EP4632526A1

EP4632526A1 - Bandgap reference voltage generation circuit and semiconductor device having same

Info

Publication number: EP4632526A1
Application number: EP23901052.3A
Authority: EP
Inventors: Chang In Park; Young Ho Seo; Jeong Rim HONG
Original assignee: LX Semicon Co Ltd
Current assignee: LX Semicon Co Ltd
Priority date: 2022-12-08
Filing date: 2023-12-05
Publication date: 2025-10-15
Also published as: WO2024123033A1; CN120322742A

Abstract

The present invention relates to a bandgap reference voltage generation circuit capable of stably generating a bandgap reference voltage, and a semiconductor device having same. The present invention may comprise: a current generator which includes a first transistor, a first resistor connected to a collector end of the first transistor, a second transistor, a second resistor connected to a collector end of the second transistor, and a fourth resistor connected to emitter ends of the first transistor and the second transistor, and generates a PTAT current proportional to absolute temperature by using the second resistor connected to the second transistor and a base-emitter voltage difference between the first transistor and the second transistor; an amplification part for forming a negative feedback loop in the first transistor and the second transistor; a power supply for supplying power to the current generator via a third resistor; and a compensation circuit for compensating for a collector current difference between the first transistor and the second transistor.

Description

TECHNICAL FIELD

The present invention relates to a bandgap reference voltage generation circuit capable of stably generating a bandgap reference voltage and a semiconductor device having the same.

BACKGROUND ART

Various electronic devices including home appliances, smartphones, wearable devices, etc. include semiconductor devices such as Micro Controller Units (MCU), memories, etc.
The semiconductor device includes a bandgap reference voltage generation circuit for supplying a stable internal power using power supplied from the outside.
The bandgap reference voltage generation circuit requires characteristics that can stably generate and supply reference voltage even if operating environments such as power supply voltage, process, and temperature change.
With the advancement of process technology, MCU products are trending toward using short-channel MOS devices of tens of nanometers (nm) to enhance competitiveness. As a side effect, as the process is scaled down, the amplification factor (commonly called Beta) of the bipolar junction transistor may decrease.
When the amplification factor is low, in a bandgap reference voltage generation circuit including a current generator that generates current according to the difference between base-to-emitter voltages of two bipolar transistors, the base-to-emitter current of the transistor increases, and thereby, a large difference in collector current between the two transistors may occur, resulting in a disadvantage of degraded characteristics of the bandgap reference. Accordingly, a problem may occur in which the change in output voltage becomes larger.
Therefore, a solution to these problems is required.

DISCLOSURE

TECHNICAL PROBLEM

According to an embodiment of the present invention, it is intended to provide a bandgap reference voltage generation circuit and a semiconductor device having same that can compensate for the difference in collector current between two transistors in a bandgap reference voltage generation circuit including a current generator that generates current according to the difference between base-to-emitter voltages of two bipolar transistors.
Also, according to an embodiment of the present invention, it is intended to provide a bandgap reference voltage generation circuit and a semiconductor device having same that can generate a reference voltage robust to process, voltage, and temperature (PVT) of the transistor even when using transistors with low amplification factors.
Further, according to another embodiment of the present invention, those skilled in the art may understand through the entire context of the specification and drawings that there may be additional technical problems not mentioned here.

