EP3455911A4 - Iii-v chip preparation and integration in silicon photonics - Google Patents
Iii-v chip preparation and integration in silicon photonics Download PDFInfo
- Publication number
- EP3455911A4 EP3455911A4 EP17796852.6A EP17796852A EP3455911A4 EP 3455911 A4 EP3455911 A4 EP 3455911A4 EP 17796852 A EP17796852 A EP 17796852A EP 3455911 A4 EP3455911 A4 EP 3455911A4
- Authority
- EP
- European Patent Office
- Prior art keywords
- integration
- iii
- silicon photonics
- chip preparation
- chip
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/0235—Method for mounting laser chips
- H01S5/02355—Fixing laser chips on mounts
- H01S5/0236—Fixing laser chips on mounts using an adhesive
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B6/122—Basic optical elements, e.g. light-guiding paths
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B6/13—Integrated optical circuits characterised by the manufacturing method
- G02B6/136—Integrated optical circuits characterised by the manufacturing method by etching
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/24—Coupling light guides
- G02B6/42—Coupling light guides with opto-electronic elements
- G02B6/4201—Packages, e.g. shape, construction, internal or external details
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/02—Bonding areas ; Manufacturing methods related thereto
- H01L24/03—Manufacturing methods
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/0225—Out-coupling of light
- H01S5/02257—Out-coupling of light using windows, e.g. specially adapted for back-reflecting light to a detector inside the housing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/0235—Method for mounting laser chips
- H01S5/02375—Positioning of the laser chips
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B2006/12083—Constructional arrangements
- G02B2006/12097—Ridge, rib or the like
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S2301/00—Functional characteristics
- H01S2301/17—Semiconductor lasers comprising special layers
- H01S2301/176—Specific passivation layers on surfaces other than the emission facet
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/0206—Substrates, e.g. growth, shape, material, removal or bonding
- H01S5/0217—Removal of the substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/0233—Mounting configuration of laser chips
- H01S5/0234—Up-side down mountings, e.g. Flip-chip, epi-side down mountings or junction down mountings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/0235—Method for mounting laser chips
- H01S5/02355—Fixing laser chips on mounts
- H01S5/0237—Fixing laser chips on mounts by soldering
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Dicing (AREA)
- Semiconductor Lasers (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US201662334895P | 2016-05-11 | 2016-05-11 | |
PCT/US2017/032189 WO2017197132A1 (en) | 2016-05-11 | 2017-05-11 | Iii-v chip preparation and integration in silicon photonics |
Publications (2)
Publication Number | Publication Date |
---|---|
EP3455911A1 EP3455911A1 (en) | 2019-03-20 |
EP3455911A4 true EP3455911A4 (en) | 2020-04-15 |
Family
ID=65351634
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
EP17796852.6A Withdrawn EP3455911A4 (en) | 2016-05-11 | 2017-05-11 | Iii-v chip preparation and integration in silicon photonics |
Country Status (2)
Country | Link |
---|---|
EP (1) | EP3455911A4 (en) |
CN (1) | CN109417266B (en) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2022083779A (en) * | 2020-11-25 | 2022-06-06 | 富士通オプティカルコンポーネンツ株式会社 | Optical device, optical communication apparatus, and method for manufacturing optical device |
CN114649225A (en) * | 2020-12-17 | 2022-06-21 | 武汉新芯集成电路制造有限公司 | Semiconductor device and method for manufacturing the same |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20080219309A1 (en) * | 2007-03-06 | 2008-09-11 | Sanyo Electric Co., Ltd. | Method of fabricating semiconductor laser diode apparatus and semiconductor laser diode apparatus |
US20150229108A1 (en) * | 2014-02-10 | 2015-08-13 | Soraa Laser Diode, Inc. | Manufacturable multi-emitter laser diode |
US9209596B1 (en) * | 2014-02-07 | 2015-12-08 | Soraa Laser Diode, Inc. | Manufacturing a laser diode device from a plurality of gallium and nitrogen containing substrates |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3658426B2 (en) * | 1995-01-23 | 2005-06-08 | 株式会社日立製作所 | Optical semiconductor device |
JP2008252069A (en) * | 2007-03-06 | 2008-10-16 | Sanyo Electric Co Ltd | Method for fabricating semiconductor laser element, and the semiconductor laser element |
US9923105B2 (en) * | 2013-10-09 | 2018-03-20 | Skorpios Technologies, Inc. | Processing of a direct-bandgap chip after bonding to a silicon photonic device |
CN101872744B (en) * | 2010-06-03 | 2012-12-26 | 清华大学 | Method for producing a compound semiconductor MMIC (Monolithic Microwave Integrated Circuit) chip on silicon substrate |
JP2015510279A (en) * | 2012-03-14 | 2015-04-02 | コーニンクレッカ フィリップス エヌ ヴェ | VCSEL module and manufacturing method thereof |
-
2017
- 2017-05-11 CN CN201780043053.3A patent/CN109417266B/en active Active
- 2017-05-11 EP EP17796852.6A patent/EP3455911A4/en not_active Withdrawn
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20080219309A1 (en) * | 2007-03-06 | 2008-09-11 | Sanyo Electric Co., Ltd. | Method of fabricating semiconductor laser diode apparatus and semiconductor laser diode apparatus |
US9209596B1 (en) * | 2014-02-07 | 2015-12-08 | Soraa Laser Diode, Inc. | Manufacturing a laser diode device from a plurality of gallium and nitrogen containing substrates |
US20150229108A1 (en) * | 2014-02-10 | 2015-08-13 | Soraa Laser Diode, Inc. | Manufacturable multi-emitter laser diode |
Non-Patent Citations (1)
Title |
---|
See also references of WO2017197132A1 * |
Also Published As
Publication number | Publication date |
---|---|
CN109417266A (en) | 2019-03-01 |
EP3455911A1 (en) | 2019-03-20 |
CN109417266B (en) | 2021-05-07 |
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Legal Events
Date | Code | Title | Description |
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STAA | Information on the status of an ep patent application or granted ep patent |
Free format text: STATUS: THE INTERNATIONAL PUBLICATION HAS BEEN MADE |
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PUAI | Public reference made under article 153(3) epc to a published international application that has entered the european phase |
Free format text: ORIGINAL CODE: 0009012 |
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STAA | Information on the status of an ep patent application or granted ep patent |
Free format text: STATUS: REQUEST FOR EXAMINATION WAS MADE |
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17P | Request for examination filed |
Effective date: 20181113 |
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AK | Designated contracting states |
Kind code of ref document: A1 Designated state(s): AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR |
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AX | Request for extension of the european patent |
Extension state: BA ME |
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STAA | Information on the status of an ep patent application or granted ep patent |
Free format text: STATUS: REQUEST FOR EXAMINATION WAS MADE |
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DAV | Request for validation of the european patent (deleted) | ||
DAX | Request for extension of the european patent (deleted) | ||
RIC1 | Information provided on ipc code assigned before grant |
Ipc: H01S 5/02 20060101AFI20191130BHEP |
|
A4 | Supplementary search report drawn up and despatched |
Effective date: 20200312 |
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RIC1 | Information provided on ipc code assigned before grant |
Ipc: H01S 5/02 20060101AFI20200306BHEP |
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STAA | Information on the status of an ep patent application or granted ep patent |
Free format text: STATUS: THE APPLICATION IS DEEMED TO BE WITHDRAWN |
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18D | Application deemed to be withdrawn |
Effective date: 20211201 |