FR2321769A1 - ELECTRONIC OR ELECTRIC COMPOSITE DEVICE CONTAINING A THIN FILM OF AN ORGANIC MATTER - Google Patents

ELECTRONIC OR ELECTRIC COMPOSITE DEVICE CONTAINING A THIN FILM OF AN ORGANIC MATTER

Info

Publication number
FR2321769A1
FR2321769A1 FR7625128A FR7625128A FR2321769A1 FR 2321769 A1 FR2321769 A1 FR 2321769A1 FR 7625128 A FR7625128 A FR 7625128A FR 7625128 A FR7625128 A FR 7625128A FR 2321769 A1 FR2321769 A1 FR 2321769A1
Authority
FR
France
Prior art keywords
electronic
thin film
organic matter
device containing
composite device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7625128A
Other languages
French (fr)
Other versions
FR2321769B1 (en
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Imperial Chemical Industries Ltd
Original Assignee
Imperial Chemical Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Imperial Chemical Industries Ltd filed Critical Imperial Chemical Industries Ltd
Publication of FR2321769A1 publication Critical patent/FR2321769A1/en
Application granted granted Critical
Publication of FR2321769B1 publication Critical patent/FR2321769B1/fr
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02107Forming insulating materials on a substrate
    • H01L21/02109Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02118Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer carbon based polymeric organic or inorganic material, e.g. polyimides, poly cyclobutene or PVC
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B82NANOTECHNOLOGY
    • B82YSPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02107Forming insulating materials on a substrate
    • H01L21/02225Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02282Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process liquid deposition, e.g. spin-coating, sol-gel techniques, spray coating
    • H01L21/02285Langmuir-Blodgett techniques
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05BELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00Electroluminescent light sources
    • H05B33/10Apparatus or processes specially adapted to the manufacture of electroluminescent light sources
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05BELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00Electroluminescent light sources
    • H05B33/12Light sources with substantially two-dimensional radiating surfaces
    • H05B33/14Light sources with substantially two-dimensional radiating surfaces characterised by the chemical or physical composition or the arrangement of the electroluminescent material, or by the simultaneous addition of the electroluminescent material in or onto the light source
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having a potential-jump barrier or a surface barrier
    • H10K10/40Organic transistors
    • H10K10/46Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having a potential-jump barrier or a surface barrier
    • H10K10/40Organic transistors
    • H10K10/46Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462Insulated gate field-effect transistors [IGFETs]
    • H10K10/464Lateral top-gate IGFETs comprising only a single gate
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having a potential-jump barrier or a surface barrier
    • H10K10/40Organic transistors
    • H10K10/46Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462Insulated gate field-effect transistors [IGFETs]
    • H10K10/466Lateral bottom-gate IGFETs comprising only a single gate
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having a potential-jump barrier or a surface barrier
    • H10K10/701Organic molecular electronic devices
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/451Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising a metal-semiconductor-metal [m-s-m] structure
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00Organic light-emitting devices
    • H10K50/10OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/11OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/701Langmuir Blodgett films
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10NELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N60/00Superconducting devices
    • H10N60/01Manufacture or treatment
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/10Organic polymers or oligomers
    • H10K85/141Organic polymers or oligomers comprising aliphatic or olefinic chains, e.g. poly N-vinylcarbazol, PVC or PTFE
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/30Coordination compounds
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60Organic compounds having low molecular weight
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60Organic compounds having low molecular weight
    • H10K85/611Charge transfer complexes
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60Organic compounds having low molecular weight
    • H10K85/615Polycyclic condensed aromatic hydrocarbons, e.g. anthracene
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60Organic compounds having low molecular weight
    • H10K85/615Polycyclic condensed aromatic hydrocarbons, e.g. anthracene
    • H10K85/621Aromatic anhydride or imide compounds, e.g. perylene tetra-carboxylic dianhydride or perylene tetracarboxylic di-imide
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60Organic compounds having low molecular weight
    • H10K85/631Amine compounds having at least two aryl rest on at least one amine-nitrogen atom, e.g. triphenylamine
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60Organic compounds having low molecular weight
    • H10K85/649Aromatic compounds comprising a hetero atom
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60Organic compounds having low molecular weight
    • H10K85/649Aromatic compounds comprising a hetero atom
    • H10K85/652Cyanine dyes
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00Energy generation through renewable energy sources
    • Y02E10/50Photovoltaic [PV] energy
    • Y02E10/549Organic PV cells
FR7625128A 1975-08-18 1976-08-18 ELECTRONIC OR ELECTRIC COMPOSITE DEVICE CONTAINING A THIN FILM OF AN ORGANIC MATTER Granted FR2321769A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB34263/75A GB1572181A (en) 1975-08-18 1975-08-18 Device comprising a thin film of organic materila

