EP3864708A1 - Procede de determination de la technologie d'une cellule photovoltaïque, procede de tri, procede de recyclage et dispositif associes - Google Patents
Procede de determination de la technologie d'une cellule photovoltaïque, procede de tri, procede de recyclage et dispositif associesInfo
- Publication number
- EP3864708A1 EP3864708A1 EP19780262.2A EP19780262A EP3864708A1 EP 3864708 A1 EP3864708 A1 EP 3864708A1 EP 19780262 A EP19780262 A EP 19780262A EP 3864708 A1 EP3864708 A1 EP 3864708A1
- Authority
- EP
- European Patent Office
- Prior art keywords
- technology
- photovoltaic cell
- photovoltaic
- determining
- chemical species
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 238000005516 engineering process Methods 0.000 title claims abstract description 76
- 238000000034 method Methods 0.000 title claims abstract description 64
- 238000004064 recycling Methods 0.000 title claims abstract description 11
- 239000013626 chemical specie Substances 0.000 claims abstract description 34
- 238000001228 spectrum Methods 0.000 claims abstract description 23
- 238000000608 laser ablation Methods 0.000 claims abstract description 11
- 238000005259 measurement Methods 0.000 claims description 26
- 238000002536 laser-induced breakdown spectroscopy Methods 0.000 claims description 21
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 19
- 229910052698 phosphorus Inorganic materials 0.000 claims description 19
- 239000011574 phosphorus Substances 0.000 claims description 19
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 18
- 229910052796 boron Inorganic materials 0.000 claims description 18
- 229910052710 silicon Inorganic materials 0.000 claims description 17
- 239000010703 silicon Substances 0.000 claims description 17
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 16
- 229910004613 CdTe Inorganic materials 0.000 claims description 11
- 238000004458 analytical method Methods 0.000 claims description 10
- 229910052793 cadmium Inorganic materials 0.000 claims description 8
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 claims description 8
- 230000003287 optical effect Effects 0.000 claims description 8
- 229910052714 tellurium Inorganic materials 0.000 claims description 7
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 claims description 7
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 4
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 4
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 claims description 4
- 238000004590 computer program Methods 0.000 claims description 4
- 229910052802 copper Inorganic materials 0.000 claims description 4
- 239000010949 copper Substances 0.000 claims description 4
- 229910052733 gallium Inorganic materials 0.000 claims description 4
- 229910052738 indium Inorganic materials 0.000 claims description 4
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 4
- 229910052711 selenium Inorganic materials 0.000 claims description 4
- 239000011669 selenium Substances 0.000 claims description 4
- 238000012995 silicone-based technology Methods 0.000 claims description 3
- 239000000463 material Substances 0.000 description 18
- 238000001514 detection method Methods 0.000 description 5
- 239000000758 substrate Substances 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 229910021419 crystalline silicon Inorganic materials 0.000 description 3
- 230000006870 function Effects 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 230000005855 radiation Effects 0.000 description 3
- 238000004364 calculation method Methods 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 238000004993 emission spectroscopy Methods 0.000 description 2
- 239000008393 encapsulating agent Substances 0.000 description 2
- BFMKFCLXZSUVPI-UHFFFAOYSA-N ethyl but-3-enoate Chemical compound CCOC(=O)CC=C BFMKFCLXZSUVPI-UHFFFAOYSA-N 0.000 description 2
- 230000035945 sensitivity Effects 0.000 description 2
- 238000004611 spectroscopical analysis Methods 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 229910013380 LiBS Inorganic materials 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 238000010921 in-depth analysis Methods 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910000510 noble metal Inorganic materials 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 238000005211 surface analysis Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F71/00—Manufacture or treatment of devices covered by this subclass
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J3/00—Spectrometry; Spectrophotometry; Monochromators; Measuring colours
- G01J3/28—Investigating the spectrum
- G01J3/443—Emission spectrometry
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/62—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light
- G01N21/71—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light thermally excited
- G01N21/718—Laser microanalysis, i.e. with formation of sample plasma
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02S—GENERATION OF ELECTRIC POWER BY CONVERSION OF INFRARED RADIATION, VISIBLE LIGHT OR ULTRAVIOLET LIGHT, e.g. USING PHOTOVOLTAIC [PV] MODULES
- H02S50/00—Monitoring or testing of PV systems, e.g. load balancing or fault identification
- H02S50/10—Testing of PV devices, e.g. of PV modules or single PV cells
- H02S50/15—Testing of PV devices, e.g. of PV modules or single PV cells using optical means, e.g. using electroluminescence
