EP4634985A1 - Modular device for addressable light emitting diode arrays - Google Patents

Abstract

According to one or more embodiments, a modular device is provided. The modular device includes light emitting diode elements. The modular device also includes transistors. Each of the light emitting diode elements are electrically coupled to a corresponding transistor of the transistors to provide a vertical integration between that light emitting diode and that corresponding transistor. The light emitting diode elements generate, based on the vertical integration, a light emitting area that covers a device area of the modular device.

Description

MODULAR DEVICE FOR ADDRESSABLE LIGHT EMITTING DIODE ARRAYS

[0001] This invention was made with government support under a contract awarded by the United States Department of Energy. The government has certain rights in the invention.

CROSS REFERENCE TO RELATED APPLICATION(S)

[0002] This application claims the benefit of US Provisional Application 63/433,186, filed on December 16, 2022, which is incorporated by reference as if fully set forth.

BACKGROUND

[0003] Densely-packed addressable light emitting diode (“LED”) arrays can include segmented LEDs or discrete mini-LEDs and can be attractive for creating high-luminance light sources with variable spatial light emission. When combined with directional projection optics, addressability of elements of the densely-packed addressable LED arrays can enable beam shaping or steering functionality. The addressability can also enable color-tunable near-field mixed sources for directional lighting when combined with directional mixing optics and using different colors on the elements, thereby avoiding visible color separation that occurs with designs based on far-field mixing (e.g., showerhead optics).

[0004] Generally, scalable methods for making densely-packed addressable LED arrays of arbitrary sizes and shapes are desirable due to a variety of possible lighting applications and corresponding requirements. However, densely-packed addressable LED arrays (i.e., with discrete LED packages assembled on printed circuit boards (PCBs)) are limited in size by PCB routing limitations and design rules. Conventional solutions, such as mounting segmented LEDs on a submount, can mitigate these PCB routing limitations and design rules. Yet, while sub-mounts can reduce a contact number (i.e., by connecting all anodes or cathodes of the LED elements and/or grouping addressable LED elements together) and can spread contacts over a larger area to facilitate a PCB assembly, utilizing sub-mounts is not easily scalable or adaptable to the variety of possible lighting applications and corresponding requirements because sub-mounts are specifically designed for a given light source specification. SUMMARY

[0005] According to one or more embodiments, a modular device is provided. The modular device includes one or more light emitting diode elements. The modular device also includes one or more transistors. Each of the one or more light emitting diode elements are electrically coupled to a corresponding transistor of the one or more transistors to provide a vertical integration between that light emitting diode and that corresponding transistor. The one or more light emitting diode elements generate, based on the vertical integration, a light emitting area that covers a device area of the modular device.

[0006] According to one or more embodiments, a modular device is provided. The modular device includes a light emitting diode chip comprising one or more light emitting diode elements. The modular device also includes a sub-mount comprising one or more transistors. Each of the one or more light emitting diode elements are electrically coupled to a corresponding transistor of the one or more transistors to provide a vertical integration between that light emitting diode and that corresponding transistor. The light emitting diode chip generates, based on the vertical integration, a light emitting area that covers a device area of the modular device.

[0007] According to one or more embodiments, a method is provided. The method includes vertically integrating a modular device comprising a plurality of transistors and a plurality of light emitting diodes and adding at least one phosphor to the modular device. The method also includes maintaining an addressability of the plurality of light emitting diodes and assembling the modular device into an addressable light emitting diode array using a reflow soldering.

BRIEF DESCRIPTION OF THE DRAWINGS

[0008] A more detailed understanding can be had from the following description, given by way of example in conjunction with the accompanying drawings wherein:

[0009] FIG. 1 shows a method according to one or more embodiments;

[0010] FIG. 2 shows a device according to one or more embodiments;

[0011] FIG. 3 shows a device with a complementary metal-oxide-semiconductor / through- silicon via (CMOS/TSV) silicon sub-mount according to one or more embodiments;

[0012] FIG. 4 shows a device with a low-temperature thin-film transistor (TFT) fabricated on an LED chip according to one or more embodiments;

[0013] FIG. 5 shows a device with a chip-scale package (CSP) according to one or more embodiments; [0014] FIG. 6 shows a device with a segmented phosphor layer according to one or more embodiments;

[0015] FIG. 7 shows a device with a continuous phosphor layer according to one or more embodiments;