Publications (2)

Publication Number Publication Date
FR2321769A1 true FR2321769A1 (en) 1977-03-18
FR2321769B1 FR2321769B1 (en) 1982-10-29

Family

ID=10363472

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7625128A Granted FR2321769A1 (en) 1975-08-18 1976-08-18 ELECTRONIC OR ELECTRIC COMPOSITE DEVICE CONTAINING A THIN FILM OF AN ORGANIC MATTER

Country Status (5)

Country Link
JP (1) JPS5235587A (en)
DE (1) DE2637206A1 (en)
FR (1) FR2321769A1 (en)
GB (1) GB1572181A (en)
NL (1) NL7609163A (en)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0000829A1 (en) * 1977-08-02 1979-02-21 EASTMAN KODAK COMPANY (a New Jersey corporation) Photovoltaic elements
WO1983003165A1 (en) * 1982-03-05 1983-09-15 Winter, Christopher, Simon Polymeric films
EP0218422A2 (en) * 1985-09-30 1987-04-15 Kabushiki Kaisha Toshiba Semiconductor light-emitting element
EP0239980A2 (en) * 1986-04-01 1987-10-07 Kanegafuchi Kagaku Kogyo Kabushiki Kaisha Electric-electronic device including polyimide thin film
EP0252756A2 (en) * 1986-07-10 1988-01-13 Canon Kabushiki Kaisha Semiconductor device comprising an organic material
WO1989003588A1 (en) * 1987-10-09 1989-04-20 Hughes Aircraft Company GaAs ELECTRICAL CIRCUIT DEVICES WITH LANGMUIR-BLODGETT INSULATOR LAYER
EP0237017A3 (en) * 1986-03-11 1990-03-28 Kanegafuchi Kagaku Kogyo Kabushiki Kaisha Electric-electronic device including polyimide thin film