TECHNICAL SOLUTION

In a first aspect of the present invention to achieve the above-mentioned objective, the present invention includes: a current generator which includes a first transistor, a first resistor connected to a collector terminal of the first transistor, a second transistor, a second resistor connected to a collector terminal of the second transistor, and a fourth resistor connected to emitter terminals of the first transistor and the second transistor, and generates a PTAT current proportional to absolute temperature using a base-emitter voltage difference between the first transistor and the second transistor and the second resistor connected to the second transistor; an amplification part configured to form a negative feedback loop to the first transistor and the second transistor; a power supply configured to supply power to the current generator; and a compensation circuit configured to compensate for a difference in collector current between the first transistor and the second transistor.
In an exemplary embodiment, the compensation circuit may include: a third transistor having a base terminal connected to the first transistor through a current source; and a fifth resistor connected to an emitter terminal of the third transistor.
In an exemplary embodiment, the third transistor may have a same amplification ratio as the first transistor.
In an exemplary embodiment, the fifth resistor may have a resistance value that is an integer multiple of the fourth resistor.
In an exemplary embodiment, the base-emitter current of the first transistor and the base-emitter current of the third transistor may be identical.
In an exemplary embodiment, an amplification factor of at least one of the first transistor and the second transistor may be 5 or less.
In an exemplary embodiment, a voltage input to the amplification part may be a voltage obtained by dividing a voltage at the collector terminal of the first transistor and a voltage obtained by dividing a voltage at the collector terminal of the second transistor.
In an exemplary embodiment, the first transistor and the second transistor may be NPN bipolar transistors.
In an exemplary embodiment, the amplification part may include an op-amp connected to the collector terminals of the first transistor and the second transistor.
In a second aspect of the present invention to achieve the above-mentioned objective, the present invention may include: a first bipolar transistor with an emitter terminal placed toward a first potential node; a second bipolar transistor having an emitter area larger than an emitter area of the first bipolar transistor, with an emitter terminal having a same potential as the emitter terminal of the first bipolar transistor, and a base terminal placed toward the collector of the first bipolar transistor; a first resistor having one end placed toward the collector of the first bipolar transistor and the other end placed toward the base of the second bipolar transistor; a second resistor having one end placed toward the collector of the second bipolar transistor and the other end connected to the other end of the first resistor; a fourth resistor connected to the emitter terminals of the first transistor and the second transistor; an amplification part configured to form a negative feedback loop to the first transistor and the second transistor; a power supply configured to supply power to a core unit; and a compensation circuit configured to compensate for a difference in collector current between the first transistor and the second transistor.
In an exemplary embodiment, the compensation circuit may include: a third transistor having a base terminal connected to the second transistor through a current source and having a same amplification ratio as the second transistor; and a fifth resistor connected to an emitter terminal of the third transistor.
In a third aspect of the present invention to achieve the above-mentioned objective, the present invention may include a semiconductor device comprising: a bandgap reference voltage generation circuit having the characteristics as described above; and a device circuit configured to receive and use the bandgap reference voltage from the bandgap reference voltage generation circuit.

EFFECT OF THE INVENTION

According to an exemplary embodiment of the present invention, the following effects are achieved.
First, according to an embodiment of the present invention, it is possible to compensate for the difference in collector current between two transistors in a bandgap reference voltage generation circuit including a current generator that generates current according to the difference between base-emitter voltages of two bipolar transistors.
Also, according to an embodiment of the present invention, it is possible to generate a reference voltage robust to process, voltage, and temperature (PVT) of the transistor even when using transistors with low amplification factors.
Further, according to yet another embodiment of the present invention, there are additional technical effects not mentioned here. Those skilled in the art can understand through the entire context of the specification and drawings.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a block diagram schematically showing a semiconductor device according to an embodiment of the present invention.
FIG. 2 is a circuit diagram showing a bandgap reference voltage generation circuit according to an embodiment of the present invention.
FIG. 3 is a circuit diagram for explaining matters related to the amplification factor of a transistor in a bandgap reference voltage generation circuit.
FIG. 4 is a circuit diagram for explaining matters related to the amplification factor of a transistor in a bandgap reference voltage generation circuit according to an embodiment of the present invention.
FIG. 5 is a graph showing bandgap reference voltage output according to temperature by the circuit shown in FIG. 3.
FIG. 6 is a graph showing bandgap reference voltage output in a bandgap reference voltage generation circuit according to an embodiment of the present invention.

