FR2283550B1 - - Google Patents
Info
- Publication number
- FR2283550B1 FR2283550B1 FR7526412A FR7526412A FR2283550B1 FR 2283550 B1 FR2283550 B1 FR 2283550B1 FR 7526412 A FR7526412 A FR 7526412A FR 7526412 A FR7526412 A FR 7526412A FR 2283550 B1 FR2283550 B1 FR 2283550B1
- Authority
- FR
- France
- Prior art keywords
- group iii
- monocrystalline
- substrate
- devices
- polycrystalline
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000000463 material Substances 0.000 abstract 6
- 239000010410 layer Substances 0.000 abstract 4
- 239000000758 substrate Substances 0.000 abstract 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 2
- 230000004888 barrier function Effects 0.000 abstract 2
- 238000002955 isolation Methods 0.000 abstract 2
- 238000000034 method Methods 0.000 abstract 2
- 238000002048 anodisation reaction Methods 0.000 abstract 1
- 238000005422 blasting Methods 0.000 abstract 1
- 238000006243 chemical reaction Methods 0.000 abstract 1
- 229910052681 coesite Inorganic materials 0.000 abstract 1
- 150000001875 compounds Chemical class 0.000 abstract 1
- 229910052906 cristobalite Inorganic materials 0.000 abstract 1
- 230000008021 deposition Effects 0.000 abstract 1
- 230000003071 parasitic effect Effects 0.000 abstract 1
- 239000004065 semiconductor Substances 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
- 235000012239 silicon dioxide Nutrition 0.000 abstract 1
- 229910052682 stishovite Inorganic materials 0.000 abstract 1
- 239000002344 surface layer Substances 0.000 abstract 1
- 229910052905 tridymite Inorganic materials 0.000 abstract 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
- C30B23/02—Epitaxial-layer growth
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
- C30B23/02—Epitaxial-layer growth
- C30B23/04—Pattern deposit, e.g. by using masks
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02387—Group 13/15 materials
- H01L21/02392—Phosphides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02387—Group 13/15 materials
- H01L21/02395—Arsenides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02439—Materials
- H01L21/02455—Group 13/15 materials
- H01L21/02463—Arsenides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02538—Group 13/15 materials
- H01L21/02546—Arsenides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/0257—Doping during depositing
- H01L21/02573—Conductivity type
- H01L21/02576—N-type
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/0257—Doping during depositing
- H01L21/02573—Conductivity type
- H01L21/02579—P-type
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/02631—Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02656—Special treatments
- H01L21/02658—Pretreatments
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/7605—Making of isolation regions between components between components manufactured in an active substrate comprising AIII BV compounds
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/764—Air gaps
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
- H01L29/0642—Isolation within the component, i.e. internal isolation
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/007—Autodoping
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/065—Gp III-V generic compounds-processing
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/085—Isolated-integrated
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/122—Polycrystalline
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/139—Schottky barrier
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/169—Vacuum deposition, e.g. including molecular beam epitaxy
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Chemical & Material Sciences (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Metallurgy (AREA)
- Crystallography & Structural Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Ceramic Engineering (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
- Electrodes Of Semiconductors (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Element Separation (AREA)
