FR2501914B1 - - Google Patents
Info
- Publication number
- FR2501914B1 FR2501914B1 FR8105132A FR8105132A FR2501914B1 FR 2501914 B1 FR2501914 B1 FR 2501914B1 FR 8105132 A FR8105132 A FR 8105132A FR 8105132 A FR8105132 A FR 8105132A FR 2501914 B1 FR2501914 B1 FR 2501914B1
- Authority
- FR
- France
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
- H01L21/225—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a solid phase, e.g. a doped oxide layer
- H01L21/2251—Diffusion into or out of group IV semiconductors
- H01L21/2254—Diffusion into or out of group IV semiconductors from or through or into an applied layer, e.g. photoresist, nitrides
- H01L21/2257—Diffusion into or out of group IV semiconductors from or through or into an applied layer, e.g. photoresist, nitrides the applied layer being silicon or silicide or SIPOS, e.g. polysilicon, porous silicon
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/04—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/866—Zener diodes
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Bipolar Integrated Circuits (AREA)
- Bipolar Transistors (AREA)
- Semiconductor Integrated Circuits (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR8105132A FR2501914A1 (fr) | 1981-03-13 | 1981-03-13 | Diode zener 4 a 8 volts fonctionnant en avalanche a faible niveau de courant et procede de fabrication |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR8105132A FR2501914A1 (fr) | 1981-03-13 | 1981-03-13 | Diode zener 4 a 8 volts fonctionnant en avalanche a faible niveau de courant et procede de fabrication |
Publications (2)
Publication Number | Publication Date |
---|---|
FR2501914A1 FR2501914A1 (fr) | 1982-09-17 |
FR2501914B1 true FR2501914B1 (US07943777-20110517-C00090.png) | 1985-02-08 |
Family
ID=9256244
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR8105132A Granted FR2501914A1 (fr) | 1981-03-13 | 1981-03-13 | Diode zener 4 a 8 volts fonctionnant en avalanche a faible niveau de courant et procede de fabrication |
Country Status (1)
Country | Link |
---|---|
FR (1) | FR2501914A1 (US07943777-20110517-C00090.png) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0109888A3 (en) * | 1982-11-12 | 1987-05-20 | FAIRCHILD CAMERA & INSTRUMENT CORPORATION | Subsurface zener diode |
EP0547675B1 (en) * | 1991-12-16 | 1998-12-30 | Koninklijke Philips Electronics N.V. | Zener diode with reference diode and protective diode |
WO1998028786A2 (en) * | 1996-12-24 | 1998-07-02 | Koninklijke Philips Electronics N.V. | Method of manufacturing a glass-covered semiconductor device and a glass-covered semiconductor device |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2205746B1 (US07943777-20110517-C00090.png) * | 1972-11-07 | 1976-04-30 | Sescosem | |
DE2916114A1 (de) * | 1978-04-21 | 1979-10-31 | Hitachi Ltd | Halbleitervorrichtung |
FR2470443A1 (fr) * | 1979-11-27 | 1981-05-29 | Thomson Csf | Procede de fabrication de diodes zener et diodes obtenues |
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1981
- 1981-03-13 FR FR8105132A patent/FR2501914A1/fr active Granted
Also Published As
Publication number | Publication date |
---|---|
FR2501914A1 (fr) | 1982-09-17 |