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F10/00—Individual photovoltaic cells, e.g. solar cells
- H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
- H10F10/14—Photovoltaic cells having only PN homojunction potential barriers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F10/00—Individual photovoltaic cells, e.g. solar cells
- H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
- H10F10/16—Photovoltaic cells having only PN heterojunction potential barriers
- H10F10/164—Photovoltaic cells having only PN heterojunction potential barriers comprising heterojunctions with Group IV materials, e.g. ITO/Si or GaAs/SiGe photovoltaic cells
- H10F10/165—Photovoltaic cells having only PN heterojunction potential barriers comprising heterojunctions with Group IV materials, e.g. ITO/Si or GaAs/SiGe photovoltaic cells the heterojunctions being Group IV-IV heterojunctions, e.g. Si/Ge, SiGe/Si or Si/SiC photovoltaic cells
- H10F10/166—Photovoltaic cells having only PN heterojunction potential barriers comprising heterojunctions with Group IV materials, e.g. ITO/Si or GaAs/SiGe photovoltaic cells the heterojunctions being Group IV-IV heterojunctions, e.g. Si/Ge, SiGe/Si or Si/SiC photovoltaic cells the Group IV-IV heterojunctions being heterojunctions of crystalline and amorphous materials, e.g. silicon heterojunction [SHJ] photovoltaic cells
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F19/00—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F19/00—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules
- H10F19/30—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules comprising thin-film photovoltaic cells
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F71/00—Manufacture or treatment of devices covered by this subclass
- H10F71/121—The active layers comprising only Group IV materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F71/00—Manufacture or treatment of devices covered by this subclass
- H10F71/137—Batch treatment of the devices
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Definitions
- the technical field of the invention is that of sorting and recycling of photovoltaic modules
- the present invention relates to a process for determining the technology of a photovoltaic cell and in particular a process in which a LIBS measurement is performed.
- the invention also relates to a sorting process and a recycling process for at least one photovoltaic module using such a determination process as well as the associated device.
- the oldest modules are dismantled and then stored or dismantled.
- the easiest materials to recover are recycled.
- This is the aluminum frame and the glass.
- the most commonly used means of dismantling is grinding of the entire photovoltaic module (after removing the aluminum frame beforehand)
- the glass fraction, representing 80% of the module's mass is then separated from the rest of the ground material and then recycled.
- this method does not make it possible to recover the different layers which constitute the photovoltaic module separately (see FIG. 1).
- the materials do not maintain their integrity and are contaminated.
- the materials constituting the photovoltaic modules are therefore recovered in the form of a powder whose purity is greatly altered.
- sorting by technology is impossible because of the small size of silicon, the different technologies of photovoltaic cells are therefore mixed. The separation of the different components is then tedious and generally accompanied by a high cost.
- sorting by technology before the grinding stage is impossible because no follow-up has been carried out on the existing modules.
- patent CN 103085116 deals with the dismantling of the different layers of a photovoltaic module by passing a metallic wire heated in EVA (Ethyl Vinyl Acetate). Others are looking to make modules made of materials that will be more easily dismantled than the materials that make up today's modules. But no convincing method has so far been presented.
- EVA Ethyl Vinyl Acetate
- the invention offers a solution to the problems mentioned above, by allowing analysis by laser ablation: LIBS (for Laser Induced Breakdown Spectroscopy in English).
- a first aspect of the invention relates to a method for determining the technology of a photovoltaic cell among the silicon-based technologies, the CdTe type technology and the CIGS technology comprising:
- a step of measurement by laser ablation of the photovoltaic cell comprising at least one laser pulse, preferably a plurality laser pulses, so as to obtain a spectrum characteristic of the chemical species present in the photovoltaic cell to be analyzed;
- This analysis technique uses a short pulse laser to create plasma on the surface of a sample.
- the radiation thus emitted is characteristic of the chemical species composing the ablated material and can be analyzed by optical spectroscopy.
- characteristic spectrum is understood to mean at least one curve, preferably a plurality of curves, said curve or curves comprising one or more peaks and allowing, via the wavelength associated with each peak, the identification of the emitting species and via the surface under the curve associated with each peak the quantity of matter.
- the method according to a first aspect of the invention may have one or more complementary characteristics among the following, considered individually or according to all technically possible combinations.
