ES2317731B1 - BIDIRECTIONAL, INTELLIGENT AND MODULAR POWER SWITCH. METHOD AND REALIZATION - Google Patents

Abstract

Bidirectional power switch, intelligent and modular. Method and realization.

The present invention constitutes a method of manufacture of a modular and intelligent, bidirectional switch in current and electrical voltage with main application in power sources The most outstanding features of this new device is that it integrates the different power stages, control and protection of the circuits to guarantee the bidirectionality in voltage and current, together with the control circuits and algorithms necessary for a switching Safe and robust Its modularity also allows the user a combination of elected to constitute complex circuits and of extensive practical applications such as matrix converters of power, as well as an easy replacement in case of repair.

Description

Bidirectional power switch, intelligent and modular. Method and realization.

Technical sector

The proposed invention is framed in the field of power electronics . Specifically, the bidirectional switch described in this Invention Report allows matrix converters to be carried out more easily and with greater performance than those obtained with current technological solutions. The presented invention can also be applied in other types of power converters, such as multilevel. Applications of these converters include: uninterruptible power supplies, alternating motor drive circuits (locomotives, cranes, elevators, process industry equipment, underwater propulsion, etc.), wind turbine grid connection systems, drives for aeronautical applications, etc.

State of the art

Power converters are circuits that manage the flow of electrical power between a primary source of energy and a certain load. They can be classified according to the characteristics of the electrical input and output variables (voltage and current levels, frequency, etc.). The two types of converters of greater industrial and economic interest according to this criterion, are the converters of direct voltage to direct voltage (DC-DC) for power supplies (mainly in computers) and the converters of alternating voltage to alternating voltage (AC- AC) for the operation of three-phase motors (variable speed drives) [1]. In practice, the structure of the latter is that of an AC-DC-AC converter, that is, the alternating input voltage (three-phase or single-phase) is rectified to an intermediate continuous voltage (AC-DC) and is obtained from it the alternating output voltage that feeds the load at controllable amplitude and frequency (DC-AC). In contrast to this structure, matrix converters (hereinafter, CM) or matrix converters , are direct power converters between a n-phase AC input network and another m-phase output [2]. The converter has nxm bidirectional switches (hereinafter, IBD) configured so that any of the output phases can be connected to any of the input phases. The basic idea dates from the late 70s of the last century. M. Venturini developed it in the early 80's and since then, the evolution of digital control circuits and power components has allowed the first industrial achievements to be achieved. The power converters are, therefore, current electronic devices and in the process of practical development. The control algorithms are, however, more complex than in conventional AC-DC-AC inverters when dealing with more controllable switches and also in the case of alternating electrical input voltages. Development work, more recently extended, has focused on three-phase-three-phase converters, including nine IBDs.

CMs have a number of advantages over conventional speed drives. Since they do not use a continuous voltage link, they do not need bulky energy storage components (mainly electrolytic capacitor banks), the use of reactive components being limited to small input filters. Therefore, CMs are generally considered to be a compact all-silicon solution. On the other hand, the currents they absorb at the input are sinusoidal (except for the harmonics corresponding to the switching frequency, which can be reduced to acceptable values by filtering). In addition, most control algorithms allow the input power factor to have unit value. The only drawback worth mentioning the CM, is a maximum ratio between amplitudes of output and input voltage of 0.866.

The practical implementation of CM requires the use of voltage and current IBDs, that is, devices capable of supporting both positive and negative blocking voltages and conducting currents in both directions. The most widespread solutions in the technical literature to obtain IBDs are based on the use of traditional IGBT ( Insulated Gate Bipolar Transistor ) devices and traditional FRD ( Fast Recovery Diode ) fast diodes. There are also references where MCTs ( MOS Controlled Thyristors ) are used. There are three basic combinations of such discrete devices to operate an IBD [3]:

?

Bridge Configuration diodes: four FRDs and an IGBT.

?

Common transmitter configuration: two IGBTs and two FRDs.

?

Common Collector Configuration: two IGBTs and two FRDs.

