EP2981634A1 - Dispositif de traitement sous vide de substrats - Google Patents

Dispositif de traitement sous vide de substrats

Info

Publication number
EP2981634A1
EP2981634A1 EP14720497.8A EP14720497A EP2981634A1 EP 2981634 A1 EP2981634 A1 EP 2981634A1 EP 14720497 A EP14720497 A EP 14720497A EP 2981634 A1 EP2981634 A1 EP 2981634A1
Authority
EP
European Patent Office
Prior art keywords
vacuum chamber
substrates
side wall
chamber
process chamber
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP14720497.8A
Other languages
German (de)
English (en)
Inventor
Harro Hagedorn
Jürgen PISTNER
Thomas Vogt
Alexander Müller
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Buehler Alzenau GmbH
Original Assignee
Buehler Alzenau GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Buehler Alzenau GmbH filed Critical Buehler Alzenau GmbH
Publication of EP2981634A1 publication Critical patent/EP2981634A1/fr
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
    • C23C14/564—Means for minimising impurities in the coating chamber such as dust, moisture, residual gases
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
    • C23C14/568—Transferring the substrates through a series of coating stations
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32458—Vessel
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32458—Vessel
    • H01J37/32477—Vessel characterised by the means for protecting vessels or internal parts, e.g. coatings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H01J37/32633—Baffles
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H01J37/32816—Pressure
    • H01J37/32834—Exhausting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3447—Collimators, shutters, apertures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
    • H01L21/67742—Mechanical parts of transfer devices

