EP3070793B1 - Source de fréquence de récurrence variable bon marché pour lasers ultrarapides à énergie élevée - Google Patents
Source de fréquence de récurrence variable bon marché pour lasers ultrarapides à énergie élevée Download PDFInfo
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- EP3070793B1 EP3070793B1 EP16154800.3A EP16154800A EP3070793B1 EP 3070793 B1 EP3070793 B1 EP 3070793B1 EP 16154800 A EP16154800 A EP 16154800A EP 3070793 B1 EP3070793 B1 EP 3070793B1
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- Prior art keywords
- pulse
- fiber
- amplifier
- laser
- compression
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- 239000000835 fiber Substances 0.000 claims description 170
- 239000006185 dispersion Substances 0.000 claims description 26
- 230000003595 spectral effect Effects 0.000 claims description 17
- GQYHUHYESMUTHG-UHFFFAOYSA-N lithium niobate Chemical compound [Li+].[O-][Nb](=O)=O GQYHUHYESMUTHG-UHFFFAOYSA-N 0.000 claims description 6
- 229910052769 Ytterbium Inorganic materials 0.000 claims description 4
- 238000010521 absorption reaction Methods 0.000 claims description 4
- NAWDYIZEMPQZHO-UHFFFAOYSA-N ytterbium Chemical compound [Yb] NAWDYIZEMPQZHO-UHFFFAOYSA-N 0.000 claims description 4
- 230000006835 compression Effects 0.000 description 85
- 238000007906 compression Methods 0.000 description 85
- 238000000034 method Methods 0.000 description 26
- 230000003321 amplification Effects 0.000 description 24
- 238000003199 nucleic acid amplification method Methods 0.000 description 24
- 230000003287 optical effect Effects 0.000 description 23
- 238000001069 Raman spectroscopy Methods 0.000 description 20
- 238000013461 design Methods 0.000 description 15
- 230000008901 benefit Effects 0.000 description 10
- 239000000463 material Substances 0.000 description 10
- 238000001228 spectrum Methods 0.000 description 10
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 9
- 230000003247 decreasing effect Effects 0.000 description 9
- 230000002123 temporal effect Effects 0.000 description 8
- 238000010586 diagram Methods 0.000 description 7
- 239000013307 optical fiber Substances 0.000 description 7
- 239000000377 silicon dioxide Substances 0.000 description 4
- LSGOVYNHVSXFFJ-UHFFFAOYSA-N vanadate(3-) Chemical compound [O-][V]([O-])([O-])=O LSGOVYNHVSXFFJ-UHFFFAOYSA-N 0.000 description 4
- 230000008033 biological extinction Effects 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 3
- 238000005253 cladding Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 230000006870 function Effects 0.000 description 3
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 3
- 238000011160 research Methods 0.000 description 3
- 230000005540 biological transmission Effects 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 230000001419 dependent effect Effects 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- 230000000737 periodic effect Effects 0.000 description 2
- 230000010287 polarization Effects 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 229910052594 sapphire Inorganic materials 0.000 description 2
- 239000010980 sapphire Substances 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 229910052691 Erbium Inorganic materials 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 229910052593 corundum Inorganic materials 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- UYAHIZSMUZPPFV-UHFFFAOYSA-N erbium Chemical compound [Er] UYAHIZSMUZPPFV-UHFFFAOYSA-N 0.000 description 1
- 238000001914 filtration Methods 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 238000005459 micromachining Methods 0.000 description 1
- 238000002406 microsurgery Methods 0.000 description 1
- 229910052756 noble gas Inorganic materials 0.000 description 1
- 230000009022 nonlinear effect Effects 0.000 description 1
- 230000010363 phase shift Effects 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 239000004038 photonic crystal Substances 0.000 description 1
- 230000001902 propagating effect Effects 0.000 description 1
- 238000005086 pumping Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- 230000008439 repair process Effects 0.000 description 1
- 238000012552 review Methods 0.000 description 1
- 238000007493 shaping process Methods 0.000 description 1
- 238000001356 surgical procedure Methods 0.000 description 1
- 238000003786 synthesis reaction Methods 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
- 239000012780 transparent material Substances 0.000 description 1
- 229910001845 yogo sapphire Inorganic materials 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/005—Optical devices external to the laser cavity, specially adapted for lasers, e.g. for homogenisation of the beam or for manipulating laser pulses, e.g. pulse shaping
- H01S3/0057—Temporal shaping, e.g. pulse compression, frequency chirping
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/05—Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
- H01S3/06—Construction or shape of active medium
- H01S3/063—Waveguide lasers, i.e. whereby the dimensions of the waveguide are of the order of the light wavelength
- H01S3/067—Fibre lasers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/05—Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
- H01S3/06—Construction or shape of active medium
- H01S3/063—Waveguide lasers, i.e. whereby the dimensions of the waveguide are of the order of the light wavelength
- H01S3/067—Fibre lasers
- H01S3/06708—Constructional details of the fibre, e.g. compositions, cross-section, shape or tapering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/05—Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
- H01S3/06—Construction or shape of active medium
- H01S3/063—Waveguide lasers, i.e. whereby the dimensions of the waveguide are of the order of the light wavelength
- H01S3/067—Fibre lasers
- H01S3/06708—Constructional details of the fibre, e.g. compositions, cross-section, shape or tapering
- H01S3/06716—Fibre compositions or doping with active elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/05—Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
- H01S3/06—Construction or shape of active medium
- H01S3/063—Waveguide lasers, i.e. whereby the dimensions of the waveguide are of the order of the light wavelength
- H01S3/067—Fibre lasers
- H01S3/06708—Constructional details of the fibre, e.g. compositions, cross-section, shape or tapering
- H01S3/06725—Fibre characterized by a specific dispersion, e.g. for pulse shaping in soliton lasers or for dispersion compensating [DCF]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/05—Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
- H01S3/06—Construction or shape of active medium
- H01S3/063—Waveguide lasers, i.e. whereby the dimensions of the waveguide are of the order of the light wavelength
- H01S3/067—Fibre lasers
- H01S3/0675—Resonators including a grating structure, e.g. distributed Bragg reflectors [DBR] or distributed feedback [DFB] fibre lasers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/05—Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
- H01S3/06—Construction or shape of active medium
- H01S3/063—Waveguide lasers, i.e. whereby the dimensions of the waveguide are of the order of the light wavelength
- H01S3/067—Fibre lasers
- H01S3/06754—Fibre amplifiers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/05—Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
- H01S3/06—Construction or shape of active medium
- H01S3/063—Waveguide lasers, i.e. whereby the dimensions of the waveguide are of the order of the light wavelength
- H01S3/067—Fibre lasers
- H01S3/06754—Fibre amplifiers
