EP2943990A1 - Thermodynamically stable binary oxide doped with lower valence element, its synthesis and application in electrochemical devices - Google Patents
Thermodynamically stable binary oxide doped with lower valence element, its synthesis and application in electrochemical devicesInfo
- Publication number
- EP2943990A1 EP2943990A1 EP13815703.7A EP13815703A EP2943990A1 EP 2943990 A1 EP2943990 A1 EP 2943990A1 EP 13815703 A EP13815703 A EP 13815703A EP 2943990 A1 EP2943990 A1 EP 2943990A1
- Authority
- EP
- European Patent Office
- Prior art keywords
- support material
- metal
- material according
- doped
- lower valence
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 230000015572 biosynthetic process Effects 0.000 title claims description 12
- 238000003786 synthesis reaction Methods 0.000 title claims description 8
- 239000000463 material Substances 0.000 claims abstract description 36
- 239000000446 fuel Substances 0.000 claims abstract description 26
- 238000007254 oxidation reaction Methods 0.000 claims abstract description 26
- 230000003647 oxidation Effects 0.000 claims abstract description 24
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 23
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 23
- 239000001301 oxygen Substances 0.000 claims abstract description 23
- 239000002184 metal Substances 0.000 claims abstract description 19
- 229910044991 metal oxide Inorganic materials 0.000 claims abstract description 19
- 229910000314 transition metal oxide Inorganic materials 0.000 claims abstract description 13
- 229910052751 metal Inorganic materials 0.000 claims abstract description 10
- 150000003624 transition metals Chemical class 0.000 claims abstract description 7
- 229910052723 transition metal Inorganic materials 0.000 claims abstract description 5
- 239000000203 mixture Substances 0.000 claims abstract description 4
- XOLBLPGZBRYERU-UHFFFAOYSA-N SnO2 Inorganic materials O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 claims description 20
- 239000000843 powder Substances 0.000 claims description 13
- 150000004706 metal oxides Chemical class 0.000 claims description 12
- 238000000034 method Methods 0.000 claims description 8
- 238000001354 calcination Methods 0.000 claims description 7
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N titanium dioxide Inorganic materials O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 6
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 4
- LTPBRCUWZOMYOC-UHFFFAOYSA-N Beryllium oxide Chemical compound O=[Be] LTPBRCUWZOMYOC-UHFFFAOYSA-N 0.000 claims description 3
- ODINCKMPIJJUCX-UHFFFAOYSA-N Calcium oxide Chemical compound [Ca]=O ODINCKMPIJJUCX-UHFFFAOYSA-N 0.000 claims description 3
- CPLXHLVBOLITMK-UHFFFAOYSA-N Magnesium oxide Chemical compound [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 claims description 3
- 239000005518 polymer electrolyte Substances 0.000 claims description 3
- CXKCTMHTOKXKQT-UHFFFAOYSA-N cadmium oxide Inorganic materials [Cd]=O CXKCTMHTOKXKQT-UHFFFAOYSA-N 0.000 claims description 2
- 150000001875 compounds Chemical class 0.000 claims description 2
- VQCBHWLJZDBHOS-UHFFFAOYSA-N erbium(III) oxide Inorganic materials O=[Er]O[Er]=O VQCBHWLJZDBHOS-UHFFFAOYSA-N 0.000 claims description 2
- QZQVBEXLDFYHSR-UHFFFAOYSA-N gallium(III) oxide Inorganic materials O=[Ga]O[Ga]=O QZQVBEXLDFYHSR-UHFFFAOYSA-N 0.000 claims description 2
- 238000002156 mixing Methods 0.000 claims description 2
- PLDDOISOJJCEMH-UHFFFAOYSA-N neodymium oxide Inorganic materials [O-2].[O-2].[O-2].[Nd+3].[Nd+3] PLDDOISOJJCEMH-UHFFFAOYSA-N 0.000 claims description 2
- 238000003980 solgel method Methods 0.000 claims description 2
- 238000007704 wet chemistry method Methods 0.000 claims description 2
- FIXNOXLJNSSSLJ-UHFFFAOYSA-N ytterbium(III) oxide Inorganic materials O=[Yb]O[Yb]=O FIXNOXLJNSSSLJ-UHFFFAOYSA-N 0.000 claims description 2