[0016] FIG. 8 shows a device with an integration of multiple phosphor layers according to one or more embodiments;

[0017] FIG. 9 shows a device with a phosphor dispensed at a modular device level according to one or more embodiments;

[0018] FIG. 10 shows diagrams of a segmented LED according to one or more embodiments;

[0019] FIG. 11 shows diagrams of addressable light emitting diode arrays according to one or more embodiments;

[0020] FIG. 12 shows a diagram of an addressable light emitting diode array according to one or more embodiments;

[0021] FIG. 13 is a diagram of an example vehicle headlamp system according to one or more embodiments; and

[0022] FIG. 14 is a diagram of another example vehicle headlamp system according to one or more embodiments.

DETAILED DESCRIPTION

[0023] According to one or more embodiments herein, a modular device for addressable LED arrays of arbitrary size is provided. The modular device may include transistors and one or more LED elements vertically integrated with a corresponding number of transistors. The one or more LED elements may generate, based on the vertical integration, a light emitting area that may enable the one or more LED elements in combination to substantially cover a device area of the modular device. The modular device can be placed in a densely-packed addressable LED array, such as in combination with other modular devices, to provide a larger light source of arbitrary dimensions. One or more technical effects, benefits, and advantages of the modular device may include maintaining addressability of the one or more LED elements of the modular device while creating the larger light source (e.g., the densely-packed addressable LED array).

[0024] Examples of different light illumination systems and/or LED implementations will be described more fully hereinafter with reference to the accompanying drawings. These examples are not mutually exclusive, and features found in one example may be combined with features found in one or more other examples to achieve additional implementations. Accordingly, it will be understood that the examples shown in the accompanying drawings are provided for illustrative purposes only and they are not intended to limit the disclosure in any way. Like numbers refer to like elements throughout. Examples of different light illumination systems and/or LED implementations will be described more fully hereinafter with reference to the accompanying drawings. These examples are not mutually exclusive, and features found in one example may be combined with features found in one or more other examples to achieve additional implementations. Accordingly, it will be understood that the examples shown in the accompanying drawings are provided for illustrative purposes only and they are not intended to limit the disclosure in any way. Like numbers refer to like elements throughout. Further, LEDs may have a relatively large light emitting region with outer walls surrounded on at least one side by very thin reflectors, such as dichroic mirrors, which may enable very close spacing of the LEDs, such as described above, while still maintaining a contrast between neighboring LEDs. In some embodiments, the reflectors may only be placed in locations where the side wall is adjacent a side wall of a neighboring LED. For such LEDs, standard pick and place techniques may be difficult for the reasons described above, particularly as the close spacing makes any movement of the LEDs problematic for their functionality.

[0025] FIG. 1 is a flow diagram of a method 100 according to one or more embodiments. The method 100 may be for an assembly of an addressable LED array utilizing modular devices. The addressable LED array may generate a light area based on a combination of the modular devices. The light area and the addressable LED array can be of arbitrary size, in that any number of the modular devices can be combined to provide a size required for a particular lighting application (e.g . , architectural lighting, entertainment lighting, retail lighting, hospitality lighting, and lighting applications including beam steering/shaping, color tuning in directional lighting, adaptive light engines, and latestage configuration). An example of the addressable LED array may include a densely-packed addressable LED array.

[0026] The method 100 and resulting addressable LED array accommodate a fully vertical device structure of each modular device. According to one or more embodiments, to provide the fully vertical device structure, a modular device may include one or more transistors, one or more LED elements vertically integrated with a corresponding number of transistors, and one or more electrical pads. The one or more LED elements may generate, based on the vertical integration, a light emitting area that may enable the one or more LED elements in combination to substantially cover a device area of the modular device. The one or more LED elements may be addressable within the modular device, and the modular devices may be addressable within the addressable LED array. Thus, by way of example, the modular devices can be placed in combination within the densely-packed addressable LED array to provide a larger light source of arbitrary dimensions. The arbitrary dimensions of the densely-packed addressable LED array may include at least a combination of each device area of each modular device therein. The larger light source, in turn, may provide a total emitted light that includes a combination of each light emitting area of each modular device.

[0027] The method of 100 is described in more detail below with respect to FIGS. 2-8, and similar items are demarcated with similar identifiers for ease of understanding and brevity.