- H01S3/06758—Tandem amplifiers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/05—Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
- H01S3/08—Construction or shape of optical resonators or components thereof
- H01S3/08013—Resonator comprising a fibre, e.g. for modifying dispersion or repetition rate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/09—Processes or apparatus for excitation, e.g. pumping
- H01S3/091—Processes or apparatus for excitation, e.g. pumping using optical pumping
- H01S3/094—Processes or apparatus for excitation, e.g. pumping using optical pumping by coherent light
- H01S3/094003—Processes or apparatus for excitation, e.g. pumping using optical pumping by coherent light the pumped medium being a fibre
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/09—Processes or apparatus for excitation, e.g. pumping
- H01S3/091—Processes or apparatus for excitation, e.g. pumping using optical pumping
- H01S3/094—Processes or apparatus for excitation, e.g. pumping using optical pumping by coherent light
- H01S3/094076—Pulsed or modulated pumping
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/09—Processes or apparatus for excitation, e.g. pumping
- H01S3/091—Processes or apparatus for excitation, e.g. pumping using optical pumping
- H01S3/094—Processes or apparatus for excitation, e.g. pumping using optical pumping by coherent light
- H01S3/0941—Processes or apparatus for excitation, e.g. pumping using optical pumping by coherent light of a laser diode
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
- H01S3/10038—Amplitude control
- H01S3/10046—Pulse repetition rate control
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
- H01S3/11—Mode locking; Q-switching; Other giant-pulse techniques, e.g. cavity dumping
- H01S3/1106—Mode locking
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/14—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range characterised by the material used as the active medium
- H01S3/16—Solid materials
- H01S3/1601—Solid materials characterised by an active (lasing) ion
- H01S3/1603—Solid materials characterised by an active (lasing) ion rare earth
- H01S3/1608—Solid materials characterised by an active (lasing) ion rare earth erbium
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/14—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range characterised by the material used as the active medium
- H01S3/16—Solid materials
- H01S3/1601—Solid materials characterised by an active (lasing) ion
- H01S3/1603—Solid materials characterised by an active (lasing) ion rare earth
- H01S3/1618—Solid materials characterised by an active (lasing) ion rare earth ytterbium
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/23—Arrangements of two or more lasers not provided for in groups H01S3/02 - H01S3/22, e.g. tandem arrangements of separate active media
- H01S3/2375—Hybrid lasers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
- H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
- H01S5/06209—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes in single-section lasers
- H01S5/06216—Pulse modulation or generation
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04B—TRANSMISSION
- H04B10/00—Transmission systems employing electromagnetic waves other than radio-waves, e.g. infrared, visible or ultraviolet light, or employing corpuscular radiation, e.g. quantum communication
- H04B10/50—Transmitters
- H04B10/508—Pulse generation, e.g. generation of solitons
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/24—Coupling light guides
- G02B6/26—Optical coupling means
- G02B6/28—Optical coupling means having data bus means, i.e. plural waveguides interconnected and providing an inherently bidirectional system by mixing and splitting signals
- G02B6/293—Optical coupling means having data bus means, i.e. plural waveguides interconnected and providing an inherently bidirectional system by mixing and splitting signals with wavelength selective means
- G02B6/29304—Optical coupling means having data bus means, i.e. plural waveguides interconnected and providing an inherently bidirectional system by mixing and splitting signals with wavelength selective means operating by diffraction, e.g. grating
- G02B6/29316—Light guides comprising a diffractive element, e.g. grating in or on the light guide such that diffracted light is confined in the light guide
- G02B6/29317—Light guides of the optical fibre type
- G02B6/29319—With a cascade of diffractive elements or of diffraction operations
- G02B6/2932—With a cascade of diffractive elements or of diffraction operations comprising a directional router, e.g. directional coupler, circulator
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/24—Coupling light guides
- G02B6/26—Optical coupling means
- G02B6/28—Optical coupling means having data bus means, i.e. plural waveguides interconnected and providing an inherently bidirectional system by mixing and splitting signals
- G02B6/293—Optical coupling means having data bus means, i.e. plural waveguides interconnected and providing an inherently bidirectional system by mixing and splitting signals with wavelength selective means
- G02B6/29371—Optical coupling means having data bus means, i.e. plural waveguides interconnected and providing an inherently bidirectional system by mixing and splitting signals with wavelength selective means operating principle based on material dispersion
- G02B6/29374—Optical coupling means having data bus means, i.e. plural waveguides interconnected and providing an inherently bidirectional system by mixing and splitting signals with wavelength selective means operating principle based on material dispersion in an optical light guide
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
- H01S3/11—Mode locking; Q-switching; Other giant-pulse techniques, e.g. cavity dumping
- H01S3/1123—Q-switching
- H01S3/115—Q-switching using intracavity electro-optic devices
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/23—Arrangements of two or more lasers not provided for in groups H01S3/02 - H01S3/22, e.g. tandem arrangements of separate active media
- H01S3/2308—Amplifier arrangements, e.g. MOPA
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/005—Optical components external to the laser cavity, specially adapted therefor, e.g. for homogenisation or merging of the beams or for manipulating laser pulses, e.g. pulse shaping
- H01S5/0057—Optical components external to the laser cavity, specially adapted therefor, e.g. for homogenisation or merging of the beams or for manipulating laser pulses, e.g. pulse shaping for temporal shaping, e.g. pulse compression, frequency chirping
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/005—Optical components external to the laser cavity, specially adapted therefor, e.g. for homogenisation or merging of the beams or for manipulating laser pulses, e.g. pulse shaping
- H01S5/0085—Optical components external to the laser cavity, specially adapted therefor, e.g. for homogenisation or merging of the beams or for manipulating laser pulses, e.g. pulse shaping for modulating the output, i.e. the laser beam is modulated outside the laser cavity
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
Definitions
- the present invention relates to rep-rate variable, ultrafast optical sources that have energies suitable for applications in high-energy, ultrafast laser systems. These sources may replace mode-locked lasers for generating short pulses for higher energy applications.
- the sources are based on inexpensive longer pulse sources and utilize pulse compression in optical fibers to obtain shorter pulses at high pulse energies.
- the present invention relates to a source for high-energy, ultrafast lasers.
