FR2172769A1 - Semiconductor doping - in enclosed vessel with source of impurities and porous inner plug - Google Patents
Semiconductor doping - in enclosed vessel with source of impurities and porous inner plugInfo
- Publication number
- FR2172769A1 FR2172769A1 FR7205759A FR7205759A FR2172769A1 FR 2172769 A1 FR2172769 A1 FR 2172769A1 FR 7205759 A FR7205759 A FR 7205759A FR 7205759 A FR7205759 A FR 7205759A FR 2172769 A1 FR2172769 A1 FR 2172769A1
- Authority
- FR
- France
- Prior art keywords
- source
- impurities
- inner plug
- porous inner
- plug
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
- C30B31/06—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion material in the gaseous state
- C30B31/10—Reaction chambers; Selection of materials therefor
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR7205759A FR2172769A1 (en) | 1972-02-21 | 1972-02-21 | Semiconductor doping - in enclosed vessel with source of impurities and porous inner plug |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR7205759A FR2172769A1 (en) | 1972-02-21 | 1972-02-21 | Semiconductor doping - in enclosed vessel with source of impurities and porous inner plug |
Publications (2)
Publication Number | Publication Date |
---|---|
FR2172769A1 true FR2172769A1 (en) | 1973-10-05 |
FR2172769B1 FR2172769B1 (US20020051482A1-20020502-M00012.png) | 1975-03-21 |
Family
ID=9093837
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR7205759A Granted FR2172769A1 (en) | 1972-02-21 | 1972-02-21 | Semiconductor doping - in enclosed vessel with source of impurities and porous inner plug |
Country Status (1)
Country | Link |
---|---|
FR (1) | FR2172769A1 (US20020051482A1-20020502-M00012.png) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2409791A1 (fr) * | 1977-11-25 | 1979-06-22 | Silicium Semiconducteur Ssc | Appareils de dopage par diffusion de tranches semi-conductrices |
-
1972
- 1972-02-21 FR FR7205759A patent/FR2172769A1/fr active Granted
Non-Patent Citations (1)
Title |
---|
NEANT * |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2409791A1 (fr) * | 1977-11-25 | 1979-06-22 | Silicium Semiconducteur Ssc | Appareils de dopage par diffusion de tranches semi-conductrices |
Also Published As
Publication number | Publication date |
---|---|
FR2172769B1 (US20020051482A1-20020502-M00012.png) | 1975-03-21 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
ST | Notification of lapse |