EP2813821B1 - Échelle pour encodeur photoélectrique - Google Patents

Échelle pour encodeur photoélectrique Download PDF

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Publication number
EP2813821B1
EP2813821B1 EP14001908.4A EP14001908A EP2813821B1 EP 2813821 B1 EP2813821 B1 EP 2813821B1 EP 14001908 A EP14001908 A EP 14001908A EP 2813821 B1 EP2813821 B1 EP 2813821B1
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EP
European Patent Office
Prior art keywords
scale
reflection
substrate
film
photoelectric encoder
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EP14001908.4A
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German (de)
English (en)
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EP2813821A1 (fr
Inventor
Fujio Maeda
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Mitutoyo Corp
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Mitutoyo Corp
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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01D—MEASURING NOT SPECIALLY ADAPTED FOR A SPECIFIC VARIABLE; ARRANGEMENTS FOR MEASURING TWO OR MORE VARIABLES NOT COVERED IN A SINGLE OTHER SUBCLASS; TARIFF METERING APPARATUS; MEASURING OR TESTING NOT OTHERWISE PROVIDED FOR
    • G01D5/00—Mechanical means for transferring the output of a sensing member; Means for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for converting; Transducers not specially adapted for a specific variable
    • G01D5/26—Mechanical means for transferring the output of a sensing member; Means for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for converting; Transducers not specially adapted for a specific variable characterised by optical transfer means, i.e. using infrared, visible, or ultraviolet light
    • G01D5/32—Mechanical means for transferring the output of a sensing member; Means for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for converting; Transducers not specially adapted for a specific variable characterised by optical transfer means, i.e. using infrared, visible, or ultraviolet light with attenuation or whole or partial obturation of beams of light
    • G01D5/34—Mechanical means for transferring the output of a sensing member; Means for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for converting; Transducers not specially adapted for a specific variable characterised by optical transfer means, i.e. using infrared, visible, or ultraviolet light with attenuation or whole or partial obturation of beams of light the beams of light being detected by photocells
    • G01D5/347—Mechanical means for transferring the output of a sensing member; Means for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for converting; Transducers not specially adapted for a specific variable characterised by optical transfer means, i.e. using infrared, visible, or ultraviolet light with attenuation or whole or partial obturation of beams of light the beams of light being detected by photocells using displacement encoding scales
    • G01D5/34707—Scales; Discs, e.g. fixation, fabrication, compensation
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01D—MEASURING NOT SPECIALLY ADAPTED FOR A SPECIFIC VARIABLE; ARRANGEMENTS FOR MEASURING TWO OR MORE VARIABLES NOT COVERED IN A SINGLE OTHER SUBCLASS; TARIFF METERING APPARATUS; MEASURING OR TESTING NOT OTHERWISE PROVIDED FOR
    • G01D5/00—Mechanical means for transferring the output of a sensing member; Means for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for converting; Transducers not specially adapted for a specific variable
    • G01D5/26—Mechanical means for transferring the output of a sensing member; Means for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for converting; Transducers not specially adapted for a specific variable characterised by optical transfer means, i.e. using infrared, visible, or ultraviolet light
    • G01D5/32—Mechanical means for transferring the output of a sensing member; Means for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for converting; Transducers not specially adapted for a specific variable characterised by optical transfer means, i.e. using infrared, visible, or ultraviolet light with attenuation or whole or partial obturation of beams of light
    • G01D5/34—Mechanical means for transferring the output of a sensing member; Means for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for converting; Transducers not specially adapted for a specific variable characterised by optical transfer means, i.e. using infrared, visible, or ultraviolet light with attenuation or whole or partial obturation of beams of light the beams of light being detected by photocells
    • G01D5/347—Mechanical means for transferring the output of a sensing member; Means for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for converting; Transducers not specially adapted for a specific variable characterised by optical transfer means, i.e. using infrared, visible, or ultraviolet light with attenuation or whole or partial obturation of beams of light the beams of light being detected by photocells using displacement encoding scales
    • G01D5/34746—Linear encoders