Definitions

  • the invention relates to a device for vacuum treatment of substrates according to the preamble of the independent claim.
  • a plasma process apparatus which comprises a chamber, a substrate stage, an electrode for generating plasma inside the chamber and a shielding means surrounding a plasma space between electrode and substrate stage.
  • the shielding device comprises a main part and a separated part, wherein the main part and the separated part each have an inner portion and an outer portion, wherein the outer portion respectively as
  • Gas line device is formed.
  • the inner portion of the main part and the inner portion of the separated part are formed so as not to be in contact with each other.
  • a movable shield surrounds a pedestal, the shield having a structure that creates a variable opening in the chamber when the shield
  • Shield includes a first apartment area forming a first flow path and a second apartment area forming a second flow path.
  • the flow paths have variable conductivities.
  • An upper flow path is formed by the inner surface of the shield and the outer surface of the process chamber cover.
  • a lower flow path is formed by a shading ring and the lower part of the
  • the shield occupies an upper position relative to the pedestal.
  • the shield occupies a middle position.
  • the shield and the Shading ring holder in a lower position, wherein the Abschattungsring rests on a shelf.
  • a shut-off valve for a vacuum device for separating a process chamber and an electron beam gun of the vacuum device is known. Further, an opening valve body provided on side walls opposite to each other and a valve body for opening / closing the openings are provided.
  • a cylindrical and movable shield is insertable into the valve housing via an opening on the side of the process chamber when the valve is open. In between, the shield is freely movable back and forth. The interior of the movable shield and the interior of the valve housing are atmospherically separable from each other.
  • Cover ring and an insulator device wherein the upper adapter assembly, the at least one shielding unit, the cover ring and the insulator are simultaneously removable as a unit.
  • the object of the present invention is to provide a device for the vacuum treatment of substrates, in which the vacuum chamber can be screened against a treatment process taking place in the process chamber in order to avoid parasitic problems
  • Process chamber has good accessibility and the pump power for the inner region of the process chamber is adjustable.
  • the upper section and the lower section are movable relative to each other between the side wall of the upper section and the side wall of the lower section a lower flow path between the inner region of Process chamber and arranged outside of the upper portion
  • an upper flow path is provided between the inner portion of the process chamber and the inner portion of the vacuum chamber located outside the upper portion
  • the upper portion is movable relative to the vacuum chamber to a lower position in which the upper flow path is opened
  • the upper section is movable relative to the vacuum chamber to an upper position in which the upper flow path is closed.
  • the upper portion of the process chamber can shield the interior of the vacuum chamber from parasitic coating during the vacuum chamber without the
  • the lower flow path is realized in a structurally particularly simple manner. Characterized in that between an upper edge portion of the upper portion and a disposed in an upper part of the inner region of the vacuum chamber sealing element, an upper flow area between the inner region of the process chamber and the au ßerrenz the upper portion disposed arranged inner region of the vacuum chamber, the upper flow path is also on realized particularly constructively simple way. It is also advantageous that the upper flow path is opened if the upper portion is moved relative to the vacuum chamber in a lower position. Furthermore, it is advantageous that the upper flow path is closed if the upper section is moved relative to the vacuum chamber in an upper position. It is advantageous if the upper portion is relative to the vacuum chamber in the upper position, the
  • Process chamber can be done with process gases.
  • the substrates may in particular be spectacle lenses or the like, which are introduced as a batch into the vacuum chamber, vacuum-treated and discharged again.
  • the lower portion may be formed in an advantageous embodiment as an insert component, which is inserted or inserted into a recess in the bottom region of the vacuum chamber.
  • Part section is formed by a recess in the bottom of the vacuum chamber. This material can be saved, however, the coating of this range of the
  • Vacuum chamber to be accepted.
  • the side wall of the upper portion is formed as an upper cylinder ring, whereby the upper
  • Flow path and the lower flow path can be realized in a structurally very simple manner.
  • the upper cylinder ring may have an outer diameter that is slightly smaller than the inner diameter of the lower section, thereby providing an overlap of the sidewall of the upper and sidewalls of the lower section, such that a gap exists between parts of the sidewall of the upper section and Parts of the side wall of the lower section is created.
  • the lower flow path extends through the gap formed between the side walls of the upper section and the lower section. A conductance of the lower flow path can be determined by the gap space.
  • an overlap may still be provided. The upper flow path is then closed while the lower flow path is open.
  • the side wall of the lower portion may be formed as a lower cylinder ring.
  • the upper cylinder ring has an inner diameter which is slightly larger than an outer diameter of the lower cylinder ring.
  • the receiving device is formed in the process chamber relatively movable to the vacuum chamber. This allows, without the conductivities of the
  • the distance of the substrates to the plasma device changed be, with which separately from the conductance parameters of the vacuum treatment of the substrates, such as ion energies of the plasma on the substrate surface, can be influenced.
