FR2394868A1 - - Google Patents
Info
- Publication number
- FR2394868A1 FR2394868A1 FR7718163A FR7718163A FR2394868A1 FR 2394868 A1 FR2394868 A1 FR 2394868A1 FR 7718163 A FR7718163 A FR 7718163A FR 7718163 A FR7718163 A FR 7718163A FR 2394868 A1 FR2394868 A1 FR 2394868A1
- Authority
- FR
- France
- Prior art keywords
- signal
- read
- gate
- input
- source
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 239000003990 capacitor Substances 0.000 abstract 1
- 230000006870 function Effects 0.000 abstract 1
- 239000011159 matrix material Substances 0.000 abstract 1
- 239000004065 semiconductor Substances 0.000 abstract 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
- G11C16/0466—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells with charge storage in an insulating layer, e.g. metal-nitride-oxide-silicon [MNOS], silicon-oxide-nitride-oxide-silicon [SONOS]
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/24—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using capacitors
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/403—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C14/00—Digital stores characterised by arrangements of cells having volatile and non-volatile storage properties for back-up when the power is down
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Read Only Memory (AREA)
- Dram (AREA)
- Semiconductor Memories (AREA)
Abstract
Une mémoire matricielle comprend un réseau 10 d'éléments de stockage à semi-conducteurs à seuil modifiable 10.10 à 10.32 dont chacun ne comporte qu'une source et une grille, et dont chacun sert, en cours de fonctionnement, de condensateur modifiable pouvant être positionné sélectivement dans un premier ou un second état. Des dispositifs de lecture 12, 18 sont prévus pour appliquer un signal de lecture à la grille d'un élément de stockage sélectionné, et la disposition est telle qu'un signal de tension est ainsi généré à la source de l'élément selectionné, ce signal étant appliqué à une entrée d'un amplificateur de détection 30 qui est disposé pour comparer ce signal à une tension de référence appliquée à une seconde entrée de l'amplificateur et, à la suite de cette comparaison, pour produire un signal de sortie indiquant l'état de l'élément de stockage sélectionné. Une densité d'enregistrement élevée peut être obtenue avec cette mémoire, car aucune connexion de drain aux éléments de stockage n'est nécessaire, et parce que la fonction de lecture est très fiable.
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US05/697,602 US4094008A (en) | 1976-06-18 | 1976-06-18 | Alterable capacitor memory array |
Publications (1)
Publication Number | Publication Date |
---|---|
FR2394868A1 true FR2394868A1 (fr) | 1979-01-12 |
Family
ID=24801772
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR7718163A Withdrawn FR2394868A1 (fr) | 1976-06-18 | 1977-06-14 |
Country Status (5)
Country | Link |
---|---|
US (1) | US4094008A (fr) |
JP (1) | JPS6032918B2 (fr) |
DE (1) | DE2727419C3 (fr) |
FR (1) | FR2394868A1 (fr) |
GB (1) | GB1530113A (fr) |
Families Citing this family (35)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4233526A (en) * | 1977-04-08 | 1980-11-11 | Nippon Electric Co., Ltd. | Semiconductor memory device having multi-gate transistors |
US4170741A (en) * | 1978-03-13 | 1979-10-09 | Westinghouse Electric Corp. | High speed CMOS sense circuit for semiconductor memories |
US4198694A (en) * | 1978-03-27 | 1980-04-15 | Hewlett-Packard Company | X-Y Addressable memory |
JPS54148363A (en) * | 1978-05-12 | 1979-11-20 | Nec Corp | Tri-state circuit |
US4179626A (en) * | 1978-06-29 | 1979-12-18 | Westinghouse Electric Corp. | Sense circuit for use in variable threshold transistor memory arrays |
WO1980001965A1 (fr) * | 1979-03-13 | 1980-09-18 | Ncr Co | Systeme ram statique non-remanent/remanent |
EP0019987A1 (fr) * | 1979-06-01 | 1980-12-10 | Motorola, Inc. | Amplificateur de détection verrouillable et à grande vitesse utilisant des transistors FET |
US4318014A (en) * | 1979-07-27 | 1982-03-02 | Motorola, Inc. | Selective precharge circuit for read-only-memory |
JPS5627960A (en) * | 1979-08-16 | 1981-03-18 | Nec Corp | Rom cell |