- Junction Field-Effect Transistors (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US501154A US3928092A (en) | 1974-08-28 | 1974-08-28 | Simultaneous molecular beam deposition of monocrystalline and polycrystalline III(a)-V(a) compounds to produce semiconductor devices |
Publications (2)
Publication Number | Publication Date |
---|---|
FR2283550A1 FR2283550A1 (fr) | 1976-03-26 |
FR2283550B1 true FR2283550B1 (fr) | 1978-03-17 |
Family
ID=23992346
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR7526412A Granted FR2283550A1 (fr) | 1974-08-28 | 1975-08-27 | Dispositif a semi-conducteur et son procede de realisation par depot a l'aide de faisceaux moleculaires |
Country Status (8)
Country | Link |
---|---|
US (1) | US3928092A (fr) |
JP (1) | JPS6024579B2 (fr) |
CA (1) | CA1031471A (fr) |
DE (1) | DE2538325C2 (fr) |
FR (1) | FR2283550A1 (fr) |
GB (2) | GB1526416A (fr) |
IT (1) | IT1042046B (fr) |
NL (1) | NL7510130A (fr) |
Families Citing this family (33)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4063974A (en) * | 1975-11-14 | 1977-12-20 | Hughes Aircraft Company | Planar reactive evaporation method for the deposition of compound semiconducting films |
JPS5372A (en) * | 1976-06-24 | 1978-01-05 | Agency Of Ind Science & Technol | Selective doping crystal growing method |
US4076573A (en) * | 1976-12-30 | 1978-02-28 | Rca Corporation | Method of making planar silicon-on-sapphire composite |
US4111725A (en) * | 1977-05-06 | 1978-09-05 | Bell Telephone Laboratories, Incorporated | Selective lift-off technique for fabricating gaas fets |
US4186410A (en) * | 1978-06-27 | 1980-01-29 | Bell Telephone Laboratories, Incorporated | Nonalloyed ohmic contacts to n-type Group III(a)-V(a) semiconductors |
US4216036A (en) * | 1978-08-28 | 1980-08-05 | Bell Telephone Laboratories, Incorporated | Self-terminating thermal oxidation of Al-containing group III-V compound layers |
DE2941908C2 (de) * | 1979-10-17 | 1986-07-03 | Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt | Verfahren zum Herstellen einer eine Silizium-Schicht aufweisenden Solarzelle |
JPS57121219A (en) * | 1981-01-21 | 1982-07-28 | Hitachi Ltd | Manufacture of semiconductor device |
NL8220051A (nl) * | 1981-02-04 | 1983-01-03 | Western Electric Co | Werkwijze voor het vormen van een monokristallijn halfgeleidergebied op een isolatiefilm. |
US4681773A (en) * | 1981-03-27 | 1987-07-21 | American Telephone And Telegraph Company At&T Bell Laboratories | Apparatus for simultaneous molecular beam deposition on a plurality of substrates |
US5134090A (en) * | 1982-06-18 | 1992-07-28 | At&T Bell Laboratories | Method of fabricating patterned epitaxial silicon films utilizing molecular beam epitaxy |
US4462847A (en) * | 1982-06-21 | 1984-07-31 | Texas Instruments Incorporated | Fabrication of dielectrically isolated microelectronic semiconductor circuits utilizing selective growth by low pressure vapor deposition |
US4477308A (en) * | 1982-09-30 | 1984-10-16 | At&T Bell Laboratories | Heteroepitaxy of multiconstituent material by means of a _template layer |
US4837175A (en) * | 1983-02-15 | 1989-06-06 | Eaton Corporation | Making a buried channel FET with lateral growth over amorphous region |
US4833095A (en) * | 1985-02-19 | 1989-05-23 | Eaton Corporation | Method for buried channel field effect transistor for microwave and millimeter frequencies utilizing ion implantation |
US4601096A (en) * | 1983-02-15 | 1986-07-22 | Eaton Corporation | Method for fabricating buried channel field effect transistor for microwave and millimeter frequencies utilizing molecular beam epitaxy |
US4555301A (en) * | 1983-06-20 | 1985-11-26 | At&T Bell Laboratories | Formation of heterostructures by pulsed melting of precursor material |
US4761300A (en) * | 1983-06-29 | 1988-08-02 | Stauffer Chemical Company | Method of vacuum depostion of pnictide films on a substrate using a pnictide bubbler and a sputterer |
US4622093A (en) * | 1983-07-27 | 1986-11-11 | At&T Bell Laboratories | Method of selective area epitaxial growth using ion beams |
US4855013A (en) * | 1984-08-13 | 1989-08-08 | Agency Of Industrial Science And Technology | Method for controlling the thickness of a thin crystal film |