- the photovoltaic cell is considered to be a photovoltaic cell of n-type technology
- the photovoltaic cell is considered to be a p-type photovoltaic cell
- the photovoltaic cell is considered to be a heterojunction type photovoltaic cell.
- a chemical species shows that the intensity of the spectrum at the frequency associated with the chemical species in question is greater than a threshold value.
- the threshold could for example be set at
- the photovoltaic cell is considered to be a photovoltaic cell of CdTe technology
- the photovoltaic cell is considered to be a C1GS photovoltaic cell
- the step of determining, from said spectrum, the technology of the photovoltaic cell comprises:
- the determination of the technology of a photovoltaic cell can be made using a single parameter.
- the measurement step by laser ablation implements laser-induced plasma spectrometry (also called L1BS for “Laser Induced Breakdown Spectroscopy” in English).
- a second aspect of the invention relates to a method for sorting at least one photovoltaic module according to the technology of the cells included in said module, comprising a step of determining the technology of the photovoltaic cells of the photovoltaic module using a determination method according to a first aspect of the invention.
- the modules can be sorted according to the technology of the photovoltaic cells that compose it.
- the step of determining the technology of the photovoltaic cells of the photovoltaic module using a determination method according to a first aspect of the invention is implemented on only part of these cells, or even a single cell.
- the sorting method comprises, before the step of determining the technology of the photovoltaic cells of the photovoltaic module, a step of separating the layers making up the photovoltaic module.
- components such as the aluminum frame or even the junction box can be removed before the step of determining the technology of the photovoltaic module.
- a third aspect of the invention relates to a method for recycling at least one photovoltaic module comprising a sorting step implementing a method according to a second aspect of the invention.
- a fourth aspect of the invention relates to a device comprising a laser, an optical spectrometer and means adapted to carry out a method according to a first, a second or a third aspect of the invention.
- a fifth aspect of the invention relates to a computer program comprising instructions which lead the device according to a fourth aspect of the invention to execute a method according to a first, a second or a third aspect of the invention.
- a sixth aspect of the invention relates to a computer-readable medium, on which the computer program is recorded according to a fifth aspect of the invention.
- FIG. 1 shows a schematic representation of the composition of a photovoltaic module.
- FIG. 2 shows a schematic representation of a flowchart of an embodiment of a method according to a first aspect of the invention.
- FIG. 3 shows a schematic representation of an L1BS measurement performed on a p-type cell in an embodiment of a method according to a first aspect of the invention.
- - Fig 4 shows a phosphorus doping profile of a p-type cell and boron of an n-type cell.
- FIG. 5 shows an optical spectrum of an n-type cell obtained by a LIBS measurement.
- FIG. 6 shows an optical spectrum of a p-type cell obtained by a LIBS measurement.
- FIG. 7 shows a step of determining and sorting using an embodiment of a method according to a second aspect of the invention.
- FIG. 8 shows a schematic representation of an embodiment of a method according to a second aspect of the invention.
- a first aspect of the invention illustrated in FIG. 2 relates to a method 100 for determining the technology of a photovoltaic cell.
- photovoltaic modules contain photovoltaic cells which can most often be divided into one of the following categories:
- p-type cells based on a crystalline silicon substrate doped with Boron (so-called homojunction cells designated "p-type" cells);
- n-type cells ⁇ based on a crystalline silicon substrate doped with phosphorus (so-called homojunction cells designated “n-type” cells);
- H ET heterojunction
- CdTe type cadmium and tellurium - cells having a thin film type technology based on CdTe (cadmium and tellurium - cells called “CdTe type”);
- GIGS type copper, indium, gallium and selenium - cells
- the method 100 comprises a step E1 of measuring by laser ablation of the photovoltaic cell comprising at least one laser pulse, preferably a plurality of laser pulses, so as to obtain a spectrum characteristic of the chemical species present in the photovoltaic cell to be analyzed (provided that said species is in sufficient quantity to be measured).
- the measurement step by laser ablation implements laser-induced plasma spectrometry (also called L1BS for “Laser Induced Breakdown Spectroscopy” in English).
- LIBS consists in subjecting the material to be analyzed to a short laser pulse so as to ablate part of the material and to create a plasma on the surface of said material.
- the radiation emitted during this process is characteristic of the chemical species composing the material ablated by the laser pulse.
- the radiation can therefore be analyzed by optical spectroscopy.
- the number of laser pulses during the measurement can be varied so as to perform a surface analysis (when a low number of laser pulses is used) or a deep analysis (when a high number of laser pulses is used used).
