EP3019915A1 - Procede d'orientation perpendiculaire de nanodomaines de copolymeres a blocs par l'utilisation de copolymeres statistiques ou a gradient dont les monomeres sont au moins en partie differents de ceux presents respectivement dans chacun des blocs du copolymere a blocs - Google Patents
Procede d'orientation perpendiculaire de nanodomaines de copolymeres a blocs par l'utilisation de copolymeres statistiques ou a gradient dont les monomeres sont au moins en partie differents de ceux presents respectivement dans chacun des blocs du copolymere a blocsInfo
- Publication number
- EP3019915A1 EP3019915A1 EP14747091.8A EP14747091A EP3019915A1 EP 3019915 A1 EP3019915 A1 EP 3019915A1 EP 14747091 A EP14747091 A EP 14747091A EP 3019915 A1 EP3019915 A1 EP 3019915A1
- Authority
- EP
- European Patent Office
- Prior art keywords
- block
- copolymer
- random
- copolymers
- monomers
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 229920001400 block copolymer Polymers 0.000 title claims abstract description 65
- 239000000178 monomer Substances 0.000 title claims abstract description 36
- 238000000034 method Methods 0.000 title claims abstract description 31
- 229920000028 Gradient copolymer Polymers 0.000 title claims abstract description 19
- 229920006301 statistical copolymer Polymers 0.000 title abstract description 11
- 239000000758 substrate Substances 0.000 claims abstract description 23
- -1 N-tert-butyl-1-diethylphosphono-2,2-dimethylpropyl nitroxide Chemical group 0.000 claims description 39
- 229920005604 random copolymer Polymers 0.000 claims description 36
- 229920000435 poly(dimethylsiloxane) Polymers 0.000 claims description 19
- PPBRXRYQALVLMV-UHFFFAOYSA-N Styrene Chemical compound C=CC1=CC=CC=C1 PPBRXRYQALVLMV-UHFFFAOYSA-N 0.000 claims description 17
- 239000004205 dimethyl polysiloxane Substances 0.000 claims description 17
- 238000004987 plasma desorption mass spectroscopy Methods 0.000 claims description 16
- 235000013870 dimethyl polysiloxane Nutrition 0.000 claims description 15
- CXQXSVUQTKDNFP-UHFFFAOYSA-N octamethyltrisiloxane Chemical compound C[Si](C)(C)O[Si](C)(C)O[Si](C)(C)C CXQXSVUQTKDNFP-UHFFFAOYSA-N 0.000 claims description 15
- 239000000470 constituent Substances 0.000 claims description 11
- 238000010526 radical polymerization reaction Methods 0.000 claims description 10
- 238000001338 self-assembly Methods 0.000 claims description 9
- VVQNEPGJFQJSBK-UHFFFAOYSA-N Methyl methacrylate Chemical compound COC(=O)C(C)=C VVQNEPGJFQJSBK-UHFFFAOYSA-N 0.000 claims description 7
- 238000001459 lithography Methods 0.000 claims description 6
- 238000011282 treatment Methods 0.000 claims description 6
- AVXURJPOCDRRFD-UHFFFAOYSA-N Hydroxylamine Chemical class ON AVXURJPOCDRRFD-UHFFFAOYSA-N 0.000 claims description 4
- 238000005204 segregation Methods 0.000 claims description 4
- 239000002356 single layer Substances 0.000 claims description 2
- 150000003254 radicals Chemical class 0.000 description 16
- 229920000747 poly(lactic acid) Polymers 0.000 description 15
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 15
- 239000004626 polylactic acid Substances 0.000 description 14
- 125000005262 alkoxyamine group Chemical group 0.000 description 13
- 239000004926 polymethyl methacrylate Substances 0.000 description 13
- 239000004793 Polystyrene Substances 0.000 description 12
- LYCAIKOWRPUZTN-UHFFFAOYSA-N ethylene glycol Natural products OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 10
- 229920000642 polymer Polymers 0.000 description 10
- 239000002904 solvent Substances 0.000 description 10
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 9
- 125000000217 alkyl group Chemical group 0.000 description 8
- 238000005530 etching Methods 0.000 description 8
- WGCNASOHLSPBMP-UHFFFAOYSA-N hydroxyacetaldehyde Natural products OCC=O WGCNASOHLSPBMP-UHFFFAOYSA-N 0.000 description 8
- 150000001252 acrylic acid derivatives Chemical class 0.000 description 7
- 229920001577 copolymer Polymers 0.000 description 7
- 239000010408 film Substances 0.000 description 7
- 230000003993 interaction Effects 0.000 description 7
- 239000010410 layer Substances 0.000 description 7
- 150000002734 metacrylic acid derivatives Chemical class 0.000 description 7
- 239000000203 mixture Substances 0.000 description 7
- 239000000126 substance Substances 0.000 description 7
- ZWEHNKRNPOVVGH-UHFFFAOYSA-N 2-Butanone Chemical compound CCC(C)=O ZWEHNKRNPOVVGH-UHFFFAOYSA-N 0.000 description 6
- 125000004432 carbon atom Chemical group C* 0.000 description 6
- 229910052757 nitrogen Inorganic materials 0.000 description 6
- 229920001610 polycaprolactone Polymers 0.000 description 6
- 238000006116 polymerization reaction Methods 0.000 description 6
- 229920000428 triblock copolymer Polymers 0.000 description 6
- NIXOWILDQLNWCW-UHFFFAOYSA-M Acrylate Chemical compound [O-]C(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-M 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- LLHKCFNBLRBOGN-UHFFFAOYSA-N propylene glycol methyl ether acetate Chemical compound COCC(C)OC(C)=O LLHKCFNBLRBOGN-UHFFFAOYSA-N 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 4