Definitions

  • the present invention relates to a scale for a photoelectric encoder, an encoder, and a method of forming a scale.
  • a scale for a photoelectric encoder Several methods are known of forming a scale for a photoelectric encoder.
  • One of the methods of forming the scale is a method of etching SUS (Special Use Stainless Steel), which serves as a substrate of the scale (a scale having a structure formed with this method is referred to hereafter as an etched scale structure).
  • Fig. 6 illustrates a partial cross-sectional view of a scale 100 having the etched scale structure.
  • cross-hatching of the substrate is omitted in the cross-sectional view.
  • a required contrast for the scale is obtained by a polished surface 102 of an SUS substrate 101 serving as a reflection surface and an etched surface 103, which is a portion where the SUS has been etched, serving as a low-reflection surface.
  • Japanese Patent Laid-open Publication No. 2009-264923 includes a method of forming a scale in which a film of a material different from that of the substrate is formed on a surface of the substrate.
  • Fig. 7 illustrates a partial cross-sectional view of a scale 200 in which a light reflection layer is formed by Cr on a DLC film.
  • the scale 200 includes a light absorption layer formed by a DLC (Diamond-like Carbon) layer 202 on a surface of an SUS substrate 201, and a light reflection layer 203 formed by Cr on a DLC layer and having a reflectance higher than that of the DLC layer.
  • DLC Diamond-like Carbon
  • the etched scale structure can be formed at a low cost; however, an etching resist (photoresist) forming graduated marks on the SUS surface, i.e., used in a lithography technique, has poor adhesion to SUS and quality of the graduated marks is difficult to maintain.
  • an etching resist photoresist
  • Fig. 8 illustrates a partially expanded view of the scale having the etched scale structure.
  • so-called undercutting may occur during etching and the quality of the graduated marks varies strikingly by location.
  • the etched scale structure has been limited, such as having an accommodatable length of the scale become shorter and having low yield rates.
  • US 3 573 007 A discloses a measuring scale division which comprises a metallic carrier and a plurality of alternating light-reflecting and light-absorbing markings provided on the metallic carrier.
  • GB 2 072 850 A discloses a metal scale for an electronic measuring instrument. Light-reflecting graduations are provided by etching.
  • EP 2 112 477 A2 discloses a scale for a photoelectric encoder.
  • the scale has a base, a light -absorbing layer and light-reflecting layers.
  • WO 2007/044798 A2 discloses a reflective metrological scale which has a scale pattern of elongated side-by-side marks surrounded by reflective surface areas of a substrate.
  • the object is to improving a reflectance and a edge sharpness of reflection films of a scale. This object is solved according to the invention by the features of the independent claims. Preferred embodiments are subject of the dependent claims.
  • a scale for a photoelectric encoder includes a scale substrate and a reflection film formed at a specified (predetermined or predeterminable) pitch on the scale substrate.
  • a surface of the reflection film forms a reflection surface.
  • a low-reflection surface is formed by etching the scale substrate between reflection films. Accordingly, graduated marks of the scale can be formed more uniformly.
  • the plurality of reflection films has a thickness of 25 nm to 200 nm.
  • At least part of the plurality of reflection films is formed of pure chrome, nickel or TiSi 2 .
  • the plurality of reflection films preferably has a thickness of 25 nm to 100 nm, most preferably of 25 nm to 50 nm.
  • the scale substrate is formed of Special Use Stainless Steel or of Invar material.
  • the reflection film is adhesive with the scale substrate.
  • a method of forming a scale according to the present disclosure is a method of forming a scale having a low-reflection surface and a light reflection surface.
  • a reflection film having favorable adhesion with a scale substrate and a higher reflectance than the low-reflection surface is formed on a polished surface of a substrate; a portion of the reflection film is etched at fixed intervals and in a direction orthogonal with respect to a measurement direction of the scale to form the light reflection surface; and the reflection film is etched, then a region where a polished surface of the substrate is exposed is further etched to form the low-reflection surface. Accordingly, a scale can be formed that has more uniform graduated marks.
  • the reflection film is formed to have a thickness of 25 nm to 200 nm.
  • the reflection film is formed of pure chrome, nickel or TiSi 2 .
  • the plurality of reflection films is preferably formed to have a thickness of 25 nm to 100 nm, most preferably of 25 nm to 50 nm, and/or wherein the scale substrate is formed of Special Use Stainless Steel or Invar material.
