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Radiotechnique Compelec RTC SA
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Radiotechnique Compelec RTC SA
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Application filed by Radiotechnique Compelec RTC SAfiledCriticalRadiotechnique Compelec RTC SA
Priority to FR7420558ApriorityCriticalpatent/FR2274351A1/fr
Publication of FR2274351A1publicationCriticalpatent/FR2274351A1/fr
Application grantedgrantedCritical
Publication of FR2274351B1publicationCriticalpatent/FR2274351B1/fr
C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
C30B11/14—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method characterised by the seed, e.g. its crystallographic orientation
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Chemical & Material Sciences
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Engineering & Computer Science
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Crystallography & Structural Chemistry
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Materials Engineering
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Metallurgy
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Organic Chemistry
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Primary Cells
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FR7420558A1974-06-131974-06-13Procede de fabrication de plaquettes de materiau cristallin semi-conducteur
GrantedFR2274351A1
(fr)