- QVQLCTNNEUAWMS-UHFFFAOYSA-N barium oxide Inorganic materials [Ba]=O QVQLCTNNEUAWMS-UHFFFAOYSA-N 0.000 claims 1
- IATRAKWUXMZMIY-UHFFFAOYSA-N strontium oxide Inorganic materials [O-2].[Sr+2] IATRAKWUXMZMIY-UHFFFAOYSA-N 0.000 claims 1
- 238000004090 dissolution Methods 0.000 abstract description 6
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 23
- 229910052799 carbon Inorganic materials 0.000 description 19
- 239000003054 catalyst Substances 0.000 description 15
- KRKNYBCHXYNGOX-UHFFFAOYSA-N citric acid Chemical compound OC(=O)CC(O)(C(O)=O)CC(O)=O KRKNYBCHXYNGOX-UHFFFAOYSA-N 0.000 description 15
- 238000000137 annealing Methods 0.000 description 11
- 230000007797 corrosion Effects 0.000 description 11
- 238000005260 corrosion Methods 0.000 description 11
- 239000004065 semiconductor Substances 0.000 description 11
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 9
- 238000005259 measurement Methods 0.000 description 9
- 229910021397 glassy carbon Inorganic materials 0.000 description 8
- 239000000243 solution Substances 0.000 description 8
- 229920006395 saturated elastomer Polymers 0.000 description 7
- 239000010409 thin film Substances 0.000 description 7
- PXRKCOCTEMYUEG-UHFFFAOYSA-N 5-aminoisoindole-1,3-dione Chemical compound NC1=CC=C2C(=O)NC(=O)C2=C1 PXRKCOCTEMYUEG-UHFFFAOYSA-N 0.000 description 6
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 6
- 229910052739 hydrogen Inorganic materials 0.000 description 6
- 239000001257 hydrogen Substances 0.000 description 6
- 238000013112 stability test Methods 0.000 description 6
- CQMNNMLVXSWLCH-UHFFFAOYSA-B 2-hydroxypropane-1,2,3-tricarboxylate;tin(4+) Chemical compound [Sn+4].[Sn+4].[Sn+4].[O-]C(=O)CC(O)(CC([O-])=O)C([O-])=O.[O-]C(=O)CC(O)(CC([O-])=O)C([O-])=O.[O-]C(=O)CC(O)(CC([O-])=O)C([O-])=O.[O-]C(=O)CC(O)(CC([O-])=O)C([O-])=O CQMNNMLVXSWLCH-UHFFFAOYSA-B 0.000 description 5
- 230000002378 acidificating effect Effects 0.000 description 5
- 238000002484 cyclic voltammetry Methods 0.000 description 5
- 239000000725 suspension Substances 0.000 description 5
- AZQWKYJCGOJGHM-UHFFFAOYSA-N 1,4-benzoquinone Chemical compound O=C1C=CC(=O)C=C1 AZQWKYJCGOJGHM-UHFFFAOYSA-N 0.000 description 4
- QIGBRXMKCJKVMJ-UHFFFAOYSA-N Hydroquinone Chemical compound OC1=CC=C(O)C=C1 QIGBRXMKCJKVMJ-UHFFFAOYSA-N 0.000 description 4
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 4
- 239000006230 acetylene black Substances 0.000 description 4
- 238000004458 analytical method Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 150000001247 metal acetylides Chemical class 0.000 description 4
- 239000002243 precursor Substances 0.000 description 4
- 238000002441 X-ray diffraction Methods 0.000 description 3
- 238000004833 X-ray photoelectron spectroscopy Methods 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 3
- 239000007772 electrode material Substances 0.000 description 3
- 239000010931 gold Substances 0.000 description 3
- 229910052742 iron Inorganic materials 0.000 description 3
- 239000010410 layer Substances 0.000 description 3
- 229910000510 noble metal Inorganic materials 0.000 description 3
- 239000011148 porous material Substances 0.000 description 3
- 238000006722 reduction reaction Methods 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- 229910001887 tin oxide Inorganic materials 0.000 description 3
- 229920000557 Nafion® Polymers 0.000 description 2
- 235000008331 Pinus X rigitaeda Nutrition 0.000 description 2
- 235000011613 Pinus brutia Nutrition 0.000 description 2
- 241000018646 Pinus brutia Species 0.000 description 2
- 239000007864 aqueous solution Substances 0.000 description 2
- ANERHPOLUMFRDC-UHFFFAOYSA-K bismuth citrate Chemical compound [Bi+3].[O-]C(=O)CC(O)(CC([O-])=O)C([O-])=O ANERHPOLUMFRDC-UHFFFAOYSA-K 0.000 description 2
- 239000006229 carbon black Substances 0.000 description 2
- 235000019241 carbon black Nutrition 0.000 description 2
- 150000001768 cations Chemical class 0.000 description 2