- Most of the related art is focused on sources for telecommunications.
- WDM wavelengths
- TDM frequency of the data
- Presently installed systems typically run at 10 Gigabits-per-sec (Gbit/s) and below, however, there is significant progress in developing systems that operate at 40 Gbit/s and 160 Gbit/s.
- the present state of the art is an experimental system that operates at 1.28 Terabit-per-sec (Tbit/s) for one channel ( Nakazawa et al, "Ultrahigh-speed OTDM Transmission beyond 1 Tera Bit-Per-Second Using a Femtosecond Pulse Train” IECE Trans. Electron. E38-C, pp. 117-125, (2002 )).
- the present optical source is a cw laser diode having its output modulated with a lithium niobate amplitude modulator.
- the laser diode can be directly modulated, however, direct modulation of the diode typically imposes a spectral chirp on the laser diode output that degrades the signal after propagation some distance down a fiber. It is not certain that lithium niobate modulators and the related electronics will be able to reach the frequencies and picosecond and subpicosecond pulse widths needed for the systems of the future. Therefore research on alternative sources is presently very active. The alternative sources can be categorized into three areas.
- the first two are laser diode based devices where the thrust of the research is to improve the fidelity of the pulses generated.
- One category of such devices are mode-locked laser diodes where the frequency is determined by the round trip time of the laser cavity.
- the other category of laser diode based devices is gain switched laser diodes where the frequency is determined by the electronics. In order to get short pulses from gain switched diodes, the pulses need to be compressed after the diodes. This is normally accomplished by soliton compression in fibers.
- the third category of sources are mode-locked fiber lasers.
- Mode-locked fiber lasers generally give high quality pulses but operate at lower frequencies than 40-160 GHz. The reason for the lower repetition rate is there is normally only one pulse in the cavity of a mode-locked laser and the cavity of the fiber laser needs to be long for sufficient gain from the fiber.
- the thrust of mode-locked fiber laser research is to increase the frequency of these devices by methods such as higher harmonic mode locking.
- the configuration that is related to the present invention is the gain switched diode followed by a fiber for soliton pulse compression.
- An early example is in ( Ahmed et al, "Generation of 185fs pedestal-free pulses using a 1.55 ⁇ m distributed feedback semiconductor laser” Electronic Letters 31, pp 195-196, (1995 )).
- the potential to generate variable and low rep rates from gain switched diodes with external pulse compression would be advantageous for using these devices in high-energy systems.
- the soliton pulse compression technique normally used is adiabatic soliton compression in dispersion decreasing fiber.
- a dispersion decreasing fiber is a fiber that has its core slowly decreased. In order to remain a soliton with decreasing dispersion the pulse width must slowly decrease.
- Pulse compression in dispersion decreasing fiber usually gives good pulse quality and pulse compression factors up to 16.
- a disadvantage with the present telecom gain-switched diode designs is due to the low pulse energies required and generated. Under these conditions, the nonlinearity for fiber pulse compression is small and so the fibers are usually quite long and expensive, particularly if the fiber is dispersion decreasing fiber. Often a fiber that corrects the chirp of the laser diodes is also required before the dispersion decreasing fiber. This is often near a kilometer long.
- a nonlinear optical device is also often required to remove a long pulse pedestal after the fiber pulse compressor. Such a device is described in ( K.
- the desired properties for the optical sources of this invention are the ability to produce picosecond and subpicosecond pulses with variable repetition-rates and with energies suitable for further amplification to create energetic, ultrafast pulses. Another desired feature is low cost. These sources will be used in ultrafast sources that have many applications. A few of the applications now being pursued are femtosecond micromachining, refractive index alteration in transparent materials for optical memory and photonic devices, three-dimensional integrated optics and photonic crystals, eye surgery, dentistry, dermatology and microsurgery. For these applications, the pulse characteristics are quite different than for telecom systems.
- the source in this patent is a laser diode that is electronically chirped to give a 1 ns pulse that was amplified and then compressed to ⁇ 2 ps. It is highly desirable to be able to obtain even shorter pulses.
- the source of pulses for chirped pulse amplification has been predominately femtosecond mode-locked fiber or solid-state lasers that operate at 50-100 MHz. These sources are typically down-counted; e.g., for 1 kHz operation, one pulse out of 50,000-100,000 is amplified. A source that could be operated at variable and lower frequencies would be more suitable.
- Femtosecond mode-locked fiber lasers do not normally have sufficient pulse energies and the pulses are often longer than desired for these nontelecom sources.
- Soliton compression (narrowing) during amplification in a fiber amplifier and higher-order soliton compression have already been utilized with these sources.
- Soliton narrowing during amplification is equivalent to decreasing the dispersion in the fiber.
- the pulse peak power is increased the pulse width needs to decrease to maintain the soliton.
- Such pulse compression for higher-energy pulses is described in (Fermann, Galvanauskas and Harter, "Apparatus and Method for the Generation of High-Power Femtosecond Pulses from a Fiber Amplifier" U.S. patent 5,880,877 ).
- the fiber amplifier can be less than a meter and soliton compression is built into this amplifier.
- a pulse is seeded into a fiber amplifier and it is amplified to energies of higher order solitons.
- a compression factor of 100 can be obtained by this method but typically a smaller factor is used since pulse energy and length becomes too sensitive.
- a means to get to even higher pulse energies with soliton compression is described in U.S. Patent 5,880,877 . Higher energies are possible by utilizing a multimode fiber to propagate a single transverse mode. The intensity in the fiber is decreased since the multimode fiber has a larger mode area for the fundamental mode compared to a single mode fiber. Thus, higher pulse energies are necessary before soliton effects again become important.
- the pulse widths from these lasers are between 30-100 ps and the pulses are compressed normally by a factor of 100 to the subpicosecond range.
- the details of these systems can be found in (Kafka et al, "Pulse compression” U.S. Patent 4,750,809 , Kafka et al, "Peak power fluctuations in optical pulse compression", U.S. Patent 4,896,326 and Kafka et al "Optical fiber for pulse compression" U.S. 4,913,520 ).
- patent 5,818,630 also teaches using positive GVD MM amplifier or undoped fibers for pulse compression. It does not teach parabolic pulse amplification or pulse compression for the pulses from gain switched laser diodes or microchip lasers that are the initial sources for the rather long pulses.
