FR2501912B1 - - Google Patents
Info
- Publication number
- FR2501912B1 FR2501912B1 FR8105130A FR8105130A FR2501912B1 FR 2501912 B1 FR2501912 B1 FR 2501912B1 FR 8105130 A FR8105130 A FR 8105130A FR 8105130 A FR8105130 A FR 8105130A FR 2501912 B1 FR2501912 B1 FR 2501912B1
- Authority
- FR
- France
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66234—Bipolar junction transistors [BJT]
- H01L29/66265—Thin film bipolar transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/1004—Base region of bipolar transistors
- H01L29/1008—Base region of bipolar transistors of lateral transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42304—Base electrodes for bipolar transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/73—Bipolar junction transistors
- H01L29/7317—Bipolar thin film transistors
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Bipolar Transistors (AREA)
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR8105130A FR2501912A1 (fr) | 1981-03-13 | 1981-03-13 | Transistor bipolaire lateral sur isolant et son procede de fabrication |
| DE8282400388T DE3264992D1 (en) | 1981-03-13 | 1982-03-05 | Lateral bipolar transistor and process for its manufacture |
| EP19820400388 EP0060761B1 (fr) | 1981-03-13 | 1982-03-05 | Transistor bipolaire latéral sur isolant et son procédé de fabrication |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR8105130A FR2501912A1 (fr) | 1981-03-13 | 1981-03-13 | Transistor bipolaire lateral sur isolant et son procede de fabrication |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| FR2501912A1 FR2501912A1 (fr) | 1982-09-17 |
| FR2501912B1 true FR2501912B1 (US06299757-20011009-C00006.png) | 1984-10-26 |
Family
ID=9256242
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| FR8105130A Granted FR2501912A1 (fr) | 1981-03-13 | 1981-03-13 | Transistor bipolaire lateral sur isolant et son procede de fabrication |
Country Status (3)
| Country | Link |
|---|---|
| EP (1) | EP0060761B1 (US06299757-20011009-C00006.png) |
| DE (1) | DE3264992D1 (US06299757-20011009-C00006.png) |
| FR (1) | FR2501912A1 (US06299757-20011009-C00006.png) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2547954B1 (fr) * | 1983-06-21 | 1985-10-25 | Efcis | Procede de fabrication de composants semi-conducteurs isoles dans une plaquette semi-conductrice |
| EP0137992A3 (en) * | 1983-09-29 | 1987-01-21 | Fujitsu Limited | Lateral bipolar transistor formed in a silicon on insulator (soi) substrate |
| JPS6081864A (ja) * | 1983-10-12 | 1985-05-09 | Fujitsu Ltd | ラテラル型トランジスタ |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3484662A (en) * | 1965-01-15 | 1969-12-16 | North American Rockwell | Thin film transistor on an insulating substrate |
| JPS4929785B1 (US06299757-20011009-C00006.png) * | 1970-10-30 | 1974-08-07 | ||
| US4016016A (en) * | 1975-05-22 | 1977-04-05 | Rca Corporation | Method of simultaneously forming a polycrystalline silicon gate and a single crystal extension of said gate in silicon on sapphire MOS devices |
| DE2529951A1 (de) * | 1975-07-04 | 1977-01-27 | Siemens Ag | Lateraler, bipolarer transistor |
| JPS53132275A (en) * | 1977-04-25 | 1978-11-17 | Nippon Telegr & Teleph Corp <Ntt> | Semiconductor device and its production |
| US4244001A (en) * | 1979-09-28 | 1981-01-06 | Rca Corporation | Fabrication of an integrated injection logic device with narrow basewidth |
| US4259680A (en) * | 1980-04-17 | 1981-03-31 | Bell Telephone Laboratories, Incorporated | High speed lateral bipolar transistor |
-
1981
- 1981-03-13 FR FR8105130A patent/FR2501912A1/fr active Granted
-
1982
- 1982-03-05 EP EP19820400388 patent/EP0060761B1/fr not_active Expired
- 1982-03-05 DE DE8282400388T patent/DE3264992D1/de not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| DE3264992D1 (en) | 1985-09-05 |
| EP0060761A1 (fr) | 1982-09-22 |
| FR2501912A1 (fr) | 1982-09-17 |
| EP0060761B1 (fr) | 1985-07-31 |
Similar Documents
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| ST | Notification of lapse |