- 239000002800 charge carrier Substances 0.000 description 2
- 230000001351 cycling effect Effects 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 239000002019 doping agent Substances 0.000 description 2
- 239000003792 electrolyte Substances 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 238000011835 investigation Methods 0.000 description 2
- 229920000554 ionomer Polymers 0.000 description 2
- 239000010955 niobium Substances 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- 230000001590 oxidative effect Effects 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 241000894007 species Species 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 229910052715 tantalum Inorganic materials 0.000 description 2
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- UONOETXJSWQNOL-UHFFFAOYSA-N tungsten carbide Chemical compound [W+]#[C-] UONOETXJSWQNOL-UHFFFAOYSA-N 0.000 description 2
- NLXLAEXVIDQMFP-UHFFFAOYSA-N Ammonium chloride Substances [NH4+].[Cl-] NLXLAEXVIDQMFP-UHFFFAOYSA-N 0.000 description 1
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 description 1
- KRKNYBCHXYNGOX-UHFFFAOYSA-K Citrate Chemical compound [O-]C(=O)CC(O)(CC([O-])=O)C([O-])=O KRKNYBCHXYNGOX-UHFFFAOYSA-K 0.000 description 1
- 229910052688 Gadolinium Inorganic materials 0.000 description 1
- 229910002651 NO3 Inorganic materials 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- 229910019142 PO4 Inorganic materials 0.000 description 1
- 229910001260 Pt alloy Inorganic materials 0.000 description 1
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 1
- 229910052772 Samarium Inorganic materials 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 229910021626 Tin(II) chloride Inorganic materials 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 238000000627 alternating current impedance spectroscopy Methods 0.000 description 1
- 235000011114 ammonium hydroxide Nutrition 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 229910052793 cadmium Inorganic materials 0.000 description 1
- 238000004364 calculation method Methods 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 230000003197 catalytic effect Effects 0.000 description 1
- 125000002091 cationic group Chemical group 0.000 description 1
- 230000009920 chelation Effects 0.000 description 1
- 239000003426 co-catalyst Substances 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 230000003111 delayed effect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000002848 electrochemical method Methods 0.000 description 1
- 238000006056 electrooxidation reaction Methods 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 238000005087 graphitization Methods 0.000 description 1
- 229910021480 group 4 element Inorganic materials 0.000 description 1
- 229910021478 group 5 element Inorganic materials 0.000 description 1
- RXPAJWPEYBDXOG-UHFFFAOYSA-N hydron;methyl 4-methoxypyridine-2-carboxylate;chloride Chemical compound Cl.COC(=O)C1=CC(OC)=CC=N1 RXPAJWPEYBDXOG-UHFFFAOYSA-N 0.000 description 1
- 238000011068 loading method Methods 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 1
- 150000002823 nitrates Chemical class 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- VVRQVWSVLMGPRN-UHFFFAOYSA-N oxotungsten Chemical class [W]=O VVRQVWSVLMGPRN-UHFFFAOYSA-N 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- NBIIXXVUZAFLBC-UHFFFAOYSA-K phosphate Chemical compound [O-]P([O-])([O-])=O NBIIXXVUZAFLBC-UHFFFAOYSA-K 0.000 description 1
- 239000010452 phosphate Substances 0.000 description 1
- 238000004375 physisorption Methods 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 238000006116 polymerization reaction Methods 0.000 description 1
- 238000001556 precipitation Methods 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 238000005211 surface analysis Methods 0.000 description 1
- 238000003887 surface segregation Methods 0.000 description 1
- 238000010301 surface-oxidation reaction Methods 0.000 description 1