  • the reflection film is adhered to the scale substrate.
  • the present disclosure provides a scale for a photoelectric encoder, an encoder, and a method of forming a scale, which are capable of being configured readily and at a lower cost.
  • Fig. 1 illustrates a partial cross-sectional view of a scale according to an embodiment of the present disclosure.
  • Fig. 2 is an expanded view of a portion of a scale 1.
  • the scale 1 includes a light reflection surface 12 particularly formed by a Cr film on a polished surface 11 of an SUS (Special Use Stainless Steel) substrate 10, and a low-reflection surface 13 formed by an etched SUS surface.
  • the light reflection surface 12 and the low-reflection surface 13 are arranged so as to alternate in a measurement direction of the scale, and are formed at fixed intervals along a direction orthogonal to the measurement direction of the scale.
  • Figs. 3(a) to 3(f) illustrate a method of manufacturing the scale 1.
  • a surface of the SUS substrate 10 is polished to create the polished surface 11 ( Fig. 3(a) ).
  • a reflective film (such as a Cr film) 14 is formed on the surface of the SUS substrate 10 ( Fig. 3(b) ).
  • a resist 15 is formed on a top surface of the reflective film (specifically the Cr film) 14.
  • the reflective film (specifically the Cr film) 14 is first etched ( Fig. 3(c) ) and the light reflection surface 12 is formed.
  • an etching liquid is changed and the SUS substrate 10 is etched ( Fig. 3(e) ), forming the low-reflection surface.
  • the resist 15 is removed ( Fig. 3(f) ).
  • the Cr film 14 specifically is deposited on the SUS polished surface 11 and the resist is formed on the Cr film 14.
  • Cr has favorable adhesion with the resist, and thus by using the resist to etch the Cr, undercutting of the Cr can be reduced.
  • Cr has favorable adhesion with SUS, and thus by creating a mask with a pattern of Cr, undercutting that occurs when etching SUS can be reduced. Accordingly, quality of graduated marks on the scale 1 according to the present embodiment can be improved/stabilized as compared to a case where the SUS substrate is etched by the resist, to which the SUS substrate has poor adhesion. As a result, the method can be applied to a long scale.
  • the scale specifically can be formed without forming the DLC layer. This enables manufacture at a lower cost.
  • Fig. 4 is a graph illustrating the spectral reflectance of unpolished SUS, polished SUS, and a sample in which the Cr film is formed as a specific reflective film on an SUS polished surface. As shown in Fig. 4 , in a case where the Cr film is formed on the SUS polished surface, spectral reflectance becomes flat. Therefore, variation in reflectance in a specific wavelength due to a degree of polishing can be reduced.
  • a scale can be obtained having higher reflection and/or increased performance in a wavelength region used comparatively often by a photoelectric encoder, such as in the vicinity of red 650 nm for example, as compared to a case using the SUS polished surface as the light reflection surface.
  • an encoder when configured that reads the scale using a plurality of wavelengths, such as a configuration using two wavelengths (red and infrared (e.g., 750 nm), for example), positive effects can be obtained, such as properties being readily matched.
  • the thickness of the Cr film 14 is preferably 25 nm to 200 nm. A range of 25 to 100 nm is more preferred and a range of 25 to 50 nm is particularly preferred.
  • Fig. 5 is a graph illustrating a film thickness of the Cr film 14 and reflectance of a 640 nm-wavelength beam. When the Cr film 14 is 25 nm or more and 50 nm or less, reflectance is high because light reflected by the surface of the Cr film 14 and light reflected by a surface portion on a boundary with the polished surface 11 of the SUS substrate 10 reinforce each other. In addition, when the Cr film 14 is thin, etching of the Cr film 14 can be more readily performed.
  • the present invention is not limited to the embodiment described above, and may be modified as needed without departing from the scope of the present invention.
  • a reflective film made of Ni or TiSi 2 can be used instead of the Cr film.
  • iron or Invar material may also be used for the SUS substrate. When formed with iron, a scheme may be devised in which surface processing is performed to prevent rust, or a usage environment is limited.
  • a scale for a photoelectric encoder specifically includes a scale substrate and a reflection film formed at a specified (predetermined or predeterminable) pitch on the scale substrate.
  • a surface of the reflection film forms a reflection surface.
  • a low-reflection surface is formed by etching the scale substrate between reflection films. Accordingly, a scale can be provided which is lower in cost and has favorable yield rates.

