FR2475519A1 - Procede de fabrication de nitrure de bore isotrope - Google Patents
Procede de fabrication de nitrure de bore isotrope Download PDFInfo
- Publication number
- FR2475519A1 FR2475519A1 FR8003051A FR8003051A FR2475519A1 FR 2475519 A1 FR2475519 A1 FR 2475519A1 FR 8003051 A FR8003051 A FR 8003051A FR 8003051 A FR8003051 A FR 8003051A FR 2475519 A1 FR2475519 A1 FR 2475519A1
- Authority
- FR
- France
- Prior art keywords
- boron nitride
- gaseous
- boron
- isotropic
- cpd
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 229910052582 BN Inorganic materials 0.000 title claims abstract description 22
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 title claims abstract description 22
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 title claims description 20
- 229910021529 ammonia Inorganic materials 0.000 title claims description 10
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 title claims description 5
- 229910052796 boron Inorganic materials 0.000 title claims description 4
- 238000005229 chemical vapour deposition Methods 0.000 title 1
- 238000006243 chemical reaction Methods 0.000 claims abstract description 18
- 239000007787 solid Substances 0.000 claims abstract description 7
- 229910052799 carbon Inorganic materials 0.000 claims abstract description 6
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 4
- 229910052739 hydrogen Inorganic materials 0.000 claims abstract description 3
- 150000001639 boron compounds Chemical class 0.000 claims description 5
- 238000004519 manufacturing process Methods 0.000 claims description 5
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 4
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 4
- 150000002894 organic compounds Chemical class 0.000 claims description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 3
- 239000007789 gas Substances 0.000 claims description 3
- 239000001301 oxygen Substances 0.000 claims description 3
- 239000001257 hydrogen Substances 0.000 claims description 2
- 239000000203 mixture Substances 0.000 claims description 2
- 239000000376 reactant Substances 0.000 claims description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims 1
- 150000001875 compounds Chemical class 0.000 claims 1
- 230000008021 deposition Effects 0.000 claims 1
- ZOCHARZZJNPSEU-UHFFFAOYSA-N diboron Chemical compound B#B ZOCHARZZJNPSEU-UHFFFAOYSA-N 0.000 claims 1
- 230000008030 elimination Effects 0.000 claims 1
- 238000003379 elimination reaction Methods 0.000 claims 1
- 238000000034 method Methods 0.000 abstract description 8
- 238000010438 heat treatment Methods 0.000 abstract 1
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 2
- 239000011230 binding agent Substances 0.000 description 2
- 229910052810 boron oxide Inorganic materials 0.000 description 2
- 238000010276 construction Methods 0.000 description 2
- JKWMSGQKBLHBQQ-UHFFFAOYSA-N diboron trioxide Chemical compound O=BOB=O JKWMSGQKBLHBQQ-UHFFFAOYSA-N 0.000 description 2
- 239000007792 gaseous phase Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- UGFAIRIUMAVXCW-UHFFFAOYSA-N Carbon monoxide Chemical compound [O+]#[C-] UGFAIRIUMAVXCW-UHFFFAOYSA-N 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 125000004429 atom Chemical group 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- MOWNZPNSYMGTMD-UHFFFAOYSA-N boron monoxide Inorganic materials O=[B] MOWNZPNSYMGTMD-UHFFFAOYSA-N 0.000 description 1
- BRPQOXSCLDDYGP-UHFFFAOYSA-N calcium oxide Chemical compound [O-2].[Ca+2] BRPQOXSCLDDYGP-UHFFFAOYSA-N 0.000 description 1
- ODINCKMPIJJUCX-UHFFFAOYSA-N calcium oxide Inorganic materials [Ca]=O ODINCKMPIJJUCX-UHFFFAOYSA-N 0.000 description 1
- 239000000292 calcium oxide Substances 0.000 description 1
- 229910002091 carbon monoxide Inorganic materials 0.000 description 1
- 239000003153 chemical reaction reagent Substances 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 230000001627 detrimental effect Effects 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 238000007731 hot pressing Methods 0.000 description 1
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 239000013461 intermediate chemical Substances 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 125000002524 organometallic group Chemical group 0.000 description 1
- 239000012071 phase Substances 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 238000000197 pyrolysis Methods 0.000 description 1
- 230000035939 shock Effects 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- FAQYAMRNWDIXMY-UHFFFAOYSA-N trichloroborane Chemical compound ClB(Cl)Cl FAQYAMRNWDIXMY-UHFFFAOYSA-N 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/34—Nitrides
- C23C16/342—Boron nitride
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B21/00—Nitrogen; Compounds thereof
- C01B21/06—Binary compounds of nitrogen with metals, with silicon, or with boron, or with carbon, i.e. nitrides; Compounds of nitrogen with more than one metal, silicon or boron