US4724220A (en) * | 1985-02-19 | 1988-02-09 | Eaton Corporation | Method for fabricating buried channel field-effect transistor for microwave and millimeter frequencies |
US4935789A (en) * | 1985-02-19 | 1990-06-19 | Eaton Corporation | Buried channel FET with lateral growth over amorphous region |
EP0208795A1 (fr) * | 1985-07-12 | 1987-01-21 | International Business Machines Corporation | Méthode de fabrication d'un transistor à effet de champ auto-aligné ayant un contact métal semi-conducteur |
DE3605793A1 (de) * | 1986-02-22 | 1987-08-27 | Philips Patentverwaltung | Verfahren zur herstellung von strukturierten epitaxialen schichten auf einem substrat |
DE3704378A1 (de) * | 1986-05-21 | 1987-11-26 | Philips Patentverwaltung | Verfahren zur herstellung eines optischen streifenwellenleiters fuer nicht-reziproke optische bauelemente |
JPS6325057U (fr) * | 1986-08-03 | 1988-02-18 | ||
JP2743377B2 (ja) * | 1987-05-20 | 1998-04-22 | 日本電気株式会社 | 半導体薄膜の製造方法 |
JPH05291140A (ja) * | 1992-04-09 | 1993-11-05 | Fujitsu Ltd | 化合物半導体薄膜の成長方法 |
US6265322B1 (en) * | 1999-09-21 | 2001-07-24 | Agere Systems Guardian Corp. | Selective growth process for group III-nitride-based semiconductors |
US6406981B1 (en) * | 2000-06-30 | 2002-06-18 | Intel Corporation | Method for the manufacture of semiconductor devices and circuits |
US6743697B2 (en) | 2000-06-30 | 2004-06-01 | Intel Corporation | Thin silicon circuits and method for making the same |
US8261690B2 (en) * | 2006-07-14 | 2012-09-11 | Georgia Tech Research Corporation | In-situ flux measurement devices, methods, and systems |
US11515397B2 (en) * | 2020-07-21 | 2022-11-29 | Globalfoundries U.S. Inc. | III-V compound semiconductor layer stacks with electrical isolation provided by a trap-rich layer |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3476593A (en) * | 1967-01-24 | 1969-11-04 | Fairchild Camera Instr Co | Method of forming gallium arsenide films by vacuum deposition techniques |
US3574007A (en) * | 1967-07-19 | 1971-04-06 | Frances Hugle | Method of manufacturing improved mis transistor arrays |
US3617822A (en) * | 1967-12-05 | 1971-11-02 | Sony Corp | Semiconductor integrated circuit |
FR1593881A (fr) * | 1967-12-12 | 1970-06-01 | ||
US3615931A (en) * | 1968-12-27 | 1971-10-26 | Bell Telephone Labor Inc | Technique for growth of epitaxial compound semiconductor films |
BE754400A (fr) * | 1969-08-08 | 1971-01-18 | Western Electric Co | Procede de depot de minces pellicules de phosphure de gallium |
US3666553A (en) * | 1970-05-08 | 1972-05-30 | Bell Telephone Labor Inc | Method of growing compound semiconductor films on an amorphous substrate |
US3698947A (en) * | 1970-11-02 | 1972-10-17 | Ibm | Process for forming monocrystalline and poly |
JPS513632B2 (fr) * | 1971-10-26 | 1976-02-04 | ||
US3762945A (en) * | 1972-05-01 | 1973-10-02 | Bell Telephone Labor Inc | Technique for the fabrication of a millimeter wave beam lead schottkybarrier device |
US3865625A (en) * | 1972-10-13 | 1975-02-11 | Bell Telephone Labor Inc | Molecular beam epitaxy shadowing technique for fabricating dielectric optical waveguides |
-
1974
- 1974-08-28 US US501154A patent/US3928092A/en not_active Expired - Lifetime
-
1975
- 1975-05-16 CA CA227,245A patent/CA1031471A/fr not_active Expired
- 1975-08-26 IT IT7526575A patent/IT1042046B/it active
- 1975-08-27 GB GB35290/75A patent/GB1526416A/en not_active Expired
- 1975-08-27 FR FR7526412A patent/FR2283550A1/fr active Granted
- 1975-08-27 GB GB8748/78A patent/GB1526417A/en not_active Expired
- 1975-08-27 NL NL7510130A patent/NL7510130A/xx active Search and Examination
- 1975-08-28 JP JP50103548A patent/JPS6024579B2/ja not_active Expired
- 1975-08-28 DE DE2538325A patent/DE2538325C2/de not_active Expired
Also Published As
Publication number | Publication date |
---|---|
DE2538325C2 (de) | 1984-09-06 |
FR2283550A1 (fr) | 1976-03-26 |
DE2538325A1 (de) | 1976-03-11 |
CA1031471A (fr) | 1978-05-16 |
GB1526417A (en) | 1978-09-27 |
JPS6024579B2 (ja) | 1985-06-13 |
NL7510130A (nl) | 1976-03-02 |
GB1526416A (en) | 1978-09-27 |
US3928092A (en) | 1975-12-23 |
IT1042046B (it) | 1980-01-30 |
JPS5149678A (fr) | 1976-04-30 |
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