- the measurement step by laser ablation comprises a plurality of laser pulses.
- This plurality of pulses makes it possible to pass through several layers of material (and possibly the encapsulant layer, the anti-reflection layer, etc., when the cell is integrated in a photovoltaic module) and to carry out a LIBS measurement on integrated photovoltaic cells. in modules still having the glass on the front face, the latter being able to be penetrated by the application of a plurality of laser pulses.
- the power of the laser will then have to be adapted accordingly.
- the method 100 also comprises a step E2 of determining, from said spectrum, the technology of the photovoltaic cell.
- each chemical species is associated with at least one wavelength. It is therefore possible to detect the presence of a chemical species from the intensity of the spectrum at the wavelength or at the wavelengths corresponding to said species.
- Such a spectrum is illustrated in FIG. 5 for a plurality of laser pulses (or shots) in the case of an n-type cell on which two peaks associated with silicon and a peak associated with boron are visible.
- the photovoltaic cell when boron and silicon are present among the determined chemical species, the photovoltaic cell is considered to be a photovoltaic cell of n-type technology. Indeed, the sensitivity of the LIBS measurement does not make it possible to measure the low phosphorus content at the heart of the photovoltaic cell while it will make it possible to detect boron whose content in the front face is much higher. In general, for a total thickness of 0.8 ⁇ m, the boron content of the first 0.3 ⁇ m is between 300ppmwt and 200ppmwt, which corresponds to quantities detectable by the LIBS measurement.
- the photovoltaic cell is considered to be a photovoltaic cell of p-type technology.
- the sensitivity of the LIBS measurement does not make it possible to measure the low boron content at the heart of the photovoltaic cell while it will make it possible to detect phosphorus whose content in the front face is much higher.
- the phosphorus content of the first 0.1 pm is between 0.07% and 1.3% which corresponds to quantities detectable by the L1BS measurement.
- the chemical species detected is that present on the surface of the photovoltaic cell which is of a doping opposite to that of the substrate (" bulk ”) which characterizes globally the type of cell technology.
- the photovoltaic cell is considered to be a photovoltaic cell of HET type technology.
- this type of module is mainly composed of silicon and the dopant contents (boron and phosphorus) are too low to be detectable by the LiBS measurement.
- the photovoltaic cell is considered to be a photovoltaic cell of CdTe technology.
- the determination is only carried out on the presence of cadmium, the latter being more emissive than tellurium and therefore more easily detectable by emission spectroscopy.
- the photovoltaic cell is considered to be a photovoltaic cell of CIGS technology.
- the step E2 of determining the technology of the photovoltaic cell comprises a sub-step of determining the technology of the photovoltaic cell from the value of the analysis parameter x.
- the photovoltaic cell is considered to be a photovoltaic cell of n type technology (provided the value [B] is significant, that is to say above a threshold value , e.g. a value corresponding to the detection threshold of the LIBS measurement).
- a threshold value e.g. a value corresponding to the detection threshold of the LIBS measurement.
- the photovoltaic cell is considered to be a photovoltaic cell of p-type technology (provided the value [P] is significant, that is to say above a value threshold, e.g. a value corresponding to the detection threshold of the LIBS measurement).
- a method 100 according to a first aspect of the invention makes it possible to determine the technology of a photovoltaic cell. It can then be interesting to use this information to sort and possibly recycle the photovoltaic modules composed of said cells.
- a second aspect of the invention illustrated in Figure 7 relates to a method of sorting at at least one lay otovol module as a function of the technology of the photovoltaic cells composing said module comprising a step of determining the technology of the photovoltaic cells of the photovoltaic module using a method 100 of determination according to a first aspect of the invention .
- a conveyor belt can cause the modules to be sorted on the site for determining the photovoltaic cell technology of said photovoltaic module, then, depending on the result, the module will be redirected to an adequate conveyor belt, after which recycling of the materials suitable for each cell technology can be performed.
- the sorting is carried out between modules comprising p-type cells and modules comprising n-type cells, but those skilled in the art will understand from the above that the sorting can be done by taking into account modules comprising CdTe or CIGS type cells.
- the method according to a second aspect of the invention comprises, before the step of measuring by laser ablation, a step of separating the layers making up the photovoltaic module.
- the step of determining the technology of the photovoltaic cells of the photovoltaic module using a determination method according to a first aspect of the invention is implemented on a part only these cells, or even a single cell.
- the technology of a module only requires the measurement of a part of the cells, which makes it possible to speed up the sorting.
