EP4605485A1

EP4605485A1 - Semiconductor device, method of fabricating the same, and silicone-based resin composition contained therein

Info

Publication number: EP4605485A1
Application number: EP22803304.9A
Authority: EP
Inventors: Taejoon Kim; Jonghak Choi; YoungHyuk Joo; Jungyu LEE
Original assignee: Wacker Chemie AG
Current assignee: Wacker Chemie AG
Priority date: 2022-10-21
Filing date: 2022-10-21
Publication date: 2025-08-27
Also published as: KR20250090321A; TW202417576A; TWI847842B; WO2024083341A1; CN120051546A

Abstract

Provided is a semiconductor device, including: a semiconductor package; a heat dissipation part disposed on the semiconductor package; and a thermally conductive layer in direct contact with the semiconductor package and the heat dissipation part, wherein the thermally conductive layer includes a silicone-based resin composition, wherein the silicone- based resin composition includes an organic polysiloxane; a conductive filler; and a curing catalyst, and a lap shear strength measured according to DIN EN 1465 in the silicone-based resin composition is 0.30 N/mm² to 1.8 N/mm².

Description

SEMICONDUCTOR DEVICE, METHOD OF FABRICATING THE SAME, AND SILICONE- BASED RESIN COMPOSITION CONTAINED THEREIN

[Technical Field]

An embodiment relates to a semiconductor device, a method of fabricating the same, and a silicone-based resin composition contained therein.

[Background Art]

Since most electronic components generate heat during use thereof, it is necessary to remove heat from the electronic components for proper operation of the electronic components. In particular, in integrated circuit elements such as CPUs used in personal computers, the amount of heat dissipated is increasing due to an increase in operating frequency, whereby countermeasures against heat are an important problem.

Accordingly, many methods for dissipating such heat have been proposed. In particular, in electronic components dissipating a large amount of heat, a method of dissipating heat by interposing a thermally conductive material, such as thermally conductive grease or a thermally conductive sheet, between an electronic component and a member such as a heat sink has been proposed.

Korean Patent Application Publication No. 10-2020-0086307 discloses a semiconductor device including a thermally conductive composition.

[Disclosure] [Technical Problem]

Therefore, the present invention has been made in view of the above problems, and it is one object of the present invention to provide a semiconductor device having improved heat dissipation characteristics and capable of maintaining heat dissipation performance even against external physical impact, a method of fabricating the semiconductor device, and a silicone-based resin composition contained in the semiconductor device.

[Technical Solution]

In accordance with an aspect of the present invention, the above and other objects can be accomplished by the provision of a semiconductor device, including: a semiconductor package; a heat dissipation part disposed on the semiconductor package; and a thermally conductive layer in direct contact with the semiconductor package and the heat dissipation part, wherein the thermally conductive layer includes a silicone-based resin composition, wherein the silicone- based resin composition includes an organic polysiloxane; a conductive filler; and a curing catalyst, and a lap shear strength measured according to DIN EN 1465 in the silicone-based resin composition is 0.30 N/mm² to 1.8 N/mm².

In accordance with another aspect of the present invention, there is provided A method of fabricating a semiconductor device, the method including: disposing a semiconductor package; coating a silicone-based resin composition on the semiconductor package; disposing a heat dissipation part on the silicone-based resin composition; and curing the silicone-based resin composition to form a thermally conductive layer, wherein the silicone-based resin composition includes an organic polysiloxane; a conductive filler; and a curing catalyst, and a lap shear strength measured according to DIN EN 1465 in the silicone-based resin composition is 0.30

N/mm² to 1.8 N/mm².

The silicone-based resin composition according to an embodiment includes an organic poly siloxane; a conductive filler; and a curing catalyst, and a lap shear strength measured according to DIN EN 1465 in the silicone-based resin composition is 0.30 N/mm² to 1.8 N/mm².

In an embodiment, the conductive filler may include a first thermally conductive powder having a tap density of less than 2.99 g/cm³; and a second thermally conductive powder having a tap density of greater than 3.01 g/cm³.

In an embodiment, the first thermally conductive powder may have a specific surface area of 0.5 m²/g to 1.6 m²/g, and the second thermally conductive powder may have a specific surface area of 0.1 m²/g to 0.5 m²/g.

In an embodiment, a weight ratio of the second thermally conductive powder to the first thermally conductive powder may be 0.2 to 0.7.

In an embodiment, a junction separation length measured according to DIN EN 1465 may be 0.3 mm or more.

In an embodiment, a shear modulus obtained by dividing the lap shear strength by the junction separation length may be 0.4 N/mm³ to 1.8 N/mm³.

In the silicone-based resin composition according to an embodiment, a coverage measured by a measurement method below may be 90% or more:

[measurement method] the silicone-based resin composition is coated in a weight of 0.7 g on a first silicon substrate having a size of 27 mmx27 mm, and then a second silicon substrate having a size equal to or larger than the first silicon substrate is placed on the coated silicone-based resin composition, and then the silicone-based resin composition is cured in a state of being compressed with a force of 3 kgf, and then an area of the first silicon substrate in close contact with the second silicon substrate by the silicone-based resin composition is derived, and the coverage is a ratio of an area of the first silicon substrate in close contact with the second silicon substrate compared to a plane area of the first silicon substrate.

In a silicone-based resin composition according to an embodiment, a spread thickness measured by a measurement method below may be less than 200 μm:

[Measurement method]

The spread thickness is a thickness of a cured silicone-based resin composition layer disposed between the first silicon substrate and the second silicon substrate.

In a silicone-based resin composition according to an embodiment, a pot life of the silicone-based resin composition may be 10 hours or more.

[Advantageous effects]

A semiconductor device according to an embodiment includes a thermally conductive layer including a silicone-based resin composition having an appropriate lap shear strength. Accordingly, the thermally conductive layer can have an appropriate shear bonding force. In addition, the silicone-based resin composition for forming the thermally conductive layer can have an appropriate junction separation length.

Accordingly, the thermally conductive layer can have high adhesiveness even under shear stress. That is, since the thermally conductive layer has an appropriate shear bonding force and an appropriate junction separation length, appropriate bonding strength to the semiconductor package and the heat dissipation part can be maintained even when shear stress due to thermal shock is applied to the thermally conductive layer.

Accordingly, when a physical shock such as a thermal shock from the outside is applied to the semiconductor device according to an embodiment, shear stress due to a thermal expansion rate difference between the heat dissipation part and the semiconductor package is applied to the thermally conductive layer. Here, since the silicone-based resin composition has an appropriate lap shear strength and an appropriate junction separation length, it is possible to prevent peeling of the thermally conductive layer which may be caused by shear stress.