  • Substrates can be loaded.
  • the upper section is brought into a lower position.
  • Receiving device has a bottom plate, which forms an intermediate floor area in the process chamber, so that the chamber size is variable.
  • existing elements of a lifting device with which the receiving device is movable are thus protected from parasitic Be Bertung.
  • the side wall of the upper section and / or the side wall of the lower section are at least partially made of a conductive material and can function as an anode or partial anode.
  • the upper section is electrically insulated from the vacuum chamber, whereby a further degree of freedom for adjusting the potential conditions within the process chamber is obtained.
  • the lower section is electrically insulated from the vacuum chamber, whereby a further degree of freedom for adjusting the potential conditions within the process chamber is obtained.
  • the upper portion is electrically connected to the vacuum chamber, whereby a further degree of freedom for
  • the lower portion is electrically connected to the vacuum chamber, whereby a further degree of freedom for
  • Bottom plate of the receiving device consists of an electrically conductive material and electrically opposite the vacuum chamber, the upper portion or the lower
  • the bottom plate is made of an electrically conductive material and electrically connected to the vacuum chamber, the upper portion or the lower portion.
  • the lower section has a bottom part which is connected to the side wall of the lower section.
  • the lower portion can be used as a whole in a recess in the bottom of the vacuum chamber and also removed again.
  • Lock device comprises a Einschleus- and discharge chamber, the one
  • Provision area for providing substrates wherein a transport path for transporting substrates from the staging area to the receiving device and from the receiving device leads to the staging area. Transport is thus barrier-free with the lock open.
  • Pivoting plate is provided, which is pivotable about a pivot axis between the provision area and receiving device, which structurally simple good space utilization can be achieved.
  • the pivot plate has a support structure with support means for substrates, so that the substrates are guided safely during transport.
  • Area of the receiving structure has at least one recess which the
  • the pivot plate is pivotable in the region of the substrate receiving elements without a movement impediment.
  • the at least one recess allows the substrates directly in the region of
  • Substrate receiving elements for taking over the substrates and the transfer of the substrates are designed adjustable in height. The substrates are then safely taken up by the substrate receiving elements during the plasma treatment.
  • Receiving device is designed as a coating rotor with a main axis of rotation, whereby a uniformity of a coating is increased.
  • the plasma source is designed as a sputtering cathode, electron beam evaporator or plasma polymerization source.
  • Figure 1 is a schematic representation of a device according to the invention with a
  • Figure 2 is a simplified schematic representation of the device in Figure 1 without the lower portion of the process chamber;
  • Figure 3 is a schematic representation of a device according to the invention.
  • Figure 4 is a schematic representation of a device according to Figure 3 in a horizontal
  • FIGS 1 and 2 show a device according to the invention with a vacuum chamber 1 with a substrate lock device 1 16 and a plasma device which is arranged on a corresponding opening having an upper cover 108 of the vacuum chamber 1.
  • the plasma device embodied as cathode device 160 in this embodiment comprises, in particular, a sputtering target 165. It is understood that a different one also be used.
  • the substrate lock device 16 comprises, in particular, a lock opening 15, which is arranged in the chamber wall 101 of the vacuum chamber 1. Furthermore, a pump opening 102 is arranged in the chamber wall 101. It is understood that in the chamber wall 101, other openings may be provided, if appropriate for evacuating, venting or operating the vacuum chamber 1.
  • a process chamber 110 is arranged, which comprises an upper section 105a with a side wall 106a and a lower section 105b with a side wall 106b.
  • An upper side of the process chamber 1 10 includes the
  • the side walls 106a, 106b are at least partially made of a conductive material, such as stainless steel.
  • the side walls 106a and 106b are cylindrical.
  • the lower portion 105b is fixedly disposed in a recess 152 in the bottom portion 120 of the vacuum chamber 1 and has a bottom portion 195 which is connected to the side wall 106b.
  • the process chamber 110 has an inner area 140 in which a vacuum treatment of substrates 130 held in a substrate holder 150 can take place.
  • Vacuum treatment is preferably a coating of surfaces of the substrates 130 by means of a sputtering plasma. It is understood that others too
  • Vacuum treatments in particular pretreatments or cleaning processes in the process chamber 1 10 can be carried out.
  • a receiving device 135 for substrates 130 is arranged in the inner region 140 of the process chamber.
  • Cathode means 160 for example, a coating of the substrates 130 take place.
  • the receiving device 135 comprises a bottom plate 136 whose edges have a small distance from the side wall 106b and an intermediate bottom region in the
  • a process space is formed by means of the side walls 106a and 106b and the bottom plate 136 in the interior of the process chamber.
  • the receiving device 135 is connected via a vacuum feedthrough with a lifting device 185, by which a vertical movement of the receiving device 135 within the process chamber 1 10 can be realized.
  • the upper section 105a has an upper edge 107 which can be pressed against a sealing element 109 in the upper part of the vacuum chamber when the upper section 105a is in an upper position relative to the vacuum chamber 1.
  • the sealing element 109 may, for example, a mounted in an opening of the upper cover 108 sealing ring be, whose shape is adapted to the upper edge 107.
