EP4084329A4 - Stack amplifier, radio frequency transceiver circuit, device and switch control method - Google Patents

Stack amplifier, radio frequency transceiver circuit, device and switch control method Download PDF

Info

Publication number
EP4084329A4
EP4084329A4 EP20916092.8A EP20916092A EP4084329A4 EP 4084329 A4 EP4084329 A4 EP 4084329A4 EP 20916092 A EP20916092 A EP 20916092A EP 4084329 A4 EP4084329 A4 EP 4084329A4
Authority
EP
European Patent Office
Prior art keywords
control method
radio frequency
switch control
transceiver circuit
frequency transceiver
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
EP20916092.8A
Other languages
German (de)
French (fr)
Other versions
EP4084329A1 (en
Inventor
Kefeng Han
Lei Lu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Huawei Technologies Co Ltd
Original Assignee
Huawei Technologies Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Huawei Technologies Co Ltd filed Critical Huawei Technologies Co Ltd
Publication of EP4084329A1 publication Critical patent/EP4084329A1/en
Publication of EP4084329A4 publication Critical patent/EP4084329A4/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F3/00Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/189High-frequency amplifiers, e.g. radio frequency amplifiers
    • H03F3/19High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
    • H03F3/195High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only in integrated circuits
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F1/00Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/08Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements
    • H03F1/22Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements by use of cascode coupling, i.e. earthed cathode or emitter stage followed by earthed grid or base stage respectively
    • H03F1/223Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements by use of cascode coupling, i.e. earthed cathode or emitter stage followed by earthed grid or base stage respectively with MOSFET's
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F3/00Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/45Differential amplifiers
    • H03F3/45071Differential amplifiers with semiconductor devices only
    • H03F3/45076Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier
    • H03F3/45179Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier using MOSFET transistors as the active amplifying circuit
    • H03F3/45183Long tailed pairs
    • H03F3/45188Non-folded cascode stages
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F2200/00Indexing scheme relating to amplifiers
    • H03F2200/294Indexing scheme relating to amplifiers the amplifier being a low noise amplifier [LNA]
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F2200/00Indexing scheme relating to amplifiers
    • H03F2200/451Indexing scheme relating to amplifiers the amplifier being a radio frequency amplifier
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F2200/00Indexing scheme relating to amplifiers
    • H03F2200/61Indexing scheme relating to amplifiers the cascode amplifier has more than one common gate stage
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F2200/00Indexing scheme relating to amplifiers
    • H03F2200/75Indexing scheme relating to amplifiers the amplifier stage being a common source configuration MOSFET
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F2203/00Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
    • H03F2203/45Indexing scheme relating to differential amplifiers
    • H03F2203/45662Indexing scheme relating to differential amplifiers the LC comprising inductive coupled loading elements
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F2203/00Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
    • H03F2203/45Indexing scheme relating to differential amplifiers
    • H03F2203/45731Indexing scheme relating to differential amplifiers the LC comprising a transformer

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Amplifiers (AREA)
  • Transceivers (AREA)
EP20916092.8A 2020-01-20 2020-01-20 Stack amplifier, radio frequency transceiver circuit, device and switch control method Pending EP4084329A4 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/CN2020/073243 WO2021146843A1 (en) 2020-01-20 2020-01-20 Stack amplifier, radio frequency transceiver circuit, device and switch control method

Publications (2)

Publication Number Publication Date
EP4084329A1 EP4084329A1 (en) 2022-11-02
EP4084329A4 true EP4084329A4 (en) 2022-12-28

Family

ID=76991939

Family Applications (1)

Application Number Title Priority Date Filing Date
EP20916092.8A Pending EP4084329A4 (en) 2020-01-20 2020-01-20 Stack amplifier, radio frequency transceiver circuit, device and switch control method

Country Status (3)

Country Link
EP (1) EP4084329A4 (en)
CN (1) CN114946122A (en)
WO (1) WO2021146843A1 (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN115102566B (en) * 2022-06-15 2023-08-08 南京英锐创电子科技有限公司 Wireless communication system and signal transceiver thereof

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20190115880A1 (en) * 2017-10-13 2019-04-18 Samsung Electronics Co., Ltd. Low-noise amplifier supporting beam-forming function and receiver including the same
US20200007088A1 (en) * 2012-12-28 2020-01-02 Psemi Corporation Constant VDS1 Bias Control for Stacked Transistor Configuration

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8779860B2 (en) * 2012-08-15 2014-07-15 Avago Technologies General Ip (Singapore) Ptd. Ltd. Power amplifier
CN102969995B (en) * 2012-11-23 2015-05-06 锐迪科创微电子(北京)有限公司 Dynamic offset control circuit applied to linear mode power amplifier
US9219447B2 (en) * 2013-09-11 2015-12-22 Qualcomm Incorporated Wideband bias circuits and methods
CN105515542B (en) * 2016-01-26 2019-01-25 广东工业大学 A kind of radio-frequency power amplifier of stacked structure
CN106230392A (en) * 2016-07-18 2016-12-14 东南大学 A kind of bias node adaptive High Linear envelope tracking power amplifier
US10056874B1 (en) * 2017-02-28 2018-08-21 Psemi Corporation Power amplifier self-heating compensation circuit
CN109167574A (en) * 2018-09-11 2019-01-08 西安交通大学 Stack power amplifier and its dynamic bias network

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20200007088A1 (en) * 2012-12-28 2020-01-02 Psemi Corporation Constant VDS1 Bias Control for Stacked Transistor Configuration
US20190115880A1 (en) * 2017-10-13 2019-04-18 Samsung Electronics Co., Ltd. Low-noise amplifier supporting beam-forming function and receiver including the same

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
See also references of WO2021146843A1 *

Also Published As

Publication number Publication date
CN114946122A (en) 2022-08-26
WO2021146843A1 (en) 2021-07-29
EP4084329A1 (en) 2022-11-02

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Effective date: 20221130

RIC1 Information provided on ipc code assigned before grant

Ipc: H03F 1/22 20060101ALI20221124BHEP

Ipc: H03F 3/45 20060101ALI20221124BHEP

Ipc: H03F 3/195 20060101ALI20221124BHEP

Ipc: H03F 3/16 20060101AFI20221124BHEP

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