Accordingly, the semiconductor device and silicone-based resin composition according to an embodiment can maintain improved heat dissipation performance.

In addition, the silicone-based resin composition can have an improved coverage and an appropriate spread thickness. Accordingly, the silicone-based resin composition can be evenly coated to a uniform thickness between the semiconductor package and the heat dissipation part. Therefore, the semiconductor device and silicone-based resin composition according to an embodiment can have improved heat dissipation performance.

[Description of Drawings]

FIG. 1 is a sectional view illustrating a cross-section of a semiconductor device according to an embodiment.

FIG. 2 is a sectional view illustrating a process of measuring a lap shear strength and junction separation length of a silicone-based resin composition.

[Best mode]

In the description of embodiments, in the case where it is described that each part, surface, layer or substrate is formed "on" or "under" each part, surface, layer or substrate, etc., “on” and “under” include both “directly”, or “indirectly” formed by interposing another element. In addition, the reference for the upper or lower of each component will be described with reference to the drawings. The size of each component in the drawings may be exaggerated for explanation, and does not mean the size actually applied.

Referring to FIG. 1, the semiconductor device according to an embodiment includes a circuit board 100, a semiconductor package 200, conductive bumps 300, a heat dissipation part 400 and a thermally conductive layer 500.

The circuit board may support the semiconductor package, the conductive bumps, the heat- dissipation part, and the thermally conductive layer.

The circuit board may include circuit patterns. The circuit board includes an insulating and heat-resistant material, and a plurality of circuit patterns are disposed inside a flat body thereof having a predetermined strength. In addition, the circuit board is a connection pad electrically connected to the circuit patterns and disposed on the body.

For example, the body of the circuit board includes a thermosetting resin system or flat plate such as an epoxy resin substrate or a polyimide substrate, or a flat plate to which a heat- resistant organic film such as a liquid crystal polyester film or a polyamide film is attached. The circuit patterns include a power wiring and ground wiring arranged in a pattern shape inside the body and provided for power supply and a signal wiring for transmitting a signal. Each of the wires may be arranged to be separated from each other by a plurality of interlayer insulating films formed on the upper and lower surfaces of the body.

The connection pad is exposed to the outside from the upper surface of the body and is connected to the circuit patterns. Accordingly, an external connector connected to the circuit board is electrically connected to the internal circuit patterns through the connection pad.

Various electronic components may be mounted in the connection pad included in the circuit board. That is, the circuit board may be a system board on which electronic components including the semiconductor package, etc. are mounted.

The semiconductor package is mounted on the circuit board. The semiconductor package is disposed on the circuit board. The semiconductor package is connected to the circuit board through the conductive bumps.

The semiconductor package may include a semiconductor chip including an integrated circuit, a semiconductor package substrate connected to the semiconductor chip, a conductive solder for connecting the semiconductor chip and the semiconductor package substrate, and a sealing part for sealing the semiconductor chip and the conductive solder. The sealing part may include a resin composition such as epoxy molding.

The semiconductor package may be a memory device, a central processing unit, or the like.

The conductive bumps are disposed between the semiconductor package and the circuit board. The conductive bumps electrically connect the semiconductor package and the circuit board. The conductive bumps are electrically connected to the semiconductor package and the connection pad.

The heat dissipation part is disposed on the semiconductor package. The heat dissipation part may cover the semiconductor package. The heat dissipation part may be bonded to the circuit board. The heat dissipation part may cover a side surface of the semiconductor package.

The heat dissipation part may include a conductor. The heat dissipation part may include a metal. The heat dissipation part may be thermally connected to an external heat dissipation fin.

In addition, the heat dissipation part may protect the semiconductor package from external physical impact. The heat dissipation part may protect the semiconductor package from external electromagnetic waves. That is, the heat dissipation part may block external electromagnetic waves.

The thermally conductive layer is disposed between the semiconductor package and the heat dissipation part. The thermally conductive layer is in direct contact with the semiconductor package and the heat dissipation part. The thermally conductive layer may be in close contact between the semiconductor package and the heat dissipation part.

The thermally conductive layer is thermally connected to the semiconductor package and the heat dissipation part. That is, the thermally conductive layer transfers heat generated from the semiconductor package to the heat dissipation part.

The thickness of the thermally conductive layer may be about 1 μm to about 100 μm. The thickness of the thermally conductive layer may be about 2 μm to about 70 jam. The thickness of the thermally conductive layer may be about 5 μm to about 60 μm. The thickness of the thermally conductive layer may be about 10 μm to about 40 μm.

The thermally conductive layer includes a silicone-based resin composition. The silicone-based resin composition may be thermosetting.

The silicone -based resin composition may include an organic polysiloxane.

The organic polysiloxane may be represented by the following average composition formula (1):

R^SiOb (1)

In the composition formula (1), R¹ may represent a hydrogen atom, a hydroxyl group, or one or more groups selected from a saturated or unsaturated monovalent hydrocarbon group having 1 to 18 carbon atoms, and a may be about 1.8 to about 2.2. a+b may be about 3.5 to about 8.

More specifically, a+b may be 4.

In the composition formula (1), the saturated or unsaturated monovalent hydrocarbon group having 1 to 18 carbon atoms represented by R¹ may be, for example, an alkyl group such as a methyl group, an ethyl group, a propyl group, a hexyl group, an octyl group, a decyl group, a dodecyl group, a tetradecyl group, a hexadecyl group, or an octadecyl group; a cycloalkyl group such as a cyclopentyl group or a cyclohexyl group; an alkenyl group such as a vinyl group or an allyl group; an aryl group such as a phenyl group or a tolyl group; an aralkyl group such as a 2- phenylethyl group or a 2 -methy 1-2 -phenylethyl group; or a halogenated hydrocarbon group such as a 3, 3, 3 -trifluoropropyl group, a 2-(perfluorobutyl)ethyl group, a 2-(perfluorooctyl)ethyl group, or a p-chlorophenyl group.

The organic polysiloxane may have a weight average molecular weight (Mw) of about 40000 g/mol to about 80000 g/mol. The organic polysiloxane may have a weight average molecular weight (Mw) of about 30000 g/mol to about 100000 g/mol. The organic poly siloxane may have a weight average molecular weight (Mw) of about 500 g/mol to about 10000 g/mol. The organic polysiloxane may have a weight average molecular weight of about 700 g/mol to about 7000 g/mol. The organic polysiloxane may have a weight average molecular weight of about 1000 g/mol to about 5000 g/mol. The organic polysiloxane may have a weight average molecular weight of about 1500 to about 3000 g/mol. The weight average molecular weight may be measured based on polystyrene.