- IMNFDUFMRHMDMM-UHFFFAOYSA-N N-Heptane Chemical compound CCCCCCC IMNFDUFMRHMDMM-UHFFFAOYSA-N 0.000 description 4
- QYKIQEUNHZKYBP-UHFFFAOYSA-N Vinyl ether Chemical compound C=COC=C QYKIQEUNHZKYBP-UHFFFAOYSA-N 0.000 description 4
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 4
- 238000000137 annealing Methods 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 4
- 229910052799 carbon Inorganic materials 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 229910052740 iodine Inorganic materials 0.000 description 4
- 229920002521 macromolecule Polymers 0.000 description 4
- 239000011159 matrix material Substances 0.000 description 4
- 125000004433 nitrogen atom Chemical group N* 0.000 description 4
- 239000004632 polycaprolactone Substances 0.000 description 4
- 229920002223 polystyrene Polymers 0.000 description 4
- 239000012429 reaction media Substances 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 229960000834 vinyl ether Drugs 0.000 description 4
- ZCYVEMRRCGMTRW-UHFFFAOYSA-N 7553-56-2 Chemical compound [I] ZCYVEMRRCGMTRW-UHFFFAOYSA-N 0.000 description 3
- 229910020486 P2VP Inorganic materials 0.000 description 3
- 125000003545 alkoxy group Chemical group 0.000 description 3
- 125000003118 aryl group Chemical group 0.000 description 3
- 125000004429 atom Chemical group 0.000 description 3
- 238000002360 preparation method Methods 0.000 description 3
- 150000003839 salts Chemical class 0.000 description 3
- 150000003440 styrenes Chemical class 0.000 description 3
- 238000003786 synthesis reaction Methods 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- DTGKSKDOIYIVQL-WEDXCCLWSA-N (+)-borneol Chemical group C1C[C@@]2(C)[C@@H](O)C[C@@H]1C2(C)C DTGKSKDOIYIVQL-WEDXCCLWSA-N 0.000 description 2
- 229920002818 (Hydroxyethyl)methacrylate Polymers 0.000 description 2
- YPAURZBMECSUPE-UHFFFAOYSA-N 1-(2-hydroxyethyl)imidazolidin-2-one;2-methylprop-2-enoic acid Chemical compound CC(=C)C(O)=O.OCCN1CCNC1=O YPAURZBMECSUPE-UHFFFAOYSA-N 0.000 description 2
- KWKAKUADMBZCLK-UHFFFAOYSA-N 1-octene Chemical compound CCCCCCC=C KWKAKUADMBZCLK-UHFFFAOYSA-N 0.000 description 2
- DPBJAVGHACCNRL-UHFFFAOYSA-N 2-(dimethylamino)ethyl prop-2-enoate Chemical compound CN(C)CCOC(=O)C=C DPBJAVGHACCNRL-UHFFFAOYSA-N 0.000 description 2
- OMIGHNLMNHATMP-UHFFFAOYSA-N 2-hydroxyethyl prop-2-enoate Chemical compound OCCOC(=O)C=C OMIGHNLMNHATMP-UHFFFAOYSA-N 0.000 description 2
- WKBOTKDWSSQWDR-UHFFFAOYSA-N Bromine atom Chemical compound [Br] WKBOTKDWSSQWDR-UHFFFAOYSA-N 0.000 description 2
- KAKZBPTYRLMSJV-UHFFFAOYSA-N Butadiene Chemical compound C=CC=C KAKZBPTYRLMSJV-UHFFFAOYSA-N 0.000 description 2
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 2
- RRHGJUQNOFWUDK-UHFFFAOYSA-N Isoprene Chemical compound CC(=C)C=C RRHGJUQNOFWUDK-UHFFFAOYSA-N 0.000 description 2
- CERQOIWHTDAKMF-UHFFFAOYSA-M Methacrylate Chemical compound CC(=C)C([O-])=O CERQOIWHTDAKMF-UHFFFAOYSA-M 0.000 description 2
- BAPJBEWLBFYGME-UHFFFAOYSA-N Methyl acrylate Chemical compound COC(=O)C=C BAPJBEWLBFYGME-UHFFFAOYSA-N 0.000 description 2
- 229920003171 Poly (ethylene oxide) Polymers 0.000 description 2
- CIUQDSCDWFSTQR-UHFFFAOYSA-N [C]1=CC=CC=C1 Chemical compound [C]1=CC=CC=C1 CIUQDSCDWFSTQR-UHFFFAOYSA-N 0.000 description 2
- 238000010539 anionic addition polymerization reaction Methods 0.000 description 2
- 238000010560 atom transfer radical polymerization reaction Methods 0.000 description 2
- GDTBXPJZTBHREO-UHFFFAOYSA-N bromine Substances BrBr GDTBXPJZTBHREO-UHFFFAOYSA-N 0.000 description 2
- 229910052794 bromium Inorganic materials 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 229910052801 chlorine Inorganic materials 0.000 description 2
- 239000000460 chlorine Substances 0.000 description 2
- 125000000753 cycloalkyl group Chemical group 0.000 description 2
- MGNZXYYWBUKAII-UHFFFAOYSA-N cyclohexa-1,3-diene Chemical group C1CC=CC=C1 MGNZXYYWBUKAII-UHFFFAOYSA-N 0.000 description 2
- HGCIXCUEYOPUTN-UHFFFAOYSA-N cyclohexene Chemical group C1CCC=CC1 HGCIXCUEYOPUTN-UHFFFAOYSA-N 0.000 description 2
- 230000000593 degrading effect Effects 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 150000001993 dienes Chemical class 0.000 description 2
- 125000002573 ethenylidene group Chemical group [*]=C=C([H])[H] 0.000 description 2
- 238000001704 evaporation Methods 0.000 description 2
- 230000008020 evaporation Effects 0.000 description 2
- 230000009477 glass transition Effects 0.000 description 2
- 125000003055 glycidyl group Chemical group C(C1CO1)* 0.000 description 2
- 125000005843 halogen group Chemical group 0.000 description 2
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 2
- 239000011630 iodine Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- FQPSGWSUVKBHSU-UHFFFAOYSA-N methacrylamide Chemical class CC(=C)C(N)=O FQPSGWSUVKBHSU-UHFFFAOYSA-N 0.000 description 2
- 125000005395 methacrylic acid group Chemical group 0.000 description 2
- GDOPTJXRTPNYNR-UHFFFAOYSA-N methyl-cyclopentane Natural products CC1CCCC1 GDOPTJXRTPNYNR-UHFFFAOYSA-N 0.000 description 2
