FI19992797A - Device for producing thin films - Google Patents

Device for producing thin films

Info

Publication number
FI19992797A
FI19992797A FI19992797A FI19992797A FI19992797A FI 19992797 A FI19992797 A FI 19992797A FI 19992797 A FI19992797 A FI 19992797A FI 19992797 A FI19992797 A FI 19992797A FI 19992797 A FI19992797 A FI 19992797A
Authority
FI
Grant status
Application
Patent type
Prior art keywords
device
thin films
producing thin
producing
films
Prior art date
Application number
FI19992797A
Other languages
Finnish (fi)
Swedish (sv)
Other versions
FI118474B (en )
Inventor
Vaeinoe Kilpi
Original Assignee
Asm Microchemistry Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523Pulsed gas flow or change of composition over time
    • C23C16/45525Atomic layer deposition [ALD]
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523Pulsed gas flow or change of composition over time
    • C23C16/45525Atomic layer deposition [ALD]
    • C23C16/45544Atomic layer deposition [ALD] characterized by the apparatus
    • C23C16/45546Atomic layer deposition [ALD] characterized by the apparatus specially adapted for a substrate stack in the ALD reactor
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL-GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02Epitaxial-layer growth
    • C30B25/14Feed and outlet means for the gases; Modifying the flow of the reactive gases
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S206/00Special receptacle or package
    • Y10S206/832Semiconductor wafer boat
FI19992797A 1999-12-28 1999-12-28 Device for producing thin films FI118474B (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
FI992797 1999-12-28
FI19992797A FI118474B (en) 1999-12-28 1999-12-28 Device for producing thin films

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
FI19992797A FI118474B (en) 1999-12-28 1999-12-28 Device for producing thin films
CA 2329568 CA2329568A1 (en) 1999-12-28 2000-12-22 Apparatus for growing thin films
TW89127893A TW524876B (en) 1999-12-28 2000-12-26 Apparatus for growing thin films
US09749339 US6551406B2 (en) 1999-12-28 2000-12-27 Apparatus for growing thin films
JP2000009189U JP3079231U (en) 1999-12-28 2000-12-27 Apparatus for growing a thin film
US10365926 US6835416B2 (en) 1999-12-28 2003-02-13 Apparatus for growing thin films

Publications (2)

Publication Number Publication Date
FI19992797A true true FI19992797A (en) 2001-06-29
FI118474B true FI118474B (en) 2007-11-30

Family

ID=8555821

Family Applications (1)

Application Number Title Priority Date Filing Date
FI19992797A FI118474B (en) 1999-12-28 1999-12-28 Device for producing thin films

Country Status (4)

Country Link
US (2) US6551406B2 (en)
JP (1) JP3079231U (en)
CA (1) CA2329568A1 (en)
FI (1) FI118474B (en)

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Also Published As

Publication number Publication date Type
US6551406B2 (en) 2003-04-22 grant
CA2329568A1 (en) 2001-06-28 application
US20010014371A1 (en) 2001-08-16 application
FI118474B (en) 2007-11-30 application
US20030140854A1 (en) 2003-07-31 application
FI992797A (en) application
JP3079231U (en) 2001-08-10 application
FI118474B1 (en) grant
US6835416B2 (en) 2004-12-28 grant

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