In all three options, the diodes provide the ability to withstand reverse voltage that the IGBT does not have. The diode bridge option is practically not used as the current flows through three devices in series (two FRDs and the IGBT) increasing driving losses. In the other two options the current always circulates through an IGBT and an FRD. Both they have the added advantage that both IGBTs can be controlled of the IBD separately, which gives greater flexibility to implement Different switching strategies. Another simpler solution is that offered by certain devices under development. Be It is basically about IGBTs with voltage blocking capability in inverse or RB-IGBT [4]. The combination of two of these devices in anti-parallel mode allows integrate an IBD in minimal configuration, although its characteristics dynamics are currently inferior to those of the IGBTs standard.

In the CM two basic rules must be met: two input phases cannot connect simultaneously to the same output phase to avoid short circuiting lines input, and all output phases must always be connected to an input phase to avoid open circuits in the loads inductive Since in the CM there are no natural paths of return for current as in conventional converters, the switches must be controlled at all times to ensure safe operation, even during the switching processes of  The power devices. Both IGBTs and FRDs present finite switching times that must be taken in account to avoid short circuits or instantaneous open circuits during commutations. In this sense, there are different current switching strategies between IBDs that allow Avoid these problems. The most widespread are those of 4 or 2 steps [5, 6]. These are algorithms that establish the proper sequence closing and opening of the switches depending on the direction of current and state circulation of the other IBDs. To level practical, given the high number of transistors to control (18 in a three-phase to three-phase CM), switching strategies they consume a relatively high processing time and are usually implement outside of high-level control circuits, in Programmable logic circuits or memories with tables.

The complexity of CM control has delayed its application in the industrial domain, although new products that avoid this difficulty begin to appear. In this sense, Yaskawa has announced the first commercial CM for variable speed drives in mid-2006. On the other hand, many manufacturers of power modules also start to propose products adapted to the construction of CM. We can mention Semikron and Dynex, which offer in their catalog a pair of IGBT modules that include the power stage of an IBD (common emitter configuration), from the Semitop SK80GM063 of 600V-81A of Semikron, to the DIM400PBM17-A of 1700V Dynex -400A. Powerex also offers a range called Common Emitter of this type of modules, with components from 250V-120A to 1200V-80A. APT proposes a wide range of similar modules ( Dual Common Source family) some with MOSFET transistors as a type of controllable switch. On the other hand, Eupec and Semelab have presented IGBT modules that include the entire power stage of a CM (EconoMAC in the case of Eupec). In all the cases mentioned, only the power stages are offered without any control.

[1] A. Lidow , D. Kinzer , G. Sheridan , D. Tam . "The Semiconductor Roadmap for Power Management in the New Millennium." Proceedings of the IEEE , Vol. 89, No. 6, June 2001 , p. 803-812.

[2] PW Wheeler , J. Rodríguez , JC Clare , L. Empringham , A. Weinstein . "Matrix Converters: A Technology Review". IEEE Trans. on Industrial Electronics , Vol. 49, No. 2, April 2002 , p. 276-288.

[3] J. Adamek , W. Hofmann , M. Ziegler . "Fast Commutation Process and Demand of Bidirectional Switches in Matrix Converters". IEEE 39th Annual Conference on Power Electronics Specialists PESC 2003 , Vol. 3, 15-19 June 2003 , p. 1281-1286.

[4] M. Takei , T. Naito , K. Ueno . "The Reverse Blocking IGBT for Matrix Converter With Ultra-Thin Wafer Technology". ISPSD 2003 , 14-17 April 2003 , p. 156-159.

[5] N. Burany . "Safe Control of Four-Quadrant Switches". IEEE Industry Applications Society Annual Meeting , 1-5 October 1989 , p. 1190-1194.

[6] M. Ziegler , W. Hofmann . "Semi Natural Two Steps Commutation Strategy for Matrix Converters". IEEE 29th Annual Conference on Power Electronics Specialists PESC 1998 , Vol. 1, 17-22 May 1998 , p. 727-731.