In the organic polysiloxane, a kinematic viscosity at 25°C may be 10 to 100000 mm²/s. In the organic polysiloxane, a kinematic viscosity at 25°C may be 20000 to 100000 mm²/s. In the organic polysiloxane, a kinematic viscosity at 25°C may be about 30 to about 10000 mm²/s. The kinematic viscosity of the organic polysiloxane may be a value at 25 °C measured with an Ostwald viscometer.

Since the organic polysiloxane has the weight average molecular weight and the kinematic viscosity as described above, the thermally conductive layer may have appropriate bonding strength and appropriate elasticity. In particular, since the organic polysiloxane has the weight average molecular weight and the kinematic viscosity as described above, the thermally conductive layer can easily withstand stress in a lateral direction.

The organic poly siloxane may include a first organic poly siloxane.

The first organic polysiloxane may include an alkenyl group bonded to a silicon atom, and the number of the alkenyl groups in one molecule of the first organic polysiloxane may be at least two or more. The number of the alkenyl groups in one molecule of the first organic poly siloxane may be 2 to 10. The number of the alkenyl groups in one molecule of the first organic polysiloxane may be 2 to 5. The number of the alkenyl groups in one molecule of the first organic polysiloxane may be 2.

The first organic polysiloxane may be represented by the following average composition formula (2):

R¹aR²cSiO_b (2)

In the composition formula (2), R¹ may be a hydrogen atom, a hydroxyl group, or a saturated or unsaturated monovalent hydrocarbon group having 1 to 18 carbon atoms, and R² may be an alkenyl group. In the composition formula (2), a+c may be about 1.8 to about 2.2, and a+b+c may be about 3.5 to about 8. In the composition formula (2), a+b+c may be about 4. In the composition formula (2), a may be about 1.8 to about 2.2. In addition, c may be 0.0001 to 0.1.

The first organic polysiloxane may be represented by the following Chemical Formula

(3).

[Chemical Formula 3]

In Chemical Formula 3, R¹ may be a hydrogen atom, a hydroxyl group, or a saturated or unsaturated monovalent hydrocarbon group having 1 to 18 carbon atoms, and R² may be an alkenyl group. In addition, in Chemical Formula 3, n may be 1 to 1500, and m may be 0 to 20.

In Chemical Formula 3, n may be 10 to 1000, and m may be 0 to 20.

The first organic polysiloxane may be represented by the following Chemical Formula (4):

[Chemical Formula 4]

In Chemical Formula 4, n may be 1 to 1500. n may be 10 to 1000.

The first organic polysiloxane may have a weight average molecular weight (Mw) of about 500 g/mol to about 10000 g/mol. The first organic polysiloxane may have a weight average molecular weight of about 700 g/mol to about 7000 g/mol. The first organic polysiloxane may have a weight average molecular weight of about 1000 g/mol to about 5000 g/mol. The first organic polysiloxane may have a weight average molecular weight of about 1500 to about 3000 g/mol. The weight average molecular weight may be measured based on polystyrene.

In the first organic polysiloxane, a kinematic viscosity at 23 °C may be 10 to 100000 cPs. In the first organic polysiloxane, a kinematic viscosity at 23 °C may be about 30 to about 50000 cPs. In the first organic polysiloxane, a kinematic viscosity at 23 °C may be about 10000 to about 40000 cPs. The kinematic viscosity of the first organic polysiloxane may be a value at 23 °C measured with an Ostwald viscometer.

The organic polysiloxane may include a second organic polysiloxane. The second organic polysiloxane may include a hydrogen group bonded to a silicon atom. The number of hydrogen groups per molecule of the second organic polysiloxane may be 1 to 10. The number of hydrogen groups per one molecule of the second organic polysiloxane may be 2 to 10. The number of hydrogen groups per one molecule of the second organic polysiloxane may be 2 to 5. The number of hydrogen groups per one molecule of the second organic polysiloxane may be 2.

The second organic polysiloxane may be represented by the following Chemical Formula 5:

[Chemical Formula 5]

In Chemical Formula 5, R¹ may be a hydrogen atom, a hydroxyl group, or a saturated or unsaturated monovalent hydrocarbon group having 1 to 18 carbon atoms, and R³ may be a hydrogen atom. In addition, in Chemical Formula 5, n may be 1 to 1500, and m may be 0 to 20.

In Chemical Formula 5, n may be 10 to 1000, and m may be 0 to 20. In Chemical Formula 5, n may be 1 to 1500, and m may be 0.

The second organic polysiloxane may be represented by the following Chemical

Formula 6:

[Chemical Formula 6]

The second organic poly siloxane may have a viscosity of about 500 cPs to about 5000 cPs at about 23 °C. The second organic polysiloxane may have a viscosity of about 500 cPs to about 3000 cPs at about 23°C. The second organic polysiloxane may have a viscosity of about 500 cPs to about 2000 cPs at about 23°C.

The organic polysiloxane may further include a third organic polysiloxane. The third organic polysiloxane may be represented by the following Chemical Formula 7:

[Chemical Formula 7] In Chemical Formula 7, R¹ may be a hydrogen atom, a hydroxyl group, or a saturated or unsaturated monovalent hydrocarbon group having 1 to 18 carbon atoms, and R³ may be a hydrogen atom. In addition, in Chemical Formula 7, n may be 1 to 1500, and m may be 1 to 500. In Chemical Formula 7, n may be 10 to 1000, and m may be 1 to 100.

The third organic polysiloxane may be represented by the following Chemical Formula 8:

[Chemical Formula 8]

In Chemical Formula 8, n may be 1 to 1500, and m may be 1 to 500. In Chemical Formula 8, n may be 10 to 1000, and m may be 1 to 100.

The third organic polysiloxane may have a viscosity of about 50 cPs to about 1000 cPs at about 23 °C. The third organic polysiloxane may have a viscosity of about 100 cPs to about 500 cPs at about 23°C. The third organic polysiloxane may have a viscosity of about 100 cPs to about 400 cPs at about 23 °C.

A ratio of the viscosity of the first organic polysiloxane to the viscosity of the second organic poly siloxane may be 10:1 to 40:1.

In addition, a ratio of the viscosity of the second organic polysiloxane to the viscosity of the third organic polysiloxane may be 2:1 to 10:1.

A content of the first organic polysiloxane may be about 60 parts by weight to about 90 parts by weight based on 100 parts by weight of the total of the organic polysiloxanes. A content of the first organic poly siloxane may be about 70 parts by weight to about 85 parts by weight based on 100 parts by weight of the total of the organic polysiloxanes. A content of the first organic polysiloxane may be about 75 parts by weight to about 85 parts by weight based on 100 parts by weight of the total of the organic poly siloxanes.

