EP3439289A4 - Imaging element and imaging device - Google Patents

Imaging element and imaging device Download PDF

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Publication number
EP3439289A4
EP3439289A4 EP17773991.9A EP17773991A EP3439289A4 EP 3439289 A4 EP3439289 A4 EP 3439289A4 EP 17773991 A EP17773991 A EP 17773991A EP 3439289 A4 EP3439289 A4 EP 3439289A4
Authority
EP
European Patent Office
Prior art keywords
imaging
imaging device
imaging element
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
EP17773991.9A
Other languages
German (de)
French (fr)
Other versions
EP3439289B1 (en
EP3439289A1 (en
Inventor
Shigeru Matsumoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nikon Corp
Original Assignee
Nikon Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nikon Corp filed Critical Nikon Corp
Publication of EP3439289A1 publication Critical patent/EP3439289A1/en
Publication of EP3439289A4 publication Critical patent/EP3439289A4/en
Application granted granted Critical
Publication of EP3439289B1 publication Critical patent/EP3439289B1/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14636—Interconnect structures
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/481—Internal lead connections, e.g. via connections, feedthrough structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/1462—Coatings
    • H01L27/14621—Colour filter arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14625—Optical elements or arrangements associated with the device
    • H01L27/14627—Microlenses
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03M—CODING; DECODING; CODE CONVERSION IN GENERAL
    • H03M1/00—Analogue/digital conversion; Digital/analogue conversion
    • H03M1/12—Analogue/digital converters
    • H03M1/50—Analogue/digital converters with intermediate conversion to time interval
    • H03M1/56—Input signal compared with linear ramp
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/71—Charge-coupled device [CCD] sensors; Charge-transfer registers specially adapted for CCD sensors
    • H04N25/75—Circuitry for providing, modifying or processing image signals from the pixel array
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
    • H04N25/771—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components comprising storage means other than floating diffusion
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
    • H04N25/772—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components comprising A/D, V/T, V/F, I/T or I/F converters
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/79—Arrangements of circuitry being divided between different or multiple substrates, chips or circuit boards, e.g. stacked image sensors
EP17773991.9A 2016-03-29 2017-02-27 Imaging element and imaging device Active EP3439289B1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2016065491 2016-03-29
PCT/JP2017/007550 WO2017169446A1 (en) 2016-03-29 2017-02-27 Imaging element and imaging device

Publications (3)

Publication Number Publication Date
EP3439289A1 EP3439289A1 (en) 2019-02-06
EP3439289A4 true EP3439289A4 (en) 2019-09-18
EP3439289B1 EP3439289B1 (en) 2021-11-17

Family

ID=59962947

Family Applications (1)

Application Number Title Priority Date Filing Date
EP17773991.9A Active EP3439289B1 (en) 2016-03-29 2017-02-27 Imaging element and imaging device

Country Status (5)

Country Link
US (3) US10998367B2 (en)
EP (1) EP3439289B1 (en)
JP (3) JP6724980B2 (en)
CN (2) CN109076181B (en)
WO (1) WO2017169446A1 (en)

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JP2020096225A (en) * 2018-12-10 2020-06-18 ソニーセミコンダクタソリューションズ株式会社 Imaging device and electronic apparatus
JP7295632B2 (en) * 2018-12-13 2023-06-21 ルネサスエレクトロニクス株式会社 Semiconductor equipment and systems
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US11218660B1 (en) 2019-03-26 2022-01-04 Facebook Technologies, Llc Pixel sensor having shared readout structure
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US11164856B2 (en) 2019-09-19 2021-11-02 Micron Technology, Inc. TSV check circuit with replica path
US10916489B1 (en) 2019-10-02 2021-02-09 Micron Technology, Inc. Memory core chip having TSVS
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Also Published As

Publication number Publication date
JPWO2017169446A1 (en) 2019-01-24
CN109076181A (en) 2018-12-21
WO2017169446A1 (en) 2017-10-05
JP6724980B2 (en) 2020-07-15
CN113923389A (en) 2022-01-11
US20210193725A1 (en) 2021-06-24
CN109076181B (en) 2021-10-15
EP3439289B1 (en) 2021-11-17
JP2022079776A (en) 2022-05-26
JP2020162173A (en) 2020-10-01
US20230246054A1 (en) 2023-08-03
US10998367B2 (en) 2021-05-04
EP3439289A1 (en) 2019-02-06
US11652128B2 (en) 2023-05-16
US20190067359A1 (en) 2019-02-28

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