- pulse compressors using positive GVD fibers that are multimode have been used. Pulse compressors utilizing multimode, positive GVD graded-index fibers has been used for initial pulse energies as high as 2 microjoules in ( Damm et al, "Compression of picosecond pulses from a solid-state laser using self-phase modulation in graded-index fibers", Optics Letters 10, pp. 176-8, (1985 )).
- the output was multi-transverse mode.
- Pulse compressors utilizing multimode, positive GVD fibers with single-mode output are described in (Fermann and Harter, "Single-mode amplifiers and compressors based on Multi-mode fibers", US Patent 5,818,630 ).
- the highest pulse energy utilized in compression with single mode operation of multimode fibers was in the nanojoule regime.
- the sources of the initial pulses described in some examples of the present disclosure are gain switched laser diodes and microchip lasers.
- Gain switched laser diodes are described in the previously mentioned paper by Ahmed et al.
- a microchip laser is a small diode pumped solid-state laser.
- the microchip is either actively Q-switched or passively Q-switched.
- a commonly used passively Q-switch design is given in ( Zayhowski et al., "Diode-pumped passively Q-switched picosecond microchip lasers", Optics Letters 19, pp. 1427-29 (1994 )).
- microchip laser that was used in this disclosure is described in ( Zayhowski et al., "Coupled-cavity electro-optically Q-switched NdYVO4 microchip lasers", Optics Letters 20, pp. 716-8 (1995 )). Pulse widths as low as 115 ps have been demonstrated for this actively Q-switched laser. In ( Braun et al., "56-ps passively Q-switched diode-pumped microchip laser", Optics Letters, 22 pp 381-2, (1997 )) 56 ps pulses from a passively Q-switched laser were obtained.
- DE 10124983 discloses a modular, compact and widely tunable laser system for the efficient generation of high peak and high average power ultrashort pulses.
- the modularity is ensured by the implementation of interchangeable amplifier components.
- the system compactness is ensured by employing different fiber amplifiers, directly or indirectly pumped by diode lasers.
- Peak power handling capability of the fiber amplifiers is expanded by using optimized pulse shapes as well as dispersively broadened pulses.
- Dispersive broadening is introduced by dispersive pulse stretching using a positive dispersion fiber in the presence of self-phase modulation and gain, resulting in a formation of high-power parabolic pulses.
- a Raman-shifted, frequency-doubled Er fiber laser is disclosed.
- the femtosecond fiber laser can be a commercial high energy soliton source delivering ⁇ 200 fs pulses at a wavelength of 1.57 ⁇ m and a pulse energy of 1 nJ at a repetition rate of 50 MHz.
- a combination of a diode-laser pulse source with an Er-amplifier is disclosed.
- US 5,541,947 discloses a method and apparatus for generating high pulse energy, short optical pulses having relatively high contrast.
- the system comprises a diode laser to seed a compact diode pumped amplifier, and comprises pulse shaping and cleaning elements to achieve relatively high energie 4s and high contrast.
- WO 01/20398 A1 discloses a single-wavelength laser oscillator supplying a laser beam to a fiber optic amplifier through an optical modulator.
- the amplified laser beam is split by splitters, amplified by optical amplifier units and supplied through a fiber bundle to a wavelength converter, which in turn converts the split beams into ultraviolet laser radiation for use as exposure light.
- One object of this invention is to convert relatively long pulses from rep-rate variable ultrafast optical sources to shorter, high-energy pulses suitable for sources in high-energy ultrafast lasers. Another object of this invention is to take advantage of the need for higher pulse energies at lower repetition rates so that such sources can be cost effective.
- the second to fourth embodiments are embodiments of the present invention.
- the first five embodiments use a laser diode as the source of long pulses for these ultrafast sources.
- the remaining embodiments use a microchip laser for the source of the long pulses.
- the initial source of pulses is a laser diode operating in the telecom window at 1550 nm.
- This laser diode can be a diode used normally as a telecom pulse source. It can be internally modulated, gain switched, or externally modulated by utilizing a lithium niobate or electro-absorption modulator.
- the pulses need to be in the 1 -100 picosecond range.
- the major difference in operation of this laser from the use in telecom systems is that the repetition rate will be in the kHz to MHz range rather than the GHz range.
- the pulse is then amplified in a fiber amplifier.
- This amplifier uses positive dispersion fiber at least for the later section of the amplifier.
- the amplifier is designed so that pulse compression will occur by means of spectral generation along the fiber as the pulse is temporally chirped.
- the pulse is typically recompressed with a diffractive element such as diffraction gratings, prisms, or a fiber grating. If the source is to be further amplified then chirped pulse amplification will be used so no pulse compression is needed at this point or the pulse may need to be further chirped using a diffractive element before amplification.
- Z 0 is the soliton period or in this case where solitons do not propagate, it is the propagation distance in a fiber with a group-velocity dispersion parameter of ⁇ 2 where a pulse of temporal width T 0 doubles in temporal width.
- N would be the Soliton order for a pulse with peak power P 0 in a fiber with a nonlinear coefficient, ⁇ .
- ⁇ is a function of the wavelength of the pulse ⁇ , the nonlinear refractive index coefficient, n 2 , of the material in the fiber and the effective area, A eff , of the guided light in the fiber.
- F c is the compression factor.
- Fig. 1A shows the output from a single mode silica fiber when a one microjoule, 250 ps pulse from a 1.064nm microchip laser propagates in 100 meters of single mode fiber. There is spectral broadening at 1.065 ⁇ m. The multiple-lobed spectrum is indicative of self-phase modulation. However, significant energy is converted to the first Stokes Raman wavelength at 1.12 ⁇ m and the second Stokes Raman wavelength at 1.18 ⁇ m. The peak power limits can be calculated.
- Stimulated Raman will grow from noise when the gain is equal to exp(16) and the gain coefficient for Raman is g raman L eff P thresh /A eff where g raman is the coefficient for Raman gain and is 3.5x10 -12 cm/W in silica glass, A eff is the mode area, P thresh is the threshold peak power and L eff is the effective length of the fiber.
- the effective length is modified in a high gain amplifier since the peak power is only high near the end of the fiber.
- Increased performance can be obtained by utilizing fibers designed to prevent propagation of longer wavelengths such as reported in ( Arbore et al, "S-band Erbium-Doped Fiber Amplifiers for WDM Transmission Between 1488 and 1508nm” in OSA Trends in Optics and Photonics (TOPS) Vol. 86, Optical Fiber Communication Conference, Postconference Edition (Optical Society of America, Washington, DC, 2003), pp. 374-376 .)
