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Siemens AG
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Siemens AG
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Publication date
Application filed by Siemens AGfiledCriticalSiemens AG
Publication of FR2244231A1publicationCriticalpatent/FR2244231A1/fr
Application grantedgrantedCritical
Publication of FR2244231B3publicationCriticalpatent/FR2244231B3/fr
G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
G11C16/0466—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells with charge storage in an insulating layer, e.g. metal-nitride-oxide-silicon [MNOS], silicon-oxide-nitride-oxide-silicon [SONOS]
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Engineering & Computer Science
(AREA)
Microelectronics & Electronic Packaging
(AREA)
Read Only Memory
(AREA)
Non-Volatile Memory
(AREA)
Semiconductor Memories
(AREA)
FR7333238A1972-09-181973-09-17Thin layer MOS memory device - has address decoder on insulating substrate connected to transistor array
GrantedFR2244231A1
(en)