[0028] At block 110, a plurality of modular devices may be vertically integrated. That is, each of the plurality of modular devices can be manufactured with a fully vertical device structure to maintain addressability of the one or more LED elements therein.

[0029] Turning to FIG. 2, a device 200 is shown according to one or more embodiments. The device 200 is an example of the modular device. The device 200 includes one or more LED elements 210, one or more transistors 220 within a substrate 225, and at least three electrode pads 230 at a bottom side 240 of the device 200. A first pad of the at least three electrode pads 230 can be used to switch the one or more transistors 220 on or off. A second pad and a third pad of the at least three electrode pads 230 may be used to power the device 200.

[0030] The one or more LED elements 210 can be implemented as discrete LED chips, as shown. The one or more LED elements 210 can, alternatively, be implemented as segments of a segmented monolithic LED chip (with trenches etched through a junction to separate the segments thereof). Circuitry under the one or more LED elements 210 can also include other elements, such as passive elements (i.e., resistors) and junction/Schottky barrier diodes, which can also be integrated in the substrate 225 as well.

[0031] The one or more transistors 220 can include a metal-oxide-semiconductor fieldeffect transistors (MOSFETs), low-temperature thin-film transistors (TFTs), or any suitable type of field-effect transistor (FET). By further way of example, the one or more transistors 220 can include bipolar junction transistors, poly-silicon field effect transistors, indium gallium zinc oxide (IGZO) TFTs, etc.

[0032] As shown in FIG. 2, each LED element 210 may be vertically integrated with a corresponding transistor 220, thereby enabling each LED element 210 to be directly addressable within the device. Vertical integration can include, but is not limited to, electrically coupling corresponding transistors 220 and LED elements 210 such that each LED element 210 is above, on top of, or in a vertical relationship to each transistors 220. In turn, electrical contacts between transistors 220 and LED elements 210 are under or behind an outward facing side to the LED elements 210, which further enables close placement of the LED elements 210 and the devices 200 that creates a more continuous light emitting area. One or more technical effects, benefits, and advantages of the device 200 may include leveraging the vertical integration so that the combination of the one or more LED elements 210 generate a light emitting area that covers a device area 260 of the device 200. The device area 260 is an envelope or a size of the device 200, such as based on perimeter dimensions thereof. For example, the device area 250 can be determined by multiplying a length and a width of exterior sides of the device 200. By way of example, a distance 270 from an edge 272 of the LED element 210 to an edge 274 of the device 200 or the substrate 255 may be less than a threshold, such as 200 pn, 100 /zm or 50 /zm. By way of another example, the LED element 210 can be differentiated from the device 200 or the substrate 255 by a ratio between an LED chip area 280 and the device area 260 that is greater than 70%, such as 80%, 90%, or 95%. The LED chip area 280 is an envelope or a size of the LED element 210, such as based on perimeter dimensions thereof. For example, the LED chip area 280 can be determined by multiplying a length and a width of exterior sides of the LED element 210.

[0033] Turning to FIG. 3, a device 300 is shown according to one or more embodiments. The device 300 is an example of the modular device. The device 300 includes at least three electrode pads 230 at a bottom side 240 of the device 200. The device 300 may include an LED chip, such as a segmented monolithic LED chip 310 with trenches 315 etched through a junction to separate the segments thereof. Circuitry under the LED chip can also include other elements, such as passive elements (i.e. , resistors) and junction/Schottky barrier diodes.

