FR2522442A1 - Transistor a effet de champ en ingaas - Google Patents

Transistor a effet de champ en ingaas Download PDF

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Publication number
FR2522442A1
FR2522442A1 FR8302491A FR8302491A FR2522442A1 FR 2522442 A1 FR2522442 A1 FR 2522442A1 FR 8302491 A FR8302491 A FR 8302491A FR 8302491 A FR8302491 A FR 8302491A FR 2522442 A1 FR2522442 A1 FR 2522442A1
Authority
FR
France
Prior art keywords
layer
transistor according
source
channel region
channel
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR8302491A
Other languages
English (en)
French (fr)
Other versions
FR2522442B1 (enrdf_load_stackoverflow
Inventor
Alfred Yi Cho
Paul O'connor
Thomas Perine Pearsall
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AT&T Corp
Original Assignee
Western Electric Co Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Western Electric Co Inc filed Critical Western Electric Co Inc
Publication of FR2522442A1 publication Critical patent/FR2522442A1/fr
Application granted granted Critical
Publication of FR2522442B1 publication Critical patent/FR2522442B1/fr
Granted legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/85—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs
    • H10D62/852—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs being Group III-V materials comprising three or more elements, e.g. AlGaN or InAsSbP
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
    • H10D64/68—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator
    • H10D64/693—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator the insulator comprising nitrogen, e.g. nitrides, oxynitrides or nitrogen-doped materials

Landscapes

  • Junction Field-Effect Transistors (AREA)
FR8302491A 1982-02-26 1983-02-16 Transistor a effet de champ en ingaas Granted FR2522442A1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US35251882A 1982-02-26 1982-02-26

Publications (2)

Publication Number Publication Date
FR2522442A1 true FR2522442A1 (fr) 1983-09-02
FR2522442B1 FR2522442B1 (enrdf_load_stackoverflow) 1984-12-28

Family

ID=23385455

Family Applications (1)

Application Number Title Priority Date Filing Date
FR8302491A Granted FR2522442A1 (fr) 1982-02-26 1983-02-16 Transistor a effet de champ en ingaas

Country Status (3)

Country Link
JP (1) JPS58158975A (enrdf_load_stackoverflow)
CA (1) CA1196111A (enrdf_load_stackoverflow)
FR (1) FR2522442A1 (enrdf_load_stackoverflow)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2187432B1 (en) * 2008-11-13 2013-01-09 Epcos AG P-type field-effect transistor and method of production

Non-Patent Citations (3)

* Cited by examiner, † Cited by third party
Title
IBM TECHNICAL DISCLOSURE BULLETIN, vol. 24, no. 7A, décembre 1981, New York D.J. DIMARIA "Stable GaAs MOSFET", page 3232 *
IEEE ELECTRON DEVICE LETTERS, vol. EDL-2, no. 3, mars 1981, New York H.H. WIEDER et al. "Inversion-mode insulated gate Ga0.47In0.53As field-effect transistors", pages 73-74 *
IEEE ELECTRON DEVICE LETTERS, vol. EDL-2, no. 7, juillet 1981, New York K.P. PANDE et al. "Ge3N4-InP MIS structures", pages 182-184 *

Also Published As

Publication number Publication date
JPS58158975A (ja) 1983-09-21
CA1196111A (en) 1985-10-29
FR2522442B1 (enrdf_load_stackoverflow) 1984-12-28

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