- the fiber described in this reference is a "depressed-cladding design" to create a fundamental-mode cut off above the wavelength of operation.
- Another solution to provide loss to longer wavelengths to prevent Raman generation is a series of filters along the length of fiber. ( Etsuko Ishikawa et al, in Proceedings of ECOC 2001 (2001 ), Post-Deadline paper). These fibers can also be used in fiber amplifiers to obtain higher peak powers.
- a gain switched laser diode as is described in Ahmed et al is used as the source 1.
- the pulse is now about 2x transform, limited.
- the chirp compensation is sufficiently accurate as is described in Mestadagh, D., "Fiber-grating pulse compressor: Performance with initially chirped pulses" Applied Optics 26, pp. 5234-5240, (1987 ).
- EDFA erbium fiber amplifier
- the amplifier is designed so little self-phase modulation takes place in the amplifier. This can be accomplished with a short fiber length ( ⁇ 10 M) and a large effective area of the mode ( ⁇ 100 ⁇ m 2 ).
- the rest of the fiber pulse compressor consists of an undoped fiber 4.
- the primary constraint on this fiber is positive GVD.
- Lucent Ultrawave IDF as is described in ( Knudsen, S. "Design and manufacture of dispersion compensating fibers and their performance in systems", Proc. of OFC '02, paper WU3, 330-331 (2002 )).
- the optimum length, Z opt , of the undoped fiber should be ⁇ 20 M for a compression factor of around 50 and a target pulse width around 100 fs.
- the energy of the amplified pulse is 6.6 nanojoules. If the rep-rate for this source is 1 MHz, then the average power from this amplifier is a modest 6.6 mW.
- Spectral generation occurs by self-phase modulation in the fiber.
- Self-phase modulation is proportional to the rate of change in the intensity.
- the stretched pulse can now be compressed or stretched with a grating 5 as is shown in Fig. 2 .
- a circulator 6 is used to transit the pulses into and out of the fiber grating.
- the pulse would be stretched in the case of subsequent amplification by a chirped pulse amplification system, or compressed for output if there is no subsequent amplification stage.
- the fiber grating has several other advantages.
- (Kafka et al, "Peak power fluctuations in optical pulse compression” US 4,896,326 ) it has been shown that amplitude fluctuations can lead to pulse width fluctuations.
- This patent describes a feedback circuit for controlling the input laser for correcting these fluctuations.
- pulse width fluctuations could be corrected by varying the chirp of the fiber grating.
- This method is being applied for correcting dispersion fluctuations in telecom systems as is described in ( Kwon et al "Group-delay-tailored chirped fiber Bragg gratings using a tapered elastic plate” IEEE Photonics Technology Letters, 14, pp. 1433-1435, (2002 )).
- the chirp is tailored by adjusting the strain on the fiber grating.
- Another means of adjusting the chirp is by adjusting the temperature along the grating.
- Another advantage is that the bandwidth of the gratings can be designed to act as a filter. It has been shown that by cutting the extremes of the spectra that pulse quality can be improved in this pulse compression means. (( Heritage, "Spectral windowing of frequency-modulated optical pulses in a grating compressor", Applied Physics Letters, 47, pp.8789 (1985 )).
- Such methods include frequency doubling, the use of a nonlinear loop mirror, and nonlinear polarization rotation in a fiber and in hollow waveguides filled with a noble gas.
- the short pulse from the laser diode is generated by a method other than gain switching the laser diode.
- the technique employed here is an external lithium niobate modulator 32 after a cw laser diode 31.
- the advantage with this method is that little chirp is imparted on the pulse so that chirp compensation is not necessary.
- This method is commonly used in the telecommunications field.
- one specification that is more critical for this application than for telecommunications is the extinction ratio.
- the typical extinction ratio for a lithium niobate modulator is 20-30 db. This specification can be found from the data sheet for JDSU model no. 21013142.
- this modulator is turned on to give a 100 ps pulse at a 10 kHz pulse rate, then the pulse is on for 100 ps while the cw is on for 0.1 ms. This means that the cw component is on the order of 10 5 longer than the pulse. If the cw amplitude is cut by just 30 db, the average power will still be dominated by this cw component. At higher repetition rates two modulators can be used and will be sufficient. Another approach is to gate the cw laser and have it on for a short time during the pulse. If the laser diode is gated on for about 3 ns while the modulator is switched then the extinction ratio is not critical. Any other means to create a short pulse from a laser diode can be considered. Another possibility is an electroabsorption modulator (not shown) after the diode.
- the pulses are amplified in an Ytterbium doped fiber amplifier (YDFA) 33.
- the compressor fiber 34 is the same fiber as in the first embodiment but approximately 200M long, compared to 20M.
- the fiber is longer than that in the first embodiment for two reasons. The first is the initial pulse width is an order of magnitude longer. The second reason is that the peak power is lower. Since the initial pulse width is longer, it may be desirable to have a second stage of compression. This is easily implemented in the fiber grating/circulator configuration 35 shown in Fig. 3 .
- the fiber output from the circulator can be designed as the second compression fiber.
- the first stage was designed for a compression factor of near 80 so pulses around 0.5 picoseconds are expected.
- the second stage will be designed for 10x additional compression. This design can be implemented by adding an additional of 40 cm of the same fiber as was used in the first compression stage.
- the amplitude of the pulse will need to be controllable and lowered by about a factor of 4.
- an attenuator can be placed in the circulator.
- the pulses can be used stretched for further amplification, or compressed by an external bulk grating after this second fiber compressor.
- FIG. 4 Another configuration for a two-stage compressor is shown in the third embodiment in Figure 4 . It utilizes a four-port circulator 45 with an additional fiber grating 47.
- the second fiber compressor is spliced in front of the first fiber grating. The first pass through the extra 40 cm of fiber has negligible effect since the pulse is stretched. After the second pass through this compressor fiber, additional spectrum is generated and the pulse can be further compressed in the second chirped fiber grating.
- the forth embodiment of this invention includes an additional amplifier 58. It is desirable for the amplifier to operate as a parabolic pulse amplifier.
- the use of parabolic pulse amplification has unique advantages after the pulse compressor fiber 34. The advantages come from the fact that as the pulse energy increases at a given rate with propagation, the peak power increases at the square root of that rate because the spectral and temporal width is increasing at the square root of that rate. Thus, higher pulse energy is possible before the threshold of Raman generation. Also, since the pulse from the parabolic pulse amplifier is further spectrally broadened and is compressible, further compression is possible after the compression fiber. It is normally considered necessary to recompress the pulse after the pulse compression fiber for further compression of the pulse. This is the reason for the two stage compressor in the third embodiment. A parabolic pulse amplifier can replace one of the stages of compression and alleviate the need for a second grating compressor. This is a distinct advantage.
