FR2501727B1 - - Google Patents
Info
- Publication number
- FR2501727B1 FR2501727B1 FR8105107A FR8105107A FR2501727B1 FR 2501727 B1 FR2501727 B1 FR 2501727B1 FR 8105107 A FR8105107 A FR 8105107A FR 8105107 A FR8105107 A FR 8105107A FR 2501727 B1 FR2501727 B1 FR 2501727B1
- Authority
- FR
- France
- Prior art keywords
- anode
- pieces
- treated
- furnace
- cathode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C8/00—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals
- C23C8/06—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals using gases
- C23C8/36—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals using gases using ionised gases, e.g. ionitriding
Priority Applications (7)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR8105107A FR2501727A1 (fr) | 1981-03-13 | 1981-03-13 | Procede de traitements thermochimiques de metaux par bombardement ionique |
US06/355,880 US4490190A (en) | 1981-03-13 | 1982-03-08 | Process for thermochemical treatments of metals by ionic bombardment |
DE8282400407T DE3279106D1 (en) | 1981-03-13 | 1982-03-09 | Process for the thermochemical treatments of metals by ion bombardment |
EP82400407A EP0062550B1 (fr) | 1981-03-13 | 1982-03-09 | Procédé de traitements thermochimiques de métaux par bombardement ionique |
AT82400407T ATE37907T1 (de) | 1981-03-13 | 1982-03-09 | Verfahren fuer die thermochemischen behandlungen von metallen durch ionenbeschuss. |
JP57039264A JPS57210971A (en) | 1981-03-13 | 1982-03-12 | Thermochemical treatment of metal by ion bombardment |
US06/657,791 US4672170A (en) | 1981-03-13 | 1984-10-04 | Apparatus for thermochemical treatments of metals by ionic bombardment |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR8105107A FR2501727A1 (fr) | 1981-03-13 | 1981-03-13 | Procede de traitements thermochimiques de metaux par bombardement ionique |
Publications (2)
Publication Number | Publication Date |
---|---|
FR2501727A1 FR2501727A1 (fr) | 1982-09-17 |
FR2501727B1 true FR2501727B1 (fr) | 1983-06-03 |
Family
ID=9256233
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR8105107A Granted FR2501727A1 (fr) | 1981-03-13 | 1981-03-13 | Procede de traitements thermochimiques de metaux par bombardement ionique |
Country Status (6)
Country | Link |
---|---|
US (2) | US4490190A (fr) |
EP (1) | EP0062550B1 (fr) |
JP (1) | JPS57210971A (fr) |
AT (1) | ATE37907T1 (fr) |
DE (1) | DE3279106D1 (fr) |
FR (1) | FR2501727A1 (fr) |
Families Citing this family (60)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE3322341A1 (de) * | 1983-06-22 | 1985-01-03 | Siegfried Dr.-Ing. 5135 Selfkant Strämke | Verfahren und vorrichtung zur oberflaechenbehandlung von werkstuecken durch glimmentladung |
US4700315A (en) * | 1983-08-29 | 1987-10-13 | Wellman Thermal Systems Corporation | Method and apparatus for controlling the glow discharge process |
US4568396A (en) * | 1984-10-03 | 1986-02-04 | The United States Of America As Represented By The Secretary Of The Navy | Wear improvement in titanium alloys by ion implantation |
FR2587729B1 (fr) * | 1985-09-24 | 1988-12-23 | Centre Nat Rech Scient | Procede et dispositif de traitement chimique, notamment de traitement thermochimique et de depot chimique dans un plasma homogene de grand volume |
US4693760A (en) * | 1986-05-12 | 1987-09-15 | Spire Corporation | Ion implanation of titanium workpieces without surface discoloration |
CH671407A5 (fr) * | 1986-06-13 | 1989-08-31 | Balzers Hochvakuum | |