  • An upper flow path 190 extending between the upper edge region 107 and the sealing element 109 is then closed when the upper edge region 107 is pressed against the sealing element 109.
  • the upper portion 105a can be moved relative to the vacuum chamber 1 in lower positions, in which the upper flow path 190 is opened. As shown in FIG. 2, the edge region 107 can then be positioned so that good accessibility of the inner region 140, for example for loading with substrates, is present via the lock opening 15.
  • the upper portion 105a is connected via a vacuum feedthrough with a lifting device 125, which with a mounting member 126, for example, at the bottom of
  • Vacuum chamber 1 is fixed in the bottom area.
  • the upper portion can be moved vertically.
  • a lower position of the upper portion 105 a is a particularly simple pumping or venting of the process chamber 1 10 over the
  • the upper portion 105a and / or the lower portion 105b may be electrically insulated from the vacuum chamber 1. Further, the upper portion 105a and / or the lower portion 105b may be electrically connected to the vacuum chamber. The upper portion 105a and / or the lower portion 105b may be further set to a predetermined or floating electrical potential with respect to the vacuum chamber 1. In particular, the upper side wall 106a and / or the lower side wall 106b may be electrically insulated from the vacuum chamber 1. Further, the upper side wall 106a and / or the lower side wall 106b may be electrically connected to the vacuum chamber 1.
  • the receptacle 135 or the bottom plate 136 may be electrically insulated from the vacuum chamber 1, the upper portion 105a, and / or the lower portion 105b. Further, the receptacle 135 or the bottom plate 136 may be electrically connected to the vacuum chamber 1, the upper portion 105a, and / or the lower portion 105b. The receptacle 135 or the bottom plate 136 may be further set to a predetermined or floating electrical potential with respect to the vacuum chamber 1.
  • the upper section 105a is brought into an upper position, so that the inner region 1a of the vacuum chamber 1 is not subject to any parasitic coating.
  • Figures 3 and 4 show a schematic representation of an embodiment of a device according to the invention with a lock device 1 16, the Einschleus- and Exhaust chamber 205 includes.
  • a staging area 205a for providing substrates 130 is arranged in the inflow and outflow chamber 205.
  • Transport path 206 leads from the provision area 205a to the receiving device 135 or from the receiving device 135 to the
  • Provision area 205a The transport path 206 leads through the opening of the
  • FIG. 4 shows a cover panel 295 which is movable about a pivot axis 295a.
  • the cover is conformed to a recess 108a in the
  • Cover 108 adapted and makes it possible to shield the interior 1 a of the vacuum chamber with respect to the plasma device 160.
  • a conditioning for example, a sputter cathode with the opening 108a closed.
  • transport means along the transport path 206 are a transport means
  • Swivel plate 250 is shown, which is pivotable about a pivot axis 251.
  • Swing plate 250 is in the inward and outward transfer chamber 205 relative to
  • Lock device 1 16 arranged so that the lock device 1 16 unobstructed by the pivot plate 250 can be opened or closed when the pivot plate 250 is brought into a ready position.
  • the pivot plate 250 has a support structure with support means 235 for substrates 130, by means of which the substrates 130 can be releasably fixed on the support structure.
  • the swivel plate 250 has at least one recess 252 in the region of the receiving structure; in the illustration of Figure 4, three such recesses are provided by a comb-like shape of the pivot plate is realized.
  • the opening of the recess 252 extends in the pivoting direction of the pivot plate 250 in a pivoting movement towards the receiving device 135th
  • the receiving device 135 has substrate receiving elements 265, which are formed like a mushroom relative to the bottom plate 136 of the receiving device 135.
  • the recesses 252 allow the pivoting plate 250 to pivot in the region of the substrate receiving elements, wherein shafts 265 a of the substrate receiving elements 265 are arranged in the recesses 252.
  • Finger elements 252a corresponding to the recesses 252 then lie next to the shanks 265a when the pivot plate is pivoted into the region of the substrate receiving elements 265a for loading or unloading the receiving device 135.
  • a lock door of the lock device 1 16 is opened by means of a lifting device 280 coupled to the lock via a rotary feedthrough 275.
  • the pivot plate 250 is removed from the
  • Provision area 205a by means of a pivoting movement about the pivot axis 251 moves into the interior 1 a of the vacuum chamber 1, where the finger elements 252a with the substrates 130 in the region of the substrate receiving elements 265 are located.
  • the substrate receiving elements 265 are relatively low-lying at this time, so that the substrates lie with their underside on them. Subsequently, the substrate receiving elements 265 are moved upward until they receive the substrates 130 from below. The substrates 130 are thereby of the
  • the substrate receiving elements 265 may be moved downwards after the pivot plate 250 has been removed from the area of the receiving device 135, in particular so far that openings in which the shafts 265a are movable in the bottom plate 136 are closed by the substrate receiving elements 265.
  • the receiving device 135 may be formed as a coating rotor with a main rotor axis 260.
  • the substrate receiving elements 265 may be associated with a planetary gear 270 and during rotation about the
  • Main axis of rotation 260 in turn move in a rotational movement about local axes of rotation.
  • the device in particular the plasma device 160 and the movable
  • Components including unillustrated components, such as pumps and sensors, are controlled and / or regulated by a controller. Furthermore, it is understood that for adjusting the electrical potentials at the upper and / or lower
  • Subsections 105a, 105b and the receiving device 135 or its components corresponding voltage sources are provided.