[0034] The segmented monolithic LED chip 310 can, alternatively, be implemented as discrete LED chips, as shown in FIG. 2. The device 300 may include a sub-mount, such as a complementary metal-oxide-semiconductor / through-silicon via (CMOS/TSV) silicon sub-mount 330. The segmented monolithic LED chip 310 can be bonded to the CMOS silicon sub-mount 330 through stud bump bonding 332 or any other suitable interconnect process. Note that the circuitry under the LED chip can also be integrated in the CMOS silicon sub-mount 330, as well. The CMOS/TSV silicon sub-mount 330 may include a CMOS silicon substrate 334 and a TSV layer 336. The CMOS/TSV silicon sub-mount 330 may provide vertical integration by the CMOS silicon substrate 334 leveraging the TSV layer 336 to route out contacts from the segmented monolithic LED chip 310 to the bottom side 240 of the device 200. The CMOS silicon substrate 334 can include at least one MOSFET for each LED element (i.e., each segment) of the segmented monolithic LED chip 310. By further way of example, the CMOS silicon substrate 334 can include can include bipolar junction transistors, polysilicon field effect transistors, indium gallium zinc oxide (IGZO) TFTs, etc. that align with LED elements. The CMOS silicon substrate 334 can, also, include logic and circuitry to maintain addressability of each LED element (i.e., each segment) of the segmented monolithic LED chip 310. [0035] One or more technical effects, benefits, and advantages of the device 300 include leveraging the vertical integration of the CMOS/TSV silicon sub-mount 330 so that the segmented monolithic LED chip 310 may generate a light emitting area that covers a device area 360 of the device 300. By way of example, a distance 370 from an edge 372 of the segmented monolithic LED chip 310 to an edge 374 of the device 300 or the CMOS/TSV silicon sub-mount 330 may be less than a threshold or greater than a ratio (i.e., a ratio between an LED chip area 280 and the device area 360), as described herein. Therefore, while conventional LED arrays hybridized onto CMOS/TSV wafers may not be automatically suitable for automotive headlighting applications due to top contacts lateral from LED dies, the device 300 may solve the lateral contacts by routing contacts out the bottom side 240.

[0036] Turning to FIG. 4, a device 400 is shown according to one or more embodiments. The device 400 is an example of the modular device. The device 400 may include at least three electrode pads 230 at a bottom side 240 of the device 200. The device 400 may include an LED chip, such as a segmented monolithic LED chip 310 with trenches 315 etched through a junction to separate the segments thereof. The device 400 includes a sub-mount 430. The segmented monolithic LED chip 310 can be bonded to the sub-mount 430 through bottom contacts 432, such as aluminum oxide, aluminum nitride, or FR4 with copper plugs.

[0037] According to one or more embodiments, a thin-film transistor (TFT) can be fabricated on an LED chip. As shown in FIG. 4, the segmented monolithic LED chip 310 can be integrated (e.g., using a low-temperature TFT process) with a low-temperature TFT 450. For instance, using the low- temperature TFT process, one or more transistors of the low-temperature TFT 450 can be integrated directly on the segmented monolithic LED chip 310 at wafer level. The low-temperature TFT 450 may provide vertical integration by directly integrating the one or more transistors to corresponding segments of the segmented monolithic LED chip 310. One or more technical effects, benefits, and advantages of the device 400 may include leveraging the vertical integration of the low-temperature TFT 450 so that the segmented monolithic LED chip 410 may generate a light emitting area that covers a device area 460 of the device 400 (as similarly described with respect to device 300). The segmented monolithic LED chip 410 integrated with the low-temperature TFT 450 may be mounted on the sub-mount 430. According to one or more embodiments, the device 400 may avoid high upfront cost of CMOS design and fabrication. According to one or more embodiments, low-temperature TFT processes can be used on micro-LED display applications to provide the device 400.

[0038] FIG. 5 shows a device 500 with a chip-scale package (CSP) according to one or more embodiments. The device 500 can be placed on the sub-mount 430 with the at least three electrode pads 230, which are described herein. The device 500 includes a LED chip, such as the segmented monolithic LED chip 310 with trenches 315 etched through a junction to separate the segments thereof. The device 500 may include a sub-mount 430. According to one or more embodiments, as shown in FIG. 5, the segmented monolithic LED chip 310 can be integrated (e.g., using a low- temperature TFT process) with the low-temperature TFT 450. Further, the device 500 can be implemented as a CSP when the LED chip has sufficient mechanical support. For example, the mechanical support of the device 500 can include leaving on a sapphire growth substrate 510. The sapphire growth substrate 510 can be of a target thickness to minimize cross-talk between the segments, such as less than 60 fim or 30 /zm. For another example, the mechanical support of the device 500 can include fabricating a thick support structure on a backside by plating and/or molding (e.g., a plate or molded support structure on the bottom side 240).

[0039] At block 130, at least one phosphor may be added to the modular device. Generally, the at least one phosphor may provide a broad spectrum by the modular device suitable for illumination. The modular device can be embedded in a ceramic or silicone matrix. In embodiments, the at least one phosphor may be in the form of a layer, such as by adding one or more phosphors to a silicone material, or a plate, such as a ceramic phosphor plate, as will be understood by one of ordinary skill in the art.