BEST MODE FOR CARRYING OUT THE INVENTION

Hereinafter, embodiments disclosed in this specification will be described in detail with reference to the accompanying drawings, but the same or similar components are given the same reference numbers regardless of the reference numbers, and redundant descriptions thereof will be omitted. The suffixes "module" and "unit" used in the description of the components below are given or used interchangeably only in consideration of ease of writing the specification, and do not have any distinguishing meanings or roles by themselves.
Also, in describing the embodiments disclosed in this specification, a detailed description of known technologies will be omitted if it is determined that the detailed description of the known technology may obscure the gist of the embodiments disclosed in this specification.
In addition, the accompanying drawings are only for easy understanding of the embodiments disclosed in this specification, and it should be noted that the technical idea disclosed in this specification should not be interpreted as being limited by the accompanying drawings.
Furthermore, although each drawing is described for convenience of explanation, it also falls within the scope of the present invention that those skilled in the art implement other embodiments by combining two or more drawings.
Also, when an element such as a layer, region, or substrate is mentioned to exist "on" another component, it can be understood that it may exist directly on the other element or that intermediate elements may exist in between.
FIG. 1 is a block diagram schematically showing a semiconductor device according to an embodiment of the present invention.
Referring to FIG. 1, the semiconductor device 1 may include a bandgap reference voltage generation circuit 100 and a device circuit 200.
In one embodiment, the semiconductor device 1 may be an electronic device such as a semiconductor chip that generates a data signal based on power supplied from the outside. For example, the semiconductor device 1 may be any one of various semiconductor devices such as a Micro Controller Unit (MCU), a processor, a Power Management Integrated Circuit (PMIC), a memory, etc., which are included in devices such as a computer, a smartphone, a tablet, etc.
The device circuit 200 may include an analog circuit, a digital circuit, an analog and digital circuit such as an analog-to-digital converter and a digital-to-analog converter that require bandgap reference voltage (VBGROUT) in the semiconductor device 1, or a combination thereof.
The bandgap reference voltage generation circuit 100 may stably generate a reference voltage (VBGR) regardless of changes in operating environment including at least one of changes in power supply voltage, process, and temperature, using a power supply voltage supplied from the outside, and output it to the device circuit 200.
The bandgap reference voltage generation circuit 100 may implement stable start-up operation regardless of changes in the operating environment to generate and output a normal reference voltage (VBGR) to the device circuit 200.
FIG. 2 is a circuit diagram showing a bandgap reference voltage generation circuit according to an embodiment of the present invention.
Referring to FIG. 2, as an example, a bandgap reference voltage generation circuit 100 based on NPN junction bipolar transistors (BJT; Q1, Q2, Q3) and an op-amp (OP-amp; 110) is shown.
Such a bandgap reference voltage generation circuit 100 may generate a PTAT current using the difference between base-emitter voltages (VBE) of the first transistor Q1 and the second transistor Q2 and the second resistor R2 connected to the second transistor Q2. Here, PTAT (Proportional to Absolute Temperature) current may refer to a current proportional to absolute temperature.
Also, referring to FIG. 2, an op-amp A1 forming a negative feedback loop to the first transistor Q1 and the second transistor Q2 may be used as an amplification part. As shown, the op-amp A1 may have its plus terminal (+) connected to the collector terminal of the second transistor Q2 and its minus terminal (-) connected to the collector terminal of the first transistor Q1.
In this way, the amplification part may form the collector voltage of the first transistor Q1 and the collector voltage of the second transistor Q2 to be identical by forming a negative feedback loop using the op-amp A1.
Through such a circuit, a constant voltage may be output by flowing the sum of the PTAT current flowing through the first resistor R1 and the second resistor R2 and the temperaturedependent CTAT (Complementary to Absolute Temperature) current flowing through the third resistor R3 through the fourth resistor R4.
Here, the CTAT voltage corresponds to the base-emitter voltage (VBE) (VBE2) of the second transistor Q2, and the PTAT voltage corresponds to 2*(R3+R4)/R2*(VBE2-VBE1). Thus, these CTAT voltage and PTAT voltage may be combined at BGR output node to form a temperature-constant voltage. That is, the bandgap reference voltage (VBGROUT) may be the sum of the CTAT voltage and the PTAT voltage (VBGROUT = VBE2 + 2*(R3+R4)/R2*(VBE2-VBE1)).
Such first transistor Q1, second transistor Q2, first resistor R1, second resistor R2, and fourth resistor R4 may form the main part of the current generator.
