCTOR PROTECTION AGAINST OVERVOLTAGES Expired - Fee Related FR2620271B1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
FR8712444A FR2620271B1 (en) 1987-09-08 1987-09-08 SEMICONDUCTOR PROTECTION AGAINST OVERVOLTAGES

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR8712444A FR2620271B1 (en) 1987-09-08 1987-09-08 SEMICONDUCTOR PROTECTION AGAINST OVERVOLTAGES

Publications (2)

Publication Number Publication Date
FR2620271A1 FR2620271A1 (en) 1989-03-10
FR2620271B1 true FR2620271B1 (en) 1990-01-12

Family

ID=9354706

Family Applications (1)

Application Number Title Priority Date Filing Date
FR8712444A Expired - Fee Related FR2620271B1 (en) 1987-09-08 1987-09-08 SEMICONDUCTOR PROTECTION AGAINST OVERVOLTAGES

Country Status (1)

Country Link
FR (1) FR2620271B1 (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1990014707A1 (en) * 1989-05-26 1990-11-29 Raychem Limited Electrical device with transient protection
US6309952B1 (en) * 1998-10-06 2001-10-30 Fairchild Semiconductor Corporation Process for forming high voltage junction termination extension oxide
US20060216913A1 (en) * 2005-03-25 2006-09-28 Pu-Ju Kung Asymmetric bidirectional transient voltage suppressor and method of forming same

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2994121A (en) * 1958-11-21 1961-08-01 Shockley William Method of making a semiconductive switching array
CH595716A5 (en) * 1975-09-25 1978-02-28 Bbc Brown Boveri & Cie
FR2566582B1 (en) * 1984-06-22 1987-02-20 Silicium Semiconducteur Ssc TWO-WAY PROTECTION DEVICE TRIGGERED BY AVALANCHE
GB2184884B (en) * 1985-12-20 1988-12-21 Philips Electronic Associated Bipolar semiconductor device

Also Published As

Publication number Publication date
FR2620271A1 (en) 1989-03-10

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Legal Events

Date Code Title Description
ST Notification of lapse