[0040] Turning to FIG. 6, a device 600 is shown according to one or more embodiments. The device 600 is an example of the modular device. The device 600 includes one or more LED elements 210, one or more transistors 220 within the substrate 225, and at least three electrode pads 230 at the bottom side 240 of the device 200. The device 600 may include at least one phosphor, such as a phosphor layer 610, according to one or more embodiments. The phosphor layer 610 can be segmented, as shown in FIG. 6, where each segment aligns with an LED element 210 to enable maximum luminance contrast between adjacent segments.

[0041] Turning to FIG. 7, a device 700 is shown according to one or more embodiments. The device 700 is an example of the modular device and similar items are demarcated with similar identifiers for ease of understanding and brevity. The device 700 may include at least one phosphor, such as a phosphor layer 710, according to one or more embodiments. The phosphor layer 710 can be a continuous phosphor layer, as shown in FIG. 7. According to one or more embodiment, the continuous phosphor can be continuous across multiple LED elements (i.e., at least two segments) to provide smoother luminance profiles.

[0042] Turning to FIG. 8, a device 800 is shown according to one or more embodiments. The device 800 is an example of the modular device and similar items are demarcated with similar identifiers for ease of understanding and brevity. The device 800 may include at least one phosphor, such as a phosphor layer with segments 811 , 812, and 813 that align with the one or more LED elements 210. According to one or more embodiments, the segments 811 , 812, and 813 may include multiple chromaticities (at least two). In this regard, different segments 811 , 812, and 813 may be powered on at various levels such that the device 800 may be operable as a color tunable device.

[0043] Note that at least one phosphor can be added to the modular device by one or more processes, such as a lithography-based process. FIG. 9 shows a device 900 with a phosphor 910 dispensed at a modular device level according to one or more embodiments. The device 900 includes at least one dam 920 on a substrate 930 supporting a densely-packed addressable LED array (i.e., that includes a plurality of devices 200). By way of example, the phosphor 910 may be applied at a modular device level across multiple devices 200 at once, such as by using a dam-and-dispense process. Note that any combination of devices 200, 300, 400, 500, 600, 700, and 800 can be implemented to form the device 900.

[0044] At block 150, addressability of one or more LEDS of the modular device may be maintained. Addressability of the one or more LEDS can be implemented in various ways. According to one or more embodiments, a contact may be routed out to the bottom side 240 of the device 200 for each transistor controlling an LED element. According to one or more embodiments, when the device includes a high segment count and/or small segment size, a row/column addressing scheme may be implemented similar to active matrix backplanes. FIG. 10 shows diagrams 1001 and 1002 of a segmented LED 1003 according to one or more embodiments. The segmented LED 1003 can be 7x7 segmented LED embodiment with row/column addressing. The diagram 1001 shows a top side of segmented LED 1003, while the diagram 1002 shows a bottom side of segmented LED 1003. The bottom side is example contact pad layout for a 7x7 segmented LED embodiment. The example contact pad layout can be scaled to dense arrays of multiple devices, as the respective row and column pads of adjacent devices can be connected through circuit traces on a PCB (i.e., the PCB 930) with relatively simple routing.

[0045] According to one or more embodiments, a microcontroller can be integrated in a CMOS (e.g., the CMOS/TSV silicon sub-mount 330) to internally control each of the LED elements. The microcontroller may communicate via inter-integrated circuit (I2C) or serial peripheral interface (SPI) bus to reduce a number of contacts required at the bottom side 240 of the device 200. For example, the SPI bus specifies four (4) logic signals (e.g., SCLK, MOSI, MISO and CS). Data input to the microcontroller can directly specify a power for each segment or can have some other format that requires further processing by the microcontroller. Further, the data input may specify a beam angle for a beam shaping device or chromaticity coordinates (x, y), (u’, v’) or (OCT, Duv) in the case of a color tunable device. The microcontroller can also have other functions, such as functions related to device health management. [0046] At block 170, the modular device may be assembled into an addressable light emitting diode array. Modular devices may be assembled on a PCB (i.e., the PCB 930) using a reflow soldering. Edge-to-edge spacing between the modular devices can be less than a threshold, such as less than 100 /zm. According to one or more embodiments, the edge-to-edge spacing between the modular devices can be less than 50 pn to minimize dark lines in a far-field projection. To further mitigate dark lines, the modular device can be programmed, such that edge LED elements of each device are slightly brighter than a central LED element. In this regard, with smoothing in optics of the addressable light emitting diode array, a luminance surplus from the edge LED elements may offset a luminance deficit in gaps of the addressable light emitting diode array.