JPS6333553A (ja) * | 1986-07-24 | 1988-02-13 | Masanobu Nunogaki | プラズマ源窒化法 |
GB8625912D0 (en) * | 1986-10-29 | 1986-12-03 | Electricity Council | Thermochemical treatment |
DE3700633C2 (de) * | 1987-01-12 | 1997-02-20 | Reinar Dr Gruen | Verfahren und Vorrichtung zum schonenden Beschichten elektrisch leitender Gegenstände mittels Plasma |
US4764394A (en) * | 1987-01-20 | 1988-08-16 | Wisconsin Alumni Research Foundation | Method and apparatus for plasma source ion implantation |
US4777109A (en) * | 1987-05-11 | 1988-10-11 | Robert Gumbinner | RF plasma treated photosensitive lithographic printing plates |
US4853046A (en) * | 1987-09-04 | 1989-08-01 | Surface Combustion, Inc. | Ion carburizing |
US5127967A (en) * | 1987-09-04 | 1992-07-07 | Surface Combustion, Inc. | Ion carburizing |
US4872922A (en) * | 1988-03-11 | 1989-10-10 | Spire Corporation | Method and apparatus for the ion implantation of spherical surfaces |
US5025365A (en) * | 1988-11-14 | 1991-06-18 | Unisys Corporation | Hardware implemented cache coherency protocol with duplicated distributed directories for high-performance multiprocessors |
US5079032A (en) * | 1989-07-21 | 1992-01-07 | Spire Corporation | Ion implantation of spherical surfaces |
US4968006A (en) * | 1989-07-21 | 1990-11-06 | Spire Corporation | Ion implantation of spherical surfaces |
US5152795A (en) * | 1990-04-25 | 1992-10-06 | Spire Corporation | Surgical implants and method |
US5123924A (en) * | 1990-04-25 | 1992-06-23 | Spire Corporation | Surgical implants and method |
US5226975A (en) * | 1991-03-20 | 1993-07-13 | Cummins Engine Company, Inc. | Plasma nitride chromium plated coating method |
FR2679258B1 (fr) * | 1991-07-16 | 1993-11-19 | Centre Stephanois Recherc Meca | Procede de traitement de pieces en metal ferreux pour ameliorer simultanement leur resistance a la corrosion et leurs proprietes de friction. |
FR2681472B1 (fr) | 1991-09-18 | 1993-10-29 | Commissariat Energie Atomique | Procede de fabrication de films minces de materiau semiconducteur. |
DE4238993C1 (fr) * | 1992-01-20 | 1993-07-01 | Leybold Durferrit Gmbh, 5000 Koeln, De | |
CH689767A5 (de) * | 1992-03-24 | 1999-10-15 | Balzers Hochvakuum | Verfahren zur Werkstueckbehandlung in einer Vakuumatmosphaere und Vakuumbehandlungsanlage. |
FR2689976B1 (fr) * | 1992-04-14 | 1995-06-30 | Innovatique Sa | Procede et dispositif pour la determination et le controle de la composition du melange gazeux reactif utilise au cours d'un traitement thermochimique sous atmosphere rarefiee. |
US5868878A (en) * | 1993-08-27 | 1999-02-09 | Hughes Electronics Corporation | Heat treatment by plasma electron heating and solid/gas jet cooling |
DE4427902C1 (de) | 1994-08-06 | 1995-03-30 | Leybold Durferrit Gmbh | Verfahren zum Aufkohlen von Bauteilen aus kohlungsfähigen Werkstoffen mittels einer impulsförmig betriebenen Plasmaentladung |
FR2748851B1 (fr) * | 1996-05-15 | 1998-08-07 | Commissariat Energie Atomique | Procede de realisation d'une couche mince de materiau semiconducteur |
US6291313B1 (en) | 1997-05-12 | 2001-09-18 | Silicon Genesis Corporation | Method and device for controlled cleaving process |
US6033974A (en) | 1997-05-12 | 2000-03-07 | Silicon Genesis Corporation | Method for controlled cleaving process |
US6146979A (en) | 1997-05-12 | 2000-11-14 | Silicon Genesis Corporation | Pressurized microbubble thin film separation process using a reusable substrate |
US20070122997A1 (en) | 1998-02-19 | 2007-05-31 | Silicon Genesis Corporation | Controlled process and resulting device |
