FR2251369B1 - - Google Patents

Info

Publication number
FR2251369B1
FR2251369B1 FR7340670A FR7340670A FR2251369B1 FR 2251369 B1 FR2251369 B1 FR 2251369B1 FR 7340670 A FR7340670 A FR 7340670A FR 7340670 A FR7340670 A FR 7340670A FR 2251369 B1 FR2251369 B1 FR 2251369B1
Authority
FR
France
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR7340670A
Other versions
FR2251369A1 (fr
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Radiotechnique Compelec RTC SA
Original Assignee
Radiotechnique Compelec RTC SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Radiotechnique Compelec RTC SA filed Critical Radiotechnique Compelec RTC SA
Priority to FR7340670A priority Critical patent/FR2251369B1/fr
Priority to DE2452197A priority patent/DE2452197C3/de
Priority to IT29353/74A priority patent/IT1025632B/it
Priority to GB48965/74A priority patent/GB1482016A/en
Priority to JP13009974A priority patent/JPS5420314B2/ja
Priority to US05/524,315 priority patent/US3972753A/en
Publication of FR2251369A1 publication Critical patent/FR2251369A1/fr
Application granted granted Critical
Publication of FR2251369B1 publication Critical patent/FR2251369B1/fr
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B19/00—Liquid-phase epitaxial-layer growth
    • C30B19/10—Controlling or regulating
    • C30B19/106—Controlling or regulating adding crystallising material or reactants forming it in situ to the liquid
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/02543—Phosphides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/0257—Doping during depositing
    • H01L21/02573—Conductivity type
    • H01L21/02576—N-type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/0257—Doping during depositing
    • H01L21/02573—Conductivity type
    • H01L21/02579—P-type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/0257—Doping during depositing
    • H01L21/02573—Conductivity type
    • H01L21/02581—Transition metal or rare earth elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02623—Liquid deposition
    • H01L21/02625—Liquid deposition using melted materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02623—Liquid deposition
    • H01L21/02628—Liquid deposition using solutions
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/914—Doping
    • Y10S438/925—Fluid growth doping control, e.g. delta doping
FR7340670A 1973-11-15 1973-11-15 Expired FR2251369B1 (fr)

Priority Applications (6)

Application Number Priority Date Filing Date Title
FR7340670A FR2251369B1 (fr) 1973-11-15 1973-11-15
DE2452197A DE2452197C3 (de) 1973-11-15 1974-11-04 Verfahren zum Abscheiden von unterschiedlich dotierten Halbleiterschichten auf einem Halbleitersubstrat
IT29353/74A IT1025632B (it) 1973-11-15 1974-11-12 Metodo di accrescimento epitassiale da fase liquida
GB48965/74A GB1482016A (en) 1973-11-15 1974-11-12 Epitaxial deposition of semiconductor material
JP13009974A JPS5420314B2 (fr) 1973-11-15 1974-11-13
US05/524,315 US3972753A (en) 1973-11-15 1974-11-15 Method for the epitaxial growth from the liquid phase

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR7340670A FR2251369B1 (fr) 1973-11-15 1973-11-15

Publications (2)

Publication Number Publication Date
FR2251369A1 FR2251369A1 (fr) 1975-06-13
FR2251369B1 true FR2251369B1 (fr) 1978-02-10

Family

ID=9127790

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7340670A Expired FR2251369B1 (fr) 1973-11-15 1973-11-15

Country Status (6)

Country Link
US (1) US3972753A (fr)
JP (1) JPS5420314B2 (fr)
DE (1) DE2452197C3 (fr)
FR (1) FR2251369B1 (fr)
GB (1) GB1482016A (fr)
IT (1) IT1025632B (fr)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CA1140032A (fr) * 1978-03-07 1983-01-25 Marc M. Faktor Epitaxie de composes semiconducteurs
US4214550A (en) * 1979-05-21 1980-07-29 Rca Corporation Apparatus for the deposition of a material from a liquid phase
JPS645965Y2 (fr) * 1981-05-18 1989-02-15
US5264190A (en) * 1990-04-19 1993-11-23 Mitsubishi Denki Kabushiki Kaisha Liquid phase epitaxial film growth apparatus
JPH042689A (ja) * 1990-04-19 1992-01-07 Mitsubishi Electric Corp ヘテロエピタキシャル液相成長方法
US6328051B1 (en) * 2000-06-28 2001-12-11 Mks Instruments, Inc. Dual pendulum valve assembly

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3036898A (en) * 1959-04-30 1962-05-29 Ibm Semiconductor zone refining and crystal growth
US3585087A (en) * 1967-11-22 1971-06-15 Ibm Method of preparing green-emitting gallium phosphide diodes by epitaxial solution growth
US3689330A (en) * 1969-04-18 1972-09-05 Sony Corp Method of making a luminescent diode
US3677836A (en) * 1969-09-23 1972-07-18 Ibm Liquid epitaxy method of fabricating controlled band gap gaal as electroluminescent devices
FR2151171A5 (en) * 1971-08-23 1973-04-13 Radiotechnique Compelec Epitaxial gallium aluminium arsenide layer - from liquid phase soln of aluminium arsenide in gallium
US3870575A (en) * 1972-03-21 1975-03-11 Sony Corp Fabricating a gallium phosphide device
JPS5342230B2 (fr) * 1972-10-19 1978-11-09

Also Published As

Publication number Publication date
GB1482016A (en) 1977-08-03
JPS5420314B2 (fr) 1979-07-21
US3972753A (en) 1976-08-03
DE2452197C3 (de) 1982-03-25
JPS5081676A (fr) 1975-07-02
DE2452197B2 (de) 1981-06-19
FR2251369A1 (fr) 1975-06-13
IT1025632B (it) 1978-08-30
DE2452197A1 (de) 1975-05-22

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Legal Events

Date Code Title Description
CA Change of address
CD Change of name or company name
ST Notification of lapse