[0047] Turning now to FIGS. 11 and 12, diagrams 1103, 1104, 1105, and 1206 show addressable light emitting diode arrays according to one or more embodiments. The diagrams 1103, 1104, and 1105 show an addressable light emitting diode array including a three by three (3x3) arrangement of modular devices with three by three (3x3) arrangements of LED elements. The addressable light emitting diode array of FIG. 1 1 can be used for beam shaping/steering. The diagram 1206 shows an addressable light emitting diode array including a two by two (2x2) arrangement of modular devices with three by three (3x3) arrangements of LED elements. The addressable light emitting diode array of FIG. 11 can be used for color tuning. Note that any combination of devices 200, 300, 400, 500, 600, 700, 800, and 900 can be implemented to form the addressable light emitting diode arrays of FIG. 11 and 12.

[0048] Thus, any number of the modular devices described herein can be combined to provide an addressable LED array of an arbitrary size required for a particular lighting application because each modular device maintains the addressability of the LED element therein. In turn, applications of the modular devices and the addressable LED array can include, but are not limited to, architectural lighting, entertainment lighting, retail lighting, hospitality lighting, and lighting applications including beam steering/shaping, color tuning in directional lighting, adaptive light engines, and late-stage configuration.

[0049] FIG. 13 is a diagram of an example vehicle headlamp system 1300 that may incorporate one or more of the embodiments and examples described herein. The example vehicle headlamp system 1300 illustrated in FIG. 13 includes power lines 1302, a data bus 1304, an input filter and protection module 1306, a bus transceiver 1308, a sensor module 1310, an LED direct current to direct current (DC/DC) module 1312, a logic low-dropout (LDO) module 1314, a microcontroller 1316, and an active head lamp 1318.

[0050] The power lines 1302 may have inputs that receive power from a vehicle, and the data bus 1304 may have inputs/outputs over which data may be exchanged between the vehicle and the vehicle headlamp system 1300. For example, the vehicle headlamp system 1300 may receive instructions from other locations in the vehicle, such as instructions to turn on turn signaling or turn on headlamps, and may send feedback to other locations in the vehicle if desired. The sensor module 1310 may be communicatively coupled to the data bus 1304 and may provide additional data to the vehicle headlamp system 1300 or other locations in the vehicle related to, for example, environmental conditions (e.g., time of day, rain, fog, or ambient light levels), vehicle state (e.g. , parked, in-motion, speed of motion, or direction of motion), and presence/position of other objects (e.g., vehicles or pedestrians). A headlamp controller that is separate from any vehicle controller communicatively coupled to the vehicle data bus may also be included in the vehicle headlamp system 1300. In FIG. 13, the headlamp controller may be a micro-controller, such as micro-controller (pc) 1316. The microcontroller 1316 may be communicatively coupled to the data bus 1304.

[0051] The input filter and protection module 1306 may be electrically coupled to the power lines 1302 and may, for example, support various filters to reduce conducted emissions and provide power immunity. Additionally, the input filter and protection module 1306 may provide electrostatic discharge (ESD) protection, load-dump protection, alternator field decay protection, and/or reverse polarity protection.

[0052] The LED DC/DC module 1312 may be coupled between the input filter and protection module 106 and the active headlamp 1318 to receive filtered power and provide a drive current to power LEDs in the LED array in the active headlamp 1318. The LED DC/DC module 1312 may have an input voltage between 13 and 18 volts with a nominal voltage of approximately 13.2 volts and an output voltage that may be slightly higher (e.g., 0.3 volts) than a maximum voltage for the LED array (e.g., as determined by factor or local calibration and operating condition adjustments due to load, temperature or other factors).

[0053] The logic LDO module 1314 may be coupled to the input filter and protection module 1306 to receive the filtered power. The logic LDO module 1314 may also be coupled to the microcontroller 1316 and the active headlamp 1318 to provide power to the micro-controller 1316 and/or electronics in the active headlamp 1318, such as CMOS logic.