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Optical Transform (AREA)
  • Optical Elements Other Than Lenses (AREA)

Claims (11)

  1. Une échelle pour un encodeur photoélectrique, comprenant:
    un substrat d'échelle (10) ;
    une pluralité de films de réflexion (14) situés sur le substrat (10) à un pas spécifié, la pluralité de films de réflexion (14) comprenant une surface de réflexion (12) ; et
    une surface à faible réflexion (13) entre les films de réflexion (14) de la pluralité de films de réflexion et constituée par attaque chimique du substrat d'échelle (10),
    caractérisée en ce que
    la pluralité de films de réflexion (14) présente une épaisseur de 25 nm à 200 nm.
  2. L'échelle pour l'encodeur photoélectrique d'après la revendication 1, sachant qu'au moins une partie de la pluralité de films de réflexion (14) est formée de chrome pur, nickel ou TiSi2.
  3. L'échelle pour l'encodeur photoélectrique d'après une quelconque des revendications précédentes, sachant que la pluralité de films de réflexion (14) présente préférablement une épaisseur de 25 nm à 100 nm et mieux encore de 25 nm à 50 nm.
  4. L'échelle pour l'encodeur photoélectrique d'après une quelconque des revendications précédentes, sachant que le substrat d'échelle (10) est composé d'acier inoxydable à usage spécial.
  5. L'échelle pour l'encodeur photoélectrique d'après une quelconque des revendications précédentes de 1 à 3, sachant que le substrat d'échelle (10) est composé d'un matériau Invar.
  6. L'échelle pour l'encodeur photoélectrique d'après une quelconque des revendications précédentes, sachant que le film de réflexion (14) est adhésif par rapport au substrat d'échelle (10).
  7. Un encodeur comprenant;:
    une échelle d'après une quelconque des revendications précédentes de 1 à 6 ; et
    un lecteur configuré pour lire l'échelle.
  8. Un procédé de formation d'une échelle présentant une surface à faible réflexion (13) et une surface de réflexion de lumière (12), le procédé comprenant le fait de :
    former, sur une surface lissée (11) d'un substrat d'échelle (10), un film de réflexion (14) adhésif par rapport au substrat d'échelle (10) et une réflectance supérieure à celle de la surface à faible réflexion (13) ;
    attaquer chimiquement une portion du film de réflexion (14) à intervalles fixes et dans une direction orthogonale par rapport à une direction de mesurage de l'échelle pour former la surface de réflexion de lumière (12) ; et
    attaquer chimiquement le film de réflexion (14), ensuite attaquer chimiquement une zone où une surface lissée (11) du substrat d'échelle (10) est exposée pour constituer la surface à faible réflexion (13).
    caractérisé en ce que
    le film de réflexion (14) est formé pour présenter une épaisseur de 25 nm à 200 nm.
  9. Le procédé d'après la revendication 8, sachant que le film de réflexion (14) est formé de chrome pur, nickel ou TiSi2.
  10. Le procédé d'après la revendication 8 ou 9, sachant que les films de réflexion (14) sont formés de préférence pour présenter une épaisseur de 25 nm à 100 nm, mieux encore de 25 nm à 50 nm, et/ou sachant que le substrat d'échelle (10) est composé d'acier inoxydable à usage spécial ou d'un matériau Invar.
  11. Le procédé d'après une quelconque des revendications précédentes de 8 à 10, sachant que le film de réflexion (14) est collé au substrat d'échelle (10).
EP14001908.4A 2013-06-14 2014-06-02 Échelle pour encodeur photoélectrique Active EP2813821B1 (fr)

Applications Claiming Priority (1)

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JP2013125161A JP6425875B2 (ja) 2013-06-14 2013-06-14 光電式測定器用スケール、エンコーダ及びスケールの形成方法

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EP2813821A1 EP2813821A1 (fr) 2014-12-17
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EP (1) EP2813821B1 (fr)
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US10317254B2 (en) * 2014-03-27 2019-06-11 Ams Sensors Singapore Pte. Ltd. Optical encoder system
US9612136B1 (en) * 2015-09-30 2017-04-04 Mitutoyo Corporation Absolute position encoder including a redundant spatial phase signal
JP6705649B2 (ja) 2015-12-22 2020-06-03 株式会社ミツトヨ エンコーダ
JP6664211B2 (ja) 2015-12-22 2020-03-13 株式会社ミツトヨ エンコーダ
JP5971882B1 (ja) * 2016-02-22 2016-08-17 株式会社メルテック 反射型エンコーダスケール、反射型エンコーダスケールの製造方法、及びエンコーダユニット
JP6797582B2 (ja) * 2016-07-11 2020-12-09 株式会社メルテック 反射型エンコーダスケール
JP2019120500A (ja) * 2017-12-28 2019-07-22 株式会社ミツトヨ スケールおよびその製造方法

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Publication number Publication date
US20140367560A1 (en) 2014-12-18
CN104236603B (zh) 2018-04-17
US9310225B2 (en) 2016-04-12
JP2015001412A (ja) 2015-01-05
EP2813821A1 (fr) 2014-12-17
JP6425875B2 (ja) 2018-11-21
CN104236603A (zh) 2014-12-24

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