- VGHCMXLEZFMZOZ-UHFFFAOYSA-N n-tert-butyl-n-$l^{1}-oxidanyl-2-methyl-1-phenylpropan-1-amine Chemical compound CC(C)(C)N([O])C(C(C)C)C1=CC=CC=C1 VGHCMXLEZFMZOZ-UHFFFAOYSA-N 0.000 description 2
- 125000001624 naphthyl group Chemical group 0.000 description 2
- 238000012705 nitroxide-mediated radical polymerization Methods 0.000 description 2
- 230000008520 organization Effects 0.000 description 2
- 238000005191 phase separation Methods 0.000 description 2
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 2
- 210000002381 plasma Anatomy 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 229920001515 polyalkylene glycol Polymers 0.000 description 2
- 238000006068 polycondensation reaction Methods 0.000 description 2
- 229920001451 polypropylene glycol Polymers 0.000 description 2
- 239000011541 reaction mixture Substances 0.000 description 2
- 230000002441 reversible effect Effects 0.000 description 2
- 238000007151 ring opening polymerisation reaction Methods 0.000 description 2
- 230000007928 solubilization Effects 0.000 description 2
- 238000005063 solubilization Methods 0.000 description 2
- UZNHKBFIBYXPDV-UHFFFAOYSA-N trimethyl-[3-(2-methylprop-2-enoylamino)propyl]azanium;chloride Chemical compound [Cl-].CC(=C)C(=O)NCCC[N+](C)(C)C UZNHKBFIBYXPDV-UHFFFAOYSA-N 0.000 description 2
- BQCIDUSAKPWEOX-UHFFFAOYSA-N 1,1-Difluoroethene Chemical compound FC(F)=C BQCIDUSAKPWEOX-UHFFFAOYSA-N 0.000 description 1
- VXNZUUAINFGPBY-UHFFFAOYSA-N 1-Butene Chemical compound CCC=C VXNZUUAINFGPBY-UHFFFAOYSA-N 0.000 description 1
- LIKMAJRDDDTEIG-UHFFFAOYSA-N 1-hexene Chemical compound CCCCC=C LIKMAJRDDDTEIG-UHFFFAOYSA-N 0.000 description 1
- XLPJNCYCZORXHG-UHFFFAOYSA-N 1-morpholin-4-ylprop-2-en-1-one Chemical class C=CC(=O)N1CCOCC1 XLPJNCYCZORXHG-UHFFFAOYSA-N 0.000 description 1
- QTKPMCIBUROOGY-UHFFFAOYSA-N 2,2,2-trifluoroethyl 2-methylprop-2-enoate Chemical compound CC(=C)C(=O)OCC(F)(F)F QTKPMCIBUROOGY-UHFFFAOYSA-N 0.000 description 1
- 125000004206 2,2,2-trifluoroethyl group Chemical group [H]C([H])(*)C(F)(F)F 0.000 description 1
- SMZOUWXMTYCWNB-UHFFFAOYSA-N 2-(2-methoxy-5-methylphenyl)ethanamine Chemical compound COC1=CC=C(C)C=C1CCN SMZOUWXMTYCWNB-UHFFFAOYSA-N 0.000 description 1
- JAHNSTQSQJOJLO-UHFFFAOYSA-N 2-(3-fluorophenyl)-1h-imidazole Chemical compound FC1=CC=CC(C=2NC=CN=2)=C1 JAHNSTQSQJOJLO-UHFFFAOYSA-N 0.000 description 1
- GOXQRTZXKQZDDN-UHFFFAOYSA-N 2-Ethylhexyl acrylate Chemical compound CCCCC(CC)COC(=O)C=C GOXQRTZXKQZDDN-UHFFFAOYSA-N 0.000 description 1
- VHSHLMUCYSAUQU-UHFFFAOYSA-N 2-hydroxypropyl methacrylate Chemical compound CC(O)COC(=O)C(C)=C VHSHLMUCYSAUQU-UHFFFAOYSA-N 0.000 description 1
- HFCUBKYHMMPGBY-UHFFFAOYSA-N 2-methoxyethyl prop-2-enoate Chemical compound COCCOC(=O)C=C HFCUBKYHMMPGBY-UHFFFAOYSA-N 0.000 description 1
- FKLBRTJRFNSRJD-UHFFFAOYSA-N 2-methyl-6-trimethylsilylhex-1-en-3-one Chemical compound CC(=C)C(=O)CCC[Si](C)(C)C FKLBRTJRFNSRJD-UHFFFAOYSA-N 0.000 description 1
- 125000003903 2-propenyl group Chemical group [H]C([*])([H])C([H])=C([H])[H] 0.000 description 1
- KGIGUEBEKRSTEW-UHFFFAOYSA-N 2-vinylpyridine Chemical compound C=CC1=CC=CC=N1 KGIGUEBEKRSTEW-UHFFFAOYSA-N 0.000 description 1
- WIYVVIUBKNTNKG-UHFFFAOYSA-N 6,7-dimethoxy-3,4-dihydronaphthalene-2-carboxylic acid Chemical compound C1CC(C(O)=O)=CC2=C1C=C(OC)C(OC)=C2 WIYVVIUBKNTNKG-UHFFFAOYSA-N 0.000 description 1
- NUXLDNTZFXDNBA-UHFFFAOYSA-N 6-bromo-2-methyl-4h-1,4-benzoxazin-3-one Chemical compound C1=C(Br)C=C2NC(=O)C(C)OC2=C1 NUXLDNTZFXDNBA-UHFFFAOYSA-N 0.000 description 1
- HRPVXLWXLXDGHG-UHFFFAOYSA-N Acrylamide Chemical compound NC(=O)C=C HRPVXLWXLXDGHG-UHFFFAOYSA-N 0.000 description 1
- NLHHRLWOUZZQLW-UHFFFAOYSA-N Acrylonitrile Chemical compound C=CC#N NLHHRLWOUZZQLW-UHFFFAOYSA-N 0.000 description 1
- JIJFDVNVQIXRLZ-UHFFFAOYSA-N CC(C(O)=O)=C.CC(C(O)=O)=C.CC(C(O)=O)=C.P Chemical class CC(C(O)=O)=C.CC(C(O)=O)=C.CC(C(O)=O)=C.P JIJFDVNVQIXRLZ-UHFFFAOYSA-N 0.000 description 1
- 239000004215 Carbon black (E152) Substances 0.000 description 1
- BVKZGUZCCUSVTD-UHFFFAOYSA-L Carbonate Chemical compound [O-]C([O-])=O BVKZGUZCCUSVTD-UHFFFAOYSA-L 0.000 description 1
- XDTMQSROBMDMFD-UHFFFAOYSA-N Cyclohexane Chemical group C1CCCCC1 XDTMQSROBMDMFD-UHFFFAOYSA-N 0.000 description 1
- VGGSQFUCUMXWEO-UHFFFAOYSA-N Ethene Chemical compound C=C VGGSQFUCUMXWEO-UHFFFAOYSA-N 0.000 description 1
- JIGUQPWFLRLWPJ-UHFFFAOYSA-N Ethyl acrylate Chemical compound CCOC(=O)C=C JIGUQPWFLRLWPJ-UHFFFAOYSA-N 0.000 description 1
- 239000005977 Ethylene Substances 0.000 description 1
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 1
- WOBHKFSMXKNTIM-UHFFFAOYSA-N Hydroxyethyl methacrylate Chemical compound CC(=C)C(=O)OCCO WOBHKFSMXKNTIM-UHFFFAOYSA-N 0.000 description 1
- CNCOEDDPFOAUMB-UHFFFAOYSA-N N-Methylolacrylamide Chemical class OCNC(=O)C=C CNCOEDDPFOAUMB-UHFFFAOYSA-N 0.000 description 1
- WHNWPMSKXPGLAX-UHFFFAOYSA-N N-Vinyl-2-pyrrolidone Chemical compound C=CN1CCCC1=O WHNWPMSKXPGLAX-UHFFFAOYSA-N 0.000 description 1