- 238000001308 synthesis method Methods 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 238000002411 thermogravimetry Methods 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- AXZWODMDQAVCJE-UHFFFAOYSA-L tin(II) chloride (anhydrous) Chemical compound [Cl-].[Cl-].[Sn+2] AXZWODMDQAVCJE-UHFFFAOYSA-L 0.000 description 1
- QHGNHLZPVBIIPX-UHFFFAOYSA-N tin(ii) oxide Chemical class [Sn]=O QHGNHLZPVBIIPX-UHFFFAOYSA-N 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 229910001930 tungsten oxide Inorganic materials 0.000 description 1
- 238000004758 underpotential deposition Methods 0.000 description 1
- 229910052720 vanadium Inorganic materials 0.000 description 1
- GPPXJZIENCGNKB-UHFFFAOYSA-N vanadium Chemical compound [V]#[V] GPPXJZIENCGNKB-UHFFFAOYSA-N 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 230000004580 weight loss Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
- H01M4/00—Electrodes
- H01M4/86—Inert electrodes with catalytic activity, e.g. for fuel cells
- H01M4/88—Processes of manufacture
- H01M4/8803—Supports for the deposition of the catalytic active composition
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
- H01M12/00—Hybrid cells; Manufacture thereof
- H01M12/04—Hybrid cells; Manufacture thereof composed of a half-cell of the fuel-cell type and of a half-cell of the primary-cell type
- H01M12/06—Hybrid cells; Manufacture thereof composed of a half-cell of the fuel-cell type and of a half-cell of the primary-cell type with one metallic and one gaseous electrode
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
- H01M12/00—Hybrid cells; Manufacture thereof
- H01M12/08—Hybrid cells; Manufacture thereof composed of a half-cell of a fuel-cell type and a half-cell of the secondary-cell type
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
- H01M8/00—Fuel cells; Manufacture thereof
- H01M8/10—Fuel cells with solid electrolytes
- H01M2008/1095—Fuel cells with polymeric electrolytes
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E60/00—Enabling technologies; Technologies with a potential or indirect contribution to GHG emissions mitigation
- Y02E60/10—Energy storage using batteries
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E60/00—Enabling technologies; Technologies with a potential or indirect contribution to GHG emissions mitigation
- Y02E60/30—Hydrogen technology
- Y02E60/50—Fuel cells
Definitions
- the invention relates to the use of novel, corrosion resistant oxide-based electrode materials for application in fuel cells, metal-air batteries, electrolyzer, and sensors.
- transition metal or metal oxides in their highest oxidation state can provide high electrochemical stability, as well as high surface area when produced by wet chemical synthesis methods.
- High surface area carbons are commonly used both for anode and cathode electrodes in fuel cells, electrolyzers , and metal-air batteries.
- PEFCs polymer electrolyte fuel cells
- carbon is used as support electrode material for Pt or Pt-alloy catalysts, within the gas-diffusion layer, and as a bipolar plate material.
- Pt or Pt-alloy catalysts within the gas-diffusion layer
- bipolar plate material As a bipolar plate material.
- carbon does not represent a stable support since it undergoes to electrochemical oxidation under operating fuel cell conditions.
- Surface oxidation of the carbon support leads to an increase of the carbon hydrophilicity, which causes large mass transport overpotentials in a fuel cell system, and thereby a significant decrease of the performance.
- An even more severe degradation is caused by carbon oxidation reaction (COR), described by Equ. 1, which leads to an extended carbon corrosion and loss of the surface area.
- COR carbon oxidation reaction
- tungsten carbide has been widely investigated as catalyst support due to its high electronic conductivities and thermal stability.