Description of the invention

The practical realization of a converter Matrix (CM) implies a relatively high number of bidirectional switches (IBD) and, therefore, a number still higher power devices (controlled and uncontrolled). For example, in a three-phase to three-phase CM, 9 IBDs are required. If these are implemented with two IGBTs and two FRDs, 18 are required Devices of both types. The interconnection of such a number elevated components are an arduous, expensive and delicate task, both for the power stage (high voltage values, current, dl / dt) as per the numerous control signals in Noisy environment that is handled. In addition, if components are used discrete, the set with its cooling system included, It can be very bulky. Therefore, any solution that minimizes these problems is of maximum interest to designers of converters Recently power modules have been announced that integrate the power stages of an entire CM (Eupec and Semelab), which compacts the final system. However the deterioration of only one of the module components, disables the totality. On the other hand, the control of the processes of switching of the switches in the CMs is extremely critical and safe switching strategies are necessary, appropriate to the characteristics of the devices used (switching times, etc.).

- Brief description of the invention

The proposed invention aims to facilitate the practical realization of matrix converters, or other types of converters such as multilevel, thanks to modules that provide the function of bidirectional switch in voltage and current in a compact way. These IBDs (bidirectional switches) integrate the control circuits that are responsible for applying the safe current switching strategy, the door control circuits ( drivers ) of the controlled switches (IGBTs or others), the galvanic isolation necessary between the stage control and power, the necessary floating power supplies and protection devices (surge suppressors, etc.). In addition, the modular nature of the proposed IBDs allows them to be easily combined to build a more complex converter, facilitating the interconnection of control and power lines. Another additional advantage of modularity is that it allows an easy repair of the converter and with respect to the modules that make up the entire CM, in case of failure, the damaged IBD can be replaced without having to discard the rest of the operating components. Both the robustness and the modularity of the devices are technical demands of the microelectronic market and are manifested, respectively, by the lengthening of their useful life, the first quality, and by the lowering of manufacturing costs, the second.

- Detailed description of the invention

The high-level control circuits of the CMs determine the closing and opening moments of the IBDs based on relatively complex modulation strategies (Venturini modulation, vector modulation, etc.) to obtain the voltages and currents at the output of the converter desired in the load. These IBD control signals must be treated by the appropriate switching strategy (4 steps, 2 steps, etc.) and thus be able to determine exactly the correct opening and closing sequence of the switches involved in a current switching between IBDs To achieve the objectives pursued in this invention, we propose the method or procedure described by the block diagram of the IBD that appears in Figure 1. The components described in this figure are the following: A, floating power supplies (DC / converters DC), B, circuitry local control, C, insulation circuits, drivers (drivers) door and protection devices D, power stage bidirectional switch, Vcc voltage supply common with the high level control, in , logic control signal (opening and closing) of the bidirectional switch, Isign, logic signal of the current sign. O1 and O2, connection of the opening and closing control signals of the power stage transistors, G1 and G2, connection of the door control signals of the control stage transistors, galvanically isolated from the high control level, T1 and T2, Bidirectional switch power terminals. The interconnection of the different modules or parts, in the review mode, allows different switches to be manufactured according to the user's demands. The control signals of the IBDs, which come from the high-level control circuits, can be sent directly to each of the IBDs where they will be properly processed by the local control circuits. Specifically, in Figure 1 two of these control signals are represented, "In" corresponding to the opening and closing logic signal of the IBD and "Isign" which is the logical signal associated with the sign of the current in the phase of output to which the IBD in question is connected. Obviously, there could be other signals (status of other IBDs, alarm signals, etc.) depending on the additional functions that the modular IBD is endowed in each specific application, although it would also be possible to make the only signal that reaches the IBD it was the corresponding one to its on / off, including in the module itself the circuits responsible for the detection of the direction of the current. The final presence of one or more control signals will be decided based on the independence with which the IBD is to be endowed. Together with the established control signals, the power line of the high level control circuits (Vcc) will also reach the various IBDs of the system, to power the local control circuits and auxiliary floating power supplies. It is important to highlight that in most practical applications it will not be necessary to develop a specific power supply for the modular IBD blocks, but that the same one used for high level control will be used directly; in any case the reference of said power supply is always the same as that of the high control signals
level.

