EP4084329A4 - Stack amplifier, radio frequency transceiver circuit, device and switch control method - Google Patents
Stack amplifier, radio frequency transceiver circuit, device and switch control method Download PDFInfo
- Publication number
- EP4084329A4 EP4084329A4 EP20916092.8A EP20916092A EP4084329A4 EP 4084329 A4 EP4084329 A4 EP 4084329A4 EP 20916092 A EP20916092 A EP 20916092A EP 4084329 A4 EP4084329 A4 EP 4084329A4
- Authority
- EP
- European Patent Office
- Prior art keywords
- control method
- radio frequency
- switch control
- transceiver circuit
- frequency transceiver
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/189—High-frequency amplifiers, e.g. radio frequency amplifiers
- H03F3/19—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
- H03F3/195—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only in integrated circuits
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/08—Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements
- H03F1/22—Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements by use of cascode coupling, i.e. earthed cathode or emitter stage followed by earthed grid or base stage respectively
- H03F1/223—Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements by use of cascode coupling, i.e. earthed cathode or emitter stage followed by earthed grid or base stage respectively with MOSFET's
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/45—Differential amplifiers
- H03F3/45071—Differential amplifiers with semiconductor devices only
- H03F3/45076—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier
- H03F3/45179—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier using MOSFET transistors as the active amplifying circuit
- H03F3/45183—Long tailed pairs
- H03F3/45188—Non-folded cascode stages
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/294—Indexing scheme relating to amplifiers the amplifier being a low noise amplifier [LNA]
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/451—Indexing scheme relating to amplifiers the amplifier being a radio frequency amplifier
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/61—Indexing scheme relating to amplifiers the cascode amplifier has more than one common gate stage
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/75—Indexing scheme relating to amplifiers the amplifier stage being a common source configuration MOSFET
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
- H03F2203/45—Indexing scheme relating to differential amplifiers
- H03F2203/45662—Indexing scheme relating to differential amplifiers the LC comprising inductive coupled loading elements
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
- H03F2203/45—Indexing scheme relating to differential amplifiers
- H03F2203/45731—Indexing scheme relating to differential amplifiers the LC comprising a transformer
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Amplifiers (AREA)
- Transceivers (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
PCT/CN2020/073243 WO2021146843A1 (en) | 2020-01-20 | 2020-01-20 | Stack amplifier, radio frequency transceiver circuit, device and switch control method |
Publications (2)
Publication Number | Publication Date |
---|---|
EP4084329A1 EP4084329A1 (en) | 2022-11-02 |
EP4084329A4 true EP4084329A4 (en) | 2022-12-28 |
Family
ID=76991939
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
EP20916092.8A Pending EP4084329A4 (en) | 2020-01-20 | 2020-01-20 | Stack amplifier, radio frequency transceiver circuit, device and switch control method |
Country Status (3)
Country | Link |
---|---|
EP (1) | EP4084329A4 (en) |
CN (1) | CN114946122A (en) |
WO (1) | WO2021146843A1 (en) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN115102566B (en) * | 2022-06-15 | 2023-08-08 | 南京英锐创电子科技有限公司 | Wireless communication system and signal transceiver thereof |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20190115880A1 (en) * | 2017-10-13 | 2019-04-18 | Samsung Electronics Co., Ltd. | Low-noise amplifier supporting beam-forming function and receiver including the same |
US20200007088A1 (en) * | 2012-12-28 | 2020-01-02 | Psemi Corporation | Constant VDS1 Bias Control for Stacked Transistor Configuration |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8779860B2 (en) * | 2012-08-15 | 2014-07-15 | Avago Technologies General Ip (Singapore) Ptd. Ltd. | Power amplifier |
CN102969995B (en) * | 2012-11-23 | 2015-05-06 | 锐迪科创微电子(北京)有限公司 | Dynamic offset control circuit applied to linear mode power amplifier |
US9219447B2 (en) * | 2013-09-11 | 2015-12-22 | Qualcomm Incorporated | Wideband bias circuits and methods |
CN105515542B (en) * | 2016-01-26 | 2019-01-25 | 广东工业大学 | A kind of radio-frequency power amplifier of stacked structure |
CN106230392A (en) * | 2016-07-18 | 2016-12-14 | 东南大学 | A kind of bias node adaptive High Linear envelope tracking power amplifier |
US10056874B1 (en) * | 2017-02-28 | 2018-08-21 | Psemi Corporation | Power amplifier self-heating compensation circuit |
CN109167574A (en) * | 2018-09-11 | 2019-01-08 | 西安交通大学 | Stack power amplifier and its dynamic bias network |
-
2020
- 2020-01-20 CN CN202080093167.0A patent/CN114946122A/en active Pending
- 2020-01-20 WO PCT/CN2020/073243 patent/WO2021146843A1/en unknown
- 2020-01-20 EP EP20916092.8A patent/EP4084329A4/en active Pending
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20200007088A1 (en) * | 2012-12-28 | 2020-01-02 | Psemi Corporation | Constant VDS1 Bias Control for Stacked Transistor Configuration |
US20190115880A1 (en) * | 2017-10-13 | 2019-04-18 | Samsung Electronics Co., Ltd. | Low-noise amplifier supporting beam-forming function and receiver including the same |
Non-Patent Citations (1)
Title |
---|
See also references of WO2021146843A1 * |
Also Published As
Publication number | Publication date |
---|---|
CN114946122A (en) | 2022-08-26 |
WO2021146843A1 (en) | 2021-07-29 |
EP4084329A1 (en) | 2022-11-02 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
STAA | Information on the status of an ep patent application or granted ep patent |
Free format text: STATUS: THE INTERNATIONAL PUBLICATION HAS BEEN MADE |
|
PUAI | Public reference made under article 153(3) epc to a published international application that has entered the european phase |
Free format text: ORIGINAL CODE: 0009012 |
|
STAA | Information on the status of an ep patent application or granted ep patent |
Free format text: STATUS: REQUEST FOR EXAMINATION WAS MADE |
|
17P | Request for examination filed |
Effective date: 20220726 |
|
AK | Designated contracting states |
Kind code of ref document: A1 Designated state(s): AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR |
|
A4 | Supplementary search report drawn up and despatched |
Effective date: 20221130 |
|
RIC1 | Information provided on ipc code assigned before grant |
Ipc: H03F 1/22 20060101ALI20221124BHEP Ipc: H03F 3/45 20060101ALI20221124BHEP Ipc: H03F 3/195 20060101ALI20221124BHEP Ipc: H03F 3/16 20060101AFI20221124BHEP |
|
DAV | Request for validation of the european patent (deleted) | ||
DAX | Request for extension of the european patent (deleted) |