A power supply VDD-MP1 for supplying power to such a current generator (Q1, Q2, R1, R2, and R4) may be connected. In some cases, such a power supply VDD-MP1 may be connected to the current generator (Q1, Q2, R1, R2, and R4) through the third resistor R3.
Here, a compensation circuit 10 may be connected to the first transistor Q1 side. Such a compensation circuit 10 may include a third transistor Q3 having a base terminal connected to the first transistor Q1 and a fifth resistor 2R4 connected to the emitter terminal of this third transistor Q3. Such a compensation circuit 10 may receive current I3 through the current source 120.
As an example, the compensation circuit 10 may connect a third transistor Q3, which is a replica bipolar transistor (replica BJT), to the collector terminal of the first transistor Q1. Here, the size of the third transistor Q3 may be the same as that of the first transistor Q1. Therefore, it is possible to induce the base-emitter current of the first transistor Q1 and the base-emitter current of the third transistor Q3 to be the same.
Through the compensation circuit 10, the collector current of the first transistor Q1 is also sourced with the base-emitter current of the third transistor Q3 as much as the base-emitter current of the first transistor Q1 is sourced in the collector current of the second transistor Q2, so that the mismatch between the collector current of the first transistor Q1 and the collector current of the second transistor Q2 may be compensated.
In other words, without the compensation circuit 10, the base-emitter current of the first transistor Q1 may cause a mismatch between the collector current of the first transistor Q1 and that of the second transistor Q2. This mismatch may be a problem as the amplification factor (beta) of the transistor gets lower. Therefore, through the compensation circuit 10, a reference voltage robust to the process, voltage, and temperature (PVT) of the transistor may be generated even when the transistor has a low amplification factor of 5 or less. This will be described in detail later.
Referring to FIG. 2, the bandgap reference voltage generation circuit 100 according to an embodiment of the present invention may include a current generator (Q1, Q2, R1, R2, and R4) including a first transistor Q1, a first resistor R1 connected to the collector terminal of the first transistor Q1, a second transistor Q2, a second resistor R2 connected to the collector terminal of the second transistor Q2, and a fourth resistor R4 connected to the emitter terminals of the first transistor Q1 and the second transistor Q2, generating a PTAT current proportional to absolute temperature using the base-emitter voltage difference between the first transistor Q1 and the second transistor Q2 and the second resistor R2 connected to the second transistor Q2.
In addition, the bandgap reference voltage generation circuit 100 may include an amplifier A1 which forms a negative feedback loop to the first transistor Q1 and the second transistor Q2, a power supply VDD-MP1 supplying power to the current generator through the third resistor R3, and a compensation circuit 10 which compensates for the difference in collector current between the first transistor Q1 and the second transistor Q2.
Here, the third transistor Q3 included in the compensation circuit 10 may have the same amplification ratio as the first transistor Q1.
In an exemplary embodiment, the fifth resistor 2R4 connected to the emitter terminal of the third transistor Q3 may have a resistance value that is an integer multiple of the fourth resistor R4. As an example, the fifth resistor 2R4 may have a value twice that of the fourth resistor R4.
As an example, the amplification factor of at least one of the first transistor Q1 and the second transistor Q2 may be 5 or less. As mentioned above, the role of the compensation circuit 10 may become greater when the amplification factor is 5 or less.
In an exemplary embodiment, the voltage input to the amplification part 110 may be a voltage obtained by dividing the voltage at the collector terminal of the first transistor Q1 and a voltage obtained by dividing the voltage at the collector terminal of the second transistor Q2.
As a specific example, according to an embodiment of the present invention, the bandgap reference voltage generation circuit 100 may include a first transistor Q1 with the emitter terminal placed toward a first potential node, a second transistor Q2 having an emitter area larger than the emitter area of the first transistor Q1, with an emitter terminal having the same potential as the emitter terminal of the first transistor Q1 and a base terminal placed toward a collector of the first transistor Q1, a first resistor R1 having one end placed toward the collector of the first transistor Q1 and the other end placed toward the base of the first transistor, a second resistor R2 having one end placed toward the collector of the second transistor Q2 and the other end connected to the other end of the first resistor R1, a fourth resistor R4 connected to the emitter terminals of the first transistor Q1 and the second transistor Q2, the amplification part 110 forming a negative feedback loop with the first transistor Q1 and the second transistor Q2, a power supply VDD-MP1 supplying power, and a compensation circuit 10 compensating for the difference in collector current between the first transistor Q1 and the second transistor Q2.