The local control circuits (block B in the Figure 1) are responsible for executing the algorithm corresponding to the chosen switching strategy, determining the two signals of control of the IBD power stage switches (IGBTs,  MOSFETs, etc.) with appropriate delays between them. The elaboration of this switching sequence is based on the sign of phase current and eventually other signals, depending of each particular switching strategy. The algorithms of switching more employees are the so-called 4-step, although the implementation of programmable control circuits allows adopt the most appropriate algorithm for each application. The control Local can be done on a practical level with digital circuits programmable, tables programmed in memories, logic gates, microprocessors, etc., and intends to become independent as far as possible (depending on the applications) to the IBD of the rest of the components at the time of carrying out the commutations In each case they must integrate the necessary auxiliary components into the IBD (quartz crystals, capacitors, etc.) so that this is the most Modular possible. Local control circuits can also incorporate power device protection algorithms, such as overcurrent or temperature exceeding Certain acceptable limits. The proposed method or system allows have an "intelligence" close to the power stage to manage failure situations, or abnormal circumstances, optimally, also sending alarm signals to the high level control so that it acts accordingly.

The control signals generated by the local control circuits are then led to some galvanic isolation device (optocoupler, pulse transformer, etc.) so that the high level control stage is isolated and protected from the power. The isolated signals are directed to the door control circuits (controllers or drivers ) adapted to each type of switch (IGBT, MOSFET, bipolar transistor, etc.) and from these they are connected to the control terminals (door, base, etc. .). Given their proximity to the power devices, the drivers can also incorporate protections (overcurrent, over temperature, etc.). In any case, specific protection devices are incorporated, such as surge suppressors between gate and emitter of MOS control transistors. All these elements (isolation, drivers and protection) are included in block C of Figure 1.

For the correct functioning of this block, floating power supplies are needed (block A in the Figure 1) that maintain galvanic isolation between the stages of control and power. As depicted in Figure 1, you are sources connect to the power line of the stage of high level control and generate isolated voltages at output necessary for controllers, etc. These floating fountains are based on high density integration DC / DC converters.

Finally, the power stage (block D in Figure 1) implements the function of the bidirectional switch itself. It is done by combining the necessary power devices to adapt to the requirements of voltage, current, switching speed, etc. requested in each application. These devices are connected on suitable substrates such as IMS ( Insulated Metal Substrate ), ceramic DBC ( Direct Bonded Copper ) or others, which allow to handle high voltage and current values as well as dissipate the required power levels. The interconnection and distribution of the different power components is optimized to minimize parasitic inductances (avoiding voltage spikes, thus increasing reliability), to ensure proper thermal management (avoid cross-heating between components, hot spots, etc.) and parasitic electromagnetic radiation.

As can be seen, the proposed IBDs are presented to the converter designer as a module with two power terminals, T1 and T2, one or more control terminals and a power line with the same reference as the signals of control. This module performs the switch function bidirectional in voltage and current between terminals T1 and T2, safely and robustly, depending on the control signals sent. In addition, the details linked to the strategy of Switching are transparent to the user.

The geometry of the IBD has also been designed to allow a modular use of it. Thus, the terminals of power and control are distributed on top and the bottom is left free to dissipate the heat generated by self-heating

Detailed Description of the Figures

Figure 1: Block diagram of the Power Switch bidirectional, intelligent and modular power, showing its Main parts and electrical variables.

Figure 2: Electronic scheme of the example of Smart bidirectional switch performed.

Figure 3: Switch side view intelligent and modular bidirectional, showing its dimensions main and its three levels of achievement.

Figure 4: Top view of an outline of the IMS substrate of the bidirectional switch, showing its main dimensions

Figure 5: Oscillogram showing the evolution of the control signals of the bidirectional switch when the Sign of the current is positive (Isign = 5V).

Figure 6: Oscillogram showing the evolution of the control signals of the bidirectional switch when the Sign of the current is negative (Isign = 0V).

Figure 7: Static voltage characteristic - bidirectional switch current.

