FR2285678A1 - Memoire electronique fabriquee selon la technique integree - Google Patents

Memoire electronique fabriquee selon la technique integree

Info

Publication number
FR2285678A1
FR2285678A1 FR7528358A FR7528358A FR2285678A1 FR 2285678 A1 FR2285678 A1 FR 2285678A1 FR 7528358 A FR7528358 A FR 7528358A FR 7528358 A FR7528358 A FR 7528358A FR 2285678 A1 FR2285678 A1 FR 2285678A1
Authority
FR
France
Prior art keywords
manufactured according
electronic memory
integrated technique
memory manufactured
integrated
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7528358A
Other languages
English (en)
French (fr)
Other versions
FR2285678B1 (enrdf_load_stackoverflow
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens Corp
Original Assignee
Siemens Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from DE19742445078 external-priority patent/DE2445078C3/de
Priority claimed from DE19752505821 external-priority patent/DE2505821C3/de
Application filed by Siemens Corp filed Critical Siemens Corp
Publication of FR2285678A1 publication Critical patent/FR2285678A1/fr
Application granted granted Critical
Publication of FR2285678B1 publication Critical patent/FR2285678B1/fr
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/68—Floating-gate IGFETs
    • H10D30/681—Floating-gate IGFETs having only two programming levels
    • H10D30/684—Floating-gate IGFETs having only two programming levels programmed by hot carrier injection
    • H10D30/685—Floating-gate IGFETs having only two programming levels programmed by hot carrier injection from the channel
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/403—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh
    • G11C11/404—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh with one charge-transfer gate, e.g. MOS transistor, per cell
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0408—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors
    • G11C16/0416—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors comprising cells containing a single floating gate transistor and no select transistor, e.g. UV EPROM
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0408—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors
    • G11C16/0425—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors comprising cells containing a merged floating gate and select transistor
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G11C16/14—Circuits for erasing electrically, e.g. erase voltage switching circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G11C16/14—Circuits for erasing electrically, e.g. erase voltage switching circuits
    • G11C16/16—Circuits for erasing electrically, e.g. erase voltage switching circuits for erasing blocks, e.g. arrays, words, groups
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Non-Volatile Memory (AREA)
  • Read Only Memory (AREA)
FR7528358A 1974-09-20 1975-09-16 Memoire electronique fabriquee selon la technique integree Granted FR2285678A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE19742445078 DE2445078C3 (de) 1974-09-20 In integrierter Technik hergestellter elektronischer Speicher
DE19752505821 DE2505821C3 (de) 1975-02-12 1975-02-12 Verfahren zum Betrieb eines in integrierter Technik hergestellten elektronischen Speichers

Publications (2)

Publication Number Publication Date
FR2285678A1 true FR2285678A1 (fr) 1976-04-16
FR2285678B1 FR2285678B1 (enrdf_load_stackoverflow) 1979-03-23

Family

ID=25767729

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7528358A Granted FR2285678A1 (fr) 1974-09-20 1975-09-16 Memoire electronique fabriquee selon la technique integree

Country Status (9)

Country Link
JP (1) JPS5158078A (enrdf_load_stackoverflow)
BE (1) BE833630A (enrdf_load_stackoverflow)
CH (1) CH607234A5 (enrdf_load_stackoverflow)
DK (1) DK423175A (enrdf_load_stackoverflow)
FR (1) FR2285678A1 (enrdf_load_stackoverflow)
GB (1) GB1517926A (enrdf_load_stackoverflow)
IT (1) IT1042649B (enrdf_load_stackoverflow)
NL (1) NL7510941A (enrdf_load_stackoverflow)
SE (1) SE7510482L (enrdf_load_stackoverflow)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5654693A (en) * 1979-10-05 1981-05-14 Hitachi Ltd Programable rom
US4542485A (en) * 1981-01-14 1985-09-17 Tokyo Shibaura Denki Kabushiki Kaisha Semiconductor integrated circuit
JPS6284496A (ja) * 1986-08-25 1987-04-17 Hitachi Ltd プログラマブルｒｏｍ

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS526148B2 (enrdf_load_stackoverflow) * 1972-05-18 1977-02-19

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
NEANT *

Also Published As

Publication number Publication date
CH607234A5 (enrdf_load_stackoverflow) 1978-11-30
NL7510941A (nl) 1976-03-23
SE7510482L (sv) 1976-03-22
GB1517926A (en) 1978-07-19
BE833630A (fr) 1976-03-19
JPS5158078A (en) 1976-05-21
DK423175A (da) 1976-03-21
FR2285678B1 (enrdf_load_stackoverflow) 1979-03-23
IT1042649B (it) 1980-01-30

Similar Documents

Publication Publication Date Title
FR2323851A1 (fr) Verrou electronique
FR2278208A1 (fr) Circuit integre
AT373724B (de) Integrierte schaltung
FR2298160A1 (fr) Memoire semi-conductrice
RO82134A (ro) Calculator electronic
FR2292383A1 (fr) Circuit logique integre programmable
FR2296835A1 (fr) Cle dynamometrique electronique
BE832840A (fr) Memoire a circuit integre
DE2559729A1 (de) Integrierte schaltung
BE835930A (fr) Circuit logique
AT349065B (de) Integrierte schaltung
FR2282748A1 (fr) Oscillateur electronique
SE397142B (sv) Elektrostaisk kopieringsmaskin
BE762307A (fr) Horloge electronique a faible consommation
BE809259A (fr) Calculateur electronique
FR2286470A1 (fr) Element de memoire statique
NL7416395A (nl) Elektronenmikroskoop.
BE760443R (fr) Multiselecteur electronique
SE7412165L (sv) Integrerad krets
BE827042R (fr) Element de selection electronique
SE7506416L (sv) Elektronisk taxameter.
BE833630A (fr) Memoire electronique fabriquee selon la technique integree
IT1020822B (it) Tastiera elettronica
FR2296213A1 (fr) Horloge electronique fonctionnant numeriquement
FR2281629A1 (fr) Circuit memoire analogique

Legal Events

Date Code Title Description
ST Notification of lapse