A content of the second organic polysiloxane may be about 10 parts by weight to about 40 parts by weight based on 100 parts by weight of the first organic polysiloxane. A content of the second organic polysiloxane may be about 10 parts by weight to about 30 parts by weight based on 100 parts by weight of the first organic polysiloxane. A content of the second organic polysiloxane may be about 12 parts by weight to about 23 parts by weight based on 100 parts by weight of the first organic poly siloxane.

A content of the third organic polysiloxane may be about 3 parts by weight to about 20 parts by weight based on 100 parts by weight of the first organic polysiloxane. A content of the third organic polysiloxane may be about 3 parts by weight to about 15 parts by weight based on 100 parts by weight of the first organic poly siloxane. A content of the third organic polysiloxane may be about 4 parts by weight to about 10 parts by weight based on 100 parts by weight of the first organic polysiloxane.

Since the silicone-based resin composition includes the first organic polysiloxane, the second organic polysiloxane and the third organic polysiloxane within the same range as described above, the thermally conductive layer may have appropriate bonding strength and appropriate elasticity. In particular, since the organic polysiloxane has the same content and viscosity as described above, the silicone-based resin composition may be evenly spread in a coating process.

The silicone-based resin composition includes a thermally conductive filler.

The thermally conductive filler may include inorganic particles. The thermally conductive filler may include metal particles. The thermally conductive filler may include silver. The thermally conductive filler may include a silver powder.

The thermally conductive filler may include a second thermally conductive powder and a second conductive powder.

The first conductive powder may include a first silver powder. A tap density of the first silver powder may be less than about 3.0 g/cm³. The tap density of the first silver powder may be less than about 2.99 g/cm³. The tap density of the first silver powder may be less than about 2.97 g/cm³. The tap density of the first silver powder may be less than about 2.95 g/cm³. A minimum value of the tap density of the first silver powder may be about 2.0 g/cm³.

To obtain the tap density, 100 g of silver powder is weighed and lightly dropped into a 100 ml measuring cylinder with a funnel, and then the measuring cylinder is placed on a tap density measuring device and the silver powder is compressed by dropping 600 times at a rate of 60 times/min from a fall distance of 20 mm. The tap density may be calculated from the volume of the compressed powder.

A specific surface area of the first silver powder may exceed about 2.0 m²/g. The specific surface area of the first silver powder may exceed about 3.0 m²/g. The specific surface area of the first silver powder may exceed about 5.0 m²/g. The specific surface area of the first silver powder may exceed about 6.0 m²/g. The specific surface area of the first silver powder may exceed about 7.0 m²/g. The specific surface area of the first silver powder may exceed about 8.0 m²/g. A maximum value of the specific surface area of the first silver powder may be about 20 m²/g.

To obtain the specific surface area, about 2 g of silver powder is taken as a sample, and after degassing at 60±5°C for 10 minutes, a total surface area is measured with an automatic specific surface area measuring device (BET method). Next, the amount of the sample is weighed and the specific surface area is calculated according to the following equation:

Specific surface area (m²/g) = total surface area (m²)/sample amount (g) An aspect ratio of silver particles included in the first silver powder may be about 2 to 5.

An aspect ratio of silver particles included in the first silver powder may be about 2.5 to about 4.

The silver particles included in the first silver powder may have an angular shape.

The first silver powder may be surface-treated with a surface treatment agent. The surface treatment agent may include a CIO to C20 fatty acid. Examples of the fatty acid include capric acid, lauric acid, myristic acid, palmitic acid, stearic acid, arachidic acid, myristoleic acid, palmitolic acid, sapienic acid, oleic acid, elaidic acid, vaccenic acid, linoleic acid, linolelaidic acid, arachidonic acid, eicosapentaenoic acid, a-linolenic acid, and the like.

An ignition loss (Ig-loss) of the first silver powder may be less than about 0.8 wt%. The Ig-loss of the first silver powder may be less than about 0.7 wt%. The Ig-loss of the first silver powder may be less than about 0.6 wt%.

The ignition loss may be measured over about 1 hour at about 538°C.

The surface of the first silver powder may be effectively treated even with a small amount of the surface treatment agent. That is, the first silver powder has a relatively low tap density and a large specific surface area, and may be surface-treated with a small amount of a surface treatment agent.

Accordingly, the first silver powder may be uniformly dispersed in the organic polysiloxane and may improve thermal connection of the conductive filler. That is, since the first silver powder has improved dispersibility, the first silver powder may be added in a high content to the organic polysiloxane. In addition, since the first silver powder has a large surface area such as a flake shape or a polygonal shape and a layer thereof coated with the surface treatment agent is thin, contact characteristics between conductive fillers may be improved. Accordingly, the first silver powder may improve the thermal conductivity of the silicone -based resin composition.

An average particle diameter of the first silver powder may be about 0.5 μm to about 4 μm. The average particle diameter of the first silver powder may be about 1 μm to about 3 μm. The average particle diameter of the first silver powder may be about 1.5 μm to about 2.5 μm.

The silicone-based resin composition may include the first silver powder in a content of about 300 parts by weight to about 1000 parts by weight based on 100 parts by weight of the organic polysiloxane. The silicone-based resin composition may include the first silver powder in a content of about 400 parts by weight to about 900 parts by weight based on 100 parts by weight of the organic polysiloxane. The silicone-based resin composition may include the first silver powder in a content of about 500 parts by weight to about 800 parts by weight based on 100 parts by weight of the organic polysiloxane.

The second conductive powder may include a second silver powder.

A tap density of the second silver powder may be greater than about 3.0 g/cm³. The tap density of the second silver powder may be greater than about 3.01 g/cm³. The tap density of the second silver powder may be greater than about 4 g/cm³. The tap density of the second silver powder may be greater than about 5 g/cm³. The tap density of the second silver powder may be greater than about 5.5 g/cm³. A maximum value of the tap density of the second silver powder may be about 9 g/cm³.

A specific surface area of the second silver powder may be less than about 0.6 m²/g. The specific surface area of the second silver powder may be less than about 0.5 m²/g. The specific surface area of the second silver powder may be less than about 0.45 m²/g. The specific surface area of the second silver powder may be less than about 0.4 m²/g. The specific surface area of the second silver powder may be less than about 0.5 m²/g. A minimum value of the specific surface area of the second silver powder may be about 0.05 m²/g.

An aspect ratio of silver particles included in the second silver powder may be about 1 to 2. The aspect ratio of silver particles included in the second silver powder may be about 1.2 to about 1.7.