Figure 8: Scheme of the test circuit used to demonstrate the joint operation of two switches bidirectional smart.

Figure 9: Oscillogram showing the evolution of the main variables of the bidirectional switches of Figure 8 during a "hard" block of the active IGBT of the IBD-A, with 10A of current and an applied voltage 300V. Gate control signal G1 is displayed as reference.

Figure 10: Oscillogram showing the evolution of the main variables of the bidirectional switches of Figure 8 during a "hard" start-up of the IGBT active of the IBD-A, with 10A of current and a voltage applied from 300 V. The gate control signal G1 is displayed as reference.

Example of embodiment of the invention

Example of realization

Intelligent modular bidirectional switch on substrate Insulated metal base and hybrid integration technology

The block diagram of the modular IBD proposed in Figure 1 has been carried out as shown in Figure 2. The electrical parameters and components in this assembly are: PIC, Microcontroller (local control device), C3, PIC decoupling capacitor, XTL, quartz crystal for the PIC clock, DC / DC, converter to provide the floating supply voltages V_ {CC1} and -V_ {CC2}, V_ {CC1}, driver supply voltage, positive with respect to the reference Ref2, V_ {CC2}, supply voltage of the drivers , negative with respect to reference Ref2, Ref2, reference of the supply voltages V_ {CC1} and V_ {CC2}, Opto1 and Opto2, optocouplers to ensure galvanic isolation between the control and power stages, R1 and R2, resistance limitation of the input current of the optocouplers, Driv1 and Driv2, door control drivers of the power transistors IGBT, C1 and C2, drivers decoupling capacitors D.E.P uerta, Rg1 and Rg2, door resistors of the IGBT, Dz1 and Dz2 power transistors, transient voltage surge suppressors between the IGBTs and emitter of the IGBTs, S1 and S2, IGBT, D1 and D2 power transistors, Power diodes fast recovery (FRD), Vcc, common supply voltage with high level control, Ref1, reference of the supply voltage Vcc, In, control logic signal (opening and closing) of the bidirectional switch, Isign, logic signal of the current sign, O1 and O2: opening and closing control signals of the power stage transistors, G1 and G2, door control signals of the control stage transistors, galvanically isolated from the high level control , T1 and T2, bidirectional switch power terminals. The objective of this prototype has been to demonstrate the feasibility and advantages of the invention. As a general design criterion an attempt has been made to make the system as compact as possible, based on hybrid mounting technology, combining SMD components and chips with wire-bonding . The basic structure of the IBD has been divided into three levels: a PCB ( Printed Circuit Board ) with control, isolation and controller circuits (PCB1), a second PCB board where the floating power supply (PCB2) is located, and finally an IMS ( Insulated Metal Substrate ) substrate with the power stage and protection devices. Figure 3 shows a diagram of the manufactured modular IBD, seen in profile, with its most representative dimensions and the arrangement of the three levels mentioned. Thus, PCB1 is the printed circuit with the PIC, the door controllers ( drivers ) and the optocouplers, also, PCB2 is the printed circuit with the DC / DC converter of the floating voltage sources. IMS is the metal base substrate insulated with the power stage, protection devices and door resistors. As can be seen, terminals T1 and T2 are welded to the corresponding tracks of the IMS and cross the PCB1 and PCB2 boards to allow the upper connection of the power lines. In the final versions of the IBDs, the control signals would start from the PCB boards also towards the top, away from T1 and T2. This configuration allows an easy connection of the IBD on a PCB board at the top that would contain the layout of the converter, while below, the base of the IMS substrates of all IBDs would be screwed to a radiator or cooling system. In the prototypes carried out so far, the control signals and the Vcc power supply are directly wired on the corresponding PCB board. In the final versions, all components and circuits will also be protected with the appropriate encapsulants (epoxy or others).

