FR1276269A - Field Effect Photosensitive Semiconductor Device - Google Patents

Field Effect Photosensitive Semiconductor Device

Info

Publication number
FR1276269A
FR1276269A FR847016A FR847016A FR1276269A FR 1276269 A FR1276269 A FR 1276269A FR 847016 A FR847016 A FR 847016A FR 847016 A FR847016 A FR 847016A FR 1276269 A FR1276269 A FR 1276269A
Authority
FR
France
Prior art keywords
photosensitive semiconductor
effect photosensitive
effect
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR847016A
Other languages
French (fr)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to US860466A priority Critical patent/US3051840A/en
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Priority to FR847016A priority patent/FR1276269A/en
Application granted granted Critical
Publication of FR1276269A publication Critical patent/FR1276269A/en
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L31/00Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
    • H01L31/101Devices sensitive to infra-red, visible or ultra-violet radiation
    • H01L31/112Devices sensitive to infra-red, visible or ultra-violet radiation characterised by field-effect operation, e.g. junction field-effect phototransistor
    • H01L31/1124Devices with PN homojunction gate
    • H01L31/1126Devices with PN homojunction gate the device being a field-effect phototransistor
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor
FR847016A 1959-12-18 1960-12-15 Field Effect Photosensitive Semiconductor Device Expired FR1276269A (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
US860466A US3051840A (en) 1959-12-18 1959-12-18 Photosensitive field effect unit
FR847016A FR1276269A (en) 1959-12-18 1960-12-15 Field Effect Photosensitive Semiconductor Device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR847016A FR1276269A (en) 1959-12-18 1960-12-15 Field Effect Photosensitive Semiconductor Device

Publications (1)

Publication Number Publication Date
FR1276269A true FR1276269A (en) 1961-11-17

Family

ID=26188575

Family Applications (1)

Application Number Title Priority Date Filing Date
FR847016A Expired FR1276269A (en) 1959-12-18 1960-12-15 Field Effect Photosensitive Semiconductor Device

Country Status (1)

Country Link
FR (1) FR1276269A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1257988B (en) * 1964-07-01 1968-01-04 Philips Nv Photosensitive field effect transistor
DE1280434B (en) * 1962-08-06 1968-10-17 Bendix Corp Photo element for photoelectric position display

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1280434B (en) * 1962-08-06 1968-10-17 Bendix Corp Photo element for photoelectric position display
DE1257988B (en) * 1964-07-01 1968-01-04 Philips Nv Photosensitive field effect transistor

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