US6027988A (en) * | 1997-05-28 | 2000-02-22 | The Regents Of The University Of California | Method of separating films from bulk substrates by plasma immersion ion implantation |
US6548382B1 (en) | 1997-07-18 | 2003-04-15 | Silicon Genesis Corporation | Gettering technique for wafers made using a controlled cleaving process |
FR2773261B1 (fr) | 1997-12-30 | 2000-01-28 | Commissariat Energie Atomique | Procede pour le transfert d'un film mince comportant une etape de creation d'inclusions |
JPH11316919A (ja) | 1998-04-30 | 1999-11-16 | Hitachi Ltd | スピントンネル磁気抵抗効果型磁気ヘッド |
US6291326B1 (en) | 1998-06-23 | 2001-09-18 | Silicon Genesis Corporation | Pre-semiconductor process implant and post-process film separation |
US6500732B1 (en) | 1999-08-10 | 2002-12-31 | Silicon Genesis Corporation | Cleaving process to fabricate multilayered substrates using low implantation doses |
US6221740B1 (en) | 1999-08-10 | 2001-04-24 | Silicon Genesis Corporation | Substrate cleaving tool and method |
US6263941B1 (en) | 1999-08-10 | 2001-07-24 | Silicon Genesis Corporation | Nozzle for cleaving substrates |
WO2001011930A2 (fr) | 1999-08-10 | 2001-02-15 | Silicon Genesis Corporation | Procede de clivage permettant de fabriquer des substrats multicouche a l'aide de faibles doses d'implantation |
FR2823599B1 (fr) | 2001-04-13 | 2004-12-17 | Commissariat Energie Atomique | Substrat demomtable a tenue mecanique controlee et procede de realisation |
US8187377B2 (en) | 2002-10-04 | 2012-05-29 | Silicon Genesis Corporation | Non-contact etch annealing of strained layers |
FR2848336B1 (fr) | 2002-12-09 | 2005-10-28 | Commissariat Energie Atomique | Procede de realisation d'une structure contrainte destinee a etre dissociee |
JP4257157B2 (ja) * | 2003-06-13 | 2009-04-22 | 本田技研工業株式会社 | 窒化処理方法及び装置 |
FR2856844B1 (fr) | 2003-06-24 | 2006-02-17 | Commissariat Energie Atomique | Circuit integre sur puce de hautes performances |
FR2857953B1 (fr) | 2003-07-21 | 2006-01-13 | Commissariat Energie Atomique | Structure empilee, et procede pour la fabriquer |
FR2861497B1 (fr) | 2003-10-28 | 2006-02-10 | Soitec Silicon On Insulator | Procede de transfert catastrophique d'une couche fine apres co-implantation |
FR2889887B1 (fr) | 2005-08-16 | 2007-11-09 | Commissariat Energie Atomique | Procede de report d'une couche mince sur un support |
US7811900B2 (en) | 2006-09-08 | 2010-10-12 | Silicon Genesis Corporation | Method and structure for fabricating solar cells using a thick layer transfer process |
US8993410B2 (en) | 2006-09-08 | 2015-03-31 | Silicon Genesis Corporation | Substrate cleaving under controlled stress conditions |
US9362439B2 (en) | 2008-05-07 | 2016-06-07 | Silicon Genesis Corporation | Layer transfer of films utilizing controlled shear region |
US8293619B2 (en) | 2008-08-28 | 2012-10-23 | Silicon Genesis Corporation | Layer transfer of films utilizing controlled propagation |
FR2910179B1 (fr) | 2006-12-19 | 2009-03-13 | Commissariat Energie Atomique | PROCEDE DE FABRICATION DE COUCHES MINCES DE GaN PAR IMPLANTATION ET RECYCLAGE D'UN SUBSTRAT DE DEPART |
FR2925221B1 (fr) | 2007-12-17 | 2010-02-19 | Commissariat Energie Atomique | Procede de transfert d'une couche mince |
US8330126B2 (en) | 2008-08-25 | 2012-12-11 | Silicon Genesis Corporation | Race track configuration and method for wafering silicon solar substrates |
US8329557B2 (en) | 2009-05-13 | 2012-12-11 | Silicon Genesis Corporation | Techniques for forming thin films by implantation with reduced channeling |
