ES235456A3 - Improvement introduced in the current rectifiers, based on the use of silicon semiconductor elements (Machine-translation by Google Translate, not legally binding) - Google Patents

Improvement introduced in the current rectifiers, based on the use of silicon semiconductor elements (Machine-translation by Google Translate, not legally binding)

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Publication number
ES235456A3
ES235456A3 ES0235456A ES235456A ES235456A3 ES 235456 A3 ES235456 A3 ES 235456A3 ES 0235456 A ES0235456 A ES 0235456A ES 235456 A ES235456 A ES 235456A ES 235456 A3 ES235456 A3 ES 235456A3
Authority
ES
Spain
Prior art keywords
silicon
translation
machine
legally binding
google translate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
ES0235456A
Other languages
Spanish (es)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Instituto Electroquimico SA
Original Assignee
Instituto Electroquimico SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Instituto Electroquimico SA filed Critical Instituto Electroquimico SA
Priority to ES0235456A priority Critical patent/ES235456A3/en
Publication of ES235456A3 publication Critical patent/ES235456A3/en
Expired legal-status Critical Current

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Abstract

"IMPROVEMENT INTRODUCED IN THE CURRENT RECTIFIERS, BASED ON THE USE OF SEMI-CONDUCTIVE ELEMENTS OF SILICON", characterized in that the rectifying elements are constituted by a silicon-aluminum alloy, put in contact with a layer of pure silicon and They are formed by placing a thin layer of silicon between an aluminum sheet and a piece of welding consisting of an alloy with a high melting point, which acts as a support, and subjecting the assembly to a high temperature in an oven, so that it melts the aluminum and an alloy is formed with the silicon layer, which is in contact with it, establishing the silicon-aluminum layer and the unaltered silicon, the semi-conductor element. (Machine-translation by Google Translate, not legally binding)
ES0235456A 1957-05-06 1957-05-06 Improvement introduced in the current rectifiers, based on the use of silicon semiconductor elements (Machine-translation by Google Translate, not legally binding) Expired ES235456A3 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
ES0235456A ES235456A3 (en) 1957-05-06 1957-05-06 Improvement introduced in the current rectifiers, based on the use of silicon semiconductor elements (Machine-translation by Google Translate, not legally binding)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
ES0235456A ES235456A3 (en) 1957-05-06 1957-05-06 Improvement introduced in the current rectifiers, based on the use of silicon semiconductor elements (Machine-translation by Google Translate, not legally binding)

Publications (1)

Publication Number Publication Date
ES235456A3 true ES235456A3 (en) 1958-02-16

Family

ID=34444116

Family Applications (1)

Application Number Title Priority Date Filing Date
ES0235456A Expired ES235456A3 (en) 1957-05-06 1957-05-06 Improvement introduced in the current rectifiers, based on the use of silicon semiconductor elements (Machine-translation by Google Translate, not legally binding)

Country Status (1)

Country Link
ES (1) ES235456A3 (en)

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