- WC does not provide adequate corrosion stability since some authors reported the formation of tungsten oxides only after 50 potential cycles between 0 and 1.0 V vs NHE (J. Phys. Chem. C 111, 2007,14617).
- this class of materials cannot provide the required specific surface area for a support material .
- a good catalyst support should provide both adequate stability as well as high surface in order to reduce the loading of noble metal catalysts. Therefore, the most successful approach in developing a high surface area and corrosion resistant support appears to be the use of transition metal or metal oxides. In fact, this class of materials can achieve high electrochemical stability when used in their highest oxidation state, as well as high surface area when produced by wet chemical synthesis methods.
- oxide catalyst support has been performed on reduced oxides of titanium, such as the Magneli phase (T1 4 O 7 ) or Ebonex, which show lower band-gaps and higher conductivity than the stoichiometric Ti0 2 .
- T1 4 O 7 or Ebonex the use of non-stoichiometric oxides, such as T1 4 O 7 or Ebonex, does not represent a better solution than the use of carbides or nitrides.
- Oxygen deficient- oxides can be definitively oxidized to their stoichiometric state at the typical fuel cell cathode conditions, resulting in a catalyst support with low electronic conductivity and also poor mechanical stability.
- oxide-based materials containing elements in their highest stable oxidation state cannot be subjected to further oxidation and, thus, they represent the most stable support materials for applications in fuel cell, electrolyzer, and metal- air battery oxygen electrodes.
- a support material for electrochemical applications such as fuel cells, metal-air batteries, electrolyzer electrodes and sensors, having a composition of a semiconducting metal or transition metal oxide being doped with a lower valence element according to a general formula that is formulated as:
- D represents the lower valence element with an oxidation state with Z ⁇ Y and ⁇ represents the oxygen vacancies in the lattice and at the surface of the support material.
- Doped metal or transition metal oxides represent best candidates as support materials because they provide both dissolution and electrochemical stability under the relevant conditions of oxygen electrode, as well as achieve high conductivity and high surface area .
- the metal or transition metal oxides are present in their highest stable oxidation state as corrosion stable support at high electrochemical stability further able to provide surface areas larger than 50 m ⁇ /g, adequate electrical conductivity and possibly also acting as a co-catalysts, leading, thereby, to an oxygen electrode material with excellent stability and activity.
- the stable metal or transition metal support materials are applied for:
- Oxygen evolution reaction at the fuel cell anode side; in this case electrochemical stability up to at least 1.8 V is required .
- the present invention provides porous oxide support for fuel cell operating in acidic conditions such as PEFC, while in another aspect the metal oxides are used as supports and/or catalysts in fuel cells operating in alkaline conditions.
- the metal oxides For use in PEFC, the metal oxides must provide also adequate dissolution stability in acidic environment. Considering that cationic contaminations can exchange the proton sites in the ionomer and the membrane (resulting mainly in proton transport limitations) the dissolution of the metal oxide support must be excluded .
- the conductivity exceeds the values of 0.02 S/cm measured under typical PEFC oxygen electrode conditions, since the ionomer proton conductivity in the catalyst layer can be assumed to be -0.02 S/cm at 50%RH. Therefore without becoming the limiting factor, the electronic conductivity of the oxide electrode should be at least >0.02 S/cm under typical PEFC oxygen electrode
- Doping involves the addition of a different element into the semiconductor, i.e. substituting a group IV element (e.g. Si) with a group V element (e.g., P) or a group III element (e.g., Al) .
- group IV element e.g. Si
- group V element e.g., P
- group III element e.g., Al
- n-type semiconductors electrons are referred to as n-type semiconductors, whereas those in which holes are the majority charge carriers are referred to as p-type semiconductors.
- M is a metal or transition metal in Y oxidation state and D represents the lower valence element (dopant) with an oxidation state Z ⁇ Y and ⁇ represents the oxygen vacancies in the lattice and at the surface of the support material.