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0076060B1 (en) * 1981-09-25 1986-12-17 Imperial Chemical Industries Plc Method of applying thin films to substrates
JPH0669006B2 (en) * 1984-04-12 1994-08-31 松下電器産業株式会社 Organic magnetic thin film and method for manufacturing the same
JPS60223887A (en) * 1984-04-20 1985-11-08 Canon Inc Luminescent display element
US4773742A (en) * 1984-05-15 1988-09-27 Canon Kabushiki Kaisha Display method with fatly acid ester host molecule
JPH0610734B2 (en) * 1984-05-15 1994-02-09 キヤノン株式会社 Display medium
JPS6137888A (en) * 1984-07-31 1986-02-22 Canon Inc El element
JPS6137887A (en) * 1984-07-31 1986-02-22 Canon Inc El element
JPS6137889A (en) * 1984-07-31 1986-02-22 Canon Inc El element
JPS6137858A (en) * 1984-07-31 1986-02-22 Canon Inc Electroluminescent element
JPS6137883A (en) * 1984-07-31 1986-02-22 Canon Inc Electroluminescent element
JPS61219185A (en) * 1985-03-26 1986-09-29 Toshiba Corp Light emitting element
GB8527213D0 (en) * 1985-11-05 1985-12-11 British Petroleum Co Plc Separation process
JPH0770708B2 (en) * 1986-03-25 1995-07-31 株式会社東芝 Field effect transistor
US4714838A (en) * 1986-10-31 1987-12-22 Minnesota Mining And Manufacturing Company Second harmonic generation with N,N'-substituted barbituric acids
FI77679C (en) * 1987-02-23 1989-04-10 K & V Licencing Oy Film aggregate and process for its preparation.
JP2651237B2 (en) * 1989-02-10 1997-09-10 出光興産株式会社 Thin-film electroluminescence device
US5200668A (en) * 1988-11-21 1993-04-06 Mitsui Toatsu Chemicals, Inc. Luminescence element
JP2651233B2 (en) * 1989-01-20 1997-09-10 出光興産株式会社 Thin-film organic EL device
US5006915A (en) * 1989-02-14 1991-04-09 Ricoh Company, Ltd. Electric device and photoelectric conversion device comprising the same
JPH03105896A (en) * 1989-09-20 1991-05-02 Hitachi Ltd El device
US7186380B2 (en) 2002-07-01 2007-03-06 Hewlett-Packard Development Company, L.P. Transistor and sensors made from molecular materials with electric dipoles

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2153441A1 (en) * 1971-10-27 1973-05-10 Licentia Gmbh Tempering semiconductor elements - before application of photolacquer

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
EXBK/72 *
EXBK/75 *

Cited By (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0000829A1 (en) * 1977-08-02 1979-02-21 EASTMAN KODAK COMPANY (a New Jersey corporation) Photovoltaic elements
WO1983003165A1 (en) * 1982-03-05 1983-09-15 Winter, Christopher, Simon Polymeric films
EP0218422A3 (en) * 1985-09-30 1989-11-15 Kabushiki Kaisha Toshiba Semiconductor light-emitting element
EP0218422A2 (en) * 1985-09-30 1987-04-15 Kabushiki Kaisha Toshiba Semiconductor light-emitting element
US5072262A (en) * 1986-03-11 1991-12-10 Kanegafuchi Kagaku Kogyo Kabushiki Kaisha Electric-electronic device including polyimide thin film
EP0237017A3 (en) * 1986-03-11 1990-03-28 Kanegafuchi Kagaku Kogyo Kabushiki Kaisha Electric-electronic device including polyimide thin film
EP0239980A3 (en) * 1986-04-01 1990-04-11 Kanegafuchi Kagaku Kogyo Kabushiki Kaisha Electric-electronic device including polyimide thin film
EP0239980A2 (en) * 1986-04-01 1987-10-07 Kanegafuchi Kagaku Kogyo Kabushiki Kaisha Electric-electronic device including polyimide thin film
EP0252756A3 (en) * 1986-07-10 1989-11-15 Canon Kabushiki Kaisha Semiconductor device comprising an organic material
EP0252756A2 (en) * 1986-07-10 1988-01-13 Canon Kabushiki Kaisha Semiconductor device comprising an organic material
EP0502590A2 (en) * 1986-07-10 1992-09-09 Canon Kabushiki Kaisha Semiconductor device comprising an organic material
EP0502590A3 (en) * 1986-07-10 1993-04-28 Canon Kabushiki Kaisha Semiconductor device comprising an organic material
WO1989003588A1 (en) * 1987-10-09 1989-04-20 Hughes Aircraft Company GaAs ELECTRICAL CIRCUIT DEVICES WITH LANGMUIR-BLODGETT INSULATOR LAYER

Also Published As

Publication number Publication date
FR2321769B1 (en) 1982-10-29
DE2637206A1 (en) 1977-03-10
GB1572181A (en) 1980-07-23
JPS5235587A (en) 1977-03-18
NL7609163A (en) 1977-02-22

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