- C01B21/064—Binary compounds of nitrogen with metals, with silicon, or with boron, or with carbon, i.e. nitrides; Compounds of nitrogen with more than one metal, silicon or boron with boron
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Ceramic Products (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR8003051A FR2475519A1 (fr) | 1980-02-12 | 1980-02-12 | Procede de fabrication de nitrure de bore isotrope |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR8003051A FR2475519A1 (fr) | 1980-02-12 | 1980-02-12 | Procede de fabrication de nitrure de bore isotrope |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| FR2475519A1 true FR2475519A1 (fr) | 1981-08-14 |
| FR2475519B1 FR2475519B1 (enrdf_load_stackoverflow) | 1984-02-03 |
Family
ID=9238490
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| FR8003051A Granted FR2475519A1 (fr) | 1980-02-12 | 1980-02-12 | Procede de fabrication de nitrure de bore isotrope |
Country Status (1)
| Country | Link |
|---|---|
| FR (1) | FR2475519A1 (enrdf_load_stackoverflow) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0313980A1 (en) * | 1987-10-23 | 1989-05-03 | AeroChem Research Laboratories, Inc. | Process and apparatus for the preparation of ceramic powders |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2014148A1 (enrdf_load_stackoverflow) * | 1968-05-31 | 1970-04-17 | Varian Associates | |
| FR2059252A5 (enrdf_load_stackoverflow) * | 1969-08-27 | 1971-05-28 | Wacker Chemitronic | |
| US3692566A (en) * | 1970-11-24 | 1972-09-19 | Us Army | Method of depositing isotropic boron nitride |
| US3825440A (en) * | 1971-07-01 | 1974-07-23 | Us Army | Vapor deposition method |
| US4096297A (en) * | 1973-11-19 | 1978-06-20 | Raytheon Company | Isotropic boron nitride and method of making same |
-
1980
- 1980-02-12 FR FR8003051A patent/FR2475519A1/fr active Granted
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2014148A1 (enrdf_load_stackoverflow) * | 1968-05-31 | 1970-04-17 | Varian Associates | |
| US3561920A (en) * | 1968-05-31 | 1971-02-09 | Varian Associates | Chemical vapor deposition of thick deposits of isotropic boron nitride |
| FR2059252A5 (enrdf_load_stackoverflow) * | 1969-08-27 | 1971-05-28 | Wacker Chemitronic | |
| US3692566A (en) * | 1970-11-24 | 1972-09-19 | Us Army | Method of depositing isotropic boron nitride |
| US3825440A (en) * | 1971-07-01 | 1974-07-23 | Us Army | Vapor deposition method |
| US4096297A (en) * | 1973-11-19 | 1978-06-20 | Raytheon Company | Isotropic boron nitride and method of making same |
Non-Patent Citations (1)
| Title |
|---|
| EXBK/54 * |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0313980A1 (en) * | 1987-10-23 | 1989-05-03 | AeroChem Research Laboratories, Inc. | Process and apparatus for the preparation of ceramic powders |
Also Published As
| Publication number | Publication date |
|---|---|
| FR2475519B1 (enrdf_load_stackoverflow) | 1984-02-03 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| Yuzuriha et al. | Structural and optical properties of plasma-deposited boron nitride films | |
| Kouvetakis et al. | Chemical vapor deposition of gallium nitride from diethylgallium azide | |
| US5190823A (en) | Method for improving adhesion of synthetic diamond coatings to substrates | |
| US3574672A (en) | Cvd process for producing tungsten carbide and article of manufacture | |
| JPH0578844A (ja) | 固体潤滑性を有する非晶質薄膜およびその製造方法 | |
| US4096297A (en) | Isotropic boron nitride and method of making same | |
| US3389977A (en) | Tungsten carbide coated article of manufacture | |
| FR2612946A1 (fr) | Procede et installation pour le depot chimique de revetements ultradurs a temperature moderee | |
| FR2475519A1 (fr) | Procede de fabrication de nitrure de bore isotrope | |
| US5441013A (en) | Method for growing continuous diamond films | |
| JPH05254808A (ja) | 窒化ほう素の作製方法 | |
| Diem et al. | Properties of chemically vapor-deposited Tungsten thin films on silicon wafers | |
| JPH0959067A (ja) | 熱分解窒化硼素容器 | |
| EP0730564B1 (fr) | Procede de densification d'une structure poreuse par du nitrure de bore | |
| JPH05339731A (ja) | 硬質低摩擦層を表面に有する材料の製造方法 | |
| Park et al. | The bond structures and properties of chemically vapour deposited amorphous SiC | |
| EP0112206B1 (fr) | Procédé de revêtement en carbures de surfaces métalliques | |
| JP2000507647A (ja) | 熱分解ＳｉＢＮコーティングの形成方法 | |
| Llewellyn et al. | Low temperature pulsed plasma deposition: III. A method for the deposition of aluminium and tin at room temperature | |
| RU98120361A (ru) | Способ формирования покрытий на основе пиролитического нитрида кремния-бора | |
| JPS58145665A (ja) | 透光性Ｓｉ―Ｎ―Ｂ系非晶質材料およびその製造方法 | |
| KR100235939B1 (ko) | 티타늄탄화질화막 형성방법 | |
| Sugiyama et al. | Chemical vapor deposition of turbostratic and hexagonal boron nitride | |
| Scott et al. | Deposition of a-Si: H by Homogeneous CVD | |
| Scott et al. | CoZZoque C4, suppl6ment au nO1O, Tome 42, octobre 1981 page C4-635 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| CL | Concession to grant licences | ||
| ST | Notification of lapse |