The silver particles included in the second silver powder may have a spherical shape.

The second silver powder may be surface-treated with the CIO to C20 fatty acid.

An ignition loss (Ig-loss) of the second silver powder may be less than about 0.8 wt%. The Ig-loss of the second silver powder may be less than about 0.7 wt%. The Ig-loss of the second silver powder may be less than about 0.6 wt%.

An average particle diameter of the second silver powder may be about 1.5 μm to about 5 μm. The average particle diameter of the second silver powder may be about 2 μm to about 4 μm. The average particle diameter of the second silver powder may be about 2.5 μm to about 3.5 μm.

The silicone-based resin composition may include the second silver powder in a content of about 100 parts by weight to about 800 parts by weight based on 100 parts by weight of the organic polysiloxane. The silicone-based resin composition may include the second silver powder in a content of about 150 parts by weight to about 700 parts by weight based on 100 parts by weight of the organic polysiloxane. The silicone-based resin composition may include the second silver powder in a content of about 170 parts by weight to about 600 parts by weight based on 100 parts by weight of the organic polysiloxane. In addition, a weight ratio of the first silver powder to the second silver powder may be about 1 : 1 to about 5:1. The weight ratio of the first silver powder to the second silver powder may be about 2:1 to about 4:1. The weight ratio of the first silver powder to the second silver powder may be about 2: 1 to about 3:1.

Since the first silver powder and the second silver powder have the above-described characteristics, the thermally conductive layer may have high thermal conductivity, appropriate bonding strength, and appropriate elasticity. In addition, since the first silver powder and the second silver powder have the above-described characteristics, the thermally conductive layer can easily withstand stress in a lateral direction. In addition, the first silver powder and the second silver powder are appropriately mixed, so that the curable silicone resin composition can realize high thermal conductivity, has improved flowability, and can be evenly spread.

In particular, since the first silver powder is surface-treated with the surface treatment agent, the organic poly siloxane may have high dispersibility.

Since the first silver powder is uniformly dispersed in the organic polysiloxane, the lap shear strength of the silicone-based resin composition may be improved. In addition, since the first silver powder is surface-treated even with a small amount of a surface treatment agent, the first silver powder has improved contact characteristics, thereby improving the thermal conductivity of the silicone-based resin composition.

In addition, since the conductive filler is a mixture of the first silver powder having a relatively low tap density and the second silver powder having a relatively high tap density, the silicone-based resin composition may have appropriate lap shear strength due to the second silver powder and improved thermal conductivity due to the first silver powder having improved contact characteristics. the silicone-based resin composition may further include a tackifier.

The tackifier may include alkoxy silane. In addition, the tackifier may include an epoxy group. The tackifier may be at least one selected from the group consisting of 2-(3,4 epoxy cyclohexyl) ethyltrimethoxysilane, 3-glycidoxypropyl methyldimethoxysilane, 3- glycidoxypropyl trimethoxysilane, 3-glycidoxypropyl methyl di ethoxysilane, or 3- glycidoxypropyl triethoxysilane.

The silicone-based resin composition may include the tackifier in a content of about 1 parts by weight to about 20 parts by weight based on 100 parts by weight of the organic polysiloxane. The silicone-based resin composition may include the tackifier in a content of about 1 parts by weight to about 10 parts by weight based on 100 parts by weight of the organic polysiloxane. The silicone-based resin composition may include the tackifier in a content of about 2 parts by weight to about 8 parts by weight based on 100 parts by weight of the organic poly siloxane.

The tackifier may improve adhesion force between the organic polysiloxane and a metal. The tackifier may improve bonding force between the organic polysiloxane and the silver powder. In addition, the tackifier may improve adhesion force between the thermally conductive layer and the heat dissipation part. In addition, the tackifier may improve adhesion force between the semiconductor package and the heat dissipation part.

The silicone-based resin composition includes a curing catalyst. The curing catalyst accelerates curing of the silicone-based resin composition.

The curing catalyst may include a platinum-based catalyst. Examples of the curing catalyst include organic titanate esters such as platinum- divinyltetramethyldisiloxane complex, tetrabutyl titanate, and tetraisopropyl titanate; organic titanium chelate compounds such as diisopropoxybis(acetylacetate)titanium and diisopropoxybis(ethylacetoacetate)titanium; organoaluminum compounds such as aluminum tris(acetylacetonate) and aluminum tris(ethylacetoacetate); organic zirconium compounds such as zirconium tetra(acetylacetonate) and zirconium tetrabutylate; organic tin compounds such as dibutyltin dioctoate, dibutyltin dilaurate, and butyltin-2-ethylhexoate; metal salts of organic carboxylic acids such as tin naphthenate, tin oleate, tin butyrate, cobalt naphthenate, and zinc stearate; amine compounds such as hexylamine and dodecylamine phosphate and salts thereof; quaternary ammonium salts such as benzyltriethylammonium acetate; lower fatty acid salts of alkali metals such as potassium acetate; dialkyl hydroxylamines such as dimethylhydroxylamine and diethylhydroxylamine; and guanidyl group-containing organosilicon compounds.

The silicone-based resin composition may include the curing catalyst in a content of about 0.01 parts by weight to about 5 parts by weight based on 100 parts by weight of the organic polysiloxane. The silicone-based resin composition may include the curing catalyst in a content of about 0.03 parts by weight to about 3 parts by weight based on 100 parts by weight of the organic polysiloxane. The silicone-based resin composition may include the curing catalyst in a content of about 0.1 parts by weight to about 2 parts by weight based on 100 parts by weight of the organic polysiloxane.

The silicone-based resin composition may further include a reaction inhibitor. The reaction inhibitor may be at least one selected from the group consisting of acetylenic compounds such as 2-methyl-3-butyn-2-ol, 2-phenyl-3-butyn-2-ol, and 1-ethynyl-l- cyclohexanol; ene-yne compounds such as 3-methyl-3-penten-l-yne and 3,5-dimethyl-3-hexen-

1-yne; curing reaction inhibitors such as hydrazine-based compounds, phosphine-based compounds, and mercaptan-based compound; and the like.

The content of the reaction inhibitor may be about 0.0001 to about 10 parts by mass based on 100 parts by mass of the organic polysiloxane.

The silicone-based resin composition is not specifically limited and may be prepared according to a conventionally known method for preparing a silicone composition.

For example, the silicone-based resin composition may be prepared by mixing the organic polysiloxane, the conductive filler, the tackifier, the curing catalyst, the curing reaction inhibitor, and the like for 30 minutes to 4 hours using a mixer such as Trimix, Twinmix, and a planetary mixer (all of which are manufactured by Inoue Seisakusho Co., Ltd., registered trademark); Ultramixer (manufactured by Mizuho Kogyo Co., Ltd., registered trademark); or Hibis Disper Mix (manufactured by Primix Co., Ltd., registered trademark). In the mixing process, a process temperature may be about 0°C to about 25°C.