Here, the output VBRGOUT of the bandgap reference voltage VBGR may be made at the point between the power supply VDD-MP1 and the current generator (Q1, Q2, R1, R2, and R4). Here, in some cases, a third resistor R3 may be connected between the power supply VDD-MP1 and the current generator (Q1, Q2, R1, R2, and R4).
FIG. 3 is a circuit diagram for explaining matters related to the amplification factor of a transistor in a bandgap reference voltage generation circuit.
In FIG. 3, the bandgap reference voltage generation circuit 20 has substantially the same configuration as the current generator (Q1, Q2, R1, R2, and R4) explained above. Such a bandgap reference voltage generation circuit 20 is connected to an amplification part 21 forming a negative feedback loop to the first transistor Q1 and the second transistor Q2.
Referring to FIG. 3, two bipolar transistors Q4, Q5 connected to two field effect transistors MP2, MP3 may respectively perform substantially the same function as the op-amp A1 described above.
Such a bandgap reference voltage generation circuit 20 may be basically useful when the amplification factor of the transistors Q1 and Q2 is 100 or higher.
The minimum operating voltage VDDmmin of the bandgap reference voltage generation circuit 20 may be the sum of the bandgap reference voltage VBGR, the gate-source voltage and the drain-source voltage of the field effect transistor MP1 constituting the power supply VDD-MP1.
The bandgap reference voltage VBGR of such a circuit may be calculated as in Mathematical Equation 1. $VBGR = VBE 1 + 2 \{\frac{R 1 + R 4}{R 2}\} VT \ln [(1 - \frac{1}{β}) n]$
Here, β (beta) refers to the amplification factor of the transistors Q1 and Q2. Here, VT is the thermal voltage, and n refers to the multiplication factor of the first transistor Q1 and the second transistor Q2.
Referring to Mathematical Equation 1, it can be seen that the smaller the β (beta), the more the temperature coefficient (TC) characteristic deteriorates. That is, the smaller the β (beta), the greater the temperature dependence of the bandgap reference voltage VBGR.
Here, transistors Q1, Q2, Q4, and Q5, and currents Ic1, Ic2, Ib2, Ib3, and Ib4 flowing in each portion have the following relationship. $\begin{array}{l} Q_{5} = Q_{4}, R_{1} = R_{2}, Q_{1} : Q_{2} = 1 : n \\ I_{c 1} = I_{1} - {Ib}_{4} - {Ib}_{2} \\ I_{c 2} = I_{2} - {Ib}_{3} \\ I_{b 2} = \frac{I_{c 2}}{β} \end{array}$
On the other hand, when having the condition as in Mathematical Equation 3 below, applying Mathematical Equation 3 to Mathematical Equation 1 results in Mathematical Equation 4. $\begin{array}{l} I_{1} = I_{2}, {Ib}_{3} = {Ib}_{4} \\ I_{c 1} = {Ic}_{2} - \frac{I_{c 2}}{β} = (1 - \frac{1}{β}) I_{c 2} \end{array}$ $Δ V_{BE} = {VBE}_{1} - {VBE}_{2} = VT \ln \frac{I_{C 1}}{I_{S}} - VT \ln \frac{I_{C 2}}{{nI}_{S}} = VT \ln (1 - \frac{1}{β}) n$
As such, it can be seen that the smaller the β, the more it is affected by temperature, resulting in a larger change in the temperature coefficient (TC).
FIG. 4 is a circuit diagram for explaining matters related to the amplification factor of a transistor in a bandgap reference voltage generation circuit according to an embodiment of the present invention.
The bandgap reference voltage generation circuit 100 shown in FIG. 4 is substantially identical to the bandgap reference voltage generation circuit 100 shown in FIG. 2 above.
Referring to FIG. 4, it may be a state where the amplification part 110 and the compensation circuit 10 are added to the bandgap reference voltage generation circuit 20 shown in FIG. 3. Here, the compensation circuit 10 may receive current through the current source 120.
With the compensation circuit 10 applied, the condition as in Mathematical Equation 5 below can be achieved. $\begin{array}{l} Q_{3} = Q_{4}, R_{1} = R_{2}, Q_{1} : Q_{2} : Q_{5} = 1 : 8 : 8 \\ I_{c 1} = I_{1} - {Ib}_{4} - {Ib}_{2} \\ I_{c 2} = I_{2} - {Ib}_{3} - {Ib}_{5} \\ I_{b 2} = {Ib}_{5} \end{array}$
Here, when having the condition as in Mathematical Equation 6 below, applying Mathematical Equation 6 to Mathematical Equation 1 results in Mathematical Equation 7. $\begin{array}{l} I_{1} = I_{2}, {Ib}_{3} = {Ib}_{4}, I_{b 2} = {Ib}_{5} \\ I_{c 1} = {Ic}_{2} \end{array}$ $Δ V_{BE} = {VBE}_{1} - {VB}_{E 2} = VT \ln \frac{I_{C 1}}{I_{S}} - VT \ln \frac{I_{C 2}}{{nI}_{S}} = VT \ln n$
As such, it can be seen that in Mathematical Equation 7, the dependence on the amplification factor (β (beta)) is removed, and shows characteristics robust to voltage (V) and temperature (T).
FIG. 5 is a graph showing bandgap reference voltage output according to temperature by the circuit shown in FIG. 3. FIG. 6 is a graph showing bandgap reference voltage output in a bandgap reference voltage generation circuit according to an embodiment of the present invention.
It can be seen that the graph shown in FIG. 5 shows that the bandgap reference voltage VBGR has a large dependence on temperature. In FIGS. 5 and 6, each line represents temperature dependence according to various driving voltages and manufacturing processes.

