FR2374726B1 - - Google Patents
Info
- Publication number
- FR2374726B1 FR2374726B1 FR7737830A FR7737830A FR2374726B1 FR 2374726 B1 FR2374726 B1 FR 2374726B1 FR 7737830 A FR7737830 A FR 7737830A FR 7737830 A FR7737830 A FR 7737830A FR 2374726 B1 FR2374726 B1 FR 2374726B1
- Authority
- FR
- France
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/39—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using thyristors or the avalanche or negative resistance type, e.g. PNPN, SCR, SCS, UJT
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
- G11C11/412—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using field-effect transistors only
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/80—FETs having rectifying junction gate electrodes
- H10D30/83—FETs having PN junction gate electrodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/40—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00 with at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of IGFETs with BJTs
- H10D84/401—Combinations of FETs or IGBTs with BJTs
- H10D84/403—Combinations of FETs or IGBTs with BJTs and with one or more of diodes, resistors or capacitors
- H10D84/406—Combinations of FETs or IGBTs with vertical BJTs and with one or more of diodes, resistors or capacitors
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Semiconductor Memories (AREA)
- Bipolar Transistors (AREA)
- Static Random-Access Memory (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| NL7613999A NL7613999A (en) | 1976-12-17 | 1976-12-17 | RAM semiconductor device with conductor pattern selectors - has only two address conductors per cell allowing size redn. |
| NL7700880A NL7700880A (nl) | 1976-12-17 | 1977-01-28 | Naar willekeur toegankelijk geheugen met junctieveldeffekttransistoren. |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| FR2374726A1 FR2374726A1 (fr) | 1978-07-13 |
| FR2374726B1 true FR2374726B1 (OSRAM) | 1982-05-21 |
Family
ID=26645268
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| FR7737830A Granted FR2374726A1 (fr) | 1976-12-17 | 1977-12-15 | Memoire a acces aleatoire muni de transistor a effet de champ a jonction |
Country Status (12)
| Country | Link |
|---|---|
| US (1) | US4126899A (OSRAM) |
| JP (1) | JPS5814748B2 (OSRAM) |
| AU (1) | AU509810B2 (OSRAM) |
| BR (1) | BR7708370A (OSRAM) |
| DE (1) | DE2755953C2 (OSRAM) |
| ES (1) | ES465088A1 (OSRAM) |
| FR (1) | FR2374726A1 (OSRAM) |
| GB (1) | GB1593435A (OSRAM) |
| IT (1) | IT1088593B (OSRAM) |
| NL (1) | NL7700880A (OSRAM) |
| PL (1) | PL115339B1 (OSRAM) |
| SE (1) | SE7714156L (OSRAM) |
Families Citing this family (18)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE2726014A1 (de) * | 1977-06-08 | 1978-12-21 | Siemens Ag | Dynamisches speicherelement |
| US5298787A (en) * | 1979-08-10 | 1994-03-29 | Massachusetts Institute Of Technology | Semiconductor embedded layer technology including permeable base transistor |
| US4328511A (en) * | 1979-12-10 | 1982-05-04 | Texas Instruments Incorporated | Taper isolated ram cell without gate oxide |
| US4706107A (en) * | 1981-06-04 | 1987-11-10 | Nippon Electric Co., Ltd. | IC memory cells with reduced alpha particle influence |
| FR2566162B1 (fr) * | 1984-06-13 | 1986-08-29 | Thomson Csf | Dispositif memoire d'image analogique utilisant le transfert de charge |
| AT380897B (de) * | 1984-12-10 | 1986-07-25 | Koller Anton | Mischung zur pflege und reinigung von kontaktlinsen |