The semiconductor device according to an embodiment may be fabricated by the following method.

First, the semiconductor package is mounted on the circuit board by the conductive bumps. Next, the silicone-based resin composition is coated on the semiconductor package. Alternatively, the silicone-based resin composition may be coated on a lower surface of the heat dissipation part.

Next, the heat dissipation part covers the semiconductor package. Accordingly, the coated silicone-based resin composition is in direct contact with the lower surface of the heat dissipation part and an upper surface of the semiconductor package, and the curable silicone resin composition is cured at about 80°C or higher in a state in which a pressure of about 0.01 MPa is applied.

A pressure in the curing process may be about 0.01 MPa or more. The pressure in the curing process may be about 0.05 MPa to about 100 MPa. The pressure in the curing process may be about 0.1 MPa to about 100 MPa.

A temperature in the curing process may be about 110°C to about 300°C. The temperature in the curing process may be about 120°C to about 300°C. The temperature in the curing process may be about 140°C to about 300°C.

A curing time in the curing process may be about 30 minutes to about 5 hours.

Accordingly, the thermally conductive layer may be formed.

The thermally conductive layer may have a lap shear strength.

The lap shear strength of the thermally conductive layer may be about 0.25 N/mm² to about 1.8 N/mm². The lap shear strength of the thermally conductive layer may be about 0.30 N/mm² to about 1.5 N/mm². The lap shear strength of the thermally conductive layer may be about 0.30 N/mm² to about 1.2 N/mm². The lap shear strength of the thermally conductive layer may be about 0.60 N/mm² to about 1.1 N/mm².

In addition, the silicone-based resin composition may have a lap shear strength.

The lap shear strength of the silicone-based resin composition may be about 0.25 N/mm² to about 1.8 N/mm². The lap shear strength of the silicone-based resin composition may be about 0.30 N/mm² to about 1.5 N/mm². The lap shear strength of the silicone-based resin composition may be about 0.30 N/mm² to about 1.2 N/mm². The lap shear strength of the silicone-based resin composition may be about 0.60 N/mm² to about 1.1 N/mm².

In the silicone-based resin composition, the lap shear strength may be measured according to DIN EN 1465. Likewise, the lap shear strength in the thermally conductive layer may be measured according to DIN EN 1465.

The thermally conductive layer may have a junction separation length.

The junction separation length of the thermally conductive layer may be greater than about 0.3 mm. The junction separation length of the thermally conductive layer may be greater than about 0.35 mm. The junction separation length of the thermally conductive layer may be greater than 0.4 mm. The junction separation length of the thermally conductive layer may be greater than 0.45 mm. The junction separation length of the thermally conductive layer may be greater than 0.5 mm. In the thermally conductive layer, a maximum value of the junction separation length may be about 2 mm.

The silicone-based resin composition may have a junction separation length.

The junction separation length of the silicone-based resin composition may be greater than about 0.3 mm. The junction separation length of the silicone-based resin composition may be greater than about 0.35 mm. The junction separation length of the silicone-based resin composition may be greater than 0.4 mm. The junction separation length of the silicone-based resin composition may be greater than 0.45 mm. The junction separation length of the silicone- based resin composition may be greater than 0.5 mm. In the silicone-based resin composition, a maximum value of the junction separation length may be about 2 mm.

In the silicone-based resin composition, the junction separation length may be measured according to DIN EN 1465. Likewise, in the thermally conductive layer, the junction separation length may be measured according to DIN EN 1465.

Referring to FIG. 2, the lap shear strength of the silicone-based resin composition and a junction separation length may be measured by the following method.

The silicone-based resin composition is coated on a predetermined area of a first nickel plate 10 to a thickness of about 200 μm, and the second nickel plate 20 covers the coated silicone-based resin composition. Next, the silicone-based resin composition is cured at about 150°C for about 2 hours. The area coated with the silicone-based resin composition may be about 2.5 cm* 1.25 cm.

Next, the first and second nickel plates are pulled horizontally in opposite directions by a universal testing machine. Here, stress in the horizontal direction of the first and second nickel plates is measured according to the horizontally deformed length.

The lap shear strength may be a value obtained by dividing the maximum value of stress applied to the first and second nickel plates by the coating area of the silicone-based resin composition.

In addition, the junction separation length may be a length deformed in the horizontal direction under the maximum value of stress applied to the first and second nickel plates.

The lap shear strength of the thermally conductive layer and a junction separation length may be measured by the following method.

The heat dissipation part and the semiconductor package are pulled horizontally in opposite directions by a universal testing machine. Here, stress in a horizontal direction of the heat dissipation part and the semiconductor package is measured according to the horizontally deformed length.

The lap shear strength may be a value obtained by dividing a maximum value of stress applied to the heat dissipation part and the semiconductor package by a plane area of the thermally conductive layer.

In addition, the junction separation length may be a length deformed in the horizontal direction under the maximum value of stress applied to the heat dissipation part and the semiconductor package.

In addition, the thermally conductive layer may have a shear modulus.

The shear modulus is a value obtained by dividing the lap shear strength of the thermally conductive layer by the junction separation length.

The shear modulus may be calculated by the following equation:

[Equation 1]

Shear modulus = lap shear strength/junction separation length

The shear modulus of the thermally conductive layer may be about 0.3 N/mm³ to about 2.0 N/mm³. The shear modulus of the thermally conductive layer may be about 0.4 N/mm³ to about 1.8 N/mm³. The shear modulus of the thermally conductive layer may be about 0.5 N/mm³ to about 1.7 N/mm³.

In addition, the silicone-based resin composition may have the shear modulus.

The shear modulus of the silicone-based resin composition may be about 0.3 N/mm³ to about 2.0 N/mm³. The shear modulus of the silicone-based resin composition may be about 0.4 N/mm³ to about 1.8 N/mm³. The shear modulus of the silicone-based resin composition may be about 0.5 N/mm³ to about 1.7 N/mm³.

Since the silicone-based resin composition and the thermally conductive layer have the shear modulus, the silicone-based resin composition and the thermally conductive layer may suppress deformation and peeling due to shear stress when a thermal shock is applied to the thermally conductive layer.

That is, since the silicone-based resin composition has the shear modulus, deformation due to external thermal shock of the thermally conductive layer may be easily restored.

The silicone-based resin composition may have a coverage.

