FR1550640A - - Google Patents
Info
- Publication number
- FR1550640A FR1550640A FR1550640DA FR1550640A FR 1550640 A FR1550640 A FR 1550640A FR 1550640D A FR1550640D A FR 1550640DA FR 1550640 A FR1550640 A FR 1550640A
- Authority
- FR
- France
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0684—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape, relative sizes or dispositions of the semiconductor regions or junctions between the regions
- H01L29/0692—Surface layout
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
- H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
- H01L29/0611—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices
- H01L29/0615—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE]
- H01L29/0619—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE] with a supplementary region doped oppositely to or in rectifying contact with the semiconductor containing or contacting region, e.g. guard rings with PN or Schottky junction
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Bipolar Transistors (AREA)
- Thyristors (AREA)
- Semiconductor Integrated Circuits (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB3879/67A GB1140822A (en) | 1967-01-26 | 1967-01-26 | Semi-conductor elements |
Publications (1)
Publication Number | Publication Date |
---|---|
FR1550640A true FR1550640A (US06373033-20020416-M00035.png) | 1968-12-20 |
Family
ID=9766611
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR1550640D Expired FR1550640A (US06373033-20020416-M00035.png) | 1967-01-26 | 1967-12-29 |
Country Status (5)
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2410880A1 (fr) * | 1977-12-05 | 1979-06-29 | Hitachi Ltd | Dispositifs a semi-conducteurs du type lateral |
Families Citing this family (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5631898B2 (US06373033-20020416-M00035.png) * | 1974-01-11 | 1981-07-24 | ||
EP0018487B1 (en) * | 1979-03-22 | 1983-06-29 | Kabushiki Kaisha Toshiba | Semiconductor device and manufacturing method thereof |
DE3012185A1 (de) * | 1980-03-28 | 1981-10-08 | Siemens AG, 1000 Berlin und 8000 München | Feldeffekttransistor |
US5229642A (en) * | 1980-09-01 | 1993-07-20 | Hitachi, Ltd. | Resin molded type semiconductor device having a conductor film |
US5371411A (en) * | 1980-09-01 | 1994-12-06 | Hitachi, Ltd. | Resin molded type semiconductor device having a conductor film |
US5552639A (en) * | 1980-09-01 | 1996-09-03 | Hitachi, Ltd. | Resin molded type semiconductor device having a conductor film |
JPS5745259A (en) * | 1980-09-01 | 1982-03-15 | Hitachi Ltd | Resin sealing type semiconductor device |
JPS57201062A (en) * | 1981-06-05 | 1982-12-09 | Nec Corp | Semiconductor device |
JPS5939066A (ja) * | 1982-08-27 | 1984-03-03 | Hitachi Ltd | 半導体集積回路 |
NL8204105A (nl) * | 1982-10-25 | 1984-05-16 | Philips Nv | Halfgeleiderinrichting. |
GB2165090A (en) * | 1984-09-26 | 1986-04-03 | Philips Electronic Associated | Improving the field distribution in high voltage semiconductor devices |
JP2701502B2 (ja) * | 1990-01-25 | 1998-01-21 | 日産自動車株式会社 | 半導体装置 |
DE19818296C1 (de) * | 1998-04-23 | 1999-08-26 | Siemens Ag | Hochspannungs-Randabschluß für ein Halbleiterbauelement |
EP1138082A1 (en) | 1999-09-16 | 2001-10-04 | Koninklijke Philips Electronics N.V. | Semiconductor device |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE1294558B (de) * | 1961-06-07 | 1969-05-08 | Westinghouse Electric Corp | Hochspannungsgleichrichter und Verfahren zum Herstellen |
BE636317A (US06373033-20020416-M00035.png) * | 1962-08-23 | 1900-01-01 | ||
US3271640A (en) * | 1962-10-11 | 1966-09-06 | Fairchild Camera Instr Co | Semiconductor tetrode |
US3338758A (en) * | 1964-12-31 | 1967-08-29 | Fairchild Camera Instr Co | Surface gradient protected high breakdown junctions |
US3394037A (en) * | 1965-05-28 | 1968-07-23 | Motorola Inc | Method of making a semiconductor device by masking and diffusion |
US3391287A (en) * | 1965-07-30 | 1968-07-02 | Westinghouse Electric Corp | Guard junctions for p-nu junction semiconductor devices |
-
1967
- 1967-01-26 GB GB3879/67A patent/GB1140822A/en not_active Expired
- 1967-12-04 US US687662A patent/US3538398A/en not_active Expired - Lifetime
- 1967-12-29 FR FR1550640D patent/FR1550640A/fr not_active Expired
-
1968
- 1968-01-24 DE DE19681639069 patent/DE1639069A1/de active Pending
- 1968-01-25 NL NL6801128A patent/NL6801128A/xx unknown
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2410880A1 (fr) * | 1977-12-05 | 1979-06-29 | Hitachi Ltd | Dispositifs a semi-conducteurs du type lateral |
Also Published As
Publication number | Publication date |
---|---|
GB1140822A (en) | 1969-01-22 |
US3538398A (en) | 1970-11-03 |
DE1639069A1 (de) | 1970-06-25 |
NL6801128A (US06373033-20020416-M00035.png) | 1968-07-29 |
Similar Documents
Legal Events
Date | Code | Title | Description |
---|---|---|---|
ST | Notification of lapse |