- Another configuration within this embodiment is to replace the two ytterbium amplifiers and the 200 meters of compression fiber with a single amplifier and 100 meters of pulse compression fiber connected to the amplifier. This amplifier and pulse compression fiber is double passed in this variation.
- the system In order for the system to include a parabolic pulse amplifier, it is necessary to transform the pulse shape from the laser diode into a pulse with a parabolic temporal shape and a linear spectral chirp.
- the first step in this process is the amplification of the pulse in a doped fiber to a sufficient pulse amplitude such that self-phase modulation takes place in the fiber.
- the self-phase modulation needs to be sufficiently strong that the pulse profile transforms from being the same spectrum along the temporal profile, to the spectrum being a function of time.
- the final transformation is the temporal profile change from that of the initial pulse, to near parabolic, this caused by more energy being accumulated where the self-phase matching is the strongest.
- the pulse shape from this undoped fiber is sufficiently close to a chirped, parabolic pulse to be the input into the parabolic pulse amplifier. It has been shown theoretically and experimentally that the pulse does not need to be a perfect parabolic pulse.
- the first section of the amplifier is a linear amplifier without nonlinear effects.
- the second section utilizes self-phase modulation and dispersion to transform the pulse into a pulse shape close to parabolic with linear chirp.
- This section can be an amplifier or an undoped fiber.
- the final section is the parabolic pulse amplifier.
- This embodiment of the invention can be operated near 100 MHz so as to replace the standard Nd:YAG or Nd:Vanadate mode-locked laser, or the newer mode-locked lasers such as in ( Kafka et al, US 6,421,573 , "Mode-locked laser and amplifier”).
- this laser can be used in the UV for detecting flaws on a surface as in US 6,373,565 "Method and apparatus to detect a flaw in a surface of an article", or to repair a defect in an electronic device as in US 6,436,602 "Method of repairing a defective portion in an electronic device” or for photolithography as in US 6,421,573 "Quasi-continuous Wave lithography Apparatus and Method".
- laser can be used in replacement of most types of mode-locked lasers with the advantage of being synchronizable to an event. For example, in repairing a flaw, once the beam is positioned to the right spot, a pulse or train of pulses can be fired.
- a fifth embodiment uses a laser diode that is spectrally and temporally chirped electronically.
- the pulse source being temporally chirped in the time domain by electronic means is described in U.S. Patent No. 5,4000,350 , and details on optimizing the electrical tuning of the laser diode is described in U.S. Patent. No. 5,633,885 .
- the pulse shape from this diode is sufficiently close to a parabolic pulse shape that they can be amplified in a parabolic pulse amplifier. This will generate additional spectrum so the pulses can be compressed to below the 2 ps that was obtained previously.
- a sixth embodiment is shown in Fig 6A and includes a Q-switched microchip laser 60 (as shown in Fig. 6B ) as the pulse source 61 and a compression fiber 62.
- the lasing material has been Nd:Vanadate.
- the lasing wavelength of Nd:Vanadate is 1064 nm.
- the microchip laser is a monolithic piece, where the lasing material is bonded to the Q-switching mechanism.
- the cavity length measures around one millimeter.
- a Q-switched laser can give pulse widths as short as a cw mode-locked Nd:YAG laser and can replace the mode-locked lasers for the source where fibers are used for compression.
- the repetition rate can be varied. It can have a low rep rate so the pulse energy is on the order of 1 microjoule compared to nanojoules from the mode-locked laser.
- Another advantage with this microchip laser is the cavity is monolithic so the output pointing stability is very good, and the alignment to a single mode fiber is robust. This was a large problem with systems based on cw mode-locked lasers.
- the microchip laser in this embodiment has a pulse width of 250'ps. With this pulse width, a design similar to the earlier embodiments is not possible, unless a fiber is used that inhibits Raman generation. There is a different design point for longer pulses and shorter fibers where GVD is negligible. This was studied theoretically in ( Tomlinson et al, "Compression of optical pulses chirped by self-phase modulation in fibers” Journal of the Optical Society of America B, pp. 139-149, (1984 )). A product was based on this design and is described in ( US 4,913,520 , US 4,896,326 and Kafka et al "Peak power fluctuations in optical pulse compression", IEEE Journal of Quantum Electronics 24, pp.
- the initial pulse is transform limited, and the self-phase modulated pulse can be compressed near-transform limited, then this ratio is the compression factor.
- the microchip laser is a single longitudinal Nd:vanadate source that provides a smooth temporal profile.
- the pulse width is 250 picoseconds.
- One solution for the compression fiber 62 is a standard single mode fiber with a mode field diameter of 5.9 ⁇ m and a NA of 0.12. The length of this compression fiber would be about 2 meters for a compression ratio of around 50.
- the output energy from microchip lasers can be 10 microjoules. In this case, the light intensity at the entrance face of the fiber will be near the damage threshold.
- a coreless end cap (not shown) can be used on the fiber so the mode can expand before the surface of the fiber.
- an amplifier with a larger mode field diameter can be used, such as a multimode fiber that propagates a single mode or a holey fiber amplifier as was used in ( Furusawa et al "Cladding pumped Ytterbium-doped fiber laser with holey inner and outer cladding", Optics Express 9, pp. 714-720, (2001 )). If a fiber with an order of magnitude higher mode area (mode field diameter of 19.5 ⁇ m) is used, then the parameters in the fiber will be the same as in the case with 1 microjoule input. So the fiber length would again be 2 meters.
- the pulse compression can take place simply in amplifiers.
- the single mode beam should be further amplified in a multimode fiber. If further amplification were desired, it would be preferable to keep the pulse stretched.
- This chirped pulse source would be ideal for amplification of ultrashort pulses by chirped pulse amplification.
- the pulse is then compressed after amplification.
- the microchip 71 was operated at 0.5 ⁇ J, and produced 250 ps, pulses at 6 kHz.
- the amplifier fiber 72 was a multimode amplifier fiber that amplified a single mode with a mode-field diameter of 17 ⁇ m.
- the pulse was then amplified to 30 microjoules where Raman limited the amplification.