- YACTZEZVNPAVGJ-UHFFFAOYSA-N P.C(=O)(O)C=C.C(=O)(O)C=C.C(=O)(O)C=C Chemical class P.C(=O)(O)C=C.C(=O)(O)C=C.C(=O)(O)C=C YACTZEZVNPAVGJ-UHFFFAOYSA-N 0.000 description 1
- 208000034530 PLAA-associated neurodevelopmental disease Diseases 0.000 description 1
- ABLZXFCXXLZCGV-UHFFFAOYSA-N Phosphorous acid Chemical group OP(O)=O ABLZXFCXXLZCGV-UHFFFAOYSA-N 0.000 description 1
- OFOBLEOULBTSOW-UHFFFAOYSA-N Propanedioic acid Natural products OC(=O)CC(O)=O OFOBLEOULBTSOW-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 150000003926 acrylamides Chemical class 0.000 description 1
- 125000003342 alkenyl group Chemical group 0.000 description 1
- 125000005250 alkyl acrylate group Chemical group 0.000 description 1
- 125000000746 allylic group Chemical group 0.000 description 1
- XYLMUPLGERFSHI-UHFFFAOYSA-N alpha-Methylstyrene Chemical compound CC(=C)C1=CC=CC=C1 XYLMUPLGERFSHI-UHFFFAOYSA-N 0.000 description 1
- 125000000129 anionic group Chemical group 0.000 description 1
- 125000003710 aryl alkyl group Chemical group 0.000 description 1
- 125000002102 aryl alkyloxo group Chemical group 0.000 description 1
- 150000005840 aryl radicals Chemical class 0.000 description 1
- 125000004104 aryloxy group Chemical group 0.000 description 1
- 230000005587 bubbling Effects 0.000 description 1
- IAQRGUVFOMOMEM-UHFFFAOYSA-N butene Natural products CC=CC IAQRGUVFOMOMEM-UHFFFAOYSA-N 0.000 description 1
- CQEYYJKEWSMYFG-UHFFFAOYSA-N butyl acrylate Chemical compound CCCCOC(=O)C=C CQEYYJKEWSMYFG-UHFFFAOYSA-N 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 239000003054 catalyst Substances 0.000 description 1
- 125000002091 cationic group Chemical group 0.000 description 1
- 238000010538 cationic polymerization reaction Methods 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 125000004122 cyclic group Chemical group 0.000 description 1
- 125000000113 cyclohexyl group Chemical group [H]C1([H])C([H])([H])C([H])([H])C([H])(*)C([H])([H])C1([H])[H] 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 229920000359 diblock copolymer Polymers 0.000 description 1
- 238000004090 dissolution Methods 0.000 description 1
- 125000003438 dodecyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 150000002148 esters Chemical class 0.000 description 1
- RTZKZFJDLAIYFH-UHFFFAOYSA-N ether Substances CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 1
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- 238000001914 filtration Methods 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 238000013467 fragmentation Methods 0.000 description 1
- 238000006062 fragmentation reaction Methods 0.000 description 1
- 150000002290 germanium Chemical class 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 229910021389 graphene Inorganic materials 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 125000005842 heteroatom Chemical group 0.000 description 1
- 229920001519 homopolymer Polymers 0.000 description 1
- 229930195733 hydrocarbon Natural products 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 1
- 125000002768 hydroxyalkyl group Chemical group 0.000 description 1
- 125000002632 imidazolidinyl group Chemical group 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- 239000013033 iniferter Substances 0.000 description 1
- 239000003999 initiator Substances 0.000 description 1
- 229910052500 inorganic mineral Inorganic materials 0.000 description 1
- PNDPGZBMCMUPRI-UHFFFAOYSA-N iodine Chemical compound II PNDPGZBMCMUPRI-UHFFFAOYSA-N 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- JVTAAEKCZFNVCJ-UHFFFAOYSA-N lactic acid Chemical compound CC(O)C(O)=O JVTAAEKCZFNVCJ-UHFFFAOYSA-N 0.000 description 1
- 229920001427 mPEG Polymers 0.000 description 1
- VZCYOOQTPOCHFL-UPHRSURJSA-N maleic acid Chemical compound OC(=O)\C=C/C(O)=O VZCYOOQTPOCHFL-UPHRSURJSA-N 0.000 description 1
- 239000011976 maleic acid Substances 0.000 description 1
- 150000002688 maleic acid derivatives Chemical class 0.000 description 1
- FPYJFEHAWHCUMM-UHFFFAOYSA-N maleic anhydride Chemical compound O=C1OC(=O)C=C1 FPYJFEHAWHCUMM-UHFFFAOYSA-N 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- LVHBHZANLOWSRM-UHFFFAOYSA-N methylenebutanedioic acid Natural products OC(=O)CC(=C)C(O)=O LVHBHZANLOWSRM-UHFFFAOYSA-N 0.000 description 1
- 239000011707 mineral Substances 0.000 description 1
- 239000007777 multifunctional material Substances 0.000 description 1
- DNTMQTKDNSEIFO-UHFFFAOYSA-N n-(hydroxymethyl)-2-methylprop-2-enamide Chemical class CC(=C)C(=O)NCO DNTMQTKDNSEIFO-UHFFFAOYSA-N 0.000 description 1
- TVMXDCGIABBOFY-UHFFFAOYSA-N n-Octanol Natural products CCCCCCCC TVMXDCGIABBOFY-UHFFFAOYSA-N 0.000 description 1
- 238000005329 nanolithography Methods 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- 229910052755 nonmetal Inorganic materials 0.000 description 1
- 239000003921 oil Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- MUMZUERVLWJKNR-UHFFFAOYSA-N oxoplatinum Chemical class [Pt]=O MUMZUERVLWJKNR-UHFFFAOYSA-N 0.000 description 1
- VVRQVWSVLMGPRN-UHFFFAOYSA-N oxotungsten Chemical class [W]=O VVRQVWSVLMGPRN-UHFFFAOYSA-N 0.000 description 1