On the other hand, Figure 4 shows a diagram with the top view of the power stage on the IMS substrate. It has two 3 mm diameter holes to allow the module to be fixed on a radiator. Electrically, the power stage is based on the combination of 2 IGBTs (Ixys IXGD 24N60A) and 2 FRDs (Ixys DWEP 25-06), all of them of 600 V breaking voltage and in chip format, welded on the copper tracks of the IMS substrate. The upper connections (door and emitter of the IGBT and anode of the FRD) have been made with 127 mm diameter aluminum wire ( wire-bonding ). The configuration of the IGBTs is in common emitter (as can be seen in Figures 2 and 4), which simplifies the connections with the PCB1 (which contains the door controllers) and also reduces the number of floating power supplies for Apply voltages between negative gate and emitter. In the power stage, two surge suppressors (TransZorb SMBJ24CA from General Semiconductor) have also been placed between door and emitter (Dz1 and Dz2 in Figure 2), plus the two door resistors of the IGBTs (Rg1 and Rg2), all them in SMD format. Finally, the 2 power terminals (T1 and T2) and the 4 signal terminals that allow the interconnection with PCB1, in particular of the output voltages of the controllers to the door and the emitter of each IGBT, have been soldered. It should be noted that a connection from the transmitter of each IGBT to the controller ( driver ) has been enabled, separated from the path of the main current of the device, which reduces the danger of unwanted peaks in the door voltage.

Local control in this specific case was carried out by a PIC microcontroller (Microchip PIC12F675) mounted on PCB1. For the development of IBD prototypes, this component has been used in DIL-8 through hole encapsulation, although the final versions will have an SMD package. In the aforementioned prototypes, the PIC receives the closing and opening control signal of the IBD (In), as well as the signal representative of the module current sign (Isign) from the high level control, both between 0 and 5 V A 20 MHz quartz oscillator, necessary for operating the internal clock at a sufficiently high frequency, has also been mounted next to the PIC. The program introduced in the microcontroller executes a 4-step switching strategy that only requires the two signals mentioned above. Two PIC output pins are used for the activation signals of the IGBTs doors (O1 and O2). The delays between these signals are determined and programmed in the PIC based on the type of power device used and in particular, on their switching times. The O1 and O2 signals are sent to the isolation devices. In the case at hand, a component (Agilent HCPL-J312) has been used that combines an optocoupler and a door controller for IGBTs and MOSFETs. Thus, resistors R1 and R2 set the input current to the optocoupler diodes, while decoupling capacitors C1 and C2 stabilize the supply voltages when the current peaks necessary to load and unload the input capacities of the IGBTs. At the output of both controllers, we find the G1 and G2 signals that are connected to the IGBTs doors through resistors Rg1 and Rg2. These resistors are of great importance as they determine the switching speed of the transistors and as mentioned above, they have been placed on the IMS substrate in SMD format. Figures 5 and 6 show the oscillograms that demonstrate the basic operation of the programmed switching strategy. In Figure 5, the sign of the current is positive (Isign = 5V) and it can be seen that at the moment when the In signal passes from 0 to 5 V (closing of the bidirectional switch), the switching strategy programmed in the PIC causes the IGBT door-emitter voltage S1 (V_ {GE (S1)}) to go from -15 V to +15 V 3 \ mus later, while that of S2 (V_ {GE (S2)}) does 6 \ mus later. On the other hand, when the In signal goes from 5 V to 0 (bidirectional switch opening), the switching strategy programmed in the PIC causes the door-emitter voltage of the IGBT S2 (V_ {GE (S2)}) to pass from +15 V to -15 V 2 \ mus later, while that of S1 (V_ {GE (S1)}) does 5 \ mus later. When the sign of the current is negative (Isign = 0V), the roles of S1 and S2 are reversed, as can be seen in Figure 6.

On the PCB2 board, the floating power supplies that power the drivers have been accommodated . Several types of sources have been experienced, although all of them are based on high density integration DC / DC converters (for example Traco TDS0515D). The choice of the power stage of the IBD in a common emitter configuration allows a common reference to the transistor control circuits (Ref2). Thus, with a converter that provides two output voltages (Vcc1 and -Vcc2), positive and negative voltages can be applied between the door and emitter of both IGBTs, connecting the power supply lines of the drivers as shown in Figure 2. In our case, Vcc1 = 15 V and -Vcc2 = -15 V, both voltages referenced to Ref2. It can also be observed how the DC / DC converter must guarantee galvanic isolation between the power supply of the high-level control stage (Vcc with reference Ref1) and the driver supply voltages. The decoupling capacitors of both the Vcc and Vcc1 and -Vcc2 power supplies have also been mounted on the PCB2 board.

