FR2162039A1 - - Google Patents
Info
- Publication number
- FR2162039A1 FR2162039A1 FR7242338A FR7242338A FR2162039A1 FR 2162039 A1 FR2162039 A1 FR 2162039A1 FR 7242338 A FR7242338 A FR 7242338A FR 7242338 A FR7242338 A FR 7242338A FR 2162039 A1 FR2162039 A1 FR 2162039A1
- Authority
- FR
- France
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/02142—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing silicon and at least one metal element, e.g. metal silicate based insulators or metal silicon oxynitrides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/02142—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing silicon and at least one metal element, e.g. metal silicate based insulators or metal silicon oxynitrides
- H01L21/02145—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing silicon and at least one metal element, e.g. metal silicate based insulators or metal silicon oxynitrides the material containing aluminium, e.g. AlSiOx
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Electrodes Of Semiconductors (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB5596071A GB1357210A (en) | 1971-12-02 | 1971-12-02 | Method of manufacturing semiconductor devices |
Publications (2)
Publication Number | Publication Date |
---|---|
FR2162039A1 true FR2162039A1 (en) | 1973-07-13 |
FR2162039B1 FR2162039B1 (en) | 1976-04-23 |
Family
ID=10475341
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR7242338A Expired FR2162039B1 (en) | 1971-12-02 | 1972-11-29 |
Country Status (3)
Country | Link |
---|---|
DE (1) | DE2257216A1 (en) |
FR (1) | FR2162039B1 (en) |
GB (1) | GB1357210A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2325196A1 (en) * | 1975-09-19 | 1977-04-15 | Ibm | SEMICONDUCTOR DEVICE PRESENTING REDUCED SURFACE LEAKAGE CURRENTS AND MANUFACTURING PROCESS |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3360695A (en) * | 1965-08-02 | 1967-12-26 | Sprague Electric Co | Induced region semiconductor device |
FR2033724A5 (en) * | 1969-03-27 | 1970-12-04 | Nal Semiconductor Corp |
-
1971
- 1971-12-02 GB GB5596071A patent/GB1357210A/en not_active Expired
-
1972
- 1972-11-22 DE DE2257216A patent/DE2257216A1/en active Pending
- 1972-11-29 FR FR7242338A patent/FR2162039B1/fr not_active Expired
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3360695A (en) * | 1965-08-02 | 1967-12-26 | Sprague Electric Co | Induced region semiconductor device |
FR2033724A5 (en) * | 1969-03-27 | 1970-12-04 | Nal Semiconductor Corp |
Non-Patent Citations (3)
Title |
---|
*REVUE US "SOLID-STATE ELECTRONICS", VOL. 12, NO. 5, MAI 1969 "ELECTRICAL PROPERTIES OF DIFFUSED ZINC ON SIO2-SI MOS STRUCTURES" CHUN-YEN ET KUEY-YEAU TSAO, PAGES 411-415 * |
OCTOBRE 1970, "FET WITH HIGH THICK-TO-THIN OXYDE THRESHOLD VOLTAGE RATIOS", L.H.KAPLAN ET AL, PAGES 1058-1059 * |
REVUE US "IBM TECHNICAL DISCLOSURE BULLETIN", VOL. 13, NO. 5 * |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2325196A1 (en) * | 1975-09-19 | 1977-04-15 | Ibm | SEMICONDUCTOR DEVICE PRESENTING REDUCED SURFACE LEAKAGE CURRENTS AND MANUFACTURING PROCESS |
Also Published As
Publication number | Publication date |
---|---|
DE2257216A1 (en) | 1973-06-14 |
GB1357210A (en) | 1974-06-19 |
FR2162039B1 (en) | 1976-04-23 |
Similar Documents
Legal Events
Date | Code | Title | Description |
---|---|---|---|
ST | Notification of lapse |