- PNJWIWWMYCMZRO-UHFFFAOYSA-N pent‐4‐en‐2‐one Natural products CC(=O)CC=C PNJWIWWMYCMZRO-UHFFFAOYSA-N 0.000 description 1
- 125000005010 perfluoroalkyl group Chemical group 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 229910003446 platinum oxide Inorganic materials 0.000 description 1
- 229920000885 poly(2-vinylpyridine) Polymers 0.000 description 1
- 229920005589 poly(ferrocenylsilane) Polymers 0.000 description 1
- 229920001223 polyethylene glycol Polymers 0.000 description 1
- 229920005553 polystyrene-acrylate Polymers 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 229930195734 saturated hydrocarbon Natural products 0.000 description 1
- 150000003376 silicon Chemical class 0.000 description 1
- 238000001542 size-exclusion chromatography Methods 0.000 description 1
- 238000002174 soft lithography Methods 0.000 description 1
- 238000000654 solvent vapour annealing Methods 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- VZCYOOQTPOCHFL-UHFFFAOYSA-N trans-butenedioic acid Natural products OC(=O)C=CC(O)=O VZCYOOQTPOCHFL-UHFFFAOYSA-N 0.000 description 1
- 230000001960 triggered effect Effects 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 229910001930 tungsten oxide Inorganic materials 0.000 description 1
- 229930195735 unsaturated hydrocarbon Natural products 0.000 description 1
- 125000000391 vinyl group Chemical group [H]C([*])=C([H])[H] 0.000 description 1
- 229920002554 vinyl polymer Polymers 0.000 description 1
- 238000009736 wetting Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/0002—Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
- C09D153/00—Coating compositions based on block copolymers containing at least one sequence of a polymer obtained by reactions only involving carbon-to-carbon unsaturated bonds; Coating compositions based on derivatives of such polymers
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
Definitions
- the present invention relates to a method of perpendicular orientation of nano-domains of block copolymers on a substrate by the use of a sub-layer of random or gradient copolymers whose monomers are at least partly different from those present respectively in each of the blocks of the block copolymer
- This method is advantageously used in lithography.
- ⁇ is equal to 0.04 for the PS / PMMA pair, to 393K, while for PS / PDMS (poly (dimethylsiloxane)) it is 0.191, for PS / P2VP (poly (2 vinyl pyridine)) it is 0.178, for PS / PEO (polyethylene oxide) it is 0.077 and for PDMS / PLA (poly (lactic acid)) it is 1.1 .
- This parameter associated with the strong contrast during the etching between PLA and PDMS, allows a better definition of the domains and thus to go to sizes of domains lower than 22 nm.
- PLA Another block of interest that can be advantageously associated with the PDMS is PLA.
- Poly lactic acid is distinguished by its degradability which makes it easy to degrade by chemical or plasma during the step of creating the copolymer mask (it is twice as sensitive to etching as the PS, this which means that it can be degraded much more easily). It is easier to synthesize and inexpensive.
- the invention relates to a method for controlling the orientation of a block copolymer mesostructure by means of a random or gradient copolymer whose constituent monomers are at least partly different from those respectively present in each of the blocks of the copolymer. blocks, comprising the following steps:
- the statistical or gradient copolymers used in the invention may be of any type provided that their constituent monomers are at least partly different. those present respectively in each block of the block copolymer used in the invention.
- one of the constituent monomers of the random copolymers of the invention is once polymerized miscible in one of the block copolymer blocks used in the invention.
- the random copolymers may be obtained by any route including polycondensation, ring-opening polymerization, anionic, cationic or radical polymerization, the latter being controllable or not.
- the polymers are prepared by radical polymerization or telomerization, this can be controlled by any known technique such as NMP ("Nitroxide Mediated Polymerization"), RAFT ("Reversible Addition and Fragmentation Transfer”), ATRP ("Atom Transfer Radical Polymerization”). "), INIFERTER (" Initiator-Transfer-
- ITP Iodine Transfer Polymerization
- the polymers are preferably prepared by radical polymerization, and more particularly by controlled radical polymerization, more particularly by controlled nitroxide polymerization.
- nitroxides derived from alkoxyamines derived from the stable free radical (1) are preferred.
- the radical R 1 has a molar mass greater than 15.034 g / mol.
- the radical R 1 can be a halogen atom such as chlorine, bromine or iodine, a linear, branched or cyclic, saturated or unsaturated hydrocarbon-based group such as an alkyl or phenyl radical, or an ester - COOR or an alkoxyl group -OR, or a phosphonate group -PO (OR) 2 > as long as it has a molar mass greater than 15.0342.