To verify the correct electrical operation of the proposed modular IBD, static and dynamic tests have been carried out. Figure 7 shows the static characteristic current curves of the IBD against the voltage drop of it at 25 ° C. When the control signal In is activated (In = 5V), the IBD allows the passage of current in both directions and the voltage drop in its terminals corresponds to the sum of the drop of the IGBT plus that of the active FRD. With the devices that have been used in the presented prototype, the voltage drop reaches 3.8 V at 20A. When In = 0V, the IGBTs are cut off, the IBD does not circulate current in any direction and the voltage applied to it is supported by the FRDs, until its breaking voltage is reached. On a dynamic level, IBDs operating on a CM with inductive load (the most usual case at practical level) present only two different types of switching from the point of view of the behavior of power devices. Whatever the number of input and output phases, these two types of switching can be reproduced in a CM with two input and one output phases, with two IBDs in total, as shown in Figure 8. Here, V represents the applied external voltage, L_ {L} the Load Inductance. In turn, V_ {IBD-A}, V_ {IBD-B}, I_ {IBD-A} and I_ {IBD-B} are, respectively, the voltage drop of switches IBD-A and IBD-B, the currents through the switches IBD-A and IBD-B. A test circuit has been carried out under these conditions and Figures 9 and 10 show the oscillations of the main variables during switching processes at 10A of current and 300 V of voltage at terminals of the IBDs. In both figures the control signal G1 is shown as a reference to the output of the driver that controls the active IGBT of the IBD-A. In Figure 9 there is a " hard turn-off " block of the active IGBT of the IBD studied (the IBD-A). The extinction of the current of the IBD-A (I_ {IBD-A}) in about 100 ns can be seen while that of the IBD-B (I_ {IBD-B}) takes over and evolves from 0 to 10A. The voltage drop of the IBD-A (V_ {IBD-A}) goes from the conduction value (about 3 V) to 300 V when the bidirectional switch is blocked, with a small overlap due to parasitic inductances. Figure 10 shows a hard turn-on process of the active IGBT of the IBD-A that completes the verification process. The increase in the current of the IBD-A (I_ {IBD-A}) is observed in about 50 ns while that of the IBD-B (I_ {IBD-B}) goes from 10A to 0. An overcurrent peak is also observed due to the dynamic characteristics of the diodes. The voltage drop of the IBD-A (V_ {IBD-A}) evolves from 300 V when initially blocked, to the conduction value (about 3 V). These practical results support the industrial utility of this invention.

Claims (3)

1. Bidirectional power switch both in current, as in electric, intelligent and modular voltage characterized in that it comprises the following parts:

to)

Power supplies floating (DC / DC converters).

b)

Local control circuits

C)

Isolation circuits and controllers (also commonly referred to as "door drivers ").

d)

Protection devices.

and)

Switch power device bidirectional

F)

Electrical connections and terminals, integrated, between parts.

2. Bidirectional power switch both in current and in electric, intelligent and modular voltage according to claim 1, characterized in that:

to)

Integrate the necessary power stage to guarantee bidirectionality in voltage and current together with control and protection circuits and algorithms necessary,

b)

Integrate protection circuits necessary to increase the robustness of the device, before possible operation failures,

C)

Integrate voltage sources Floats needed for proper and autonomous operation of control circuits, as well as galvanic isolation necessary between different stages of control and power,

d)

Have modular character, which allows the operator an easy combination with other similar elements or parts, to make more circuits complexes like matrix converters as well as do possible easy repair of the converters, replacing a module for another.

3. Bidirectional power switch both in current, as in electric, intelligent and modular voltage, according to claims 1 and 2, characterized in that it can be part, or be a constituent element, of power matrix converters, as well as other converter devices of power that manage the power flow between a primary source of energy and a certain electrical load or impedance.