- the spectral output is shown in Fig. 8 at the output
- the input spectral width (0.007nm) is below the resolution limit (0.1nm) of the spectrum analyzer. This case was numerically modeled and it was found that this pulse should compress with bulk gratings to ⁇ 7 ps as is shown in Figs. 9A and 9B .
- the dotted lines show the results of spectrally filtering the output to reduce the pedestal.
- a compressor 73 may also be employed as an option.
- An eighth embodiment, illustrated in Fig. 10 utilizes the same amplifier fiber 103, as in the seventh embodiment, however, in a double pass configuration. Double pass configurations can be used for the amplifiers and the pulse compression fibers to maintain single polarization operation for non-PM fiber. Also, the amplifier can operate in a lower gain and higher power mode. The amplifier fiber can be used as a pulse compression fiber in both directions. If this is the case, a fiber grating may be desired in place of the mirror 104.
- the fiber grating can be used to control the temporal shape of the pulse.
- the pulse is now chirped, therefore changing the reflectivity of the fiber grating as a function of wavelength will shape the pulse.
- the linearity of the chirp of the output can be changed to better match that of the bulk gratings.
- This method has been described by adding a amplitude mask in a bulk grating in ( Thurston et al, "Analysis of picosecond pulse shape synthesis by spectral masking in a grating pulse compressor" IEEE Journal of Quantum Electronics, QE-22 pp. 682-696 (1986 )).
- the seventh and eighth embodiments which include a microchip laser and an amplifier will exhibit output powers greater than 500 nJ.
- the build-up time for a gain switched (Q-switched) laser is about 10x its pulse width. So if the pulse width of the pump laser is 5x longer than the gain switch pulse, all the energy goes into that single pulse. In the Harter paper referenced above, the pump pulse was 25x-50x longer than the gain switched pulse. In this work, if the laser is pumped hard, multiple pulses were obtained. Also, the gain switch pulse came out at the peak of the pump pulse so about half of the pump pulse energy is wasted.
- a shorter pump pulse is highly desirable.
- the pulses from the typical microchip are definitely too long for the pump laser.
- the pulse-compressed microchip laser can be used as a pump.
- subpicosecond pulses from a gain switched laser requires more than just a short pump pulse. The time it takes light to travel around the laser cavity must be shorter than the required pulse width.
- the cavity would need to be shorter than cx2xLxn, where c is the speed of light, L is the cavity length and n is the refractive index of the material in the cavity.
- the length of the crystal would need to be at least an order of magnitude shorter than the 5.5 mm used and, thus, 500 ⁇ m or less.
- this thickness it is difficult to absorb pump light.
- the problem with absorbing pump light in a very thin laser material has been solved in (Brauch et al, "Laser Amplifying System" U.S. 5,553,088 ).
- the amplifier design uses a very thin material that has good absorption.
- the repetition rate is low so that the overall thermal load will be low, so thermal tensing will not help to support a large diameter single mode.
- the use of longer cavities and thermal lensing in order to support large modes in thin semiconductors is described in (Mooradian et al, "Optimized laser energy conversion through automatic mode matched pumping" US 5,627,853 )
- the gain in this gain switched laser is significantly higher than that in cw lasing, so that gain guiding will take place and support a large diameter single mode.
- the use of gain guiding to support large transverse modes is used in fibers in U.S. 5,818,630 .
- variable rep-rate source for high energy, ultrafast lasers according to the present invention have been described in detail, a skilled artisan will readily appreciate that numerous other implementations and variations of these implementations are possible without departing from the scope of the appended claims.
- the source of pulses can have a large range of pulse widths.
- a practical limitation is the grating utilized for compression.
- One meter long fiber gratings have been made that can compress 10 nanosecond pulses.
- some implementations of the invention may utilize pulses of up to about 10 nanoseconds.
- bulk grating compressors have been built that compress 4 nanosecond pulses.
- some advantageous implementations of the present invention may utilize pulses which are up to about 4 nanoseconds.
- 10 cm fiber gratings and bulk compressors that compress 1 nanosecond pulses are readily available.
- some particularly advantageous implementations of the invention may utilize pulse widths up to about 1 nanosecond.
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Claims (11)
- Système comprenant :une source d'impulsions fournissant en sortie des impulsions qui sont inférieures ou égales à environ 10 ns à une fréquence de répétition dans une plage allant de 1 kHz à moins de 10 MHz, ladite source d'impulsions comprenant une diode laser cw modulée extérieurement (31), dans lequel la diode laser cw (31) est configurée de manière à être déclenchée périodiquement par sa mise sous tension et sa mise hors tension ; etune fibre à dispersion de vitesse de groupes, GVD, positive recevant une sortie de ladite source d'impulsions, et occasionnant une génération spectrale par automodulation de phase dans ladite fibre, dans lequel la dispersion GVD positive présente une valeur négative de dispersion lorsqu'elle est exprimée en unités ps/nm/km.
- Système comprenant :une source d'impulsions fournissant en sortie des impulsions qui sont inférieures ou égales à environ 10 ns à une fréquence de répétition dans une plage allant de 1 kHz à moins de 10 MHz, ladite source d'impulsions comprenant une diode laser cw (31), modulée extérieurement par un premier modulateur et un second modulateur disposé en tandem avec ledit premier modulateur ; etune fibre à dispersion de vitesse de groupes, GVD, positive recevant une sortie de ladite source d'impulsions, et occasionnant une génération spectrale par automodulation de phase dans ladite fibre, dans lequel la dispersion GVD positive présente une valeur négative de dispersion lorsqu'elle est exprimée en unités ps/nm/km.
- Système selon la revendication 1 ou 2, dans lequel ladite diode laser est modulée extérieurement en utilisant un modulateur au niobate de lithium ou un modulateur d'électro-absorption.
- Système selon la revendication 1 ou 2, dans lequel ladite source d'impulsions comprend un premier modulateur (32) recevant une sortie de ladite diode laser.
- Système selon la revendication 1 ou 2, dans lequel ledit système comprend en outre un premier amplificateur (33) recevant une sortie de ladite source d'impulsions, dans lequel ladite fibre de dispersion GVD positive reçoit une sortie dudit premier amplificateur (33).
- Système selon la revendication 5, dans lequel ledit système comprend en outre un second amplificateur agencé de manière à recevoir une sortie de ladite fibre de dispersion GVD positive.
- Système selon la revendication 6, dans lequel ledit second amplificateur opère en qualité d'amplificateur d'impulsion parabolique.