- the monovalent radical R- ⁇ is said in position ⁇ with respect to the nitrogen atom of the nitroxide radical.
- the remaining valences of the carbon atom and the nitrogen atom in the formula (1) can be linked to various radicals such as a hydrogen atom, a hydrocarbon radical such as an alkyl, aryl or aryl radical. -alkyl, comprising from 1 to 10 carbon atoms. It is not excluded that the carbon atom and the nitrogen atom in the formula (1) are connected to each other via a divalent radical, so as to form a ring. Preferably, however, the remaining valencies of the carbon atom and the nitrogen atom of the formula (1) are attached to monovalent radicals.
- the radical R 1 has a molar mass greater than 30 g / mol.
- the radical R 1 may, for example, have a molar mass of between 40 and 450 g / mol.
- the radical R 1 may be a radical comprising a phosphoryl group, said radical R 1 may be represented by the formula: R ⁇
- R and R which may be the same or different, may be selected from alkyl, cycloalkyl, alkoxyl, aryloxyl, aryl, aralkyloxy, perfluoroalkyl, aralkyl, and may include from 1 to 20 carbon atoms.
- R 1 and / or R 1 may also be a halogen atom such as a chlorine or bromine or fluorine or iodine atom.
- the radical R 1 may also comprise at least one aromatic ring as for the phenyl radical or the naphthyl radical, the latter may be substituted, for example by an alkyl radical comprising from 1 to 4 carbon atoms.
- alkoxyamines derived from the following stable radicals are preferred:
- alkoxyamines used in controlled radical polymerization must allow good control of the sequence of monomers. Thus they do not all allow good control of certain monomers.
- the alkoxyamines derived from TEMPO only make it possible to control a limited number of monomers, the same goes for the alkoxyamines derived from 2,2,5-tri-methyl-4-phenyl-3-azahexane-3-nitroxide. (TIPNO).
- alkoxyamines derived from nitroxides corresponding to formula (1) particularly those derived from nitroxides corresponding to formula (2) and even more particularly those derived from N-tert-butyl-1-diethylphosphono-2, 2-dimethylpropyl. nitroxide allow to expand to a large number of monomer controlled radical polymerization of these monomers.
- alkoxyamines also influences the economic factor. The use of low temperatures will be preferred to minimize industrial difficulties.
- Alkoxyamines derived from nitroxides corresponding to formula (1), particularly those derived from nitroxides corresponding to formula (2) and even more particularly those derived from N-tert-butyl-1-diethylphosphono-2, 2-dimethylpropyl nitroxide, will thus be preferred.
- the constituent monomers of the random copolymers will be chosen from vinyl, vinylidene, diene, olefinic, allylic or (meth) acrylic monomers. These monomers are chosen more particularly from vinylaromatic monomers such as styrene or substituted styrenes, in particular Alpha-methylstyrene, acrylic monomers such as acrylic acid or its salts, alkyl acrylates, cycloalkyl acrylates or aryl acrylates such as methyl acrylate, ethyl acrylate, butyl acrylate, ethylhexyl acrylate or phenyl, hydroxyalkyl acrylates such as 2-hydroxyethyl acrylate, alkyl ether acrylates such as 2-methoxyethyl acrylate, alkoxy- or aryloxy-polyalkylene glycol acrylates such as methoxypolyethylene glycol acrylates, ethoxypolyethylene glycol acrylates,
- the constituent monomers of the random copolymers will be chosen from styrene or (meth) acrylic monomers, and more particularly styrene and methyl methacrylate.
- the number-average molecular mass of the random copolymers used in the invention may be between 500 g / mol and 100 000 g / mol and preferably between 1000 g / mol and 20 000 g / mol, and even more particularly between 2000 g / mol and 10000 g / mol with a dispersity index of 1.00 to 10 and preferably from 1.05 to 3, more particularly between 1.05 and 2.
- the block copolymers used in the invention may be of any type (diblock, triblock, multiblock, gradient, star) provided that their constituent monomers are of a different chemical nature from those present in the copolymers. statistics used in the invention.
- the block copolymers used in the invention may be prepared by any synthetic route such as anionic polymerization, polycondensation of oligomers, ring opening polymerization, or controlled radical polymerization.
- PLA polytrimethyl carbonate
- PCL polycaprolactone
- the block copolymers used in the invention will be chosen from the following: PLA-PDMS, PLA-PDMS-PLA, PTMC-PDMS-PTMC, PCL-PDMS-PCL, PTMC-PCL, PTMC-PCL-PTMC, PCL -PTMC PCL. And more particularly PLA-PDMS-PLA, PTMC-PDMS-PTMC.
- block copolymers one of whose blocks contains styrene and at least one X comonomer, the other block containing methyl methacrylate and at least one Y comonomer
- X being chosen from among the entities hydrogenated or partially hydrogenated styrene, cyclohexadiene, cyclohexene, cyclohexane, styrene substituted with one or more fluorinated alkyl groups, or mixtures thereof in a mass proportion of X ranging from 1 to 99% and preferably from 10 to 80% relative to block containing styrene
- Y being selected from the following: fluorinated alkyl (meth) acrylate, particularly trifluoroethyl methacrylate, dimethyl aminoethyl (meth) acrylate, globular (meth) acrylates such as isobornyl (meth) acrylates, halogenated isobornyl, halogenated
- naphthyl (meth) acrylate polyhedral oligomeric silsesquioxane (meth) acrylate which may contain a fluorinated group, or mixtures thereof, in mass proportions of Y ranging from 1 to 99% and preferably from 10 to 80% relative to the block containing methyl methacrylate.
- the number-average molecular weight of the block copolymers used in the invention measured by SEC with polystyrene standards, it may be between 2000 g / mol and 80 000 g / mol and preferably between 4000 g / mol and 20 000 g / mol, and even more particularly between 6000 g / mol and 15000 g / mol with a dispersity index of 1.00 to 2 and preferably 1.05 and 1.4.
- the different mesostructures of the block copolymers depend on the volume fractions of the blocks.