Comparing with Table 1 below, it can be seen that in the circuit shown in FIG. 3, the change in TC characteristics due to process variation is large, whereas according to the embodiment of the present invention shown in FIG. 4, it has TC characteristics with relatively little change due to process variation. Therefore, when 1-point trimming at room temperature, FIG. 4 may be more effective than the circuit of FIG. 3. This temperature point can be set to room temperature (27°C).

[Table 1]

	Configuration of FIG. 3			Configuration of FIG. 4 (the present invention)
	Min	Typ	Max	Min	Typ	Max
VBGR	1.191V	1.204V	1.213V	1.248V	1.267V	1.288V
VBGR TC	8.19mV		17.5mV	1.76mv		10.2mv

As such, according to the embodiment of the present invention, a bandgap reference voltage generation circuit capable of generating a reference voltage robust to process, voltage, and temperature (PVT) may be provided.
The above description is merely an exemplary illustration of the technical idea of the present invention, and it will be apparent to those skilled in the art that various modifications and changes can be made within the scope not departing from the essential characteristics of the present invention.
Therefore, the embodiments disclosed in the present invention are not intended to limit the technical idea of the present invention but to explain it, and the scope of the technical idea of the present invention is not limited by these embodiments.
The scope of protection of the present invention should be interpreted by the claims below, and it should be interpreted that all technical ideas within the equivalent scope are included in the scope of rights of the present invention.

INDUSTRIAL APPLICABILITY

According to the present invention, a bandgap reference voltage generation circuit capable of stably generating a bandgap reference voltage and a semiconductor device having same can be provided.

