FR2524200B1 - - Google Patents
Info
- Publication number
- FR2524200B1 FR2524200B1 FR8304878A FR8304878A FR2524200B1 FR 2524200 B1 FR2524200 B1 FR 2524200B1 FR 8304878 A FR8304878 A FR 8304878A FR 8304878 A FR8304878 A FR 8304878A FR 2524200 B1 FR2524200 B1 FR 2524200B1
- Authority
- FR
- France
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
- H01L21/223—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a gaseous phase
- H01L21/2236—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a gaseous phase from or into a plasma phase
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
- H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP57045617A JPS58164134A (ja) | 1982-03-24 | 1982-03-24 | 半導体装置の製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
FR2524200A1 FR2524200A1 (fr) | 1983-09-30 |
FR2524200B1 true FR2524200B1 (fr) | 1985-05-03 |
Family
ID=12724334
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR8304878A Granted FR2524200A1 (fr) | 1982-03-24 | 1983-03-24 | Procede d'implantation d'ions non soumis a une analyse de masse et dispositif a semi-conducteurs realise a l'aide de ce procede |
Country Status (4)
Country | Link |
---|---|
US (1) | US4533831A (fr) |
JP (1) | JPS58164134A (fr) |
DE (1) | DE3310545A1 (fr) |
FR (1) | FR2524200A1 (fr) |
Families Citing this family (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61237421A (ja) * | 1985-04-15 | 1986-10-22 | Hitachi Ltd | 半導体装置の製造方法 |
JP2516951B2 (ja) * | 1987-02-06 | 1996-07-24 | 松下電器産業株式会社 | 半導体装置の製造方法 |
US5311028A (en) * | 1990-08-29 | 1994-05-10 | Nissin Electric Co., Ltd. | System and method for producing oscillating magnetic fields in working gaps useful for irradiating a surface with atomic and molecular ions |
US6544825B1 (en) | 1992-12-26 | 2003-04-08 | Semiconductor Energy Laboratory Co., Ltd. | Method of fabricating a MIS transistor |
JP2659000B2 (ja) * | 1995-12-18 | 1997-09-30 | 松下電器産業株式会社 | トランジスタの製造方法 |
US5808416A (en) * | 1996-11-01 | 1998-09-15 | Implant Sciences Corp. | Ion source generator auxiliary device |
GB9726191D0 (en) * | 1997-12-11 | 1998-02-11 | Philips Electronics Nv | Ion implantation process |
JP2005064033A (ja) * | 2003-08-12 | 2005-03-10 | Fujio Masuoka | 半導体基板へのイオン注入方法 |
FR2926301A1 (fr) * | 2007-12-21 | 2009-07-17 | Commissariat Energie Atomique | Implanteur ionique avec generateur d'hydrogene |
JP5520290B2 (ja) * | 2008-06-11 | 2014-06-11 | インテバック・インコーポレイテッド | 半導体装置及び太陽電池製造方法 |
US8749053B2 (en) | 2009-06-23 | 2014-06-10 | Intevac, Inc. | Plasma grid implant system for use in solar cell fabrications |
US9437392B2 (en) | 2011-11-02 | 2016-09-06 | Varian Semiconductor Equipment Associates, Inc. | High-throughput ion implanter |
CN104428883B (zh) | 2011-11-08 | 2017-02-22 | 因特瓦克公司 | 基板处理系统和方法 |
KR101832230B1 (ko) | 2012-03-05 | 2018-04-13 | 엘지전자 주식회사 | 태양 전지 및 이의 제조 방법 |
WO2014100506A1 (fr) | 2012-12-19 | 2014-06-26 | Intevac, Inc. | Grille pour implantation ionique par plasma |
US9524849B2 (en) | 2013-07-18 | 2016-12-20 | Varian Semiconductor Equipment Associates, Inc. | Method of improving ion beam quality in an implant system |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB1280013A (en) * | 1969-09-05 | 1972-07-05 | Atomic Energy Authority Uk | Improvements in or relating to apparatus bombarding a target with ions |
US4013891A (en) * | 1975-12-15 | 1977-03-22 | Ibm Corporation | Method for varying the diameter of a beam of charged particles |
FR2383702A1 (fr) * | 1977-03-18 | 1978-10-13 | Anvar | Perfectionnements aux procedes et dispositifs de dopage de materiaux semi-conducteurs |
DE2835121A1 (de) * | 1978-08-10 | 1980-02-14 | Fraunhofer Ges Forschung | Verfahren und vorrichtung zum dotieren von halbleitern mittels ionenimplantation |
DE2835136A1 (de) * | 1978-08-10 | 1980-02-14 | Fraunhofer Ges Forschung | Solarelement sowie verfahren und vorrichtung zur herstellung desselben mittels ionenimplantation |
JPS5852297B2 (ja) * | 1979-06-04 | 1983-11-21 | 株式会社日立製作所 | マイクロ波イオン源 |
JPS5669826A (en) | 1979-11-09 | 1981-06-11 | Hitachi Ltd | Ion injector |
US4449051A (en) * | 1982-02-16 | 1984-05-15 | Varian Associates, Inc. | Dose compensation by differential pattern scanning |
US6580727B1 (en) * | 1999-08-20 | 2003-06-17 | Texas Instruments Incorporated | Element management system for a digital subscriber line access multiplexer |
-
1982
- 1982-03-24 JP JP57045617A patent/JPS58164134A/ja active Granted
-
1983
- 1983-03-21 US US06/477,375 patent/US4533831A/en not_active Expired - Lifetime
- 1983-03-23 DE DE19833310545 patent/DE3310545A1/de active Granted
- 1983-03-24 FR FR8304878A patent/FR2524200A1/fr active Granted
Also Published As
Publication number | Publication date |
---|---|
DE3310545A1 (de) | 1983-10-06 |
FR2524200A1 (fr) | 1983-09-30 |
US4533831A (en) | 1985-08-06 |
DE3310545C2 (fr) | 1987-04-30 |
JPH0349176B2 (fr) | 1991-07-26 |
JPS58164134A (ja) | 1983-09-29 |
Similar Documents
Legal Events
Date | Code | Title | Description |
---|---|---|---|
TP | Transmission of property |