- block copolymers having high values of x will have a strong phase separation of the blocks. Indeed, this parameter is relative to the interactions between the strings of each of the blocks.
- a high value of ⁇ means that the blocks move as far apart as possible, which will result in a good resolution of the blocks, and therefore a low line roughness.
- Flory-Huggins parameter block copolymer systems that are high (that is to say greater than 0.1 to 298 K) and more particularly polymer blocks containing heteroatoms (atoms other than C and H) will thus be favored. , and even more particularly Si atoms.
- Treatments adapted to the phase segregation inherent to self-assembly of block copolymers may be thermal annealing, typically above the glass transition temperature (Tg) of the blocks, ranging from 10 to 150 ° C above the highest Tg, exposure to solvent vapors, or combination of these two treatments.
- Tg glass transition temperature
- it is a heat treatment whose temperature will be a function of the chosen blocks. If appropriate, for example when the blocks are judiciously chosen, a simple evaporation of the solvent will suffice, at room temperature, to promote the self-assembly of the block copolymer.
- the process of the invention is applicable to the following substrates: silicon, silicon having a native or thermal oxide layer, hydrogenated or halogenated silicon, germanium, hydrogenated or halogenated germanium, platinum and platinum oxides, tungsten and tungsten oxides, gold, titanium nitrides, graphenes.
- the surface is mineral and more preferably silicon. Even more preferably, the surface is silicon having a native or thermal oxide layer.
- the process of the invention used to control the orientation of a block copolymer mesostructure by means of a random copolymer consists in depositing preferably the randomly dissolved or dispersed statistical copolymers in a suitable solvent according to techniques known to the art. skilled in the art such as the so-called “spin coating” technique, “Doctor Blade””knifeSystem”,”slot die System” but any other technique can be used such as a dry deposit, that is to say without going through a prior dissolution.
- the method of the invention will aim to form a random copolymer layer typically less than 10 nm and preferably less than 5 nm.
- the block copolymer used in the process of the invention will then be deposited according to a similar technique, then subjected to the treatment allowing the segregation of the phases inherent to the self-assembly of the block copolymers.
- the block copolymers deposited on the surfaces treated by the process of the invention are preferably di-block copolymers or linear or star-shaped triblock copolymers.
- the surfaces treated by the process of the invention will be used in lithography, membrane preparation applications.
- toluene In a stainless steel reactor equipped with a mechanical stirrer and a jacket are introduced toluene, as well as monomers such as styrene (S), methyl methacrylate (MMA), and hydroxy functionalized alkoxyamine .
- S styrene
- MMA methyl methacrylate
- Table 1 The mass ratios between the various styrene (S) and methyl methacrylate (MMA) monomers are described in Table 1.
- the mass load of toluene is set at 30% relative to the reaction medium.
- the reaction mixture is stirred and degassed by bubbling nitrogen at room temperature for 30 minutes.
- the temperature of the reaction medium is then raised to 115 ° C.
- the temperature is maintained at 115 ° C. throughout the polymerization until reaching a monomer conversion of about 70%. Samples are taken at regular intervals to determine the kinetics of gravimetric polymerization (measurement of dry extract).
- the reaction medium When the 70% conversion is reached, the reaction medium is cooled to 60 ° C and the solvent and residual monomers are evaporated under vacuum. After evaporation, the methyl ethyl ketone is added to the reaction medium in an amount such that a polymer solution of the order of 25 ⁇ 6 mass is produced.
- This polymer solution is then introduced dropwise into a beaker containing a non-solvent (heptane), so as to precipitate the polymer.
- a non-solvent heptane
- the precipitated polymer is recovered as a white powder after filtration and drying.
- EXAMPLE 3 Synthesis of the PLA-PDMS-PLA Triblock Copolymer
- the products used for this synthesis are an HO-PDMS-OH initiator and homopolymer marketed by Sigma-Aldrich, a racemic lactic acid, in order to avoid any problem related to crystallization. , an organic catalyst to avoid metal contamination problems, triazabicyclodecene (TBD) and toluene.
- TBD triazabicyclodecene
- the volume fractions of the blocks were determined to obtain PLA cylinders in a PDMS matrix, i.e., about 70% PDMS and 30% PLA.
- Example 4 Self-assembly of a triblock copolymer PLA-b-PDMS-b-PLA
- the block copolymer described in this study was chosen according to the needs of the lithography, that is to say the cylinders in a matrix, used as masks for the creation of cylindrical holes in a substrate after etching and degradation. .
- the desired morphology is therefore PLA cylinders in a PDMS matrix.
- 1st step Grafting a layer of random copolymer.
- a random copolymer brush prepared according to Example 2 is first deposited on the substrate in order to modify the surface energy, and therefore the preferential interactions between the blocks and the interfaces.
- the random copolymer is solubilized in a suitable solvent, PGMEA (Propylene Glycol Monomethyl Ether Acetate).
- PGMEA Polypropylene Glycol Monomethyl Ether Acetate
- the concentration of the solution can vary from 0.5 to 5%, and more precisely from 1 to 3%.
- the chain attached density is limited by the length of the chains of the random copolymer, by its molecular weight and by its radius of gyration; thus having a concentration higher than 5% is not necessary.
- the solution is filtered through 0.2 ⁇ m filters.
- the substrate is cut and cleaned with the same solvent, PGMEA, and then dried with compressed air. Then, the substrate is deposited on the spin, and 100yL of solution are deposited on the substrate. The spin is finally started. After the deposition is complete, and the solvent evaporated, the film is placed in a vacuum oven for 48 hours at 170 ° C. so that the grafting proceeds.
- the film is rinsed with PGMEA so removing the excess of random copolymer not grafted to the substrate, and then dried with compressed air.
- the block copolymer in Example 3 is solubilized in PGMEA.
- the concentration of the solution is between 0.5 and 10%, and more precisely between 1 and 4%.
- the thickness of the film depends on the concentration of the solution, the higher the concentration and the thicker the film. So the concentration is the parameter to vary according to the desired film thickness.
- the solution is filtered through 0.2 ⁇ m filters.
- the grafted substrate is deposited on the spin, and then 100 ⁇ L of solution containing the block copolymer of Example 3 are deposited on the substrate.
