EP2720809A4 - Direct graphene growth on mgo (111) by physical vapor deposition: interfacial chemistry and band gap formation - Google Patents

Direct graphene growth on mgo (111) by physical vapor deposition: interfacial chemistry and band gap formation

Info

Publication number
EP2720809A4
EP2720809A4 EP12800366.2A EP12800366A EP2720809A4 EP 2720809 A4 EP2720809 A4 EP 2720809A4 EP 12800366 A EP12800366 A EP 12800366A EP 2720809 A4 EP2720809 A4 EP 2720809A4
Authority
EP
European Patent Office
Prior art keywords
mgo
vapor deposition
band gap
physical vapor
graphene growth
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP12800366.2A
Other languages
German (de)
French (fr)
Other versions
EP2720809A1 (en
Inventor
Jefffy Kelber
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
University of North Texas
Original Assignee
University of North Texas
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by University of North Texas filed Critical University of North Texas
Publication of EP2720809A1 publication Critical patent/EP2720809A1/en
Publication of EP2720809A4 publication Critical patent/EP2720809A4/en
Withdrawn legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/36—Carbides
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B32/00—Carbon; Compounds thereof
    • C01B32/05—Preparation or purification of carbon not covered by groups C01B32/15, C01B32/20, C01B32/25, C01B32/30
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B32/00—Carbon; Compounds thereof
    • C01B32/15—Nano-sized carbon materials
    • C01B32/182—Graphene
    • C01B32/184—Preparation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
    • H01L29/1606—Graphene
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B2204/00—Structure or properties of graphene
    • C01B2204/04—Specific amount of layers or specific thickness
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B2204/00—Structure or properties of graphene
    • C01B2204/20—Graphene characterized by its properties
    • C01B2204/22—Electronic properties

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • Organic Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • Materials Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Ceramic Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Composite Materials (AREA)
  • Metallurgy (AREA)
  • Carbon And Carbon Compounds (AREA)
EP12800366.2A 2011-06-17 2012-06-13 Direct graphene growth on mgo (111) by physical vapor deposition: interfacial chemistry and band gap formation Withdrawn EP2720809A4 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201161497971P 2011-06-17 2011-06-17
PCT/US2012/042140 WO2012174040A1 (en) 2011-06-17 2012-06-13 Direct graphene growth on mgo (111) by physical vapor deposition: interfacial chemistry and band gap formation

Publications (2)

Publication Number Publication Date
EP2720809A1 EP2720809A1 (en) 2014-04-23
EP2720809A4 true EP2720809A4 (en) 2015-01-14

Family

ID=47357435

Family Applications (1)

Application Number Title Priority Date Filing Date
EP12800366.2A Withdrawn EP2720809A4 (en) 2011-06-17 2012-06-13 Direct graphene growth on mgo (111) by physical vapor deposition: interfacial chemistry and band gap formation

Country Status (3)

Country Link
EP (1) EP2720809A4 (en)
KR (1) KR20140089311A (en)
WO (1) WO2012174040A1 (en)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8901666B1 (en) * 2013-07-30 2014-12-02 Micron Technology, Inc. Semiconducting graphene structures, methods of forming such structures and semiconductor devices including such structures
CN103482611B (en) * 2013-08-22 2016-05-11 清华大学 A kind of mesoporous grapheme foam and preparation method thereof
KR102250190B1 (en) 2014-10-31 2021-05-10 삼성전자주식회사 Graphene structure having nanobubbles and method of fabricating the same
EP3571246A1 (en) 2017-01-19 2019-11-27 Graphene Technologies, Inc. Multifunctional nanocomposites reinforced with impregnated cellular carbon nanostructures
DE102017108831A1 (en) 2017-04-25 2018-10-25 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Electrically conductive adhesive film
JP2021500306A (en) * 2017-10-24 2021-01-07 グラフェン テクノロジーズ インコーポレイテッド Lattice-modified carbon and its chemical functionalization
CN110429026B (en) * 2019-08-15 2022-05-06 西安电子科技大学 Method for opening graphene band gap
KR20210146164A (en) 2020-05-26 2021-12-03 삼성전자주식회사 Calculation method of graphene layer and measurement method of silicon carbide content using XPS
AU2021355497A1 (en) * 2020-10-02 2023-05-11 Dickinson Corporation Scalable synthesis of perimorphic materials
CN112853619B (en) * 2020-12-31 2021-09-28 广东春夏新材料科技股份有限公司 Environment-friendly air filtration non-woven fabric and production process and application thereof
CN113952927B (en) * 2021-10-18 2024-03-01 南通大学 Dual-channel 3D graphene ball prepared by CVD method and application thereof in emulsion separation

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20100247801A1 (en) * 2009-03-25 2010-09-30 Commissariat A L'energie Atomique Method of Production of Graphene

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2005019104A2 (en) * 2003-08-18 2005-03-03 President And Fellows Of Harvard College Controlled nanotube fabrication and uses
WO2008130465A2 (en) * 2007-03-02 2008-10-30 Brookhaven Science Associates Nanodevices for spintronics methods of using same
WO2009085015A1 (en) * 2008-01-03 2009-07-09 National University Of Singapore Functionalised graphene oxide
KR20100129738A (en) * 2008-03-10 2010-12-09 고쿠리츠다이가쿠호진 도호쿠다이가쿠 Graphene or graphite thin film, manufacturing method thereof, thin film structure and electronic device
US7863700B2 (en) * 2008-06-30 2011-01-04 Qimonda Ag Magnetoresistive sensor with tunnel barrier and method
KR101622304B1 (en) * 2009-08-05 2016-05-19 삼성전자주식회사 Substrate comprising graphene and process for preparing the same
US8158200B2 (en) * 2009-08-18 2012-04-17 University Of North Texas Methods of forming graphene/(multilayer) boron nitride for electronic device applications
KR20120000338A (en) * 2010-06-25 2012-01-02 삼성전자주식회사 Controlling method of graphene layers

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20100247801A1 (en) * 2009-03-25 2010-09-30 Commissariat A L'energie Atomique Method of Production of Graphene

Non-Patent Citations (3)

* Cited by examiner, † Cited by third party
Title
KONG L ET AL: "Graphene/substrate charge transfer characterized by inverse photoelectron spectroscopy", JOURNAL OF PHYSICAL CHEMISTRY C 20101216 AMERICAN CHEMICAL SOCIETY USA,, vol. 114, no. 49, 16 December 2010 (2010-12-16), pages 21618 - 21624, XP002733292, DOI: 10.1021/JP108616H *
See also references of WO2012174040A1 *
SNEHA GADDAM ET AL: "FAST TRACK COMMUNICATION; Direct graphene growth on MgO: origin of the band gap", JOURNAL OF PHYSICS: CONDENSED MATTER, INSTITUTE OF PHYSICS PUBLISHING, BRISTOL, GB, vol. 23, no. 7, 23 February 2011 (2011-02-23), pages 72204, XP020186555, ISSN: 0953-8984, DOI: 10.1088/0953-8984/23/7/072204 *

Also Published As

Publication number Publication date
KR20140089311A (en) 2014-07-14
EP2720809A1 (en) 2014-04-23
WO2012174040A1 (en) 2012-12-20

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