- a third aspect of the invention relates to a method for recycling at least one photovoltaic module, characterized in that it comprises a sorting step implementing a method according to a second aspect of the invention.
- a fourth aspect of the invention relates to a device comprising a laser and an optical spectrometer so as to be able to perform a LIBS measurement.
- the device also comprises means suitable for carrying out the method according to a first aspect, a second aspect or a third aspect of the invention.
- the device comprises a calculation means (for example a processor, an FPGA or an ASIC card) associated with a memory.
- the memory can in particular contain the instructions as well as the data necessary for the execution of a method 100 according to a first aspect, a second aspect or a third aspect of the invention.
- the calculation means also comprises means of connection to an optical spectrometer and to a laser so as to be able to carry out a LIBS measurement as detailed above.
- the device comprises a transport system (for example a conveyor belt) making it possible to transport a module from a first point where the determination of the technology of the cells composing said module will be carried out at a second point where the sorting depending on what technology will be performed.
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- Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Health & Medical Sciences (AREA)
- General Physics & Mathematics (AREA)
- Analytical Chemistry (AREA)
- Nuclear Medicine, Radiotherapy & Molecular Imaging (AREA)
- Life Sciences & Earth Sciences (AREA)
- Chemical & Material Sciences (AREA)
- Plasma & Fusion (AREA)
- Biochemistry (AREA)
- General Health & Medical Sciences (AREA)
- Optics & Photonics (AREA)
- Immunology (AREA)
- Pathology (AREA)
- Engineering & Computer Science (AREA)
- Investigating, Analyzing Materials By Fluorescence Or Luminescence (AREA)
- Other Investigation Or Analysis Of Materials By Electrical Means (AREA)
Abstract
Description
Claims
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR1859301A FR3087049A1 (fr) | 2018-10-08 | 2018-10-08 | Procede de determination de la technologie d'une cellule photovoltaique, procede de tri, procede de recyclage et dispositif associes |
| PCT/EP2019/077148 WO2020074470A1 (fr) | 2018-10-08 | 2019-10-08 | Procede de determination de la technologie d'une cellule photovoltaïque, procede de tri, procede de recyclage et dispositif associes |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| EP3864708A1 true EP3864708A1 (fr) | 2021-08-18 |
Family
ID=66286376
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| EP19780262.2A Withdrawn EP3864708A1 (fr) | 2018-10-08 | 2019-10-08 | Procede de determination de la technologie d'une cellule photovoltaïque, procede de tri, procede de recyclage et dispositif associes |
Country Status (3)
| Country | Link |
|---|---|
| EP (1) | EP3864708A1 (fr) |
| FR (1) | FR3087049A1 (fr) |
| WO (1) | WO2020074470A1 (fr) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114798490B (zh) * | 2022-05-05 | 2024-02-06 | 赣州爱康光电科技有限公司 | 一种光伏电池片的分选装置 |
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| ES2134164B1 (es) * | 1997-12-10 | 2000-05-16 | Univ Malaga | Metodo computerizado de analisis mediante espectroscopia de plasmas producidos por laser para el control de calidad de celulas solares. |
| US7763820B1 (en) * | 2003-01-27 | 2010-07-27 | Spectramet, Llc | Sorting pieces of material based on photonic emissions resulting from multiple sources of stimuli |
| US9061369B2 (en) * | 2009-11-03 | 2015-06-23 | Applied Spectra, Inc. | Method for real-time optical diagnostics in laser ablation and laser processing of layered and structured materials |
| US8554353B2 (en) * | 2011-12-14 | 2013-10-08 | Gwangju Institute Of Science And Technology | Fabrication system of CIGS thin film solar cell equipped with real-time analysis facilities for profiling the elemental components of CIGS thin film using laser-induced breakdown spectroscopy |
| CN103085116B (zh) | 2013-01-15 | 2015-01-21 | 上海交通大学 | 太阳能电池板回收处理中eva层电热丝切割装置 |
| FR3017551B1 (fr) * | 2014-02-20 | 2016-03-11 | Recyclage Valorisation Photovoltaique R V P | Procede et installation de recyclage de panneaux photovoltaiques |
| CN107107122B (zh) * | 2014-06-23 | 2019-07-23 | Tsi公司 | 利用libs光谱的快速材料分析 |
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2018
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2019
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| Publication number | Publication date |
|---|---|
| WO2020074470A1 (fr) | 2020-04-16 |
| FR3087049A1 (fr) | 2020-04-10 |
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