- Doping a stoichiometric binary oxide with a lower valence element for example doping a MO 2 binary oxide with a D 3+ element, leads to a p-type semiconductor and introduces oxygen vacancies in the host lattice for charge balancing according to Equ.2 (expressed in Kroger-Vink notation) : v _ 0 2M M x + O ⁇ + D 2 O 3 ⁇ 2D M +V0 * + 2MO 2 Therefore, semiconductors achieved by doping with a lower valence element can definitively present oxygen vacancies ( ⁇ ) in their lattice and at the surface.
- metal-oxide supports used in this invention not only act as inert support, but they can also act as advanced catalysts in alkaline conditions due to the present oxygen vacancies created by the use of dopants in a lower valence state compared to the host metal oxide.
- binary metal or transition metal oxides such as Ce0 2 , Sn0 2 , Ti0 2 , Hf0 2 , Pb0 2 , Ge0 2 and Si0 2 can be doped with Sc 2 0 3 , Y 2 0 3 , La 2 0 3 , Bi 2 0 3 , Sm 2 0 3 , Gd 2 0 3 , Tb 2 0 3 , Ho 2 0 3 , Tm 2 0 3 , Lu 2 0 3 , A1 2 0 3 , Ga 2 0 3 , Nd 2 0 3 , Yb 2 0 3 , Er 2 0 3 , BeO, MgO, CaO, ZnO, SrO, BaO, or CdO.
- This invention also reports an optimized synthesis and calcination method to achieve high surface area semiconducting oxides.
- Using a modified sol-gel method it is possible to achieve single-phase formation and microstructure control of the desired powders at reduced temperatures. Indeed, the sol-gel procedure reduces the diffusion path up to a nanometric scale, and thus requires lower calcination temperatures .
- Figure 3 Pore size distribution obtained by BET measurements for 5 at% Bi-doped Sn0 2 calcined at 550 °C for 2 hours in O 2 ;
- Example 1 Chelation of cations is achieved by adding citric acid (CA) to the aqueous solution containing tin citrate and bismuth nitrate, respectively; ethylene glycol (EG) is added later in order to polymerize the organic precursor.
- CA citric acid
- EG ethylene glycol
- the aqueous tin citrate solution is prepared from SnCl 2 and CA with a CA:metal molar ratio of 3:1. Ammonia solution is added to the solution of tin citrate until a pH value of 4-5 is obtained in order to prevent tin citrate precipitation.
- Aqueous solution of Bi citrate is prepared mixing Bi (NO 3 ) 3*53 ⁇ 40 and CA with a CA:metal molar ratio of 3:1.
- aqueous Bi-citrate solution is added to the tin citrate solution in the appropriate amount to achieve a doping level of 5 at%.
- HNO 3 is added drop wise to the solution until a pH value of ⁇ 1 is achieved.
- EG is then added to the citrate solution at weight ratio of 40:60 with respect to CA.
- the solution is kept at 100 °C to evaporate the water and once a viscous gel is obtained, the gel is heated at about 150 °C for 24h to promote polymerization reaction.
- TG Thermogravimetric
- the annealing time of the powder precursor is an important
- the annealing is performed in O 2 atmosphere in order to achieve oxide powders with the cations in their highest stable oxidation state.
- X-ray diffraction (XRD) analysis is performed to investigate the crystalline phase of the calcined oxides.
- the XRD patterns of BiSn0 2 calcined at 550 °C for 2 and 10 h indicate that both the powders show a single, crystalline phase.
- the crystallite size of the BiSn0 2 powders obtained after annealing at 550 °C for 2 and 10 h are determined using the Scherrer equation.
- the BiSn0 2 powder annealed at 550 °C for 2 hours presents a crystallite size of 8.5 nm, while larger crystallites of 35 nm are obtained for the powder annealed at 550 °C for 10 hours. Therefore, the annealing time of 2 hours is beneficial to produce single phase powders with small crystallites.
- Example 2 Surface analysis by X-ray photoelectron spectroscopy (XPS) XPS is used to determine the chemical surface composition of the BiSn0 2 powders obtained after annealing at 550 °C for 2 and 10 h. The results are shown in Table 1.
