ES235456A3 - Improvement introduced in the current rectifiers, based on the use of silicon semiconductor elements (Machine-translation by Google Translate, not legally binding) - Google Patents
Improvement introduced in the current rectifiers, based on the use of silicon semiconductor elements (Machine-translation by Google Translate, not legally binding)Info
- Publication number
- ES235456A3 ES235456A3 ES0235456A ES235456A ES235456A3 ES 235456 A3 ES235456 A3 ES 235456A3 ES 0235456 A ES0235456 A ES 0235456A ES 235456 A ES235456 A ES 235456A ES 235456 A3 ES235456 A3 ES 235456A3
- Authority
- ES
- Spain
- Prior art keywords
- silicon
- translation
- machine
- legally binding
- google translate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Landscapes
- Electrodes Of Semiconductors (AREA)
Abstract
"IMPROVEMENT INTRODUCED IN THE CURRENT RECTIFIERS, BASED ON THE USE OF SEMI-CONDUCTIVE ELEMENTS OF SILICON", characterized in that the rectifying elements are constituted by a silicon-aluminum alloy, put in contact with a layer of pure silicon and They are formed by placing a thin layer of silicon between an aluminum sheet and a piece of welding consisting of an alloy with a high melting point, which acts as a support, and subjecting the assembly to a high temperature in an oven, so that it melts the aluminum and an alloy is formed with the silicon layer, which is in contact with it, establishing the silicon-aluminum layer and the unaltered silicon, the semi-conductor element. (Machine-translation by Google Translate, not legally binding)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
ES0235456A ES235456A3 (en) | 1957-05-06 | 1957-05-06 | Improvement introduced in the current rectifiers, based on the use of silicon semiconductor elements (Machine-translation by Google Translate, not legally binding) |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
ES0235456A ES235456A3 (en) | 1957-05-06 | 1957-05-06 | Improvement introduced in the current rectifiers, based on the use of silicon semiconductor elements (Machine-translation by Google Translate, not legally binding) |
Publications (1)
Publication Number | Publication Date |
---|---|
ES235456A3 true ES235456A3 (en) | 1958-02-16 |
Family
ID=34444116
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
ES0235456A Expired ES235456A3 (en) | 1957-05-06 | 1957-05-06 | Improvement introduced in the current rectifiers, based on the use of silicon semiconductor elements (Machine-translation by Google Translate, not legally binding) |
Country Status (1)
Country | Link |
---|---|
ES (1) | ES235456A3 (en) |
-
1957
- 1957-05-06 ES ES0235456A patent/ES235456A3/en not_active Expired
Similar Documents
Publication | Publication Date | Title |
---|---|---|
GB956286A (en) | Inverter circuits | |
GB967263A (en) | A process for use in the production of a semi-conductor device | |
GB1225088A (en) | ||
GB848619A (en) | Improvements in or relating to the fabrication of semiconductor rectifiers | |
GB797304A (en) | Improvements in or relating to the manufacture of semiconductor devices | |
ES235456A3 (en) | Improvement introduced in the current rectifiers, based on the use of silicon semiconductor elements (Machine-translation by Google Translate, not legally binding) | |
GB919947A (en) | Semiconductor device | |
GB818464A (en) | Improvements in or relating to semiconductor devices | |
GB855382A (en) | Method of producing a p-n junction in a crystalline semiconductor | |
GB930352A (en) | Improvements in or relating to semi-conductor arrangements | |
GB971703A (en) | A semiconductor device | |
GB953339A (en) | Semi-conductor component with a p-n junction and cooled by a peltier cell | |
GB789931A (en) | Improvements in devices comprising semi-conductors | |
GB918425A (en) | Voltage sensitive semiconductor capacitor | |
GB984141A (en) | Improvements in or relating to methods of alloying to semiconductor bodies | |
GB851978A (en) | Improvements in or relating to processes for the production of electrodes on semi-conductor bodies | |
GB864121A (en) | Improvements in or relating to semi-conductor devices | |
GB863010A (en) | Improvements in or relating to the production of semi-conductor devices | |
GB916366A (en) | Improvements in and relating to semi-conductor devices | |
ES271622A1 (en) | Semi-conductor device with copper-boron alloyed electrode and method of making the same | |
GB864239A (en) | A process for providing a semi-conductor body with a metal electrode | |
GB1017423A (en) | Improvements in semiconductor devices | |
GB898119A (en) | A process for use in the production of a semi-conductor device | |
GB895239A (en) | A method of making p-n junctions with silicon | |
GB816170A (en) | Improvements relating to the forming of p-n junctions |