JPS5627959A (en) * | 1979-08-16 | 1981-03-18 | Nec Corp | Rom cell |
US4301518A (en) * | 1979-11-01 | 1981-11-17 | Texas Instruments Incorporated | Differential sensing of single ended memory array |
JPS5693363A (en) * | 1979-12-04 | 1981-07-28 | Fujitsu Ltd | Semiconductor memory |
DE3153700C2 (fr) | 1980-02-04 | 1993-01-28 | Texas Instruments Inc., Dallas, Tex., Us | |
US4453235A (en) * | 1980-05-27 | 1984-06-05 | Supertex, Inc. | Integrated memory circuits |
US4342102A (en) * | 1980-06-18 | 1982-07-27 | Signetics Corporation | Semiconductor memory array |
US4376987A (en) * | 1980-08-18 | 1983-03-15 | Mcdonnell Douglas Corporation | Threshold referenced MNOS sense amplifier |
JPS5856198B2 (ja) * | 1980-09-25 | 1983-12-13 | 株式会社東芝 | 半導体記憶装置 |
JPS5856199B2 (ja) * | 1980-09-25 | 1983-12-13 | 株式会社東芝 | 半導体記憶装置 |
JPS5780828A (en) * | 1980-11-07 | 1982-05-20 | Hitachi Ltd | Semiconductor integrated circuit device |
US4415992A (en) * | 1981-02-25 | 1983-11-15 | Motorola, Inc. | Memory system having memory cells capable of storing more than two states |
US4449203A (en) * | 1981-02-25 | 1984-05-15 | Motorola, Inc. | Memory with reference voltage generator |
JPS58139399A (ja) * | 1982-02-15 | 1983-08-18 | Hitachi Ltd | 半導体記憶装置 |
FR2528613B1 (fr) * | 1982-06-09 | 1991-09-20 | Hitachi Ltd | Memoire a semi-conducteurs |
JPH0612619B2 (ja) * | 1982-09-22 | 1994-02-16 | 株式会社日立製作所 | 半導体メモリ装置 |
US4615020A (en) * | 1983-12-06 | 1986-09-30 | Advanced Micro Devices, Inc. | Nonvolatile dynamic ram circuit |
US4725984A (en) * | 1984-02-21 | 1988-02-16 | Seeq Technology, Inc. | CMOS eprom sense amplifier |
US4636979A (en) * | 1984-11-02 | 1987-01-13 | Motorola, Inc. | Orientation of reference cells in a memory |
US4703455A (en) * | 1985-12-23 | 1987-10-27 | Motorola, Inc. | Bipolar programmable memory and method |
JPH0642318B2 (ja) * | 1988-01-18 | 1994-06-01 | 株式会社東芝 | 半導体メモリ |
JPH0715952B2 (ja) * | 1988-04-13 | 1995-02-22 | 株式会社東芝 | 半導体記憶装置 |
US7180782B2 (en) * | 2005-06-10 | 2007-02-20 | Macronix International Co., Ltd. | Read source line compensation in a non-volatile memory |
US7292485B1 (en) * | 2006-07-31 | 2007-11-06 | Freescale Semiconductor, Inc. | SRAM having variable power supply and method therefor |
US8437174B2 (en) | 2010-02-15 | 2013-05-07 | Micron Technology, Inc. | Memcapacitor devices, field effect transistor devices, non-volatile memory arrays, and methods of programming |
US8416609B2 (en) | 2010-02-15 | 2013-04-09 | Micron Technology, Inc. | Cross-point memory cells, non-volatile memory arrays, methods of reading a memory cell, methods of programming a memory cell, methods of writing to and reading from a memory cell, and computer systems |
US8634224B2 (en) | 2010-08-12 | 2014-01-21 | Micron Technology, Inc. | Memory cells, non-volatile memory arrays, methods of operating memory cells, methods of writing to and reading from a memory cell, and methods of programming a memory cell |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3590337A (en) * | 1968-10-14 | 1971-06-29 | Sperry Rand Corp | Plural dielectric layered electrically alterable non-destructive readout memory element |
US3771148A (en) * | 1972-03-31 | 1973-11-06 | Ncr | Nonvolatile capacitive memory cell |
US3911464A (en) * | 1973-05-29 | 1975-10-07 | Ibm | Nonvolatile semiconductor memory |
LU72605A1 (fr) * | 1974-09-20 | 1975-08-21 | ||
US3916390A (en) * | 1974-12-31 | 1975-10-28 | Ibm | Dynamic memory with non-volatile back-up mode |
-
1976
- 1976-06-18 US US05/697,602 patent/US4094008A/en not_active Expired - Lifetime
-
1977
- 1977-05-25 GB GB22040/77A patent/GB1530113A/en not_active Expired
- 1977-06-10 JP JP52068045A patent/JPS6032918B2/ja not_active Expired
- 1977-06-14 FR FR7718163A patent/FR2394868A1/fr not_active Withdrawn
- 1977-06-18 DE DE2727419A patent/DE2727419C3/de not_active Expired
Also Published As
Publication number | Publication date |
---|---|
US4094008A (en) | 1978-06-06 |
DE2727419B2 (de) | 1979-11-15 |
JPS52155930A (en) | 1977-12-24 |
GB1530113A (en) | 1978-10-25 |
JPS6032918B2 (ja) | 1985-07-31 |
DE2727419C3 (de) | 1988-07-28 |
DE2727419A1 (de) | 1977-12-29 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
ST | Notification of lapse |