| WO1988009036A2 (en) * | 1987-05-04 | 1988-11-17 | University Of Waterloo | Vlsi chip |
| TW289168B (OSRAM) * | 1991-12-16 | 1996-10-21 | Philips Nv | |
| JP2004235475A (ja) * | 2003-01-30 | 2004-08-19 | Nec Electronics Corp | 半導体装置 |
| US8014199B2 (en) * | 2006-05-22 | 2011-09-06 | Spansion Llc | Memory system with switch element |
| US8547756B2 (en) | 2010-10-04 | 2013-10-01 | Zeno Semiconductor, Inc. | Semiconductor memory device having an electrically floating body transistor |
| US20080273409A1 (en) * | 2007-05-01 | 2008-11-06 | Thummalapally Damodar R | Junction field effect dynamic random access memory cell and applications therefor |
| US7729149B2 (en) * | 2007-05-01 | 2010-06-01 | Suvolta, Inc. | Content addressable memory cell including a junction field effect transistor |
| US7692220B2 (en) * | 2007-05-01 | 2010-04-06 | Suvolta, Inc. | Semiconductor device storage cell structure, method of operation, and method of manufacture |
| US8035139B2 (en) * | 2007-09-02 | 2011-10-11 | Suvolta, Inc. | Dynamic random access memory having junction field effect transistor cell access device |
| US8130547B2 (en) * | 2007-11-29 | 2012-03-06 | Zeno Semiconductor, Inc. | Method of maintaining the state of semiconductor memory having electrically floating body transistor |
| IN2012DN06399A (OSRAM) | 2010-02-07 | 2015-10-02 | Zeno Semiconductor Inc | |
| US10340276B2 (en) | 2010-03-02 | 2019-07-02 | Zeno Semiconductor, Inc. | Method of maintaining the state of semiconductor memory having electrically floating body transistor |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| NL7208026A (OSRAM) * | 1972-06-13 | 1973-12-17 | ||
| US3836992A (en) * | 1973-03-16 | 1974-09-17 | Ibm | Electrically erasable floating gate fet memory cell |
| US3893152A (en) * | 1973-07-25 | 1975-07-01 | Hung Chang Lin | Metal nitride oxide semiconductor integrated circuit structure |
-
1977
- 1977-01-28 NL NL7700880A patent/NL7700880A/xx not_active Application Discontinuation
- 1977-07-11 US US05/814,648 patent/US4126899A/en not_active Expired - Lifetime
- 1977-12-13 AU AU31487/77A patent/AU509810B2/en not_active Expired
- 1977-12-14 IT IT30711/77A patent/IT1088593B/it active
- 1977-12-14 SE SE7714156A patent/SE7714156L/xx not_active Application Discontinuation
- 1977-12-14 GB GB51999/77A patent/GB1593435A/en not_active Expired
- 1977-12-15 BR BR7708370A patent/BR7708370A/pt unknown
- 1977-12-15 ES ES465088A patent/ES465088A1/es not_active Expired
- 1977-12-15 DE DE2755953A patent/DE2755953C2/de not_active Expired
- 1977-12-15 FR FR7737830A patent/FR2374726A1/fr active Granted
- 1977-12-15 PL PL1977202981A patent/PL115339B1/pl unknown
- 1977-12-16 JP JP52150760A patent/JPS5814748B2/ja not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| PL202981A1 (pl) | 1978-09-11 |
| PL115339B1 (en) | 1981-03-31 |
| IT1088593B (it) | 1985-06-10 |
| GB1593435A (en) | 1981-07-15 |
| FR2374726A1 (fr) | 1978-07-13 |
| ES465088A1 (es) | 1979-01-01 |
| JPS5814748B2 (ja) | 1983-03-22 |
| JPS5386590A (en) | 1978-07-31 |
| NL7700880A (nl) | 1978-08-01 |
| AU3148777A (en) | 1979-06-21 |
| AU509810B2 (en) | 1980-05-22 |
| DE2755953A1 (de) | 1978-06-22 |
| SE7714156L (sv) | 1978-06-18 |
| US4126899A (en) | 1978-11-21 |
| BR7708370A (pt) | 1979-07-17 |
| DE2755953C2 (de) | 1984-07-05 |
Similar Documents
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| ST | Notification of lapse |