The coverage of the silicone-based resin composition may be about 85% or more. The coverage of the silicone-based resin composition may be about 90% or more. The coverage of the silicone-based resin composition may be about 92% or more.

The silicone-based resin composition may have a spread thickness.

The spread thickness of the silicone-based resin composition may be less than 200 μm. The spread thickness of the silicone-based resin composition may be about 100 μm to about 200 μm.

The coverage and the spread thickness may be measured by the following method.

About 1 g of the silicone-based resin composition is applied to an entire surface of a first silicon substrate having a size of about 27 mm x 27 mm. Next, a second silicon substrate equal to or larger than the first silicon substrate is placed on the coated silicone-based resin composition and compressed with a force of about 3 kgf. In a state of being compressed in such a manner, the silicone-based resin composition coated between the first silicon substrate and the second silicon substrate is temporarily cured at about 135°C for about 10 minutes. Next, the temporarily cured composition is cured at about 150°C for about 2 hours. Next, , the area of the first silicon substrate and the second silicon substrate in close contact is measured by the ultrasonic device (scanning acoustic tomography, ultrasonic flaw inspection system). The coverage is a ratio of an area in close contact with the second silicon substrate among the total area of the first silicon substrate.

In addition, a thickness of the cured resin composition layer may be the spread thickness.

Since the silicone-based resin composition has the coverage and spread thickness as described above, the thermally conductive layer may be in close contact with the semiconductor package and the heat dissipation part over a large area and may have high heat-conducting properties.

A viscosity of the silicone-based resin composition may be about 50 cPs to about 400 cPs. The viscosity of the silicone-based resin composition may be about 50 cPs to about 300 cPs. The viscosity of the silicone-based resin composition may be about 50 cPs to about 200 cPs. The viscosity of the silicone-based resin composition may be about 50 cPs to about 150 cPs.

The viscosity of the silicone-based resin composition may be measured by DIN EN ISO 3219 method at about 25°C using a rheometer MCR302 (manufacturer: Anton Paar GmbH) as a plate with a diameter of about 25 mm. Here, to measure the viscosity, a shear rate of about 10(l/s) may be applied.

The silicone-based resin composition has the above-described viscosity, thereby having an appropriate coverage and spread thickness.

A pot life of the silicone-based resin composition may exceed about 10 hours. The pot life of the silicone-based resin composition may be about 10 hours to about 15 hours. The pot life of the silicone-based resin composition may be about 10 hours to about 15 hours.

The pot life may be measured by the following method.

The silicone-based resin composition is allowed to stand at room temperature. Next, a time at which the viscosity of the silicone-based resin composition increases by 50% compared to an initial viscosity thereof is measured as the pot life.

The silicone-based resin composition may have a thermal conductivity.

The thermal conductivity of the silicone-based resin composition may be greater than about 5W/m K. The thermal conductivity of the silicone-based resin composition may be greater than about 5.5W/nrK. The thermal conductivity of the silicone-based resin composition may be greater than about 6W/m-K. The thermal conductivity of the silicone- based resin composition may be greater than about 6.5W/m K. A maximum value of the thermal conductivity of the silicone-based resin composition may be about 30W/m-K.

The thermal conductivity may be measured by the following method.

First, the silicone-based resin composition is molded by a hot press to have a size of about 30 mm><30 mm><4 mm, and then cured at about 150°C for about 2 hours to fabricate a sample. A thermal conductivity of the sample may be measured by IS022007-2 method.

In addition, a thermal conductivity of the thermally conductive layer may be greater than about 5W/m-K. The thermal conductivity of the thermally conductive layer may be greater than about 5.5W/m-K. The thermal conductivity of the thermally conductive layer may be greater than about 6W/m-K. The thermal conductivity of the thermally conductive layer may be greater than about 6.5W/m K. A maximum value of the thermal conductivity of the thermally conductive layer may be about 30W/m-K.

The silicone-based resin composition may have an appropriate lap shear strength. Accordingly, the thermally conductive layer may have an appropriate shear bonding force. In addition, the silicone-based resin composition for forming the thermally conductive layer may have an appropriate junction separation length.

Accordingly, the thermally conductive layer may have high adhesiveness even under shear stress. That is, since the thermally conductive layer has an appropriate shear bonding force and an appropriate junction separation length, an appropriate bonding strength to the semiconductor package and the heat dissipation part may be maintained even when shear stress is applied to the thermally conductive layer.

Accordingly, when a physical shock, such as a thermal shock, from the outside is applied to the semiconductor device according to an embodiment, a shear stress due to a thermal expansion rate difference between the heat dissipation part and the semiconductor package is applied to the thermally conductive layer.

Here, since the silicone-based resin composition has an appropriate lap shear strength and an appropriate junction separation length, it is possible to prevent peeling of the thermally conductive layer which may be caused by shear stress.

Accordingly, the semiconductor device and silicone-based resin composition according to embodiments may maintain improved heat dissipation performance.

In addition, the silicone-based resin composition may have an improved coverage and an appropriate spread thickness. Accordingly, the silicone-based resin composition may be evenly coated to a uniform thickness between the semiconductor package and the heat dissipation part. Accordingly, the semiconductor device and silicone-based resin composition according to embodiments may have improved heat dissipation performance.

Hereinafter, the present invention will be described in more detail with reference to Examples and Comparative Examples for the purpose of clarifying the effects of the present invention, but the present invention is not limited thereto.

Examples

Al : Poly siloxane compound represented by the above Chemical Formula 4, having a viscosity of polysiloxane compound at 23 °C 20000 cPs, and including a silicon-bonded alkenyl group

A2 : Hydrogen polysiloxane compound represented by the above Chemical Formula 6, having a viscosity of 1000 cPs at 23°C, and including a hydrogen group bonded to both terminals thereof

A3 : Hydrogen polysiloxane compound represented by the above Chemical Formula 8, having a viscosity of 1000 cPs at 23 °C, and including a hydrogen group bonded to a side chain thereof

Bl : Silver powder having a tap density of about 2.9 g/cm³, a specific surface area of about 0.9 m²/g, an average particle diameter (D50) of about 2 μm, an aspect ratio of 3 (square), and an Ig-loss of 0.4 wt% at about 538°C, and surface-treated with fatty acids

B2 : Silver powder having a tap density of about 6.4 g/cm³, a specific surface area of about 0.3 m²/g, an average particle diameter (D50) of about 3 μm, an aspect ratio of about 1.5 (spherical), and an Ig-loss of about 0.05 wt% at about 538°C C : 3-glycididoxy propyltrimethoxy silane

D : Platinum-divinyltetramethyldisiloxane complex

E : 1-ethynyl-l -cyclohexanol

The components were uniformly mixed at a speed of about 40 rμm by a planetary mixer at room temperature for 1 hour, as shown in Table 1 below, to prepare a silicone-based resin composition.