[0054] The bus transceiver 1308 may have, for example, a universal asynchronous receiver transmitter (UART) or serial peripheral interface (SPI) interface and may be coupled to the microcontroller 1316. The micro-controller 1316 may translate vehicle input based on, or including, data from the sensor module 1310. The translated vehicle input may include a video signal that is transferrable to an image buffer in the active headlamp 1318. In addition, the micro-controller 1316 may load default image frames and test for open/short pixels during startup. In embodiments, an SPI interface may load an image buffer in CMOS. Image frames may be full frame, differential or partial frames. Other features of micro-controller 1316 may include control interface monitoring of CMOS status, including die temperature, as well as logic LDO output. In embodiments, LED DC/DC output may be dynamically controlled to minimize headroom. In addition to providing image frame data, other headlamp functions, such as complementary use in conjunction with side marker or turn signal lights, and/or activation of daytime running lights, may also be controlled.

[0055] FIG. 14 is a diagram of another example vehicle headlamp system 1400. The example vehicle headlamp system 1400 illustrated in FIG. 14 includes an application platform 1402, two LED lighting systems 1406 and 1408, and secondary optics 1410 and 1412.

[0056] The LED lighting system 1408 may emit light beams 1414 (shown between arrows 1414a and 1414b in FIG. 14). The LED lighting system 1406 may emit light beams 1416 (shown between arrows 1416a and 1416b in FIG. 14). In the embodiment shown in FIG. 14, a secondary optic 1410 is adjacent the LED lighting system 1408, and the light emitted from the LED lighting system 1408 passes through the secondary optic 1410. Similarly, a secondary optic 1412 is adjacent the LED lighting system 1406, and the light emitted from the LED lighting system 1406 passes through the secondary optic 1412. In alternative embodiments, no secondary optics 1410/812 are provided in the vehicle headlamp system.

[0057] Where included, the secondary optics 1410/812 may be or include one or more light guides. The one or more light guides may be edge lit or may have an interior opening that defines an interior edge of the light guide. LED lighting systems 1408 and 1406 may be inserted in the interior openings of the one or more light guides such that they inject light into the interior edge (interior opening light guide) or exterior edge (edge lit light guide) of the one or more light guides. In embodiments, the one or more light guides may shape the light emitted by the LED lighting systems 1408 and 1406 in a desired manner, such as, for example, with a gradient, a chamfered distribution, a narrow distribution, a wide distribution, or an angular distribution.

[0058] The application platform 1402 may provide power and/or data to the LED lighting systems 1406 and/or 1408 via lines 1404, which may include one or more or a portion of the power lines 1302 and the data bus 1304 of FIG. 13. One or more sensors (which may be the sensors in the vehicle headlamp system 1400 or other additional sensors) may be internal or external to the housing of the application platform 1402. Alternatively, or in addition, as shown in the example vehicle headlamp system 1300 of FIG. 13, each LED lighting system 1408 and 1406 may include its own sensor module, connectivity and control module, power module, and/or LED array.

[0059] In embodiments, the vehicle headlamp system 1400 may represent an automobile with steerable light beams where LEDs may be selectively activated to provide steerable light. For example, an array of LEDs or emitters may be used to define or project a shape or pattern or illuminate only selected sections of a roadway. In an example embodiment, infrared cameras or detector pixels within LED lighting systems 1406 and 1408 may be sensors (e.g., similar to sensors in the sensor module 1310 of FIG. 13) that identify portions of a scene (e.g., roadway or pedestrian crossing) that require illumination.

[0060] As would be apparent to one skilled in the relevant art, based on the description herein, embodiments of the present invention can be designed in software using a hardware description language (HDL) such as, for example, Verilog or VHDL. The HDL-design can model the behavior of an electronic system, where the design can be synthesized and ultimately fabricated into a hardware device. In addition, the HDL-design can be stored in a computer product and loaded into a computer system prior to hardware manufacture.

[0061] Having described the embodiments in detail, those skilled in the art will appreciate that, given the present description, modifications may be made to the embodiments described herein without departing from the spirit of the inv concept. Therefore, it is not intended that the scope of the invention be limited to the specific embodiments illustrated and described.

[0062] It will be understood that, although the terms first, second, third, etc. may be used herein to describe various elements, these elements should not be limited by these terms. These terms may be used to distinguish one element from another. For example, a first element may be termed a second element and a second element may be termed a first element without departing from the scope of the present invention. As used herein, the term "and/or" may include any and all combinations of one or more of the associated listed items.