- Système selon la revendication 1 ou 2, dans lequel ladite source d'impulsions comprend un compresseur disposé en aval de ladite fibre à dispersion de vitesse de groupes, GVD, positive.
- Système selon la revendication 8, dans lequel ledit compresseur comprend un réseau de masse.
- Système selon la revendication 5, dans lequel ledit premier amplificateur (33) comprend un amplificateur à fibre dopée à l'ytterbium, YDFA.
- Système selon la revendication 6 ou 7, dans lequel ledit second amplificateur comprend un amplificateur à fibre dopée à l'ytterbium, YDFA.
Applications Claiming Priority (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/437,057 US7330301B2 (en) | 2003-05-14 | 2003-05-14 | Inexpensive variable rep-rate source for high-energy, ultrafast lasers |
EP04785507A EP1627252B1 (fr) | 2003-05-14 | 2004-05-14 | Source de frequence de recurrence variable bon marche pour lasers ultra rapides a energie elevee |
EP11176560.8A EP2393170B1 (fr) | 2003-05-14 | 2004-05-14 | Source de fréquence de récurrence variable bon marché pour lasers ultrarapides à énergie élevée |
EP12177514.2A EP2549598B1 (fr) | 2003-05-14 | 2004-05-14 | Source de fréquence de récurrence variable bon marché pour lasers ultrarapides à énergie élevée |
PCT/US2004/013302 WO2004104676A2 (fr) | 2003-05-14 | 2004-05-14 | Source de frequence de recurrence variable bon marche pour lasers ultra rapides a energie elevee |
Related Parent Applications (3)
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EP11176560.8A Division EP2393170B1 (fr) | 2003-05-14 | 2004-05-14 | Source de fréquence de récurrence variable bon marché pour lasers ultrarapides à énergie élevée |
EP04785507A Division EP1627252B1 (fr) | 2003-05-14 | 2004-05-14 | Source de frequence de recurrence variable bon marche pour lasers ultra rapides a energie elevee |
EP12177514.2A Division EP2549598B1 (fr) | 2003-05-14 | 2004-05-14 | Source de fréquence de récurrence variable bon marché pour lasers ultrarapides à énergie élevée |
Publications (2)
Publication Number | Publication Date |
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EP3070793A1 EP3070793A1 (fr) | 2016-09-21 |
EP3070793B1 true EP3070793B1 (fr) | 2019-11-06 |
Family
ID=33449722
Family Applications (4)
Application Number | Title | Priority Date | Filing Date |
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EP04785507A Expired - Lifetime EP1627252B1 (fr) | 2003-05-14 | 2004-05-14 | Source de frequence de recurrence variable bon marche pour lasers ultra rapides a energie elevee |
EP11176560.8A Expired - Lifetime EP2393170B1 (fr) | 2003-05-14 | 2004-05-14 | Source de fréquence de récurrence variable bon marché pour lasers ultrarapides à énergie élevée |
EP16154800.3A Expired - Lifetime EP3070793B1 (fr) | 2003-05-14 | 2004-05-14 | Source de fréquence de récurrence variable bon marché pour lasers ultrarapides à énergie élevée |
EP12177514.2A Expired - Lifetime EP2549598B1 (fr) | 2003-05-14 | 2004-05-14 | Source de fréquence de récurrence variable bon marché pour lasers ultrarapides à énergie élevée |
Family Applications Before (2)
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EP04785507A Expired - Lifetime EP1627252B1 (fr) | 2003-05-14 | 2004-05-14 | Source de frequence de recurrence variable bon marche pour lasers ultra rapides a energie elevee |
EP11176560.8A Expired - Lifetime EP2393170B1 (fr) | 2003-05-14 | 2004-05-14 | Source de fréquence de récurrence variable bon marché pour lasers ultrarapides à énergie élevée |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
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EP12177514.2A Expired - Lifetime EP2549598B1 (fr) | 2003-05-14 | 2004-05-14 | Source de fréquence de récurrence variable bon marché pour lasers ultrarapides à énergie élevée |
Country Status (5)
Country | Link |
---|---|
US (7) | US7330301B2 (fr) |
EP (4) | EP1627252B1 (fr) |
JP (2) | JP5449648B2 (fr) |
DK (1) | DK2549598T3 (fr) |
WO (1) | WO2004104676A2 (fr) |
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- 2004-05-14 JP JP2006532507A patent/JP5449648B2/ja not_active Expired - Lifetime
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- 2004-05-14 DK DK12177514.2T patent/DK2549598T3/en active
- 2004-05-14 EP EP16154800.3A patent/EP3070793B1/fr not_active Expired - Lifetime
- 2004-05-14 WO PCT/US2004/013302 patent/WO2004104676A2/fr active Application Filing
- 2004-05-14 EP EP12177514.2A patent/EP2549598B1/fr not_active Expired - Lifetime
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Also Published As
Publication number | Publication date |
---|---|
US7330301B2 (en) | 2008-02-12 |
US20170077669A1 (en) | 2017-03-16 |
US20040240037A1 (en) | 2004-12-02 |
US20080130099A1 (en) | 2008-06-05 |
US7483204B2 (en) | 2009-01-27 |
EP2393170B1 (fr) | 2014-01-08 |
EP2549598A3 (fr) | 2013-10-23 |
EP1627252A4 (fr) | 2010-05-26 |
EP1627252B1 (fr) | 2012-06-06 |
US20120300798A1 (en) | 2012-11-29 |
US20120269212A1 (en) | 2012-10-25 |
JP5449648B2 (ja) | 2014-03-19 |
DK2549598T3 (en) | 2016-05-17 |
EP2549598B1 (fr) | 2016-02-10 |
EP3070793A1 (fr) | 2016-09-21 |
EP1627252A2 (fr) | 2006-02-22 |
US8248690B2 (en) | 2012-08-21 |
US20090097520A1 (en) | 2009-04-16 |
WO2004104676A2 (fr) | 2004-12-02 |
US8587864B2 (en) | 2013-11-19 |
JP2013156650A (ja) | 2013-08-15 |
JP2007520735A (ja) | 2007-07-26 |
WO2004104676A3 (fr) | 2009-04-23 |
US8582201B2 (en) | 2013-11-12 |
US9553417B2 (en) | 2017-01-24 |
US20160322771A1 (en) | 2016-11-03 |
EP2393170A1 (fr) | 2011-12-07 |
US10014645B2 (en) | 2018-07-03 |
EP2549598A2 (fr) | 2013-01-23 |
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