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Robotics (AREA)
  • Physical Vapour Deposition (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)

Abstract

L'invention concerne un dispositif de traitement sous vide de substrats (130), comprenant une chambre à vide (1) équipé d'un système à plasma (160), une chambre de traitement (110) et un système (135) de support des substrats (130) disposé dans la chambre de traitement (110) en dessous du système à plasma. La chambre de traitement (110) comprend une partie supérieure (105a) qui possède une paroi latérale (106a) et une partie inférieure (105b) qui possède une paroi latérale (106b). La partie supérieure (105a) et la partie inférieure (105b) sont mobiles l'une par rapport à l'autre dans le sens vertical. Un chemin d'écoulement inférieur (105c) allant de la zone intérieure (140) de la chambre de traitement (110) à la zone intérieure (1a) de la chambre à vide (1) située à l'extérieur de la partie supérieure (105a) s'étend entre la paroi latérale (106a) de la partie supérieure (105a) et la paroi latérale (106b) de la partie inférieure (105b). En outre, un chemin d'écoulement supérieur (190) allant de la zone intérieure (140) de la chambre de traitement (110) à la zone intérieure (1a) de la chambre à vide (1) située à l'extérieur de la partie supérieure (105a) s'étend entre une zone de bord supérieur (107) de la partie supérieure (105a) et un élément d'étanchéité (109) disposé dans une partie supérieure de la zone intérieure (1a) de la chambre à vide (1). La partie supérieure (105a) peut être déplacée par rapport à la chambre à vide (1) dans une position inférieure dans laquelle le chemin d'écoulement supérieur (190) est ouvert et la partie supérieure (105a) peut être déplacée par rapport à la chambre à vide (1) dans une position supérieure dans laquelle le chemin d'écoulement supérieur (190) est fermé.
EP14720497.8A 2013-04-05 2014-03-26 Dispositif de traitement sous vide de substrats Withdrawn EP2981634A1 (fr)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE102013005765 2013-04-05
DE102013005868.6A DE102013005868A1 (de) 2013-04-05 2013-04-08 Vorrichtung zur Vakuumbehandlung von Substraten
PCT/EP2014/056090 WO2014161759A1 (fr) 2013-04-05 2014-03-26 Dispositif de traitement sous vide de substrats

Publications (1)

Publication Number Publication Date
EP2981634A1 true EP2981634A1 (fr) 2016-02-10

Family

ID=51567322

Family Applications (1)

Application Number Title Priority Date Filing Date
EP14720497.8A Withdrawn EP2981634A1 (fr) 2013-04-05 2014-03-26 Dispositif de traitement sous vide de substrats

Country Status (7)

Country Link
US (1) US20160111313A1 (fr)
EP (1) EP2981634A1 (fr)
JP (1) JP2016515766A (fr)
KR (1) KR20150140351A (fr)
CN (1) CN105264111A (fr)
DE (1) DE102013005868A1 (fr)
WO (1) WO2014161759A1 (fr)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111279107A (zh) * 2017-11-23 2020-06-12 应用材料公司 用于真空密封的锁定阀、真空腔室和真空处理系统
JP7141989B2 (ja) * 2018-09-28 2022-09-26 芝浦メカトロニクス株式会社 成膜装置
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WO2014161759A1 (fr) 2014-10-09
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DE102013005868A1 (de) 2014-10-09
JP2016515766A (ja) 2016-05-30

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