- the spin is started.
- a thermal annealing of one and a half hours at 180 ° C is then used to help the self-organization of the meso structure.
- Example 2 on the self-organization of the block copolymer of Example 3.
- Example 2 on the self-organization of the block copolymer of Example 3.
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Materials Engineering (AREA)
- Wood Science & Technology (AREA)
- Organic Chemistry (AREA)
- Life Sciences & Earth Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Graft Or Block Polymers (AREA)
- Nanotechnology (AREA)
- Other Resins Obtained By Reactions Not Involving Carbon-To-Carbon Unsaturated Bonds (AREA)
- Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
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Abstract
Description
Claims
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
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FR1356831A FR3008413B1 (fr) | 2013-07-11 | 2013-07-11 | Procede d'orientation perpendiculaire de nanodomaines de copolymeres a blocs par l'utilisation de copolymeres statistiques ou a gradient dont les monomeres sont au moins en partie differents de ceux presents respectivement dans chacun des blocs du copolymere a blocs |
PCT/FR2014/051771 WO2015004392A1 (fr) | 2013-07-11 | 2014-07-10 | Procede d'orientation perpendiculaire de nanodomaines de copolymeres a blocs par l'utilisation de copolymeres statistiques ou a gradient dont les monomeres sont au moins en partie differents de ceux presents respectivement dans chacun des blocs du copolymere a blocs |
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EP14747091.8A Withdrawn EP3019915A1 (fr) | 2013-07-11 | 2014-07-10 | Procede d'orientation perpendiculaire de nanodomaines de copolymeres a blocs par l'utilisation de copolymeres statistiques ou a gradient dont les monomeres sont au moins en partie differents de ceux presents respectivement dans chacun des blocs du copolymere a blocs |
Country Status (8)
Country | Link |
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US (1) | US20160154302A1 (fr) |
EP (1) | EP3019915A1 (fr) |
JP (1) | JP6143955B2 (fr) |
KR (1) | KR101779729B1 (fr) |
CN (1) | CN105492971B (fr) |
FR (1) | FR3008413B1 (fr) |
SG (1) | SG11201600135PA (fr) |
WO (1) | WO2015004392A1 (fr) |
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FR3045644A1 (fr) * | 2015-12-18 | 2017-06-23 | Arkema France | Procede d'obtention de films ordonnes epais et de periodes elevees comprenant un copolymere a blocs |
FR3045642A1 (fr) * | 2015-12-18 | 2017-06-23 | Arkema France | Procede de reduction du temps de structuration de films ordonnes de copolymere a blocs |
FR3045643A1 (fr) * | 2015-12-18 | 2017-06-23 | Arkema France | Procede d'amelioration de l'uniformite de dimension critique de films ordonnes de copolymere a blocs |
FR3045645B1 (fr) * | 2015-12-18 | 2019-07-05 | Arkema France | Procede de reduction des defauts dans un film ordonne de copolymeres a blocs |
KR102396957B1 (ko) * | 2017-08-22 | 2022-05-13 | 에스케이이노베이션 주식회사 | 중성층 형성용 랜덤 공중합체 및 이를 포함하는 패턴 형성용 적층체, 이를 이용한 패턴 형성 방법 |
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US20110147984A1 (en) * | 2009-12-18 | 2011-06-23 | Joy Cheng | Methods of directed self-assembly, and layered structures formed therefrom |
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FR2784111B1 (fr) * | 1998-10-06 | 2003-08-01 | Atochem Elf Sa | Polymerisatin radicalaire en presence de plusieurs radicaux libres stables |
CN1283692C (zh) * | 2002-07-12 | 2006-11-08 | 天津大学 | 聚乙二醇-b-聚乳酸两亲性二嵌段共聚物的制备方法 |
JP4024669B2 (ja) * | 2002-12-24 | 2007-12-19 | 株式会社カネカ | 末端に重合性炭素―炭素二重結合を持つ基を有するビニル系重合体の安定化方法 |
US9028859B2 (en) * | 2006-07-07 | 2015-05-12 | Advanced Cardiovascular Systems, Inc. | Phase-separated block copolymer coatings for implantable medical devices |
US8080615B2 (en) * | 2007-06-19 | 2011-12-20 | Micron Technology, Inc. | Crosslinkable graft polymer non-preferentially wetted by polystyrene and polyethylene oxide |
US7763319B2 (en) * | 2008-01-11 | 2010-07-27 | International Business Machines Corporation | Method of controlling orientation of domains in block copolymer films |
US7989026B2 (en) * | 2008-01-12 | 2011-08-02 | International Business Machines Corporation | Method of use of epoxy-containing cycloaliphatic acrylic polymers as orientation control layers for block copolymer thin films |
US7521094B1 (en) * | 2008-01-14 | 2009-04-21 | International Business Machines Corporation | Method of forming polymer features by directed self-assembly of block copolymers |
US7850107B2 (en) * | 2008-12-15 | 2010-12-14 | Loftness Specialized Equipment, Inc. | Rotor for tree mulching machine |
KR101535227B1 (ko) * | 2008-12-31 | 2015-07-08 | 삼성전자주식회사 | 블록 공중합체를 이용한 미세 패턴 형성 방법 |
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- 2014-07-10 US US14/904,325 patent/US20160154302A1/en not_active Abandoned
- 2014-07-10 WO PCT/FR2014/051771 patent/WO2015004392A1/fr active Application Filing
- 2014-07-10 EP EP14747091.8A patent/EP3019915A1/fr not_active Withdrawn
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CN105492971A (zh) | 2016-04-13 |
JP2016525592A (ja) | 2016-08-25 |
FR3008413A1 (fr) | 2015-01-16 |
FR3008413B1 (fr) | 2015-08-07 |
SG11201600135PA (en) | 2016-02-26 |
CN105492971B (zh) | 2019-09-10 |
WO2015004392A1 (fr) | 2015-01-15 |
US20160154302A1 (en) | 2016-06-02 |
KR20160040579A (ko) | 2016-04-14 |
KR101779729B1 (ko) | 2017-09-18 |
JP6143955B2 (ja) | 2017-06-07 |
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