FR2304399A1 - Procede d'obtention par croissance cristalline en phase vapeur de monocristaux de nitrure de gallium - Google Patents
Procede d'obtention par croissance cristalline en phase vapeur de monocristaux de nitrure de galliumInfo
- Publication number
- FR2304399A1 FR2304399A1 FR7508613A FR7508613A FR2304399A1 FR 2304399 A1 FR2304399 A1 FR 2304399A1 FR 7508613 A FR7508613 A FR 7508613A FR 7508613 A FR7508613 A FR 7508613A FR 2304399 A1 FR2304399 A1 FR 2304399A1
- Authority
- FR
- France
- Prior art keywords
- vapour phase
- ammonia
- partial pressure
- hydrogen chloride
- halide
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 title 2
- 229910002601 GaN Inorganic materials 0.000 title 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 title 1
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 title 1
- 229910021529 ammonia Inorganic materials 0.000 title 1
- 229910052733 gallium Inorganic materials 0.000 title 1
- -1 gallium halide Chemical class 0.000 title 1
- 229910000041 hydrogen chloride Inorganic materials 0.000 title 1
- IXCSERBJSXMMFS-UHFFFAOYSA-N hydrogen chloride Substances Cl.Cl IXCSERBJSXMMFS-UHFFFAOYSA-N 0.000 title 1
- 230000015572 biosynthetic process Effects 0.000 abstract 1
- 239000012159 carrier gas Substances 0.000 abstract 1
- 238000006243 chemical reaction Methods 0.000 abstract 1
- 239000013078 crystal Substances 0.000 abstract 1
- 230000008021 deposition Effects 0.000 abstract 1
- 238000005401 electroluminescence Methods 0.000 abstract 1
- 150000004820 halides Chemical class 0.000 abstract 1
- 239000000463 material Substances 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 238000006862 quantum yield reaction Methods 0.000 abstract 1
- 238000001228 spectrum Methods 0.000 abstract 1
- 238000003786 synthesis reaction Methods 0.000 abstract 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
- C01G15/00—Compounds of gallium, indium or thallium
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Electroluminescent Light Sources (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Priority Applications (7)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR7508613A FR2304399A1 (fr) | 1975-03-19 | 1975-03-19 | Procede d'obtention par croissance cristalline en phase vapeur de monocristaux de nitrure de gallium |
| CA247,472A CA1071068A (en) | 1975-03-19 | 1976-03-09 | Method of manufacturing single crystals by growth from the vapour phase |
| DE2609907A DE2609907C2 (de) | 1975-03-19 | 1976-03-10 | Verfahren zum epitaktischen Abscheiden von einkristallinem Galliumnitrid auf einem Substrat |
| GB10499/76A GB1536586A (en) | 1975-03-19 | 1976-03-16 | Method of manufacturing single crystals of gallium nitride by growth from the vapour phase |
| IT21264/76A IT1058440B (it) | 1975-03-19 | 1976-03-16 | Metodo per la produzione di singoli cristalli per crescita dalla fase vapore |
| US05/667,690 US4144116A (en) | 1975-03-19 | 1976-03-17 | Vapor deposition of single crystal gallium nitride |
| JP51029398A JPS51117199A (en) | 1975-03-19 | 1976-03-19 | Method of making single crystal |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR7508613A FR2304399A1 (fr) | 1975-03-19 | 1975-03-19 | Procede d'obtention par croissance cristalline en phase vapeur de monocristaux de nitrure de gallium |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| FR2304399A1 true FR2304399A1 (fr) | 1976-10-15 |
| FR2304399B1 FR2304399B1 (enrdf_load_stackoverflow) | 1977-11-18 |
Family
ID=9152782
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| FR7508613A Granted FR2304399A1 (fr) | 1975-03-19 | 1975-03-19 | Procede d'obtention par croissance cristalline en phase vapeur de monocristaux de nitrure de gallium |
Country Status (1)
| Country | Link |
|---|---|
| FR (1) | FR2304399A1 (enrdf_load_stackoverflow) |
-
1975
- 1975-03-19 FR FR7508613A patent/FR2304399A1/fr active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| FR2304399B1 (enrdf_load_stackoverflow) | 1977-11-18 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| GB1536586A (en) | Method of manufacturing single crystals of gallium nitride by growth from the vapour phase | |
| US6406540B1 (en) | Process and apparatus for the growth of nitride materials | |
| KR101738638B1 (ko) | 삼염화 갈륨가스의 제조방법 및 질화물 반도체 결정의 제조방법 | |
| GB1346323A (en) | Process for producing semiconductor nitride films | |
| JP2000044400A5 (enrdf_load_stackoverflow) | ||
| EP0801156A3 (en) | Process for vapor phase epitaxy of compound semiconductor | |
| JPH0331678B2 (enrdf_load_stackoverflow) | ||
| JPS5815480B2 (ja) | チツカガリウムタンケツシヨウノ セイチヨウホウホウ | |
| Jeong et al. | Steric hindrance effects in atomic layer epitaxy of InAs | |
| FR2304398A1 (fr) | Procede d'obtention par heteroepitaxie en phase vapeur de monocristaux de nitrure de gallium | |
| FR2304401A1 (fr) | Procede d'obtention de monocristaux de nitrure de gallium de grande surface | |
| FR2304399A1 (fr) | Procede d'obtention par croissance cristalline en phase vapeur de monocristaux de nitrure de gallium | |
| US9023673B1 (en) | Free HCL used during pretreatment and AlGaN growth to control growth layer orientation and inclusions | |
| Zhou et al. | Growth mechanisms in excimer laser photolytic deposition of gallium nitride at 500 C | |
| JPH09251957A (ja) | 3−5族化合物半導体の製造方法 | |
| JP4034261B2 (ja) | Iii族窒化物の製造方法 | |
| JPS6221758B2 (enrdf_load_stackoverflow) | ||
| CN100378255C (zh) | 一种a面和m面GaN薄膜材料的控制生长方法 | |
| JPH0754806B2 (ja) | 化合物半導体単結晶膜の成長方法 | |
| JPS61291495A (ja) | 炭化珪素単結晶基板の製造方法 | |
| JPS5924760B2 (ja) | マグネシアスピネルの気相成長方法 | |
| Takahashi et al. | Growth of InN pillar crystal films by means of atmospheric pressure halide chemical vapor deposition | |
| JPH09186091A (ja) | Iii−v族化合物半導体の製造方法 | |
| JPS63103894A (ja) | 窒化ガリウム結晶の成長方法 | |
| JPS5957997A (ja) | 窒化ガリウム単結晶膜の製造法 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| CA | Change of address | ||
| CD | Change of name or company name | ||
| ST | Notification of lapse |