- XPS X-ray photoelectron spectroscopy
- the 10 h annealing process leads to surface segregation of Bi at the surface, while a concentration of Bi closer to the theoretical one (5 at%) is obtained annealing the sample in O 2 at 550 °C for 2h, which therefore represent the optimized calcination condition. Furthermore, the analysis of the binding energy of the Bi 4f7/2 line confirms that Bi is incorporated with a 3+ oxidation state.
- Example 3 Determination of the Brunauer-Emmett-Teller (BET) surface area
- the specific surface of the semiconducting oxide supports is determined measuring the 2 physisorption isotherms at 77 K, using Quantachrome Autosorb-1 machine. 10-20 mg of oxide are transferred into the measuring chamber and degassed overnight at 200 °C. The specific surface area and the pore size distribution are
- the electrochemical stability under the most relevant PEFC cathode conditions is determined by cyclic voltammetry (CV) measurements. Electrochemical measurements are conducted in a three-electrode glass cell and using a rotator (Pine) to which the thin-film working electrode is attached.
- the thin-film electrodes were prepared from a suspension made of 75 mg of oxide, 100 ⁇ of Nafion 117 and 25 ml of isopropanol. 30 ]i of the above described suspension are spin coated on a glassy carbon rod of 5 mm in diameter and dried overnight under 2 flowing. The electrode is immersed in 0.1M HCIO 4 electrolyte saturated with pure Ar at room temperature and the measurements are performed using a hydrogen reference electrode (RHE) and a gold counter electrode in a three reference configuration.
- RHE hydrogen reference electrode
- Stability tests are performed over 1000 cycles between 50 mV and 1.6 V vs RHE using a scan rate of 50 mVs -1 .
- the same test is also performed on commonly used carbon for PEFC electrode (commercial Vulcan XC72) .
- Figure 4 shows the CV curves obtained for the BiSn0 2 and Vulcan XC72 electrodes. For the BiSn0 2 no new peaks evolved during
- Example 5 Determination of the oxygen reduction reaction (ORR) activity in acidic media The ORR is determined by rotating disk measurements (RDE)
- RDE measurements are conducted in a three-electrode glass cell and using a rotator (Pine) to which the RDE thin-film working electrode is attached.
- the thin-film electrodes are prepared from a suspension made of 75 mg of oxide, 15 mg of acetylene black (Alfa Aesar) , 100 ⁇ of Nafion 117, and 25 ml of isopropanol. 20 ⁇ of the above described suspension are spin coated on a glassy carbon rod of 5 mm in diameter and were dried overnight under 2 flowing.
- the electrode is immersed in 0.1M HCIO 4 at room temperature and the measurements are performed using a hydrogen reference electrode (RHE) and a Au counter electrode in a three reference configuration.
- RHE hydrogen reference electrode
- ORR activities are obtained from the negative-going scans at 5 mVs "1 in 0 2 -saturated 0.1 M HCIO 4 at 1600 rpm and corrected for capacitive currents obtained by negative-going scan in Ar-saturated 0.1 M HCIO 4 .
- ORR current in the same condition has been also measured for the bare glassy carbon (GC) substrate and undoped tin oxide showing similar surface area than BiSn0 2 ; the results are shown in Figure 5.
- BiSn0 2 shows higher ORR current than both the bare glassy carbon (which can be considered as background current) and the undoped
- the electrochemical stability of oxide semiconductor/Pt electrodes is tested by simulating automotive start and stop cycles of an operating fuel cell.
- the working electrode is prepared first spin coating on a glassy carbon substrate the oxide suspension
- Example 4 a and then depositing 50 ⁇ g/cm 2 of Pt by sputtering on top of the porous oxide film. The sputtering
- the working electrode is cycled between 0.5 and 1.5 V vs RHE for 1000 times at 50 mVs "1 in Ar-saturated 0.1 M HCIO 4 at room temperature.
- electrochemical surface area is observed after the start/stop stability test for the BiSn0 2 /Pt catalyst, while a significantly larger decrease in surface area occurred for the AB/Pt catalyst.
- Suitable material pairs can be:
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| PCT/EP2013/076268 WO2014108269A1 (en) | 2013-01-09 | 2013-12-11 | Thermodynamically stable binary oxide doped with lower valence element, its synthesis and application in electrochemical devices |
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