FR2256511A1 - Non-volatile memory cell - has floating gate conductor layer between isolation layers - Google Patents

Non-volatile memory cell - has floating gate conductor layer between isolation layers

Info

Publication number
FR2256511A1
FR2256511A1 FR7400070A FR7400070A FR2256511A1 FR 2256511 A1 FR2256511 A1 FR 2256511A1 FR 7400070 A FR7400070 A FR 7400070A FR 7400070 A FR7400070 A FR 7400070A FR 2256511 A1 FR2256511 A1 FR 2256511A1
Authority
FR
France
Prior art keywords
floating gate
gate conductor
conductor layer
pockets
memory cell
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7400070A
Other languages
English (en)
French (fr)
Other versions
FR2256511B1 (enrdf_load_stackoverflow
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Texas Industries Inc
Original Assignee
Texas Industries Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Texas Industries Inc filed Critical Texas Industries Inc
Priority to FR7400070A priority Critical patent/FR2256511A1/fr
Publication of FR2256511A1 publication Critical patent/FR2256511A1/fr
Application granted granted Critical
Publication of FR2256511B1 publication Critical patent/FR2256511B1/fr
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0466—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells with charge storage in an insulating layer, e.g. metal-nitride-oxide-silicon [MNOS], silicon-oxide-nitride-oxide-silicon [SONOS]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/68—Floating-gate IGFETs
    • H10D30/681—Floating-gate IGFETs having only two programming levels
    • H10D30/684—Floating-gate IGFETs having only two programming levels programmed by hot carrier injection
    • H10D30/686—Floating-gate IGFETs having only two programming levels programmed by hot carrier injection using hot carriers produced by avalanche breakdown of PN junctions, e.g. floating gate avalanche injection MOS [FAMOS]

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Non-Volatile Memory (AREA)
  • Semiconductor Memories (AREA)
FR7400070A 1974-01-02 1974-01-02 Non-volatile memory cell - has floating gate conductor layer between isolation layers Granted FR2256511A1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
FR7400070A FR2256511A1 (en) 1974-01-02 1974-01-02 Non-volatile memory cell - has floating gate conductor layer between isolation layers

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR7400070A FR2256511A1 (en) 1974-01-02 1974-01-02 Non-volatile memory cell - has floating gate conductor layer between isolation layers

Publications (2)

Publication Number Publication Date
FR2256511A1 true FR2256511A1 (en) 1975-07-25
FR2256511B1 FR2256511B1 (enrdf_load_stackoverflow) 1977-09-09

Family

ID=9133036

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7400070A Granted FR2256511A1 (en) 1974-01-02 1974-01-02 Non-volatile memory cell - has floating gate conductor layer between isolation layers

Country Status (1)

Country Link
FR (1) FR2256511A1 (enrdf_load_stackoverflow)

Also Published As

Publication number Publication date
FR2256511B1 (enrdf_load_stackoverflow) 1977-09-09

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Legal Events

Date Code Title Description
ST Notification of lapse