Claims

A bandgap reference voltage generation circuit comprising:
a current generator which includes a first transistor, a first resistor connected to a collector terminal of the first transistor, a second transistor, a second resistor connected to a collector terminal of the second transistor, and a fourth resistor connected to emitter terminals of the first transistor and the second transistor, and generates a PTAT current proportional to absolute temperature using a base-emitter voltage difference between the first transistor and

the second transistor and the second resistor connected to the second transistor;

an amplification part configured to form a negative feedback loop to the first transistor and the second transistor;

a power supply configured to supply power to the current generator; and

a compensation circuit configured to compensate for a difference in collector current between the first transistor and the second transistor.
The bandgap reference voltage generation circuit according to claim 1, wherein the compensation circuit comprises:
a third transistor having a base terminal connected to the first transistor; and

a fifth resistor connected to an emitter terminal of the third transistor.
The bandgap reference voltage generation circuit according to claim 2, wherein the third transistor has a same amplification ratio as the first transistor.
The bandgap reference voltage generation circuit according to claim 2, wherein the fifth resistor has a resistance value that is an integer multiple of the fourth resistor.
The bandgap reference voltage generation circuit according to claim 2, wherein base-emitter current of the first transistor and base-emitter current of the third transistor operate are identical.
The bandgap reference voltage generation circuit according to claim 1, wherein an amplification factor of at least one of the first transistor and the second transistor is 5 or less.
The bandgap reference voltage generation circuit according to claim 1, wherein a voltage input to the amplification part is a voltage obtained by dividing a voltage at the collector terminal of the first transistor and a voltage obtained by dividing a voltage at the collector terminal of the second transistor.
The bandgap reference voltage generation circuit according to claim 1, wherein the first transistor and the second transistor are NPN bipolar transistors.
The bandgap reference voltage generation circuit according to claim 1, wherein the amplification part includes an op-amp connected to the collector terminals of the first transistor and the second transistor.
A bandgap reference voltage generation circuit comprising:
a first transistor with an emitter terminal placed toward a first potential node;

a second transistor having an emitter area larger than an emitter area of the first transistor, with an emitter terminal having a same potential as the emitter terminal of the first transistor, and a base terminal placed toward the collector of the first transistor;

a first resistor having one end placed toward the collector of the first transistor and the other end placed toward the base of the first transistor;

a second resistor having one end placed toward the collector of the second transistor and the other end connected to the other end of the first resistor;

a fourth resistor connected to the emitter terminals of the first transistor and the second transistor;

an amplification part configured to form a negative feedback loop to the first transistor and the second transistor;

a power supply configured to supply power to a core unit through a third resistor; and

a compensation circuit configured to compensate for a difference in collector current between the first transistor and the second transistor.
The bandgap reference voltage generation circuit according to claim 10, wherein the compensation circuit comprises:
a third transistor having a base terminal connected to the second transistor through a current source and having a same amplification ratio as the second transistor; and

a fifth resistor connected to an emitter terminal of the third transistor.
The bandgap reference voltage generation circuit according to claim 11, wherein the fifth resistor has a resistance value that is an integer multiple of the fourth resistor.
The bandgap reference voltage generation circuit according to claim 11, wherein the base-emitter current of the second transistor and the base-emitter current of the third transistor operate to be identical.
The bandgap reference voltage generation circuit according to claim 10, wherein an amplification factor of at least one of the first transistor and the second transistor is 5 or less.
The bandgap reference voltage generation circuit according to claim 10, wherein the voltage input to the amplification part is a voltage obtained by dividing the voltage at the collector terminal of the first transistor and a voltage obtained by dividing the voltage at the collector terminal of the second transistor.
The bandgap reference voltage generation circuit according to claim 10, wherein the first transistor and the second transistor are NPN bipolar transistors.
A semiconductor device comprising:
a bandgap reference voltage generation circuit according to any one of claims 1 to 17; and

a device circuit configured to receive and use the bandgap reference voltage from the bandgap reference voltage generation circuit.