FR2202347A1 - - Google Patents

Info

Publication number
FR2202347A1
FR2202347A1 FR7335434A FR7335434A FR2202347A1 FR 2202347 A1 FR2202347 A1 FR 2202347A1 FR 7335434 A FR7335434 A FR 7335434A FR 7335434 A FR7335434 A FR 7335434A FR 2202347 A1 FR2202347 A1 FR 2202347A1
Authority
FR
France
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7335434A
Other languages
French (fr)
Other versions
FR2202347B1 (enrdf_load_stackoverflow
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Philips Gloeilampenfabrieken NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from NL7213623A external-priority patent/NL7213623A/xx
Priority claimed from NL7305806A external-priority patent/NL7305806A/xx
Priority claimed from NL7312423A external-priority patent/NL7312423A/xx
Application filed by Philips Gloeilampenfabrieken NV filed Critical Philips Gloeilampenfabrieken NV
Publication of FR2202347A1 publication Critical patent/FR2202347A1/fr
Application granted granted Critical
Publication of FR2202347B1 publication Critical patent/FR2202347B1/fr
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F10/00—Thin magnetic films, e.g. of one-domain structure
    • H01F10/08—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers
    • H01F10/10—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers characterised by the composition
    • H01F10/18—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers characterised by the composition being compounds
    • H01F10/20—Ferrites
    • H01F10/24—Garnets
    • H01F10/245—Modifications for enhancing interaction with electromagnetic wave energy
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/01—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics
    • C04B35/26—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on ferrites
    • C04B35/2675—Other ferrites containing rare earth metals, e.g. rare earth ferrite garnets
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B19/00—Liquid-phase epitaxial-layer growth
    • C30B19/02—Liquid-phase epitaxial-layer growth using molten solvents, e.g. flux
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/16—Oxides
    • C30B29/22—Complex oxides
    • C30B29/28—Complex oxides with formula A3Me5O12 wherein A is a rare earth metal and Me is Fe, Ga, Sc, Cr, Co or Al, e.g. garnets
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/0009—Materials therefor
    • G02F1/0036—Magneto-optical materials

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Ceramic Engineering (AREA)
  • Metallurgy (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Nonlinear Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Structural Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Electromagnetism (AREA)
  • Power Engineering (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Thin Magnetic Films (AREA)
FR7335434A 1972-10-07 1973-10-04 Expired FR2202347B1 (enrdf_load_stackoverflow)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
NL7213623A NL7213623A (en) 1972-10-07 1972-10-07 Magneto-optical rare earth metal-iron garnet - produced as thin epitaxial layer with addn of bismuth and opt. lead or barium ions
NL7305806A NL7305806A (en) 1973-04-26 1973-04-26 Magneto-optical rare earth metal-iron garnet - produced as thin epitaxial layer with addn of bismuth and opt. lead or barium ions
NL7312423A NL7312423A (en) 1973-09-10 1973-09-10 Magneto-optical rare earth metal-iron garnet - produced as thin epitaxial layer with addn of bismuth and opt. lead or barium ions

Publications (2)

Publication Number Publication Date
FR2202347A1 true FR2202347A1 (enrdf_load_stackoverflow) 1974-05-03
FR2202347B1 FR2202347B1 (enrdf_load_stackoverflow) 1979-06-01

Family

ID=27351816

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7335434A Expired FR2202347B1 (enrdf_load_stackoverflow) 1972-10-07 1973-10-04

Country Status (5)

Country Link
JP (1) JPS545517B2 (enrdf_load_stackoverflow)
CA (1) CA1012868A (enrdf_load_stackoverflow)
DE (1) DE2349348C2 (enrdf_load_stackoverflow)
FR (1) FR2202347B1 (enrdf_load_stackoverflow)
GB (1) GB1439346A (enrdf_load_stackoverflow)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2354809A1 (fr) * 1976-06-16 1978-01-13 Philips Nv Monocristal de grenat de calcium-gallium-germanium, ainsi que substrat forme par un tel monocristal et muni d'une couche a bulles magnetiques formee par voie d'epitaxie
FR2595478A1 (fr) * 1986-03-06 1987-09-11 Philips Nv Element de commutation de lumiere magneto-optique
EP0209755A3 (en) * 1985-06-27 1988-05-04 Nec Corporation Magnetooptic garnet

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5467699A (en) * 1977-11-07 1979-05-31 Fujitsu Ltd Method of producing garnet monocrystal membrane for magnetic bubble element
JPS58139082A (ja) * 1982-02-15 1983-08-18 Hitachi Ltd 磁界測定装置

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3281363A (en) * 1963-07-10 1966-10-25 Bell Telephone Labor Inc Bismuth-containing garnets and their preparation
US3637289A (en) * 1969-03-07 1972-01-25 Bell Telephone Labor Inc Devices based on induced dichroism
US3607390A (en) * 1969-09-29 1971-09-21 Ibm Single crystal ferrimagnetic films
US3654162A (en) * 1970-10-01 1972-04-04 Gte Laboratories Inc Ferrimagnetic iron garnet having large faraday effect
IT951700B (it) * 1970-11-16 1973-07-10 Western Electric Co Dispositivo magnetico utilizzante materiali epitassiali di granato e procedimento per la sua fabbrica zione

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
REVUE US : "IEEE TRANSACTIONS ON MAGNETICS", VOL. MAG 9 1973 , NO 3, PAGES460-463 "LPE FILMS OF BISMUTH-SUBSTITUTED BUBBLE GARNET" : SHIN-ICHI IFO ET AL COMPTE RENDU DE LA CONFERENCE INTERMAG, WASHINGTON, 24-27 AVRIL 1973 ) *

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2354809A1 (fr) * 1976-06-16 1978-01-13 Philips Nv Monocristal de grenat de calcium-gallium-germanium, ainsi que substrat forme par un tel monocristal et muni d'une couche a bulles magnetiques formee par voie d'epitaxie
EP0209755A3 (en) * 1985-06-27 1988-05-04 Nec Corporation Magnetooptic garnet
FR2595478A1 (fr) * 1986-03-06 1987-09-11 Philips Nv Element de commutation de lumiere magneto-optique

Also Published As

Publication number Publication date
GB1439346A (en) 1976-06-16
DE2349348A1 (de) 1974-04-11
JPS4993899A (enrdf_load_stackoverflow) 1974-09-06
FR2202347B1 (enrdf_load_stackoverflow) 1979-06-01
CA1012868A (en) 1977-06-28
DE2349348C2 (de) 1983-02-10
JPS545517B2 (enrdf_load_stackoverflow) 1979-03-17

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Legal Events

Date Code Title Description
ST Notification of lapse