[Table 1]

1. Lap shear strength and junction separation length

An area of about 2.5 cmxl.25 cm of a first nickel plate was coated with the curable silicone resin composition to a thickness of about 200 μm, and a second nickel plate was covered with the coated composition. Next, in a state in which the first and second nickel plates were compressed with a weight of about 3 kgf, the compressed coating layer was temporarily cured at 135°C for about 10 minutes. The temporarily cured coating layer was cured at about 150°C for about 2 hours. Next, the lap shear strength and the junction separation length were measured according to DIN EN 1465 while tensioning the first nickel plate and the second nickel plate in opposite directions by a universal testing machine (tensile strength analyzer, manufacturer: ZwickRoell Gmbh).

2. Coverage and spread thickness

About 0.7 g of the silicone -based resin composition was coated on a fust silicon substrate having a size of about 27 mmx27 mm. Next, the coated composition layer was covered with a second silicon substrate having the same size as the first silicon substrate. Next, in a state in which a pressure of about 3 kgf was applied to the second silicon substrate, the compressed coating layer was temporarily cured at about 135°C for about 10 minutes. Next, the temporarily cured coating layer was cured at about 150°C for about 2 hours. Next, by means of SAT ultrasonic inspection equiμment and an image particle analyzer, the area of the first silicon substrate and the second silicon substrate in close contact through the cured coating layer was measured, and a ratio of the area in close contact to the entire plane area was derived.

3. Viscosity

The viscosity of a curable silicone resin composition was measured according to the DIN EN ISO 3219 method at about 25°C by means of a rheometer (product name: MCR302, manufacturer: Anton Paar GmbH) using a circular plate with a diameter of 25 mm. Here, the viscosity was measured at a shear rate of about 10 (1/s).

4. Pot life

A silicone-based resin composition according to an example was allowed to stand at room temperature, and a time at which the viscosity increased by about 50% compared to the initial viscosity was measured as a pot life.

5. Thermal conductivity A silicone-based resin composition according to an example was molded to a size of about 30 mmx30 mmx4 mm by a hot press and cured at about 150°C for about 2 hours, thereby fabricating a sample for measuring thermal conductivity. Next, the thermal conductivity was measured by a thermal conductivity analyzer (model: TPS-2500S, manufacturer: Hot Disk AB) according to the IS022007-2 method.

6. Thermal shock test

A thermal shock test was performed by repeating a test process of allowing to stand at - 40°C for 30 minutes and allowing to stand at 125°C for 30 minutes again about 500 times. After completion of the thermal shock test, a thermal conductivity was measured. 7. Reworkability

A silicone-based resin composition according to an example was kept frozen (-20 — 40°C) again after an initial dispensing operation. Upon rework, it was confirmed whether the stored composition was applied to a dispensing process.

[Table 2] As summarized in Table 2, the silicone-based resin compositions according to the examples had improved heat dissipation performance and durability. [Description of Symbols] circuit board 100 semiconductor package 200 conductive bumps 300 heat dissipation part 400 thermally conductive layer 500

Claims

[CLAIMS]

[Claim 1 ]

A semiconductor device, comprising: a semiconductor package; a heat dissipation part disposed on the semiconductor package; and a thermally conductive layer in direct contact with the semiconductor package and the heat dissipation part, wherein the thermally conductive layer comprises a silicone-based resin composition, wherein the silicone-based resin composition comprises an organic polysiloxane; a conductive filler; and a curing catalyst, and a lap shear strength measured according to DIN EN 1465 in the silicone-based resin composition is 0.30 N/mm² to 1.8 N/mm².

[Claim 2]

A method of fabricating a semiconductor device, the method comprising: disposing a semiconductor package; coating a silicone-based resin composition on the semiconductor package; disposing a heat dissipation part on the silicone-based resin composition; and curing the silicone-based resin composition to form a thermally conductive layer, wherein the silicone-based resin composition comprises an organic polysiloxane; a conductive filler; and a curing catalyst, and a lap shear strength measured according to DIN EN 1465 in the silicone-based resin composition is 0.30 N/mm² to 1.8 N/mm².

[Claim 3]

A silicone-based resin composition, comprising: an organic polysiloxane; a conductive filler; and a curing catalyst, wherein a lap shear strength measured according to DIN EN 1465 in the silicone -based resin composition is 0.30 N/mm² to 1.8 N/mm².

[Claim 4]

The silicone-based resin composition according to claim 3, wherein the conductive filler comprises a first thermally conductive powder having a tap density of less than 2.99 g/cm³; and a second thermally conductive powder having a tap density of greater than 3.01 g/cm³.

[Claim 5]

The silicone-based resin composition according to claim 4, wherein the first thermally conductive powder has a specific surface area of 0.5 m²/g to 1.6 m²/g, and the second thermally conductive powder has a specific surface area of 0.1 m²/g to 0.5 m²/g.

[Claim 6]

The silicone-based resin composition according to claim 5, wherein a weight ratio of the second thermally conductive powder to the first thermally conductive powder is 0.2 to 0.7.

[Claim 7]

The silicone-based resin composition according to claim 3, wherein a junction separation length measured according to DIN EN 1465 is 0.3 mm or more.

[Claim 8]

The silicone-based resin composition according to claim 7, wherein a shear modulus obtained by dividing the lap shear strength by the junction separation length is 0.4 N/mrn³ to 1.8 N/mm³.

[Claim 9]

The silicone-based resin composition according to claim 3, wherein a coverage measured by a measurement method below is 90% or more:

[measurement method] the silicone-based resin composition is coated in a weight of 0.7 g on a first silicon substrate having a size of 27 mm><27 mm, and then a second silicon substrate having a size equal to or larger than the first silicon substrate is placed on the coated silicone-based resin composition, and then the silicone-based resin composition is cured in a state of being compressed with a force of 3 kgf, and then an area of the first silicon substrate in close contact with the second silicon substrate by the silicone-based resin composition is derived, and the coverage is a ratio of an area of the first silicon substrate in close contact with the second silicon substrate compared to a plane area of the first silicon substrate.

[Claim 101

The silicone-based resin composition according to claim 9, wherein a spread thickness measured by a measurement method below is less than 200 μm:

[measurement method] the spread thickness is a thickness of a cured silicone-based resin composition layer disposed between the first silicon substrate and the second silicon substrate. [Claim 11 ]

The silicone-based resin composition according to claim 3, wherein a pot life of the silicone-based resin composition is 10 hours or more.