FR2330149B1 - - Google Patents

Info

Publication number
FR2330149B1
FR2330149B1 FR7632260A FR7632260A FR2330149B1 FR 2330149 B1 FR2330149 B1 FR 2330149B1 FR 7632260 A FR7632260 A FR 7632260A FR 7632260 A FR7632260 A FR 7632260A FR 2330149 B1 FR2330149 B1 FR 2330149B1
Authority
FR
France
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR7632260A
Other versions
FR2330149A1 (fr
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Publication of FR2330149A1 publication Critical patent/FR2330149A1/fr
Application granted granted Critical
Publication of FR2330149B1 publication Critical patent/FR2330149B1/fr
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier
    • H01L31/107—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier the potential barrier working in avalanche mode, e.g. avalanche photodiode
FR7632260A 1975-10-27 1976-10-26 Photodiode a semi-conducteur et procede de fabrication Granted FR2330149A1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP50129630A JPS5252593A (en) 1975-10-27 1975-10-27 Semiconductor light receiving diode

Publications (2)

Publication Number Publication Date
FR2330149A1 FR2330149A1 (fr) 1977-05-27
FR2330149B1 true FR2330149B1 (fr) 1979-03-02

Family

ID=15014232

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7632260A Granted FR2330149A1 (fr) 1975-10-27 1976-10-26 Photodiode a semi-conducteur et procede de fabrication

Country Status (4)

Country Link
US (1) US4142200A (fr)
JP (1) JPS5252593A (fr)
CA (1) CA1068806A (fr)
FR (1) FR2330149A1 (fr)

Families Citing this family (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4326211A (en) * 1977-09-01 1982-04-20 U.S. Philips Corporation N+PP-PP-P+ Avalanche photodiode
NL7709618A (nl) * 1977-09-01 1979-03-05 Philips Nv Stralingsgevoelige halfgeleiderinrichting en werkwijze ter vervaardiging daarvan.
US4219830A (en) * 1978-06-19 1980-08-26 Gibbons James F Semiconductor solar cell
US4441114A (en) * 1981-12-22 1984-04-03 International Business Machines Corporation CMOS Subsurface breakdown zener diode
US4518255A (en) * 1982-08-20 1985-05-21 Mcdonnell Douglas Corporation Temperature tracking range finder
US4616247A (en) * 1983-11-10 1986-10-07 At&T Bell Laboratories P-I-N and avalanche photodiodes
JPS61174051U (fr) * 1985-04-15 1986-10-29
CA1321660C (fr) * 1985-11-05 1993-08-24 Hideo Yamagishi Dispositif a semiconducteur amorphe a couche intermediaire a grande resistivite ou fortement dopee
CA1280196C (fr) * 1987-07-17 1991-02-12 Paul Perry Webb Photodiode avalanche
JP2729130B2 (ja) * 1992-04-16 1998-03-18 三菱電機株式会社 半導体装置の製造パラメタの設定方法及びその装置
JPH07240534A (ja) * 1993-03-16 1995-09-12 Seiko Instr Inc 光電変換半導体装置及びその製造方法
US5446308A (en) * 1994-04-04 1995-08-29 General Electric Company Deep-diffused planar avalanche photodiode
US5438217A (en) * 1994-04-29 1995-08-01 General Electric Company Planar avalanche photodiode array with sidewall segment
US6552414B1 (en) * 1996-12-24 2003-04-22 Imec Vzw Semiconductor device with selectively diffused regions
JPH1126741A (ja) * 1997-07-04 1999-01-29 Toshiba Corp 固体撮像装置
US6528827B2 (en) 2000-11-10 2003-03-04 Optolynx, Inc. MSM device and method of manufacturing same
EP1470574B9 (fr) * 2002-02-01 2017-04-12 Picometrix, LLC Photodiode pin à grande vitesse avec une sensibilité améliorée
US7323731B2 (en) * 2003-12-12 2008-01-29 Canon Kabushiki Kaisha Photoelectric conversion device, method of manufacturing photoelectric conversion device, and image pickup system
RU2290721C2 (ru) * 2004-05-05 2006-12-27 Борис Анатольевич Долгошеин Кремниевый фотоэлектронный умножитель (варианты) и ячейка для кремниевого фотоэлектронного умножителя
US9087755B2 (en) * 2007-04-24 2015-07-21 Koninklijke Philips N.V. Photodiodes and fabrication thereof
JP5493430B2 (ja) 2009-03-31 2014-05-14 ソニー株式会社 固体撮像装置とその製造方法、及び電子機器
DE102011003454A1 (de) * 2011-02-01 2012-08-02 Siemens Aktiengesellschaft Strahlungsdirektkonverter, Strahlungsdetektor, medizintechnisches Gerät und Verfahren zum Erzeugen eines Strahlungsdirektkonverters
NL2011568A (en) * 2012-10-31 2014-05-06 Asml Netherlands Bv Sensor and lithographic apparatus.
DE102013018789A1 (de) 2012-11-29 2014-06-05 Infineon Technologies Ag Steuern lichterzeugter Ladungsträger
JP7169071B2 (ja) * 2018-02-06 2022-11-10 ソニーセミコンダクタソリューションズ株式会社 画素構造、撮像素子、撮像装置、および電子機器
US11508869B2 (en) * 2019-08-06 2022-11-22 Ohio State Innovation Foundation Lateral interband type II engineered (LITE) detector

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1300164B (de) * 1967-01-26 1969-07-31 Itt Ind Gmbh Deutsche Verfahren zum Herstellen von Zenerdioden
FR2108781B1 (fr) * 1970-10-05 1974-10-31 Radiotechnique Compelec
US3886579A (en) * 1972-07-28 1975-05-27 Hitachi Ltd Avalanche photodiode
FR2252653B1 (fr) * 1973-11-28 1976-10-01 Thomson Csf
CA1015069A (en) * 1974-04-01 1977-08-02 Chung K. Kim Dynamic negative resistance diode
US3921192A (en) * 1974-05-28 1975-11-18 Gen Electric Avalanche diode
US3990099A (en) * 1974-12-05 1976-11-02 Rca Corporation Planar Trapatt diode
US4060820A (en) * 1976-01-05 1977-11-29 Raytheon Company Low noise read-type diode

Also Published As

Publication number Publication date
FR2330149A1 (fr) 1977-05-27
JPS5745067B2 (fr) 1982-09-25
JPS5252593A (en) 1977-04-27
US4142200A (en) 1979-02-27
CA1068806A (fr) 1979-12-25

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Legal Events

Date Code Title Description
TP Transmission of property
CA Change of address