Classifications

• • H—ELECTRICITY
  • H03—ELECTRONIC CIRCUITRY
  • H03F—AMPLIFIERS
  • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
  • H03F3/005—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements using switched capacitors, e.g. dynamic amplifiers; using switched capacitors as resistors in differential amplifiers
• • G—PHYSICS
  • G11—INFORMATION STORAGE
  • G11C—STATIC STORES
  • G11C27/00—Electric analogue stores, e.g. for storing instantaneous values
  • G11C27/04—Shift registers
• • H—ELECTRICITY
  • H03—ELECTRONIC CIRCUITRY
  • H03F—AMPLIFIERS
  • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
  • H03F1/26—Modifications of amplifiers to reduce influence of noise generated by amplifying elements
• • H—ELECTRICITY
  • H03—ELECTRONIC CIRCUITRY
  • H03F—AMPLIFIERS
  • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
  • H03F3/04—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements with semiconductor devices only
  • H03F3/16—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements with semiconductor devices only with field-effect devices
• • H—ELECTRICITY
  • H03—ELECTRONIC CIRCUITRY
  • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
  • H03H15/00—Transversal filters
  • H03H15/02—Transversal filters using analogue shift registers
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
  • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
  • H10D84/891—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D44/00, e.g. integration of charge-coupled devices [CCD] or charge injection devices [CID
  • H10D84/895—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D44/00, e.g. integration of charge-coupled devices [CCD] or charge injection devices [CID comprising bucket-brigade charge-coupled devices

Landscapes

• Engineering & Computer Science (AREA)
• Power Engineering (AREA)
• Amplifiers (AREA)
• Networks Using Active Elements (AREA)
• Manipulation Of Pulses (AREA)
• Transforming Light Signals Into Electric Signals (AREA)

Applications Claiming Priority (1)

Publications (2)

Family

ID=10432625

Family Applications (1)

Country Status (7)

Families Citing this family (11)

Family Cites Families (5)

• 1972
  • 1972-09-25 GB GB4429372A patent/GB1436110A/en not_active Expired
• 1973
  • 1973-08-31 US US393555A patent/US3867645A/en not_active Expired - Lifetime
  • 1973-09-18 CA CA181,308A patent/CA984055A/en not_active Expired
  • 1973-09-18 NL NL7312812A patent/NL7312812A/xx not_active Application Discontinuation
  • 1973-09-25 JP JP48108341A patent/JPS5245630B2/ja not_active Expired
  • 1973-09-25 FR FR7334365A patent/FR2200684B1/fr not_active Expired
  • 1973-09-25 DE DE19732348245 patent/DE2348245A1/de active Pending

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