US20100294751A1 (en) * | 2009-05-22 | 2010-11-25 | Innovative Engineering & Product Development, Inc. | Variable frequency heating controller |
FR2947098A1 (fr) | 2009-06-18 | 2010-12-24 | Commissariat Energie Atomique | Procede de transfert d'une couche mince sur un substrat cible ayant un coefficient de dilatation thermique different de celui de la couche mince |
BR102014026134B1 (pt) * | 2014-10-20 | 2022-09-27 | Universidade Federal De Santa Catarina | Processo e reator de plasma para tratamento termoquímico de superfície de peças metálicas |
Family Cites Families (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
NL91406C (fr) * | 1950-08-03 | |||
US3228809A (en) * | 1953-12-09 | 1966-01-11 | Berghaus Elektrophysik Anst | Method of regulating an electric glow discharge and discharge vessel therefor |
US3108900A (en) * | 1959-04-13 | 1963-10-29 | Cornelius A Papp | Apparatus and process for producing coatings on metals |
US3190772A (en) * | 1960-02-10 | 1965-06-22 | Berghaus Bernhard | Method of hardening work in an electric glow discharge |
GB1255321A (en) * | 1968-03-11 | 1971-12-01 | Lucas Industries Ltd | Surface diffusion processes using electrical glow discharges |
FR2324755A1 (fr) * | 1975-09-19 | 1977-04-15 | Anvar | Dispositif de pulverisation cathodique de grande vitesse de depot |
FR2332336A1 (fr) * | 1975-11-21 | 1977-06-17 | Vide & Traitement Sa | Procede et four pour la realisation de traitements de metaux par bombardement ionique |
FR2332337A1 (fr) * | 1975-11-21 | 1977-06-17 | Vide & Traitement Sa | Four de traitement thermique ou thermochimique par bombardement ionique |
CH611938A5 (fr) * | 1976-05-19 | 1979-06-29 | Battelle Memorial Institute | |
FR2379615A1 (fr) * | 1977-02-08 | 1978-09-01 | Vide & Traitement Sa | Procede de traitement thermochimique de metaux |
JPS5429845A (en) * | 1977-08-10 | 1979-03-06 | Kawasaki Heavy Ind Ltd | Ion nitriding treatment method |
US4331856A (en) * | 1978-10-06 | 1982-05-25 | Wellman Thermal Systems Corporation | Control system and method of controlling ion nitriding apparatus |
US4253907A (en) * | 1979-03-28 | 1981-03-03 | Western Electric Company, Inc. | Anisotropic plasma etching |
JPS5813625B2 (ja) * | 1979-12-12 | 1983-03-15 | 超エル・エス・アイ技術研究組合 | ガスプラズマ食刻法 |
US4297387A (en) * | 1980-06-04 | 1981-10-27 | Battelle Development Corporation | Cubic boron nitride preparation |
US4342631A (en) * | 1980-06-16 | 1982-08-03 | Illinois Tool Works Inc. | Gasless ion plating process and apparatus |
-
1981
- 1981-03-13 FR FR8105107A patent/FR2501727A1/fr active Granted
-
1982
- 1982-03-08 US US06/355,880 patent/US4490190A/en not_active Expired - Fee Related
- 1982-03-09 AT AT82400407T patent/ATE37907T1/de not_active IP Right Cessation
- 1982-03-09 EP EP82400407A patent/EP0062550B1/fr not_active Expired
- 1982-03-09 DE DE8282400407T patent/DE3279106D1/de not_active Expired
- 1982-03-12 JP JP57039264A patent/JPS57210971A/ja active Pending
-
1984
- 1984-10-04 US US06/657,791 patent/US4672170A/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
ATE37907T1 (de) | 1988-10-15 |
EP0062550A1 (fr) | 1982-10-13 |
US4490190A (en) | 1984-12-25 |
JPS57210971A (en) | 1982-12-24 |
EP0062550B1 (fr) | 1988-10-12 |
DE3279106D1 (en) | 1988-11-17 |
US4672170A (en) | 1987-06-09 |
FR2501727A1 (fr) | 1982-09-17 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
CD | Change of name or company name | ||
TP | Transmission of property | ||
ST | Notification of lapse |