[0063] It will be understood that when an element such as a layer, region, or substrate is referred to as being "on" or extending "onto" another element, it may be directly on or extend directly onto the other element or intervening elements may also be present. In contrast, when an element is referred to as being "directly on" or extending "directly onto" another element, there may be no intervening elements present. It will also be understood that when an element is referred to as being "connected" or "coupled" to another element, it may be directly connected or coupled to the other element and/or connected or coupled to the other element via one or more intervening elements. In contrast, when an element is referred to as being "directly connected" or "directly coupled" to another element, there are no intervening elements present between the element and the other element. It will be understood that these terms are intended to encompass different orientations of the element in addition to any orientation depicted in the figures.

[0064] Relative terms such as "below," "above," "upper,", "lower," "horizontal" or "vertical" may be used herein to describe a relationship of one element, layer, or region to another element, layer, or region as illustrated in the figures. It will be understood that these terms are intended to encompass different orientations of the device in addition to the orientation depicted in the figures.

Claims

CLAIMS What is claimed is:

1. A modular device comprising: one or more light emitting diode elements; and one or more transistors, wherein each of the one or more light emitting diode elements are electrically coupled to a corresponding transistor of the one or more transistors to provide a vertical integration between that light emitting diode and that corresponding transistor, wherein the one or more light emitting diode elements generate, based on the vertical integration, a light emitting area that covers a device area of the modular device.

2. The modular device of claim 1 , wherein the modular device comprises: at least three electrode pads at a bottom side of the modular device.

3. The modular device of claim 2, wherein a first pad of the at least three electrode pads switches the one or more transistors.

4. The modular device of claim 3, wherein a second pad and a third pad of the at least three electrode pads power the modular device.

5. The modular device of claim 1 , wherein the one or more light emitting diode elements comprise a discrete light emitting diode chip.

6. The modular device of claim 1 , wherein the device area comprises an envelope of the modular device based on perimeter dimensions.

7. The modular device of claim 1 , wherein a distance from an edge of a light emitting diode element of the one or more light emitting diode elements to an edge of the modular device is less than a threshold to enable the one or more light emitting diode elements to generate the light emitting area that covers the device area of the modular device.

8. The modular device of claim 7, wherein the threshold comprises as 200 pn, 100 pn or 50 /zm.

9. The modular device of claim 1 , wherein a ratio between a light emitting diode chip area and the device area is greater than 70% to enable the one or more light emitting diode elements to generate the light emitting area that covers the device area of the modular device.

10. The modular device of claim 9, wherein the ratio is 80%, 90%, or 95%.

11. The modular device of claim 1 , wherein the one or more light emitting diode elements comprise one or more segments of a segmented monolithic light emitting diode chip.

12. A modular device comprising: a light emitting diode chip comprising one or more light emitting diode elements; and a sub-mount comprising one or more transistors; wherein each of the one or more light emitting diode elements are electrically coupled to a corresponding transistor of the one or more transistors to provide a vertical integration between that light emitting diode and that corresponding transistor, wherein the light emitting diode chip generates, based on the vertical integration, a light emitting area that covers a device area of the modular device.

13. The modular device of claim 12, wherein the light emitting diode chip comprises a segmented monolithic light emitting diode chip including one or more segments corresponding to the one or more light emitting diode elements.

14. The modular device of claim 12, wherein the light emitting diode chip is bonded to the submount through stud bump bonding.

15. The modular device of claim 12, wherein the device area comprises an envelope of the modular device based on perimeter dimensions.

16. The modular device of claim 12, wherein the vertical integration comprises that electrical contacts between the one or more transistors and the one or more light emitting diode elements are under or behind an outward facing side to the one or more light emitting diode elements.

17. The modular device of claim 12, wherein the sub-mount comprises a complementary metal- oxide-semiconductor/ through-silicon via silicon sub-mount comprising one or more transistors.

18. The modular device of claim 17, wherein the complementary metal-oxide-semiconductor/ through-silicon via silicon sub-mount comprises a complementary metal-oxide-semiconductor silicon substrate and a through-silicon via layer.

19. The modular device of claim 18, wherein the through-silicon via layer routes out contacts from the light emitting diode chip to a bottom side of the modular device to provide the vertical integration.

20. A method comprising: vertically integrating a modular device comprising a plurality of transistors and a plurality of light emitting diodes; adding at least one phosphor to the modular device; maintaining an addressability of the plurality of light emitting diodes; and assembling the modular device into an addressable light emitting diode array using a reflow soldering.